IPP65R110CFD7 [INFINEON]
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPP65R110CFD7 采用 TO-220 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品,IPP65R110CFD7 的栅极电荷更低,关断行为得以改善,反向恢复电荷较低,从而可显著提高效率与功率密度,且击穿电压可额外提高 50V。;![IPP65R110CFD7](http://pdffile.icpdf.com/pdf2/p00362/img/icpdf/IPP65R110CFD_2216334_icpdf.jpg)
型号: | IPP65R110CFD7 |
厂家: | ![]() |
描述: | 英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPP65R110CFD7 采用 TO-220 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品,IPP65R110CFD7 的栅极电荷更低,关断行为得以改善,反向恢复电荷较低,从而可显著提高效率与功率密度,且击穿电压可额外提高 50V。 电站 栅 服务器 电信 栅极 |
文件: | 总14页 (文件大小:1056K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPP65R110CFD7
MOSFET
PG-TOꢀ220
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
tab
Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof
theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.
Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal
behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant
switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs
partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends
allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard
commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets
highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh
powerꢀdensityꢀsolutions.
Features
Drain
Pin 2, Tab
•ꢀUltra-fastꢀbodyꢀdiode
•ꢀ650Vꢀbreakꢀdownꢀvoltage
•ꢀBest-in-classꢀRDS(on)
*1
Gate
Pin 1
*2
•ꢀReducedꢀswitchingꢀlosses
•ꢀLowꢀRDS(on)ꢀdependencyꢀoverꢀtemperature
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀExcellentꢀhardꢀcommutationꢀruggedness
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications
•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies
Potentialꢀapplications
SuitableꢀforꢀSoftꢀSwitchingꢀtopologies
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,
Telecom,ꢀEVꢀCharging,ꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
700
110
41
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
82
Eoss @ 400V
Body diode diF/dt
5.8
µJ
1300
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP65R110CFD7
PG-TO220-3
65R110F7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
22
14
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
82
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
97
mJ
mJ
A
ID=4.7A; VDD=50V; see table 10
-
0.48
4.7
120
20
ID=4.7A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
114
150
150
60
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm M3 and M3.5 screws
Continuous diode forward current1)
Diode pulse current2)
IS
-
22
A
A
TC=25°C
TC=25°C
IS,pulse
-
82
VDS=0...400V,ꢀISD<=9.7A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=9.7A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.1
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.48mA
-
-
-
8
1
37
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
0.087 0.110
0.194
VGS=10V,ꢀID=9.7A,ꢀTj=25°C
VGS=10V,ꢀID=9.7A,ꢀTj=150°C
RDS(on)
RG
Ω
Ω
-
-
6.0
-
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1942
32
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
73
751
17
9
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
71
5
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
11
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V
Qgd
13
Qg
41
Gate plateau voltage
Vplateau
5.7
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=9.7A,ꢀTj=25°C
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
110
0.56
8.7
165
1.12
-
ns
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
125
102
1 µs
10 µs
100
75
50
25
0
101
100
100 µs
1 ms
10-1
10-2
10-3
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
10 µs
101
100
100
100 µs
0.5
0.2
0.1
1 ms
10-1
10-2
10-3
10-1
0.05
0.02
10 ms
DC
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
150
100
20 V
10 V
20 V
10 V
120
80
60
40
20
0
8 V
8 V
7 V
90
60
30
0
7 V
6 V
5.5 V
6 V
5 V
4.5 V
5.5 V
4.5 V 5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.260
2.5
5.5 V
6.5 V
7 V
6 V
0.240
0.220
0.200
0.180
0.160
2.0
1.5
1.0
0.5
20 V
10 V
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=9.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
200
12
400 V
120 V
10
8
150
25 °C
100
6
150 °C
4
50
2
0
0
0
2
4
6
8
10
12
0
10
20
30
40
50
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=9.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
100
80
60
40
20
0
101
100
10-1
25°CC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=4.7ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
730
105
104
700
670
640
610
580
Ciss
103
102
101
100
10-1
Coss
Crss
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
j
m
m
c
j
m
m
MILLIMETERS
INCHES
DIM
MIN
4.30
1.17
2.15
0.65
0.95
0.95
0.65
0.33
14.81
8.51
12.19
9.70
6.50
MAX
4.57
MIN
MAX
DOCUMENT NO.
