IR01D214 [INFINEON]
HIGH VOLTAGE HALF BRIDGE; 高压半桥
| 型号： | IR01D214 |
| 厂家： | 
Infineon |
| 描述： | HIGH VOLTAGE HALF BRIDGE |
| 文件： | 总7页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Product Summary
Features
• Output Power MOSFETs in half-bridge configuration
• 500V rated breakdown voltage
• High side gate drive designed for bootstrap
operation
• Matched propagation delay for both channels
• Undervoltage lockout
250V- 214/224
500V - 420
V
(max)
IN
t
130 & 90 ns
260 ns
on/off
t
rr
• 5V Schmitt-triggered input logic
• Half-Bridge output in phase with HIN
R
2.0Ω - H214
1.1Ω - H224
3.0Ω - H420
DS(on)
• Heatsink version (P2) with improved P
D
Description
The IR01H(D)xxx is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET power
o
P (T = 25 C)
2.0W
4.0W - P2
D
A
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
half bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
Packages
Typical Connection
HV DC Bus
VIN
NOTE: D1 is not required for
the HD type
D1
Vcc
1
6
9
7
Vcc
HIN
LIN
VB
HIN
L IN
2
3
V
IN
VO
TO
LOAD
COM
4
COM
1
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance
and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
- 0.3
-0.3
—
Max.
250
Units
V
IN
High Voltage Supply
214/224
420
500
V
B
High Side Floating Supply Absolute Voltage
214/224
420
275
V
525
VO
/V
Half-Bridge Output
V
V
+ 0.3
IN
V
Logic Input Voltage (HIN & LIN)
Low Side and Logic Fixed Supply Voltage
Peak Diode Recovery dv/dt
+ 0.3
25
IH IL
cc
V
CC
dV/dt
3.50
2
V/ns
P
D
Package Power Dissipation @ T ≤ +25oC
—
A
W
- P2
- P2
4.0
60
oC/W
R
Thermal Resistance, Junction to Ambient
—
THJA
30
R
THJC
Thermal Resistance, Junction to Case (heatsink) - P2
Junction Temperature
—
-55
-55
—
20
T
T
150
150
300
J
Storage Temperature
oC
S
T
Lead Temperature (Soldering, 10 seconds)
L
2
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions.
Symbol
Definition
High Side Floating Supply Absolute Voltage
High Voltage Supply
Min.
Max.
Units
V
V
O
+ 10
V + 20
O
B
V
214/224
420
—
250
IN
—
(note 1)
—
500
250
500
20
V
O
Half-Bridge Output Voltage
214/224
420
V
V
CC
Low Side and Logic Fixed Supply Voltage
Logic Input Voltage (HIN & LIN)
Ambient Temperature
10
0
oC
V
/V
IH IL
V
CC
T
A
-40
—
125
0.85
1.4
1.1
1.9
0.7
1.1
0.55
0.9
0.7
1.4
0.5
0.8
1.7
2.3
1.4
Id
Continuous Drain Current (TA = 25oC)
214
214-P2
224
—
—
224-P2
420
—
—
420-P2
214
—
(TA = 85oC)
—
A
214-P2
224
—
—
224-P2
420
—
—
420-P2
214-P2
224-P2
420-P2
—
(TC = 25oC)
—
—
—
Note 1:
Logic operational for VO of -5 to 250V (214/224) and 500V (420).
Logic state held for V0 of -5 to -V
B
3
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Dynamic Electrical Characteristics
V (V , V ) = 15V and T = 25°C unless otherwise specified. Switching time waveform definitions are shown in
BIAS CC BS A
figure 2.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
toff
tr
Turn-On Propagation Delay (see note 2)
Turn-Off Propagation Delay (see note 2)
Turn-On Rise Time (see note 2)
—
—
—
—
—
—
—
130
200
200
120
70
Vs = 0V
90
Vs = 500V
80
ns
tf
Turn-Off Fall Time (see note 2)
40
MT
trr
Delay Matching, HS & LS Turn-On/Off
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
30
—
260
0.7
—
I = 0.7A
F
Qrr
—
µC
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input
voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
V
(V , V ) = 15V and T = 25°C unless otherwise specified. The Input voltage and current levels are referenced to
BIAS CC
B
A
COM.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
CCUV
V
Supply Undervoltage Positive Going
CC
8.8
9.3
9.8
+
Threshold
V Supply Undervoltage Negative Going
CC
V
V
CCUV-
7.5
8.2
8.6
Threshold
I
Quiescent V
Supply Current
CC
—
—
—
2.7
—
—
—
—
—
—
—
—
140
20
240
50
50
—
µA
QCC
I
Quiescent V Supply Current
BS
QBS
I
os
Offset Supply Leakage Current
Logic “1” Input Voltage
—
V
= V = 500V
B S
V
IH
—
V
V= 10V to 20V
V
IL
Logic “0” Input Voltage
—
0.8
40
1.0
—
CC
I
Logic “1” Input Bias Current
Logic “0” Input Bias Current
Static Drain-to-Source On-Resistance
20
IN+
µA
I
—
IN-
Rds(on)
214
224
2.0
1.1
3.0
0.8
0.85
Ω
Ω
Ω
V
Id=850mA/TJ=150oC
Id=1.1A/TJ=150oC
Id=700mA/TJ=150oC
Id=700mA/TJ=150oC
Id=1.1A/TJ=150oC
—
420
—
VSD
Diode Forward Voltage
214/420
224
—
—
4
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Functional Block Diagram
V
VIN
B
D1
6
9
1
2
3
IRFCxxx
Vcc
H
V
O
S
IR2101
7
H
VO
IN
IRFCxxx
NOTE: xxx = 214 or 224 or 420
D1 included in HD type only
L
O
L
IN
4
COM
NOTE: xxx = 214 or 224 or 420
Lead Definitions
Symbol
Description
V
Logic and internal gate drive supply voltage.
Logic input for high side Half Bridge output, in phase
Logic input for low side Half Bridge output, in phase
High side gate drive floating supply
High voltage supply
CC
HIN
LIN
V
V
B
+
VO
Half Bridge output
COM
Logic and low side of Half Bridge return
Lead Assignments
1
2
3
4
6
7
9
V
cc
HIN
LIN
COM
9
7
V
VO
B
6
4
3
V
IN
2
1
5
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
5 0 %
5 0 %
H IN
H O
LIN
HIN
t
t
t
f
t
o n
o ff
r
9 0 %
9 0 %
1 0 %
1 0 %
V+
VO
0
V O
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
Figure 3. Delay Matching Waveform Definitions
6
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
16.89 (.665)
16.63 (.655)
NOTES:
1. Dimensioning & Tolerancing per
ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters
(inches)
3.18 (.125)
2.92 (.115)
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http://www.irf.com/
Data and specifications subject to change without notice.
5/98
7
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