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IPZ60R060C7 [INFINEON]

600V CoolMOS™ C7 超级结（SJ）MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗（E oss），在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外，IPL60R185C7也是高功率密度充电器的不二之选！;
IPZ60R060C7
型号： IPZ60R060C7
厂家： Infineon    Infineon
描述：

600V CoolMOS™ C7 超级结（SJ）MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗（E oss），在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外，IPL60R185C7也是高功率密度充电器的不二之选！

开关 功率因数校正
文件： 总15页 (文件大小：1296K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀC7  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
PG-TOꢀ247-4  
1ꢀꢀꢀꢀꢀDescription  
CoolMOS™ꢀC7ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
600VꢀCoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ  
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.  
Theꢀ600VꢀC7ꢀisꢀtheꢀfirstꢀtechnologyꢀeverꢀwithꢀRDS(on)*Aꢀbelowꢀ1Ohm*mm².  
Features  
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggednessꢀtoꢀ120V/ns  
•ꢀIncreasedꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg  
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package  
Drain  
Pin 1  
•ꢀEasyꢀtoꢀuse/drive  
Gate  
Pin 4  
•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Driver  
Source  
Pin 3  
Power  
Source  
Pin 2  
•ꢀ4pinꢀkelvinꢀsourceꢀconcept  
Benefits  
•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe  
application  
•ꢀHigherꢀdv/dtꢀlimitꢀenablesꢀfasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency  
•ꢀEnablingꢀhigherꢀsystemꢀefficiencyꢀbyꢀlowerꢀswitchingꢀlosses  
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀdueꢀtoꢀsmallerꢀpackages  
•ꢀSuitableꢀforꢀapplicationsꢀsuchꢀasꢀserver,ꢀtelecomꢀandꢀsolar  
•ꢀUpꢀtoꢀ0.5%ꢀbetterꢀfullꢀloadꢀefficiencyꢀ@100kHzꢀcomparedꢀtoꢀconventional  
3pinꢀpackage  
Applications  
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance  
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
650  
60  
Unit  
V
mΩ  
nC  
A
68  
ID,pulse  
135  
ID,continuous @ Tj<150°C 54  
A
Eoss@400V  
8.1  
µJ  
Body diode di/dt  
400  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPZ60R060C7  
PG-TO 247-4  
60C7060  
see Appendix A  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
35  
22  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
135  
159  
0.80  
6.4  
120  
20  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
mJ  
mJ  
A
ID=6.4A; VDD=50V; see table 10  
-
ID=6.4A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
162  
150  
150  
60  
W
°C  
°C  
TC=25°C  
Storage temperature  
-55  
-55  
-
-
-
Operating junction temperature  
Mounting torque  
-
Ncm M3 and M3.5 screws  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
35  
A
A
TC=25°C  
TC=25°C  
IS,pulse  
-
135  
VDS=0...400V,ꢀISD<=9.9A,ꢀTj=25°Cꢀꢀꢀꢀ  
Reverse diode dv/dt3)  
dv/dt  
-
-
20  
V/ns  
see table 8  
VDS=0...400V,ꢀISD<=9.9A,ꢀTj=25°Cꢀꢀꢀꢀ  
Maximum diode commutation speed  
Insulation withstand voltage  
dif/dt  
-
-
-
-
400  
n.a.  
A/µs  
see table 8  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max  
.
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
0.772 °C/W -  
Thermal resistance, junction - ambient RthJA  
62  
-
°C/W leaded  
°C/W n.a.  
°C 1.6mm (0.063 in.) from case for 10s  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3
Typ.  
-
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
3.5  
4
VDS=VGS,ꢀID=0.8mA  
-
-
-
10  
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.052 0.060  
0.115  
VGS=10V,ꢀID=15.9A,ꢀTj=25°C  
VGS=10V,ꢀID=15.9A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
0.8  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
2850  
54  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
101  
1050  
13  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=15.9A,  
RG=3.3Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=15.9A,  
RG=3.3Ω;ꢀseeꢀtableꢀ9  
7
VDD=400V,ꢀVGS=13V,ꢀID=15.9A,  
RG=3.3Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
64  
VDD=400V,ꢀVGS=13V,ꢀID=15.9A,  
RG=3.3Ω;ꢀseeꢀtableꢀ9  
3.8  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
14  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=15.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=15.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=15.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=15.9A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
23  
Qg  
68  
Gate plateau voltage  
Vplateau  
5.0  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.9  
-
V
VGS=0V,ꢀIF=15.9A,ꢀTj=25°C  
VR=400V,ꢀIF=15.9A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
390  
6
-
-
-
ns  
VR=400V,ꢀIF=15.9A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=15.9A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
32  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
180  
103  
10 µs  
160  
140  
120  
100  
80  
100 µs  
1 µs  
102  
101  
1 ms  
10 ms  
DC  
100  
60  
10-1  
10-2  
10-3  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
10 µs  
1 µs  
100 µs  
102  
101  
0.5  
0.2  
1 ms  
10 ms  
DC  
0.1  
100  
10-1  
0.05  
10-1  
10-2  
10-3  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
200  
120  
20 V  
20 V  
10 V  
8 V  
10 V  
8 V  
180  
160  
140  
120  
100  
80  
100  
80  
60  
40  
20  
0
7 V  
7 V  
6 V  
5.5 V  
6 V  
60  
5 V  
5.5 V  
40  
4.5 V  
5 V  
20  
4.5 V  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.25  
0.14  
5.5 V  
6.5 V  
6 V  
0.24  
0.23  
0.22  
0.21  
0.20  
0.19  
0.18  
0.17  
0.16  
0.15  
0.14  
0.13  
0.12  
0.11  
0.10  
7 V  
0.13  
0.12  
0.11  
0.10  
10 V  
20 V  
0.09  
98%  
0.08  
typ  
0.07  
0.06  
0.05  
0.04  
0.03  
0
20  
40  
60  
80  
100  
120  
140  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=15.9ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
200  
12  
120 V  
25 °C  
180  
160  
140  
120  
100  
80  
400 V  
10  
8
6
150 °C  
4
60  
40  
2
20  
0
0
0
2
4
6
8
10  
12  
0
10  
20  
30  
40  
50  
60  
70  
80  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=15.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
160  
140  
120  
100  
80  
125 °C  
101  
25 °C  
60  
100  
40  
20  
10-1  
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=6.4ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
700  
105  
680  
660  
640  
620  
600  
580  
560  
540  
520  
104  
Ciss  
103  
Coss  
102  
101  
Crss  
100  
10-1  
-60  
-30  
0
30  
60  
90  
120  
150  
0
100  
200  
300  
400  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-4  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2015-11-30  
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPZ60R060C7  
RevisionꢀHistory  
IPZ60R060C7  
Revision:ꢀ2015-11-30,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2015-11-30  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
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Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
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Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2015-11-30  

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