IR3821AMPBF_08 [INFINEON]

HIGHLY INTEGRATED 9A WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR; 高度集成的9A宽电压输入,同步降压稳压器
IR3821AMPBF_08
型号: IR3821AMPBF_08
厂家: Infineon    Infineon
描述:

HIGHLY INTEGRATED 9A WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR
高度集成的9A宽电压输入,同步降压稳压器

稳压器 输入元件
文件: 总21页 (文件大小:678K)
中文:  中文翻译
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PD-60332  
IR3821AMPbF  
TM  
SupIRBuck  
HIGHLY INTEGRATED 9A  
WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR  
Features  
Description  
Wide Input Voltage Range 2.5V to 21V  
Wide Output Voltage Range 0.6V to 12V  
Continuous 9A Load Capability  
300kHz High Frequency Operation  
Programmable Over-Current Protection  
Programmable PGood Output  
Hiccup Current Limit  
The IR3821A SupIRBuckTM is an easy-to-use,  
fully integrated and highly efficient DC/DC  
regulator. The onboard switching controller and  
MOSFETs make the IR3821A a space-efficient  
solution, providing accurate power delivery for  
low output voltage applications.  
Precision Reference Voltage (0.6V)  
Programmable Soft-Start  
The IR3821A operates from a single 4.5V to 14V  
input supply and generates an output voltage  
adjustable from 0.6V to 0.8*Vin at loads up to 9A.  
Pre-Bias Start-up  
Thermal Protection  
A versatile regulator offering programmability of  
startup time, power good threshold and current  
limit, the IR3821A’s fixed 300kHz switching  
frequency allows the use of small external  
components.  
Thermally Enhanced Package  
Small Size 5mmx6mm QFN  
Pb-Free (RoHS Compliant)  
Applications  
Distributed Point-of-Loads  
Server and Workstations  
Embedded Systems  
The IR3821A also features important protection  
functions, such as Pre-Bias startup, hiccup  
current limit and thermal shutdown to provide the  
required system level security in the event of fault  
conditions.  
Storage Systems  
DDR Applications  
Graphics Cards  
Game Consoles  
Computing Peripheral Voltage Regulators  
Fig. 1. Typical application diagram  
01/08/08  
1
PD-60332  
IR3821AMPbF  
ABSOLUTE MAXIMUM RATINGS  
(Voltages referenced to GND)  
VIN Supply Voltage  
Vcc Supply Voltage  
Vc Supply Voltage  
SW  
-0.3V to 24V  
-0.3V to 16V  
-0.3V to 30V  
-0.3V to 30V  
PGood  
-0.3V to 16V  
Fb,COMP,SS,Vsns  
OCSet  
-0.3V to 3.5V  
10mA  
AGnd to PGnd  
-0.3V to +0.3V  
-65°C To 150°C  
-40°C To 150°C  
JEDEC, JESD22-A114  
JEDEC Level 3 @ 260oC  
Storage Temperature Range  
Operating Junction Temperature Range  
ESD Classification  
Moisture Sensitivity Level  
Caution: Stresses beyond those listed under “Absolute Maximum Rating” may cause permanent damage to the  
device. These are stress ratings only and functional operation of the device at these or any other conditions beyond  
those indicated in the operational sections of the specifications is not implied. Exposure to “Absolute Maximum  
Rating” conditions for extended periods may affect device reliability.  
PACKAGE INFORMATION  
5mm x 6mm POWER QFN  
10  
11  
SW  
12  
VIN  
PGnd  
θJA = 35oC / W  
θJ-PCB = 2oC / W  
15  
AGnd  
PGood  
VCC  
HG  
VC  
9
8
13  
14  
1
4
7
2
3
5
6
Vsns FB COMP AGnd AGnd SS OCSet  
Fig. 2: Package outline (Top view)  
ORDERING INFORMATION  
PKG  
PACKAGE  
PIN  
PARTS  
PARTS  
DESIG  
COUNT  
PER TUBE  
PER REEL  
DESCRIPTION  
M
IR3821AMTRPbF  
15  
---------------  
4000  
01/08/08  
2
PD-60332  
IR3821AMPbF  
Block Diagram  
Fig. 3. Simplified block diagram of the IR3821A.  
01/08/08  
3
PD-60332  
IR3821AMPbF  
Pin Description  
Pin Name  
Description  
1
2
Vsns  
Fb  
PGood sense pin. Use two external resistors to program the power  
good threshold.  
Inverting input to the error amplifier. This pin is connected directly to the  
output of the regulator via resistor divider to set the output voltage and  
provide feedback to the error amplifier.  
3
4
5
6
Comp  
AGnd  
AGnd  
Output of error amplifier.  
Signal ground for internal reference and control circuitry.  
Signal ground for internal reference and control circuitry.  
SS/SD Soft start / shutdown. This pin provides user programmable soft-start  
function. Connect an external capacitor from this pin to signal ground  
(AGnd) to set the start up time of the output voltage. The converter can  
be shutdown by pulling this pin below 0.3V.  
