IPLK70R1K4P7 [INFINEON]
CoolMOS™ P7超结 (SJ) MOSFET 系列旨在解决低功耗开关电源市场的典型挑战,具备卓越的性能和易用性,更小的外形尺寸和更高的价格竞争力。ThinPAK 5x6 封装的特点是占用空间非常小,仅为 5x6 mm²,低剖面高度仅为 1 mm。再加上其标杆的低寄生效应,正是这些特点造就了其更小的外形尺寸,同时还有助于提高功率密度。此组合使ThinPAK 封装中的 CoolMOS™P7成为了其目标应用的完美选择。700V CoolMOS™ P7 系列针对反激式拓扑结构进行了优化。;型号: | IPLK70R1K4P7 |
厂家: | Infineon |
描述: | CoolMOS™ P7超结 (SJ) MOSFET 系列旨在解决低功耗开关电源市场的典型挑战,具备卓越的性能和易用性,更小的外形尺寸和更高的价格竞争力。ThinPAK 5x6 封装的特点是占用空间非常小,仅为 5x6 mm²,低剖面高度仅为 1 mm。再加上其标杆的低寄生效应,正是这些特点造就了其更小的外形尺寸,同时还有助于提高功率密度。此组合使ThinPAK 封装中的 CoolMOS™P7成为了其目标应用的完美选择。700V CoolMOS™ P7 系列针对反激式拓扑结构进行了优化。 开关 |
文件: | 总13页 (文件大小:1797K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPLK70R1K4P7
MOSFET
ThinPAKꢀ5x6
8
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
7
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
6
5
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
lighting,ꢀTV,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
1
2
3
4
*1: Internal body diode
*2: Internal ESD diode
Drain
Pin 5,6,7,8
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀExcellentꢀthermalꢀbehavior
*1
Gate
Pin 4
*2
•ꢀIntegratedꢀESDꢀprotectionꢀdiode
•ꢀLowꢀswitchingꢀlossesꢀ(Eoss
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
)
Kelvin
Source
Pin 3
Source
Pin 1,2
Benefits
•ꢀCostꢀcompetitiveꢀtechnology
•ꢀLowerꢀtemperature
•ꢀHighꢀESDꢀruggedness
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
Potentialꢀapplications
RecommendedꢀforꢀFlybackꢀtopologiesꢀinꢀChargersꢀandꢀAdapters
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Value
700
1.4
4.7
8.2
0.6
3
Unit
V
Ω
Qg,typ
nC
A
ID,pulse
Eoss @ 400V
V(GS)th,typ
µJ
V
ESD class (HBM)
1C
Typeꢀ/ꢀOrderingꢀCode
Package
ThinPAK 5x6 SMD
Marking
RelatedꢀLinks
see Appendix A
IPLK70R1K4P7
70R1K4P7
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
3.9
2.4
TC = 20°C
A
Continuous drain current1)
Pulsed drain current2)
ID
TC = 100°C
ID,pulse
IAS
-
-
-
-
8.2
-
A
A
TC=25°C
Application (Flyback) relevant
avalanche current, single pulse3)
measured with standard leakage
inductance of transformer of 5µH
2.4
-
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
VGS
100
V/ns VDSꢀ=0...400V
-16
-30
-
-
16
30
static;
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
-
22.7
150
5.7
8.2
1
W
°C
A
TC=25°C
-
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt4)
Maximum diode commutation speed4) dif/dt
Tj,ꢀTstg
IS
-55
-
-
-
-
-
TC=25°C
TC = 25°C
IS,pulse
A
dv/dt
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
50
Insulation withstand voltage VISO
n.a.
V
Vrms, TC=25°C, t=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
5.5
Thermal resistance, junction
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
80
°C/W Device on PCB, minimal footprint
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
°C/W thickness) copper area for drain
connection and cooling. PCB is
vertical without airflow.
