IPP076N15N5 [INFINEON]
英飞凌新推出的 OptiMOS™5 150 V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。新产品突破性地降低了 R DS(on)(与 SuperSO8 中的下一个理想替代品相比高达 25%)和 Q rr,而不影响 FOM gd 和 FOM OSS,从而在优化系统效率的同时有效减少设计工作量。此外,超低反向恢复电荷(在 SuperSO8 中,Q rr = 26 nC)提高了换流坚固性。;![IPP076N15N5](http://pdffile.icpdf.com/pdf2/p00365/img/icpdf/IPP076N15N5_2231122_icpdf.jpg)
型号: | IPP076N15N5 |
厂家: | ![]() |
描述: | 英飞凌新推出的 OptiMOS™5 150 V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。新产品突破性地降低了 R DS(on)(与 SuperSO8 中的下一个理想替代品相比高达 25%)和 Q rr,而不影响 FOM gd 和 FOM OSS,从而在优化系统效率的同时有效减少设计工作量。此外,超低反向恢复电荷(在 SuperSO8 中,Q rr = 26 nC)提高了换流坚固性。 通信 局域网 驱动 开关 脉冲 晶体管 驱动器 |
文件: | 总10页 (文件大小:1677K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPP076N15N5
MOSFET
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
TO-220-3
tab
Features
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
150
7.6
Unit
VDS
V
Gate
Pin 1
RDS(on),max
mΩ
A
Source
Pin 3
ID
112
96
Qrr
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP076N15N5
PG-TO220-3
076N15N5
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
112
79
TC=25ꢀ°C
A
Continuous drain current
ID
TC=100ꢀ°C
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
448
130
20
A
TC=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
214
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.7
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
62
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.8
4.6
VDS=VGS,ꢀID=160ꢀµA
-
-
0.1
10
1
100
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
5.9
6.4
7.6
8.4
VGS=10ꢀV,ꢀID=56ꢀA
VGS=8ꢀV,ꢀID=28ꢀA
RDS(on)
mΩ
Gate resistance3)
Transconductance
RG
gfs
-
1.1
90
1.7
-
Ω
-
45
S
|VDS|>2|ID|RDS(on)max,ꢀID=56ꢀA
1) See Diagram 3
2) See Diagram 13
3) Defined by design. Not subject to production test.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
3600 4700 pF
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
900
21
1200 pF
37
-
pF
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=56ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
14
4
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=56ꢀA,
RG,ext=1.6ꢀΩ
-
-
-
ns
ns
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=56ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
20
4
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=56ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
21
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=75ꢀV,ꢀID=56ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=56ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=56ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=56ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=56ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀVGS=0ꢀV
Qgd
10
15
-
Qsw
Qg
17
49
61
-
Vplateau
Qoss
5.7
136
181
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
112
448
1.1
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.89
69
96
V
VGS=0ꢀV,ꢀIF=56ꢀA,ꢀTj=25ꢀ°C
VR=75ꢀV,ꢀIF=56ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=75ꢀV,ꢀIF=56ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
138
192
ns
nC
Qrr
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
240
120
200
160
120
80
100
80
60
40
20
0
40
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
10 µs
100 µs
0.5
0.2
102
101
100
10-1
1 ms
10-1
0.1
10 ms
0.05
0.02
0.01
DC
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
12
5.5 V
10 V
350
300
250
200
150
100
50
8 V
6 V
10
7 V
8 V
8
7 V
10 V
6
4
2
0
6 V
5.5 V
5 V
0
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
250
160
140
120
100
80
200
150
100
60
40
50
20
175 °C
25 °C
0
0
0
2
4
6
8
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1600 µA
15
160 µA
max
10
typ
5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=56ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
Ciss
25°C max
175°C max
103
102
101
100
102
101
100
Coss
Crss
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
75 V
8
6
4
2
0
30 V
120 V
102
25 °C
100 °C
125 °C
101
100
100
101
102
103
0
20
40
60
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=56ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
165
160
155
150
145
140
135
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPP076N15N5
RevisionꢀHistory
IPP076N15N5
Revision:ꢀ2016-03-03,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-03-03
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
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TrademarksꢀupdatedꢀAugustꢀ2015
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TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2016-03-03
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/IPP082N10NF2_2256640_files/IPP082N10NF2_2256640_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/IPP082N10NF2_2256640_files/IPP082N10NF2_2256640_2.jpg)
IPP082N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 8.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP082N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IPP083N10N5_2226163_files/IPP083N10N5_2226163_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IPP083N10N5_2226163_files/IPP083N10N5_2226163_2.jpg)
IPP083N10N5
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00360/img/page/IPB083N10N3-_2205130_files/IPB083N10N3-_2205130_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00360/img/page/IPB083N10N3-_2205130_files/IPB083N10N3-_2205130_2.jpg)
IPP086N10N3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。
INFINEON
![](http://pdffile.icpdf.com/pdf1/p00176/img/page/IPP08_987204_files/IPP08_987204_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00176/img/page/IPP08_987204_files/IPP08_987204_2.jpg)
IPP086N10N3G
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
INFINEON
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