7
8
OCSet Current limit set point. A resistor from this pin to SW pin will set the  
current limit threshold.  
VCC  
This pin provides biasing voltage for the internal blocks of the IC. It also  
powers the low side driver. A minimum of 0.1uF, high frequency  
capacitor must be connected from this pin to power ground (PGnd).  
9
PGood Power Good status pin. Output is open collector. Connect a pull up  
resistor from this pin to Vcc.  
10  
PGnd  
Power Ground. This pin serves as a separated ground for the MOSFET  
drivers and should be connected to the system’s power ground plane.  
11  
12  
SW  
VIN  
Switch node. This pin is connected to the output inductor  
Input voltage connection pin  
13  
14  
HG  
VC  
This pin is connected to the high side Mosfet gate. Connect a small  
capacitor from this pin to switch node (SW).  
This pin powers the high side driver and must be connected to a voltage  
higher than input voltage. A minimum of 0.1uF high frequency capacitor  
must be connected from this pin to the power ground (PGnd).  
Signal ground for internal reference and control circuitry.  
15  
AGnd  
Pins 4, 5 and 15 need to be connected together on system board.  
01/08/08  
4
PD-60332  
IR3821AMPbF  
Recommended Operating Conditions  
Symbol  
Definition  
Min  
Max  
Units  
Vin  
Vcc  
Vc  
Vo  
Io Note1  
Tj  
Input Voltage  
2.5  
4.5  
Vin + 5V  
0.6  
21  
14  
28  
12  
9
Supply Voltage  
Supply Voltage  
Output Voltage  
Output Current  
V
0
-40  
A
Junction Temperature  
125  
oC  
Electrical Specifications  
Unless otherwise specified, these specification apply over Vin=Vcc=Vc=12V, 0oC<Tj(Ic)<105oC.  
Typical values are specified at Ta = 25oC.  
Parameter  
Power Loss  
Symbol  
Test Condition  
Min  
TYP  
MAX  
Units  
Power Loss  
Ploss  
Vcc=Vin=12V, Vc=24V, Vo=1.8V,  
2.3  
W
Io=9A, L=1.2uH, Note3  
MOSFET Rds(on)  
Top Switch  
Rds(on)_Top  
Rds(on)_Bot  
ID=11A, Tj(MOSFET)=25oC  
ID=11A, Tj(MOSFET)=25oC  
10.5  
10.5  
13.4  
13.4  
mΩ  
Bottom Switch  
Reference Voltage  
Feedback Voltage  
VFB  
0.6  
V
%
%
Accuracy  
0oC<Tj<105oC  
-1.35  
-1.5  
+1.35  
+1.5  
-40oC<Tj<105oC, Note2  
Supply Current  
VCC Supply Current (Static)  
ICC(Static)  
IC(Static)  
ICC(Dynamic)  
IC(Dynamic)  
SS=0V, No Switching  
SS=0V, No Switching  
10  
4.5  
13  
13  
13  
7
VC Supply Current  
(Static)  
VCC Supply Current  
(Dynamic)  
VC Supply Current  
(Dynamic)  
mA  
SS=3V, Vc=24V, Vcc=Vin=12V.  
Vo=1.8V, Io=0A  
SS=3V, Vc=24V, Vcc=Vin=12V.  
Vo=1.8V, Io=0A  
20  
20  
Under Voltage Lockout  
VCC-Start-Threshold  
VCC_UVLO(R)  
VCC_UVLO(F)  
Supply ramping up  
4.0  
3.7  
4.4  
4.1  
VCC-Stop-Threshold  
VCC-Hysteresis  
Supply ramping down  
Supply ramping up and down  
Supply ramping up  
0.15  
3.1  
0.25  
0.2  
0.3  
V
VC-Start-Threshold  
VC-Stop-Threshold  
VC-Hysteresis  
VC_UVLO(R)  
VC_UVLO(F)  
3.5  
Supply ramping down  
Supply ramping up and down  
2.85  
0.15  
3.25  
0.25  
01/08/08  
5
PD-60332  
IR3821AMPbF  
Parameter  
SYM  
Test Condition  
Min  
TYP  
MAX  
Units  
Oscillator  
Frequency  
FS  
270  
300  
1.25  
80  
330  
kHz  
V
Note3  
Note3  
Fb=0V  
Ramp Amplitude  
Min Pulse Width  
Max Duty Cycle  
Vramp  
Dmin(ctrl)  
Dmax  
ns  
%
80  
Error Amplifier  
Input Bias Current  
IFB1  
IFB2  
SS=3V  
SS=0V  
-0.1  
35  
-0.5  
50  
Input Bias Current  
Source/Sink Current  
Transconductance  
20  
μA  
I(source/Sink)  
gm  
50  
70  
90  
1000  
1300  
1600  
μmho  
Soft Start/SD  
Soft Start Current  
ISS  
SS=0V  
15  
20  
28  
μA  
Shutdown Output  
Threshold  
SD  
0.25  
V
Power Good  
Vsns Low Trip Point  
Vsns(trip)  
PGood(Hys)  
PG(voltage)  
Isns  
Vsns Ramping Down  
IPGood=4mA  
0.35  
15  
0.38  
27.5  
0.25  
0.3  
0.41  
40  
V
mV  
V
Hysteresis  
PGood Output Low  
Voltage  
0.5  
1
Input Bias Current  
0
μA  
Over Current Protection  
OCSET Current  
Hiccup Current  
IOCSET  
IHiccup  
15  
20  
3
26  
μA  
Note3  
Hiccup Duty Cycle  
Hiccup(duty)  
15  
%
I
Hiccup / ISS , Note3  
Thermal Shutdown  
Thermal Shutdown  
Threshold  
140  
20  
Note3  
Note3  
oC  
Thermal Shutdown  
Hysteresis  
Note1: Continuous output current determined by input and output voltage setting and thermal environment.  
