IR280DG08H [INFINEON]
Rectifier Diode,;
| 型号： | IR280DG08H |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0135J 05/99
IR280DG..HCB SERIES
HIGH POWER RECTIFIER DIODES
Junction Size:
Wafer Size:
Square 280 mils
4"
VRRM Class:
600 and 1200 V
PassivationProcess:
Glassivated MESA
Reference IR Packaged Part: 70HF Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
990mV
TJ=25°C IF = 2 5 A
VRRM ReverseBreakdownVoltageRange
600 and1200V TJ=25°C IR =100µA
(1)
(1) Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr-Ni - Ag(1KA-4KA-6KA)
NominalFrontMetalComposition,Thickness
ChipDimensions
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
280x280mils(seedrawing)
100 mm, with std. < 110 > flat
300µm
WaferDiameter
WaferThickness
MaximumWidthofSawingLine
130µm
Reject Ink Dot Size
0.25mmdiameterminimum
Seedrawing
InkDot Location
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
1
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IR280DG..HCB Series
Bulletin I0135J 05/99
Ordering Information Table
Device Code
IR 280
D
G
12
H
CB
3
1
2
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
InternationalRectifierDevice
Chip Dimension in Mils
Type of Device: D = Standard Recovery Diode
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
AvailableClass
06 = 600V
12 = 1200V
Metallization: H = Silver (Anode) - Silver (Cathode)
Probed Uncut Die
Outline Table
All dimensions are in millimeters
2
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IR280DG..HCB Series
Bulletin I0135J 05/99
Wafer Layout
TOP VIEW
N° 118 Basic Cells
All dimensions are in millimeters
3
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