Z8B00003318
A
A1
A2
b
0.169
0.046
0.085
0.026
0.037
0.037
0.026
0.013
0.583
0.335
0.480
0.382
0.256
0.180
0.055
0.107
0.034
0.055
0.045
0.045
0.024
0.628
0.372
0.516
0.408
0.339
1.40
2.72
0.86
1.40
1.15
1.15
0.60
15.95
9.45
13.10
10.36
8.60
0
SCALE
b1
b2
b3
c
2.5
0
2.5
5mm
D
D1
D2
E
EUROPEAN PROJECTION
E1
e
2.54
5.08
3
0.100
0.200
3
e1
N
ISSUE DATE
30-07-2009
H1
L
5.90
13.00
-
6.90
14.00
4.80
3.89
3.00
0.232
0.512
-
0.272
0.551
0.189
0.153
0.118
REVISION
L1
¡3
Q
06
3.60
2.60
0.142
0.102
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀCFD7ꢀ650VꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2020-10-30
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice
IPP65R110CFD7
RevisionꢀHistory
IPP65R110CFD7
Revision:ꢀ2020-10-30,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-10-30
Trademarks
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Publishedꢀby
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81726ꢀMünchen,ꢀGermany
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Warnings
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2020-10-30
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/IPB65R110CFD_1610317_files/IPB65R110CFD_1610317_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00268/img/page/IPB65R110CFD_1610317_files/IPB65R110CFD_1610317_2.jpg)
IPP65R110CFDA
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/IPP65R110CFD_1859079_files/IPP65R110CFD_1859079_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/IPP65R110CFD_1859079_files/IPP65R110CFD_1859079_2.jpg)
IPP65R110CFDAAKSA1
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00283/img/page/IPP65R110CFD_1685961_files/IPP65R110CFD_1685961_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00283/img/page/IPP65R110CFD_1685961_files/IPP65R110CFD_1685961_2.jpg)
IPP65R110CFDXKSA1
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00363/img/page/IPP65R125C7_2224343_files/IPP65R125C7_2224343_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00363/img/page/IPP65R125C7_2224343_files/IPP65R125C7_2224343_2.jpg)
IPP65R125C7
英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步,在全球范围内实现了低 RDS(on)/封装,并且得益于其低开关损耗,可在全负载范围内提高效率。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00360/img/page/IPP65R150CFD_2206729_files/IPP65R150CFD_2206729_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00360/img/page/IPP65R150CFD_2206729_files/IPP65R150CFD_2206729_2.jpg)
IPP65R150CFDA
650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求,还集成快速体二极管。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/IPP65R150CFD_1861450_files/IPP65R150CFD_1861450_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/IPP65R150CFD_1861450_files/IPP65R150CFD_1861450_2.jpg)
IPP65R150CFDAAKSA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00293/img/page/IPP65R150CFD_1773463_files/IPP65R150CFD_1773463_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00293/img/page/IPP65R150CFD_1773463_files/IPP65R150CFD_1773463_2.jpg)
IPP65R150CFDXKSA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
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![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IPP65R190C7_2243954_files/IPP65R190C7_2243954_2.jpg)
IPP65R190C7
英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步,在全球范围内实现了低 RDS(on)/封装,并且得益于其低开关损耗,可在全负载范围内提高效率。
INFINEON
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![](http://pdffile.icpdf.com/pdf2/p00303/img/page/IPP65R190CFD_1827445_files/IPP65R190CFD_1827445_2.jpg)
IPP65R190CFD
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
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