Note2: Cold temperature performance is guaranteed via correlation using statistical quality control. Not tested in production.  
Note3: Guaranteed by Design but not tested in production.  
01/08/08  
6
PD-60332  
IR3821AMPbF  
TYPICAL OPERATING CHARACTERISTICS (-40oC - 125oC)  
Ic(static)  
Icc(static)  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
13.0  
12.0  
11.0  
10.0  
9.0  
8.0  
7.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp[oC]  
Icc(dynamic)  
Ic(dynamic)  
21.0  
19.0  
17.0  
15.0  
13.0  
11.0  
21.0  
19.0  
17.0  
15.0  
13.0  
11.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp[oC]  
ISS  
Vfb  
27.0  
25.0  
23.0  
21.0  
19.0  
17.0  
15.0  
605.0  
600.0  
595.0  
590.0  
585.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp[oC]  
Transconductance  
IOCSET  
1.60  
1.55  
1.50  
1.45  
1.40  
1.35  
1.30  
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
26.0  
25.0  
24.0  
23.0  
22.0  
21.0  
20.0  
19.0  
18.0  
17.0  
16.0  
15.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp[oC]  
01/08/08  
7
PD-60332  
IR3821AMPbF  
Circuit Description  
THEORY OF OPERATION  
The IR3821A is  
a
voltage mode PWM  
Pre-Bias Startup  
synchronous regulator and operates with a fixed  
300kHz switching frequency, allowing the use of  
small external components.  
The IR3821A is able to start up into pre-charged  
output, which prevents oscillation and  
disturbances of the output voltage.  
The output voltage is set by feedback pin (Fb)  
and the internal reference voltage (0.6V). These  
are two inputs to error amplifier. The error signal  
between these two inputs is amplified and it is  
compared to a fixed frequency linear sawtooth  
ramp.  
The output starts in asynchronous fashion and  
keeps the synchronous MOSFET off until the first  
gate signal for control MOSFET is generated.  
Figure 4 shows a typical Pre-Bias condition at  
start up.  
Depending on system configuration, a specific  
amount of output capacitors may be required to  
prevent discharging the output voltage.  
A trailing edge modulation is used for generating  
fixed frequency pulses (PWM) which drives the  
internal N-channel MOSFETs.  
The internal oscillator circuit uses on-chip  
circuitry, eliminating the need for external  
components.  
Vo  
V
The IR3821A operates with single input voltage  
from 4.5V to 14V allowing an extended operating  
input voltage range.  
Pre-Bias Voltage  
The over-current protection is performed by  
sensing current through the RDS(on) of low side  
MOSFET. This method enhances the converter’s  
efficiency and reduces cost by eliminating a  
current sense resistor. The current limit is  
programmable by using an external resistor.  
Time  
Fig. 4: Pre-Bias start up  
Under-Voltage Lockout  
The under-voltage lockout circuit monitors the  
two input supplies (Vcc and Vc) and assures that  
the MOSFET driver outputs remain in the off  
state whenever the supply voltage drops below  
set thresholds. Lockout occurs if Vcc or Vc fall  
below 4.3V and 3.3V respectively. Normal  
operation resumes once Vcc and Vc rise above  
the set values.  
Shutdown  
The output can be shutdown by pulling the soft-  
start pin below 0.3V. This can easily be done by  
using an external small signal transistor. During  
shutdown both MOSFET drivers will be turned  
off. Normal operation will resume by cycling soft  
start pin.  
Power Good  
Thermal Shutdown  
The IR3821A provides an open collector power  
good signal which reports the status of the  
output. The output is sensed through the  
dedicated Vsns pin. The power good threshold  
can be externally programmed using two external  
resistors. The power good comparator is  
internally set to 0.38V (typical).  
Temperature sensing is provided inside the  
IR3821A. The trip threshold is typically set to  
140oC. When trip threshold is exceeded, thermal  
shutdown turns off both MOSFETs. Thermal  
shutdown is not latched and automatic restart is  
initiated when the sensed temperature drops  
within the operating range. There is a 20oC  
hysteresis in the thermal shutdown threshold.  
01/08/08  
8
PD-60332  
IR3821AMPbF  
Soft-Start  
The IR3821A has programmable soft-start to  
control the output voltage rise and limit the inrush  
current during start-up.  