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
35
-
62
Soldering temperature, wave- & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3) Proven during verification test. Avalanche value is assuming only the energy from a Flyback transformer leakage inductance is
transferred to the MOSFET. For less common avalanche situations it is recommended to contact Infineon for more information.
For explanation please read AN - CoolMOSTM 700V P7.
4)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
700
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
2.50
3
3.50
VDS=VGS,ꢀID=0.04mA
-
-
-
10
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C
VDS=700V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
µA
Gate-source leakage current incl. Zener
diode
IGSS
RDS(on)
RG
-
-
1
VGS=20V,ꢀVDS=0V
-
-
1.15
2.62
1.40
-
VGS=10V,ꢀID=0.7A,ꢀTj=25°C
VGS=10V,ꢀID=0.7A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
1.6
-
f=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
158
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
3
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
9
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
113
12
4.9
63
61
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,
RG=10.2Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,
RG=10.2Ω
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,
RG=10.2Ω
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=0.5A,
RG=10.2Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.7
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=0.5A,ꢀVGS=0ꢀtoꢀ10V
Qgd
1.7
Qg
4.7
Gate plateau voltage
Vplateau
4.3
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=0.9A,ꢀTj=25°C
Reverse recovery time
275
0.4
ns
µC
A
VR=400V,ꢀIF=0.5A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.5A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.5A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
6
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
30
102
25
20
15
10
5
10 µs
101
100 µs
1 µs
1 ms
10 ms
100
DC
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
10 µs
101
100
0.5
0.2
1 µs
100 µs
1 ms
10 ms
DC
0.1
100
0.05
10-1
10-2
10-3
0.02
0.01
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
10
7
20 V
10 V
8 V
20 V
10 V
8 V
9
6
5
4
3
2
1
0
7 V
8
7
7 V
6 V
6
5
4
3
2
1
0
6 V
5.5 V
5.5 V
5 V
5 V
4.5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
6.0
4.0
5.5 V
6 V
6.5 V 7 V
5 V
10 V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
3.5
3.0
2.5
98%
2.0
1.5
typ
1.0
0.5
0.0
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=0.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
10
10
9
9
8
7
6
8
25 °C
7
6
120 V
400 V
5
5
150 °C
4
3
2
1
0
4
3
2
1
0
0
2
4
6
8
10
12
0
2
4
6
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
102
840
25 °C
125 °C
820
800
780
760
740
720
700
680
660
640
620
600
101
100
10-1
0.0
0.5
1.0
1.5
2.0
-75 -50 -25
0
25
50
75 100 125 150 175
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
Diagramꢀ14:ꢀTyp.ꢀcapacitances
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
1.2
1.0
0.8
0.6
0.4
0.2
0.0
103
Ciss
102
101
Coss
Crss
100
10-1
0
100
200
300
400
500
0
100
200
300
400
500
600
700
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00181453
MILLIMETERS
DIM
INCHES
MIN
0.90
MAX
1.10
0.54
MIN
MAX
0.043
0.021
0.009
0.014
0
A
b
0.035
SCALE
b1
c
0.001
0.006
0.203
0.195
2.5
0.15
5.15
4.95
0.35
0
2.5
D
D1
D2
E
5.35
4.40
6.35
6.10
0.211
0.173
0.250
0.240
5mm
5.95
5.70
0.234
0.224
EUROPEAN PROJECTION
E1
E2
e
1.27
8
0.050
8
N
K1
L
0.45
0.45
ꢀꢁꢂ
0.018
0.018
ꢀꢁꢂ
ISSUE DATE
13-05-2016
M
Ĭ
ꢃꢄ
ꢃꢄ
REVISION
aaa
eee
0.25
0.08
0.010
0.003
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀThinPAKꢀ5x6ꢀSMD,ꢀdimensionsꢀinꢀmm/inchesꢀ-ꢀIndustrialꢀGrade
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSªꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2018-09-26
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPLK70R1K4P7
RevisionꢀHistory
IPLK70R1K4P7
Revision:ꢀ2018-09-26,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2018-09-26
Trademarks
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2018-09-26
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