IPP65R190CFD7A [INFINEON]
TO-220 封装中的 190mOhm IPP65R190CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。;
| 型号： | IPP65R190CFD7A |
| 厂家： | 
Infineon |
| 描述： | TO-220 封装中的 190mOhm IPP65R190CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。 |
| 文件： | 总14页 (文件大小：1733K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP65R190CFD7A
MOSFET
PG-TOꢀ220
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
tab
650VꢀCoolMOS™ꢀCFD7AꢀisꢀInfineon'sꢀlatestꢀgenerationꢀofꢀmarketꢀleading
automotiveꢀqualifiedꢀhighꢀvoltageꢀCoolMOS™ꢀMOSFETs.ꢀInꢀadditionꢀtoꢀthe
well-knownꢀattributesꢀofꢀhighꢀqualityꢀandꢀreliabilityꢀrequiredꢀbyꢀthe
automotiveꢀindustry,ꢀtheꢀnewꢀCoolMOS™ꢀCFD7Aꢀseriesꢀprovidesꢀforꢀan
integratedꢀfastꢀbodyꢀdiodeꢀandꢀcanꢀbeꢀusedꢀforꢀPFCꢀandꢀresonant
switchingꢀtopologiesꢀlikeꢀtheꢀZVSꢀphase-shiftꢀfull-bridgeꢀandꢀLLC.
Features
•ꢀLatestꢀ650Vꢀautomotiveꢀqualifiedꢀtechnologyꢀwithꢀintegratedꢀfastꢀbody
diodeꢀonꢀtheꢀmarketꢀfeaturingꢀultraꢀlowꢀQrr
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀ100%ꢀavalancheꢀtested
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages
Drain
Pin 2, Tab
*1
Gate
Pin 1
Benefits
*2
•ꢀOptimizedꢀforꢀhigherꢀbatteryꢀvoltagesꢀupꢀtoꢀ475ꢀVꢀthanksꢀtoꢀfurther
improvedꢀrobustness
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
•ꢀLowerꢀswitchingꢀlossesꢀenablingꢀhigherꢀswitchingꢀfrequencies
•ꢀHighꢀqualityꢀandꢀreliability
•ꢀIncreasedꢀefficiencyꢀinꢀlightꢀloadꢀandꢀfullꢀloadꢀconditions
Potentialꢀapplications
SuitableꢀforꢀPFCꢀandꢀDC-DCꢀstagesꢀfor:
•ꢀUnidirectionalꢀandꢀbidirectionalꢀDC-DCꢀconverters,
•ꢀOn-BoardꢀbatteryꢀChargers
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀAECꢀQ101
Pleaseꢀnote:ꢀForꢀproductionꢀpartꢀapprovalꢀprocessꢀ(PPAP)ꢀreleaseꢀwe
proposeꢀtoꢀshareꢀapplicationꢀrelatedꢀinformationꢀduringꢀanꢀearlyꢀdesign
phaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.ꢀPleaseꢀcontactꢀInfineonꢀsales
office.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
650
190
28
Unit
VDS
V
RDS(on),max
Qg,typ
mΩ
nC
A
ID,pulse
55
Eoss @ 400V
Body diode diF/dt
3.7
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP65R190CFD7A
PG-TO220-3
65A190F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
14
9
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
55
A
TC=25°C
Avalanche energy, single pulse
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
64
mJ
A
ID=3.6A; VDD=50V; see table 10
-
-
3.6
120
20
dv/dt
VGS
VGS,pulse
Ptot
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
frepetition<=100kHz, tpulse <= 2ns
77
W
°C
°C
TC=25°C
Storage temperature
Tstg
Tj
-55
-40
-
150
150
60
-
-
Operating junction temperature
Mounting torque
-
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current2)
IS
-
14
A
A
TC=25°C
TC=25°C
IS,pulse
-
55
VDS=0...400V,ꢀISD<=6.4A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt3)
dv/dt
diF/dt
-
-
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=6.4A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
1300 A/µs
see table 8
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
Tsold
-
1.62
°C/W -
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
For applications with applied blocking voltage > 475 V, it is required that the customer evaluates the impact of
cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical
support by Infineon.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage1)
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.32mA
-
-
-
25
1
-
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
IGSS
RDS(on)
RG
µA
µA
Gate-source leakage current incl.
protection diode
-
-
1
VGS=20V,ꢀVDS=0V
-
-
0.159 0.190
0.356
VGS=10V,ꢀID=6.4A,ꢀTj=25°C
VGS=10V,ꢀID=6.4A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
-
10.0
-
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
1291
20
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
46
479
27
15
100
5
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=6.4A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=6.4A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=6.4A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=6.4A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
1) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of
potential “linear mode”, please contact Infineon sales office.
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
7
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=6.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=6.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=6.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=6.4A,ꢀVGS=0ꢀtoꢀ10V
Qgd
9
Qg
28
Gate plateau voltage
Vplateau
5.7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=6.4A,ꢀTj=25°C
VR=400V,ꢀIF=6.4A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
97
-
-
-
ns
VR=400V,ꢀIF=6.4A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
0.46
8.4
µC
A
VR=400V,ꢀIF=6.4A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
80
102
1 µs
101
10 µs
60
40
20
0
100
100 µs
1 ms
10-1
10-2
10-3
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
101
100
10 µs
100 µs
1 ms
100
0.5
0.2
0.1
10-1
10-2
10-3
0.05
10-1
0.02
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
90
50
40
30
20
10
0
20 V
20 V
10 V
75
60
45
30
15
10 V
8 V
8 V
7 V
7 V
6 V
5.5 V
6 V
5 V
10
5.5 V
4.5 V
5 V
10
4.5 V
0
0
5
15
20
0
5
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.480
2.5
0.440
6.5 V
7 V
6 V
5.5 V
2.0
1.5
1.0
0.5
0.400
0.360
0.320
0.280
10 V
20 V
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=6.4ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
90
12
10
8
25 °C
75
60
45
30
15
0
400 V
120 V
6
150 °C
4
2
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=6.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
70
60
50
40
30
20
10
0
101
125 °C
25 °C
100
10-1
0.0
0.3
0.6
0.9
1.2
1.5
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=3.6ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
750
105
104
103
102
101
100
10-1
720
690
660
630
600
Ciss
Coss
Crss
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
5
4
3
2
1
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7AꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7Aꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7Aꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2021-11-22
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPP65R190CFD7A
RevisionꢀHistory
IPP65R190CFD7A
Revision:ꢀ2021-11-22,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.1
2020-08-27
2021-11-22
Change of wording regarding breakdown voltage / cosmic ray
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2021-11-22
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