3V  
20uA  
SS/SD  
Comp  
To ensure correct start-up, the soft-start  
sequence initiates when Vcc and Vc rise above  
their threshold and generate the Power On  
Ready (POR) signal. The soft-start function  
operates by sourcing current to charge an  
external capacitor to about 3V.  
40uA  
POR  
Error Amp  
24K  
0.6V  
Initially, the soft-start function clamps the output  
of error amplifier by injecting a current (40uA)  
into the Fb pin and generates a voltage about  
0.96V (40ux24K) across the negative input of  
error amplifier (see figure 5).  
24K  
Fb  
The magnitude of the injected current is inversely  
proportional to the voltage at the soft-start pin. As  
the soft-start voltage ramps up, the injected  
current decreases linearly and so does the  
voltage at negative input of error amplifier.  
Fig. 5: Soft-Start circuit for IR3821A  
When the soft-start capacitor is around 1V, the  
voltage at the positive input of the error amplifier  
is approximately 0.6V.  
Output of UVLO  
POR  
3V  
The output of error amplifier will start increasing  
and generating the first PWM signal. As the soft-  
start capacitor voltage continues to rise up, the  
current flowing into the Fb pin will keep  
decreasing.  
2V  
1V  
Soft-Start  
Voltage  
0V  
The feedback voltage increases linearly as the  
soft start voltage ramps up. When soft-start  
voltage is around 2V, the output voltage reaches  
the steady state and the injected current is zero.  
40uA  
Current flowing  
into Fb pin  
0uA  
0.96V  
Voltage at negative input ≅  
of Error Amp  
Figure  
6
shows the theoretical operating  
waveforms during soft-start.  
0.6V  
0.6V  
The output voltage start-up time is the time  
period when soft-start capacitor voltage  
increases from 1V to 2V.  
0V  
Voltage at Fb pin  
The start-up time will be dependent on the size of  
the external soft-start capacitor and can be  
estimated by:  
Fig. 6: Theoretical operation waveforms  
during soft-start  
T
start  
20μA∗  
= 2V 1V  
Css  
For a given start-up time, the soft-start capacitor  
can be estimated as:  
CSS 20μA*T (ms)  
--(1)  
start  
01/08/08  
9
PD-60332  
IR3821AMPbF  
Over-Current Protection  
The over-current protection is performed by  
sensing current through the RDS(on) of the low  
side MOSFET. This method enhances the  
converter’s efficiency and reduces cost by  
eliminating a current sense resistor. As shown in  
figure 7, an external resistor (RSET) is connected  
between OCSet pin and the inductor point which  
sets the current limit set point.  
The internal current source develops a voltage  
across RSET. When the low side MOSFET is  
turned on, the inductor current flows through the  
Q2 and results a voltage which is given by:  
Fig. 8: 3uA current source for discharging  
soft-start capacitor during hiccup  
The OCP circuit starts sampling current when the  
low gate drive is about 3V. The OCSet pin is  
internally clamped about 1.5V during on time of  
high side gate to prevent false trigging, figure 9  
shows the OCSet pin during one switching cycle.  
As shown, there is about 150ns delay to mask  
the dead time. Since this node contains switching  
noises, this delay also functions as a filter.  
VOCSet = (IOCSet ROCSet ) (RDS(on) IL )  
--( 2)  
Deadtime  
Blanking time  
IOCSet*ROCSet  
Clamp voltage  
Fig. 7: Connection of over current sensing resistor  
The critical inductor current can be calculated by  
setting:  
V
OCSet = (IOCSet ROCSet)(RDS(on) IL ) = 0  
Fig. 9: OCset pin during normal condition  
Ch1: Inductor point, Ch3:OCSet  
ROCSet IOCSet  
ISET = IL(critical )  
=
--( 3 )  
RDS (on )  
The value of RSET should be checked in an actual  
circuit to ensure that the over-current protection  
circuit activates as expected. The IR3821A  
current limit is designed primarily as disaster  
preventing, and doesn't operate as a precision  
current regulator.  
An over-current is detected if the OCSet pin goes  
below ground. This trips the OCP comparator  
and cycles the soft start function in hiccup mode.  
The hiccup is performed by charging and  
discharging the soft-start capacitor in a certain  
slope rate. As shown in figure 8 a 3uA current  
source is used to discharge the soft-start  
capacitor.  
The OCP comparator resets after every soft start  
cycle. The converter stays in this mode until the  
overload or short circuit is removed. The  
converter will automatically recover.  
01/08/08  
10  
PD-60332  
IR3821AMPbF  
Soft-Start Programming  
Application Information  
Design Example:  
The following example is a typical application for  
the IR3821A. The application circuit is shown in  
page 17.  
The soft-start timing can be programmed by  
selecting the soft-start capacitance value. The  
start-up time of the converter can be calculated  
by using:  
CSS 20μA*T  
--(1)  
start  
Where Tstart is the desired start-up time (ms)  
For a start-up time of 11ms, the soft-start  
capacitor will be 0.22uF.  
