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IPTC017N12NM6 [INFINEON]

This is a normal level 120 V MOSFET in TO-Leaded top-side cooling (TOLT) packaging with 1.7 mOhm on-resistance.  IPTC017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.;
IPTC017N12NM6
型号： IPTC017N12NM6
厂家： Infineon    Infineon
描述：

This is a normal level 120 V MOSFET in TO-Leaded top-side cooling (TOLT) packaging with 1.7 mOhm on-resistance.  IPTC017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
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IPTC017N12NM6  
MOSFET  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
PG-HDSOP-16  
16  
9
16  
Features  
9
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀHighꢀavalancheꢀenergyꢀrating  
1
8
8
1
•ꢀ175°Cꢀoperatingꢀtemperature  
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀTopꢀsideꢀcooling  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020  
Drain  
Pin 9-16, Tab  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Gate  
Pin 8  
Source  
Pin 1-7  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
120  
1.7  
Unit  
VDS  
V
RDS(on),max  
mΩ  
A
ID  
331  
266  
113  
301  
Qoss  
nC  
nC  
nC  
QG  
Qrrꢀ(1000ꢀA/µs)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPTC017N12NM6  
PG-HDSOP-16  
017N12N6  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
331  
234  
213  
32  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=8ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,TA=25ꢀ°C,RTHJA=40°C/W2)  
Pulsed drain current3)  
ID,pulse  
IAS  
-
-
-
-
-
1324  
150  
A
A
TA=25ꢀ°C  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
-
TC=25ꢀ°C  
EAS  
VGS  
-
1328 mJ  
ID=77ꢀA,ꢀRGS=25ꢀΩ  
-20  
20  
V
-
-
-
-
-
395  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
°C  
TA=25ꢀ°C,ꢀRTHJA=40ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.38  
°C/W -  
°C/W -  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
-
-
40  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information.  
4) See Diagram 13 for more detailed information.  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
120  
2.6  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
3.1  
3.6  
VDS=VGS,ꢀID=275ꢀµA  
-
-
0.1  
10  
1
100  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.48  
1.67  
1.7  
2.06  
VGS=10ꢀV,ꢀID=150ꢀA  
VGS=8ꢀV,ꢀID=75ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
0.55  
125  
1.1  
1.65  
-
Ω
-
Transconductance  
250  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=150ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
8100 11000 pF  
2400 3100 pF  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz  
40  
19  
70  
-
pF  
ns  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,  
RG,ext=1.6ꢀΩ  
17  
34  
19  
-
-
-
ns  
ns  
ns  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=75ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
41  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
53  
31  
38  
-
Gate to source charge1)  
Gate charge at threshold1)  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=60ꢀV,ꢀID=75ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=60ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
25  
25  
Qsw  
40  
Gate charge total1)  
Qg  
113  
5.0  
141  
-
Gate plateau voltage  
Output charge1)  
Vplateau  
Qoss  
266  
333  
nC  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
331  
1324  
1.0  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.87  
40  
V
VGS=0ꢀV,ꢀIF=150ꢀA,ꢀTj=25ꢀ°C  
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=300ꢀA/µs  
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=300ꢀA/µs  
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=1000ꢀA/µs  
VR=60ꢀV,ꢀIF=75ꢀA,ꢀdiF/dt=1000ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
Reverse recovery time1)  
Reverse recovery charge1)  
80  
ns  
nC  
ns  
nC  
Qrr  
trr  
111  
35  
222  
70  
Qrr  
301  
602  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
400  
350  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
101  
single pulse  
0.01  
0.02  
0.05  
0.1  
0.2  
103  
1 µs  
10 µs  
100  
0.5  
102  
100 µs  
10 ms  
101  
100  
10-1  
10-2  
10-3  
1 ms  
DC  
10-1  
10-2  
100  
101  
102  
103  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1400  
5
1200  
10 V  
8 V  
4
1000  
5.5 V  
800  
6 V  
7 V  
3
600  
7 V  
400  
2
8 V  
6 V  
10 V  
200  
5.5 V  
5 V  
0
1
0
1
2
3
4
5
0
100  
200  
300  
400  
500  
600  
700  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1400  
4.0  
3.5  
3.0  
1200  
1000  
800  
600  
400  
200  
0
25 °C  
175 °C  
175 °C  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100 °C  
25 °C  
-55 °C  
0
2
4
6
8
10  
4
6
8
10  
12  
14  
16  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=150ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
4.0  
3.5  
3.0  
2.5  
2.0  
1.6  
1.2  
0.8  
0.4  
2750 µA  
275 µA  
2.0  
1.5  
1.0  
0.5  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=150ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
104  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
104  
103  
102  
101  
Ciss  
103  
102  
101  
Coss  
Crss  
0
20  
40  
60  
80  
100  
120  
0.2  
0.6  
1.0  
1.4  
1.8  
2.2  
2.6  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
24 V  
60 V  
96 V  
9
8
7
6
5
4
3
2
1
0
102  
25 °C  
100 °C  
150 °C  
101  
100  
100  
101  
102  
103  
0
20  
40  
60  
80  
100  
120  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=75ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
135  
130  
125  
120  
115  
110  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-HDSOP-16-U01  
DATE: 18.12.2020  
REVISION: 01  
MILLIMETERS  
DIMENSIONS  
MIN.  
MAX.  
2.35  
A
A1  
b
2.25  
0.01  
0.60  
0.40  
9.70  
8.20  
14.80  
10.00  
5.57  
0.16  
0.80  
c
0.60  
D
10.10  
8.40  
D1  
E
15.20  
10.30  
5.77  
E1  
E2  
e
1.20  
8.40  
e1  
L
1.40  
2.90  
1.60  
3.10  
P
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HDSOP-16,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2022-12-13  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV  
IPTC017N12NM6  
RevisionꢀHistory  
IPTC017N12NM6  
Revision:ꢀ2022-12-13,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2022-12-02  
2022-12-13  
Release of final version  
Update Rds(on) typ  
Trademarks  
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Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2022-12-13  

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