IPW65R125CFD7 [INFINEON]
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPW65R125CFD7 采用 TO-247 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品,IPW65R029CFD7 的栅极电荷更低,关断行为得以改善,反向恢复电荷较低,从而可显著提高效率与功率密度,且击穿电压可额外提高 50V。;型号: | IPW65R125CFD7 |
厂家: | Infineon |
描述: | 英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPW65R125CFD7 采用 TO-247 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品,IPW65R029CFD7 的栅极电荷更低,关断行为得以改善,反向恢复电荷较低,从而可显著提高效率与功率密度,且击穿电压可额外提高 50V。 电站 栅 服务器 电信 栅极 |
文件: | 总14页 (文件大小:1380K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPW65R125CFD7
MOSFET
PG-TOꢀ247-3
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof
theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.
Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal
behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant
switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs
partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends
allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard
commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets
highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh
powerꢀdensityꢀsolutions.
Tab
1
2
3
Features
Drain
Pin 2, Tab
•ꢀUltra-fastꢀbodyꢀdiode
•ꢀ650Vꢀbreakꢀdownꢀvoltage
•ꢀBest-in-classꢀRDS(on)
*1
Gate
Pin 1
*2
•ꢀReducedꢀswitchingꢀlosses
•ꢀLowꢀRDS(on)ꢀdependencyꢀoverꢀtemperature
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀExcellentꢀhardꢀcommutationꢀruggedness
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies
Potentialꢀapplications
SuitableꢀforꢀSoftꢀSwitchingꢀtopologies
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,
Telecom,ꢀEVꢀCharging,ꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
700
125
36
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
72
Eoss @ 400V
Body diode diF/dt
5.1
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPW65R125CFD7
PG-TO247-3
65R125F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
19
12
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
72
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
85
mJ
mJ
A
ID=4.1A; VDD=50V; see table 10
-
0.42
4.1
120
20
ID=4.1A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
98
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
60
-
-
Operating junction temperature
Mounting torque
-
Ncm M3 and M3.5 screws
Continuous diode forward current1)
Diode pulse current2)
IS
-
19
A
A
TC=25°C
TC=25°C
IS,pulse
-
72
VDS=0...400V,ꢀISD<=8.5A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=8.5A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.27
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.42mA
-
-
-
7
1
37
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
0.1
0.222
0.125
-
VGS=10V,ꢀID=8.5A,ꢀTj=25°C
VGS=10V,ꢀID=8.5A,ꢀTj=150°C
RDS(on)
RG
Ω
-
8.5
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1694
28
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
64
661
23
14
112
5
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=8.5A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=8.5A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=8.5A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=8.5A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
10
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=8.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=8.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=8.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=8.5A,ꢀVGS=0ꢀtoꢀ10V
Qgd
11
Qg
36
Gate plateau voltage
Vplateau
5.7
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=8.5A,ꢀTj=25°C
VR=400V,ꢀIF=8.5A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
104
0.52
8.6
156
1.04
-
ns
VR=400V,ꢀIF=8.5A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=8.5A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
100
102
1 µs
10 µs
80
60
40
20
0
101
100
100 µs
1 ms
10-1
10-2
10-3
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
10 µs
101
100
100
100 µs
0.5
0.2
0.1
1 ms
10-1
10-2
10-3
10-1
0.05
0.02
10 ms
DC
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
150
80
20 V
10 V
70
60
50
40
30
20
10
0
20 V
120
8 V
7 V
10 V
8 V
90
60
7 V
6 V
30
5.5 V
6 V
5 V
5.5 V
4.5 V 5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.300
2.5
5.5 V
6 V
7 V
6.5 V
2.0
1.5
1.0
0.5
0.260
0.220
0.180
20 V
10 V
0
20
40
60
80
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=8.5ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
150
12
400 V
120 V
125
10
8
25 °C
100
75
6
150 °C
50
25
0
4
2
0
0
2
4
6
8
10
12
0
10
20
30
40
50
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=8.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
100
80
60
40
20
0
101
125 °C
25 °C
100
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=4.1ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
730
105
104
700
670
640
610
580
Ciss
103
102
101
100
10-1
Coss
Crss
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
8
6
4
2
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4
5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7ꢀ650VꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2020-10-27
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPW65R125CFD7
RevisionꢀHistory
IPW65R125CFD7
Revision:ꢀ2020-10-27,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-10-27
Trademarks
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Publishedꢀby
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81726ꢀMünchen,ꢀGermany
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2020-10-27
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