Vin =12V,(13.2V,max )  
Vo =1.8V  
Io = 9A  
Vc supply for single input voltage  
ΔVo 30mV  
Fs = 300 kHz  
To drive the high-side switch, it is necessary to  
supply a gate voltage at least 4V greater than the  
bus voltage. This is achieved by using a charge  
pump configuration as shown in figure 11. This  
method is simple and inexpensive. The operation  
of the circuit is as follows: when the lower  
MOSFET is turned on, the capacitor (C1) is  
pulled down to ground and charges, up to VBUS  
value, through the diode (D1). The bus voltage  
will be added to this voltage when upper  
MOSFET turns on in next cycle, and providing  
supply voltage (Vc) through diode (D2). Vc is  
approximately:  
Output Voltage Programming  
Output voltage is programmed by reference  
voltage and external voltage divider. The Fb pin  
is the inverting input of the error amplifier, which  
is internally referenced to 0.6V. The divider is  
ratioed to provide 0.6V at the Fb pin when the  
output is at its desired value. The output voltage  
is defined by using the following equation:  
R8  
R9  
V 2V  
(
VD1 +VD2  
)
--(6)  
Vo =Vref 1 +  
--(4)  
C
bus  
Capacitors in the range of 0.1uF are generally  
adequate for most applications. The diodes must  
be a fast recovery device to minimize the amount  
of charge fed back from the charge pump  
capacitor into VBUS. The diodes need to be able  
to block the full power rail voltage, which is seen  
when the high side MOSFET is switched on. For  
low voltage application, schottky diodes can be  
used to minimize forward drop across the diodes  
at start up.  
When an external resistor divider is connected to  
the output as shown in figure 10.  
VOUT  
IR3821A  
Fb  
R8  
R9  
Fig. 10: Typical application of the IR3821A for  
programming the output voltage  
Equation (4) can be rewritten as:  
Vref  
R9 = R8 ∗  
--(5)  
VOVref  
For the calculated values of R8 and R9 see  
feedback compensation section.  
Fig. 11: Charge pump circuit to generate  
Vc voltage  
01/08/08  
11  
PD-60332  
IR3821AMPbF  
Input Capacitor Selection  
IfΔi 47%(Io ,)then the output inductor will be:  
L = 1.2uH  
The input filter capacitor should be selected  
based on how much ripple the supply can  
tolerate on the DC input line. The ripple current  
generated during the on time of upper MOSFET  
should be provided by the input capacitor. The  
RMS value of this ripple is expressed by:  
Delta MPL-104 series provides a range of  
inductors in different values, low profile suitable  
for large currents.  
Output Capacitor Selection  
IRMS = Io D(1D) --(7)  
The voltage ripple and transient requirements  
determine the output capacitors’ type and values.  
The criteria is normally based on the value of the  
Effective Series Resistance (ESR). However the  
actual capacitance value and the Equivalent  
Series Inductance (ESL) are other contributing  
components. These components can be  
described as:  
Vo  
D =  
Where:  
V
in  
D is the Duty Cycle  
IRMS is the RMS value of the input capacitor  
current.  
Io is the output current.  
For Io=9A and D=0.15, the IRMS=3.21A.  
ΔV = ΔVo(ESR) + ΔVo(ESL) + ΔV  
o
o(C)  
Ceramic capacitors are recommended due to  
their peak current capabilities. They also feature  
low ESR and ESL at higher frequency which  
results in better efficiency.  
ΔV  
= ΔIL *ESR - -(9)  
o(ESR)  
Use 3x10uF, 16V ceramic capacitors from  
Panasonic.  
V
in  
ΔV  
=
*ESL  
o(ESL)  
L
Inductor Selection  
ΔIL  
8 *Co *F  
ΔV  
=
o(C)  
The inductor is selected based on output power,  
operating frequency and efficiency requirements.  
A low inductor value causes a large ripple  
current, resulting in the smaller size, faster  
response to a load transient but poor efficiency  
and high output noise. Generally, the selection of  
the inductor value can be reduced to the desired  
s
ΔV =Output voltage ripple  
o
ΔIL = Inductor ripple current  
Since the output capacitor has a major role in the  
overall performance of the converter and  
determine the result of transient response,  
selection of the capacitor is critical. The IR3821A  
can perform well with all types of capacitors.  
(Δi)  
maximum ripple current in the inductor  
. The  
optimum point is usually found between 20% and  
50% ripple of the output current.  
For the buck converter, the inductor value for the  
desired operating ripple current can be  
determined using the following:  
As a rule the capacitor must have low enough  
ESR to meet output ripple and load transient  
requirements, yet have high enough ESR to  
satisfy stability requirements.  
Δi  
Δt  
1
V V = L; Δt = D∗  
in  
o
F
s
The goal for this design is to meet the voltage  
ripple requirement in the smallest possible  
capacitor size. Therefore, a ceramic capacitor is  
selected due to its low ESR and small size. Six of  
the Panasonic ECJ2FB0J226M (22uF, 6.3V, X5R  
and EIA 0805 case size) are a good choice.  
