IPP041N04N G [INFINEON]
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;
| 型号： | IPP041N04N G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。 开关 电机 服务器 转换器 |
| 文件： | 总10页 (文件大小：688K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP041N04N G
IPB041N04N G
!"#$%!&™3 Power-Transistor
Product Summary
Features
V DS
40
4.1
80
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
mW
A
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB041N04N G
IPP041N04N G
Package
Marking
PG-TO263-3
041N04N
PG-TO220-3
041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
80
80
A
Pulsed drain current2)
I D,pulse
I AS
T C=25 °C
400
80
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=80 A, R GS=25 W
60
mJ
V
±20
1) J-STD20 and JESD22
Rev. 1.2
page 1
2009-12-17
IPP041N04N G
IPB041N04N G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
94
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
1.6
62
40
K/W
R thJA
minimal footprint
6 cm² cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
40
2
-
-
-
V
V GS(th)
V DS=V GS, I D=45 µA
4
V DS=40 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=40 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
10
3.3
1.6
100 nA
Drain-source on-state resistance5)
Gate resistance
R DS(on) V GS=10 V, I D=80 A
4.1
-
mW
R G
W
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
50
100
-
S
I D=80 A
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.2
page 2
2009-12-17
IPP041N04N G
IPB041N04N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
3400
980
36
4500 pF
V GS=0 V, V DS=20 V,
C oss
Crss
t d(on)
t r
1300
-
f =1 MHz
16
-
-
-
-
ns
3.8
23
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
4.8
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
18
10.3
5.3
-
-
nC
Q g(th)
Q gd
-
V DD=20 V, I D=30 A,
V GS=0 to 10 V
Q sw
12.5
42
-
Q g
Gate charge total
56
-
V plateau
Gate plateau voltage
5.1
V
V DS=0.1 V,
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
40
41
-
-
nC
V GS=0 to 10 V
Q oss
V DD=20 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
78
A
T C=25 °C
I S,pulse
400
V GS=0 V, I F=80 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.96
46
1.2
-
V
V R=20 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2009-12-17
IPP041N04N G
IPB041N04N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS!10 V
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
100 µs
102
100
0.5
DC
1 ms
0.2
0.1
101
10 ms
10-1
0.05
0.02
0.01
100
single pulse
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.2
page 4
2009-12-17
IPP041N04N G
IPB041N04N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
8
10 V
5.5 V
7
6 V
250
200
150
100
50
7 V
6.5 V
6
5
4
3
2
1
0
7 V
6.5 V
10 V
6 V
5.5 V
5 V
0
0
1
2
3
0
40
80
120
160
200
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
100
50
120
100
80
60
40
20
0
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
V GS [V]
I D [A]
Rev. 1.2
page 5
2009-12-17
IPP041N04N G
IPB041N04N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=80 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 mA
8
7
6
4
3
2
1
0
5
98 %
4
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
25 °C, 98%
Ciss
Coss
175 °C, 98%
103
102
101
100
25 °C
175 °C
10
Crss
1
0
0
10
20
V DS [V]
30
40
0.5
1
1.5
2
V SD [V]
Rev. 1.2
page 6
2009-12-17
IPP041N04N G
IPB041N04N G
13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
100
12
10
8
20 V
8 V
25 °C
32 V
100 °C
150 °C
10
6
4
2
1
10-1
0
100
101
t AV [µs]
102
103
0
10
20
30
40
50
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
40
35
30
25
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q g d
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.2
page 7
2009-12-17
IPP041N04N G
IPB041N04N G
Package Outline
PG-TO220-3-1
Rev. 1.2
page 8
2009-12-17
IPP041N04N G
IPB041N04N G
Package Outline
PG-TO263-3
Rev. 1.2
page 9
2009-12-17
IPP041N04N G
IPB041N04N G
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# ꢖ $ $ ꢕ ꢊ ꢋ ꢌꢄꢋ ꢇ ꢍ ꢋ ꢎ ꢇ ꢏ ꢆ ꢋ ꢍ ꢃꢍ ꢐ ꢄꢇ ꢅ ꢑ ꢒ
ꢑ ꢃꢃ % ꢄꢐ ꢆ &ꢅ % ꢇ ꢅ ꢇ 'ꢇ ꢈ (
Rev. 1.2
page 10
2009-12-17
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