V
o
L =  
(
V V  
)
--(8)  
in  
o
V Δi *F  
in  
s
Where:  
V = Maximum input voltage  
in  
Vo = Output Voltage  
Δi = Inductor ripple current  
Fs= Switching frequency  
Δt = Turn on time  
In the case of tantalum or low ESR electrolytic  
capacitors, the ESR dominates the output  
voltage ripple, equation (9) can be used to  
calculate the required ESR for the specific  
voltage ripple.  
D = Duty cycle  
01/08/08  
12  
PD-60332  
IR3821AMPbF  
Feedback Compensation  
The ESR zero of the output capacitor expressed  
as follows:  
The IR3821A is a voltage mode controller; the  
control loop is a single voltage feedback path  
including error amplifier and error comparator. To  
achieve fast transient response and accurate  
output regulation, a compensation circuit is  
necessary. The goal of the compensation  
network is to provide a closed loop transfer  
function with the highest 0dB crossing frequency  
and adequate phase margin (greater than 45o).  
1
F
=
- - -(12)  
ESR  
2π *ESR*Co  
VOUT  
R8  
Fb  
Comp  
Ve  
E/A  
R9  
C
4
CPOLE  
VREF  
R3  
The output LC filter introduces a double pole, –  
40dB/decade gain slope above its corner  
resonant frequency, and a total phase lag of 180o  
(see figure 13). The resonant frequency of the LC  
filter expressed as follows:  
Gain(dB)  
H(s) dB  
1
Frequency  
F =  
- - -(11)  
FZ  
LC  
2 π L Co  
o
Fig. 14: TypeII compensation network  
and its asymptotic gain plot  
Figure 13 shows gain and phase of the LC filter.  
Since we already have 180o phase shift from the  
output filter alone, the system risks being  
unstable.  
The transfer function (Ve/Vo) is given by:  
Gain  
Phase  
R9  
1+sRC4  
3
H(s)= gm *  
*
- - -(13)  
R9 +R8  
sC  
4
0  
0dB  
-40dB/decade  
The (s) indicates that the transfer function varies  
as a function of frequency. This configuration  
introduces a gain and zero, expressed by:  
-180  
Frequency  
FLC  
F
LC Frequency  
R9  
[
H
(
s
)
]
= gm *  
* R3 - - -(14)  
R9 +R8  
Fig. 13: Gain and Phase of LC filter  
1
F =  
- - -(15)  
z
2π *R3 *C4  
The IR3821A’s error amplifier is a differential-  
input transconductance amplifier. The output is  
available for DC gain control or AC phase  
compensation.  
The gain is determined by the voltage divider and  
error amplifier’s transconductance gain.  
First select the desired zero-crossover frequency  
(Fo):  
The error amplifier can be compensated either in  
type II or typeIII compensation. When it is used in  
type II compensation the transconductance  
properties of the error amplifier become evident  
and can be used to cancel one of the output filter  
poles. This will be accomplished with a series RC  
circuit from Comp pin to ground as shown in  
figure 14.  
F > FESR andF ≤  
(
1/5~1/10 *F  
)
o
o
s
Use the following equation to calculate R4:  
V * F * FESR * (R8 +R9 )  
osc  
o
R3 =  
- - -(16)  
V * F2 * R9 * gm  
in  
LC  
Where:  
Vin = Maximum Input Voltage  
osc = Oscillator Ramp Voltage  
Fo = Crossover Frequency  
ESR = Zero Frequency of the Output Capacitor  
LC = Resonant Frequency of the Output Filter  
V
This method requires that the output capacitor  
should have enough ESR to satisfy stability  
requirements. In general the output capacitor’s  
ESR generates a zero typically at 5kHz to 50kHz  
which is essential for an acceptable phase  
margin.  
F
F
R8 and R9 = Feedback Resistor Dividers  
gm = Error Amplifier Transconductance  
01/08/08  
13  
PD-60332  
IR3821AMPbF  
To cancel one of the LC filter poles, place the  
zero before the LC filter resonant frequency pole:  
VOUT  
ZIN  
C3  
F =75%F  
z
LC  
C
7
R3  
C4  
1
F = 0.75*  
- - -(17)  
R10  
R8  
z
Zf  
2π L *Co  
o
Use equations (15) and (16) to calculate C4.  
One more capacitor is sometimes added in  
parallel with C4 and R3. This introduces one  
more pole which is mainly used to suppress the  
switching noise.  
Fb  
Ve  
E/A  
R9  
Comp  
VREF  
Gain(dB)  
The additional pole is given by:  
H(s) dB  
1
F =  
P
C4 *CPOLE  
2π *R3 *  
C4 +CPOLE  
Frequency  
F
Z
1
F
Z
2
F
P
2
FP3  
The pole sets to one half of switching frequency  
which results in the capacitor CPOLE  
:
Fig.15: Compensation network with local  
feedback and its asymptotic gain plot  
1
1
CPOLE  
=
1
π * R3 * F  
s
π * R3 * F −  
s
As known, a transconductance amplifier has high  
impedance (current source) output, therefore,  
consideration should be taken when loading the  
error amplifier output. It may exceed its  
source/sink output current capability, so that the  
amplifier will not be able to swing its output  
voltage over the necessary range.  
C4  
F
s
For FP <<  
2
For a general solution for unconditional stability  
for any type of output capacitors, in a wide range  
of ESR values we should implement local  
feedback with a compensation network (type III).  
The typically used compensation network for  
voltage-mode controller is shown in figure 15.  
The compensation network has three poles and  
two zeros and they are expressed as follows:  
In such a configuration, the transfer function is  
FP1 = 0  
given by:  
1
Ve 1 gmZf  
Vo 1 + gmZIN  
FP2  
FP3  
=
=
=
2π * R10 *C7  
1
1
2π * R3 *C3  
C4 *C3  
C4 + C3  
The error amplifier gain is independent of the  
transconductance under the following condition:  
2π * R3  
1
Fz1 =  
gm * Zf >>1 and gm * Zin >>1 - - - (18)  
2π * R3 *C4  
1
1
By replacing Zin and Zf according to figure 15, the  
transformer function can be expressed as:  
Fz2  
=
2π *C7 * (R8 + R10 ) 2π *C7 * R8  
1
(1 + sR3C4 ) *  
[
1 + sC7  
(
R8 + R10  
)
]
Cross over frequency is expressed as:  
H(s) =  
*
sR8 (C4 + C3 )  
C4 *C3  
C4 + C3  
1 + sR  
* (1 + sR C )  
3
10  
7
V
1
in  
F = R3 *C *  
*
o
7
V
2π *L *Co  
osc  
o
01/08/08  
14  
PD-60332  
IR3821AMPbF  
The DC gain will be large enough to provide high  
DC-regulation accuracy (typically -5dB to -12dB).  
The phase margin should be greater than 45o for  
overall stability.  
Based on the frequency of the zero generated by  
output capacitor and its ESR versus crossover  
frequency, the compensation type can be  
different. The table below shows the  
compensation types and location of crossover  
frequency.  
Θmax =70o  
Desired Phase Boost:  
Compensator  
type  
Output  
capacitor  
FESR vs. Fo  
1-SinΘ  
1+SinΘ  
=10.58kHz  
F
= F *  
Z2  
o
Type II(PI)  
Electrolytic  
, Tantalum  
FLC<FESR<Fo<Fs/2  
FLC<Fo<FESR<Fs/2  
F
Z2  
Type III(PID)  
Tantalum,  
ceramic  
Method A  
1+SinΘ  
1-SinΘ  
= 340.28kHz  
F
= F *  
P2  
o
Type III(PID)  
Ceramic  
FLC<Fo<Fs/2<FESR  
F
Method B  
P2  
Table1- The compensation type and location  
of FESR versus Fo  
Select: F = 0.5* F and FP3 = 0.5* F  
Z1  
Z2  
s
Select:C =180pF  
7
The details of these compensation types are  
discussed in application note AN-1043 which can  
be downloaded from IR’s website at www.irf.com.  
2π * F * Lo *Co *V  
2
o
R3 =  
OSC , R3=18.85K, checkR3 ≥  
C *V  
gm  
7
in  
For this design we have:  
Select:R3 =18.70KΩ  
CalculateC4 andC3 :  
1
Vin=12V  
Vo=1.8V  
Vosc=1.25V  
Vref=0.6V  
gm=1000umoh  
Lo=1.2uH  
Co=6x22uF, ESR=0.5mOhm  
Fs=300kHz  
C4 =  
;C4 =1.61nF, Select: C4 =1.8nF  
2π * F * R  
Z1  
3
1
C3 =  
;C3 = 56.7pF, Select:C3 = 47pF  
These result to:  
2π * F * R3  
P3  
FLC=17.12kHz  
F
F
ESR=4.4MHz  
s/2=300kHz  
CalculateR ,R8 andR9 :  
10  
Select crossover frequency:  
1
1
R =  
;R = 2.60KΩ, checkR ≥  
10  
10  
10  
2π *C * F  
gm  
7
P2  
F < FESR andF ≤  
(
1/5~1/10 *F  
)
o
o
s
Select:R = 2.61KΩ  
Fo=60kHz  
10  
Since: FLC<Fo<Fs/2<FESR, typeIII method B is  
selected to place the poles and zeros.  
1
R8 =  
R9 =  
R ;R8 = 80.97KΩ, Select: R8 = 80.6KΩ  
10  
2π *C * F  
7
Z2  
The following design rules will give a crossover  
frequency approximately one-tenth of the  
switching frequency. The higher the band width,  
the potentially faster the load transient response.  
V
ref  
* R8 ;R9 = 40.30KΩ, Select:R9 = 40.2KΩ  
V
V
ref  
o
01/08/08  
15  
PD-60332  
IR3821AMPbF  
Layout Consideration  
Programming the Current-Limit  
The layout is very important when designing high  
frequency switching converters. Layout will affect  
noise pickup and can cause a good design to  
perform with less than expected results.  
The Current-Limit threshold can be set by  
connecting a resistor (RSET) from drain of the  
low-side MOSFET to the OCSet pin. The  
resistor can be calculated by using equation (3).  
Start to place the power components, making all  
the connection in the top layer with wide, copper  
filled areas.  
The RDS(on) has  
a
positive temperature  
coefficient and it should be considered for the  
worse case operation. This resistor must be  
placed close to the IC, place a small ceramic  
capacitor from this pin to power ground (PGnd)  
for noise rejection purposes.  
The inductor, output capacitor and the IR3821A  
should be as close to each other as possible.  
This helps to reduce the EMI radiated by the  
power traces due to the high switching currents  
through them. Place the input capacitor directly to  
the Vin pin of IR3821A. To reduce the ESR  
replace the single input capacitor with two  
parallel units.  
The feedback part of the system should be kept  
away from the inductor and other noise sources.  
The critical bypass components such as  
capacitors for Vcc and Vc should be close to their  
respective pins. It is important to place the  
feedback components including feedback  
resistors and compensation components close to  
Fb and Comp pins.  
ROCSet IOCSet  
ISET =IL(critica)l  
=
- -(3)  
RDS(on)  
RDS(on) =10.5mυ =10.5m1.5 =15.75mΩ  
where:  
υ :Temperature Dependency  
Note :Use14.5 mfor low - side MOSFET  
if 5V is used for V  
cc  
Δi  
ISET = (Io 1.5) +  
2
where:  
Io : MaxOutputCurrent  
In a multilayer PCB use one layer as a power  
ground plane and have a control circuit ground  
(analog ground), to which all signals are  
referenced. The goal is to localize the high  
current path to a separate loop that does not  
interfere with the more sensitive analog control  
function. These two grounds must be connected  
together on the PC board layout at a single point.  
The Power QFN is a thermally enhanced  
package. Based on thermal performance it is  
recommended to use at least a 4-layers PCB. To  
effectively remove heat from the device the  
exposed pad should be connected to the ground  
plane using vias.  
Δi : Inductor ripplecurrent  
V
o
Δi = (V -Vo )∗  
in  
V LF  
in  
s
ISET = (9A1.5)+ 2.1A=15.6A  
ROCSet = R7 =12.4KΩ  
Setting the Power Good Threshold  
Power Good threshold can be programmed by  
using two external resistors (see figure 16).  
The following formula can be used to set the  
threshold:  
0.38V  
R2 =  
*R  
--(19)  
1
0.9*V -0.38V  
out  
Where:  
0.38V is reference of the internal comparator  
0.9*Vout is selectable threshold for power good,  
for this design it is 1.62V.  
Select R1=10KOhm  
Using (18): R2=3.06KOhm  
Select R2=3.09K  
Use a pull up resistor (4.99K) from PGood pin to  
Vcc.  
01/08/08  
16  
PD-60332  
IR3821AMPbF  
Typical Application for IR3821A  
12V to 1.8V @ 9A  
Fig.16: Typical Application circuit for 12V to 1.8V at 9A using ceramic output capacitors  
01/08/08  
17  
PD-60332  
IR3821AMPbF  
PCB Metal and Components Placement  
The lead lands (the 11 IC pins) width should be equal to the nominal part lead width. The  
minimum lead to lead spacing should be 0.2mm to minimize shorting.  
Lead land length should be equal to the maximum part lead length + 0.3 mm outboard  
extension. The outboard extension ensures a large and inspectable toe fillet.  
The pad lands (the 4 big pads other than the 11 IC pins) length and width should be equal  
to maximum part pad length and width. However, the minimum metal-to-metal spacing  
should be no less than 0.17mm for 2 oz. Copper; no less than 0.1mm for 1 oz. Copper  
and no less than 0.23mm for 3 oz. Copper.  
01/08/08  
18  
PD-60332  
IR3821AMPbF  
Solder Resist  
It is recommended that the lead lands are Non Solder Mask Defined (NSMD). The solder  
resist should be pulled away from the metal lead lands by a minimum of 0.025mm to ensure  
NSMD pads.  
The land pad should be Solder Mask Defined (SMD), with a minimum overlap of the solder  
resist onto the copper of 0.05mm to accommodate solder resist mis-alignment.  
Ensure that the solder resist in between the lead lands and the pad land is 0.15mm due to  
the high aspect ratio of the solder resist strip separating the lead lands from the pad land.  
01/08/08  
19  
PD-60332  
IR3821AMPbF  
Stencil Design  
The Stencil apertures for the lead lands should be approximately 80% of the area of  
the lead lads. Reducing the amount of solder deposited will minimize the  
occurrences of lead shorts. If too much solder is deposited on the center pad the part  
will float and the lead lands will be open.  
The maximum length and width of the land pad stencil aperture should be equal to  
the solder resist opening minus an annular 0.2mm pull back to decrease the  
incidence of shorting the center land to the lead lands when the part is pushed into  
the solder paste.  
01/08/08  
20  
PD-60332  
IR3821AMPbF  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
This product has been designed and qualified for the Consumer market.  
Visit us at www.irf.com for sales contact information  
Data and specifications subject to change without notice. 10/07  
01/08/08  
21  

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