IPD95R2K0P7 [INFINEON]
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.;
| 型号： | IPD95R2K0P7 |
| 厂家： | 
Infineon |
| 描述： | Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. |
| 文件： | 总14页 (文件大小：1124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD95R2K0P7
MOSFET
DPAK
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
tab
Features
2
1
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss
•ꢀBest-in-classꢀDPAKꢀRDS(on)
3
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2, Tab
Benefits
•ꢀBest-in-classꢀperformance
*1
Gate
Pin 1
*2
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower
ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.
AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Qg,typ
Value
950
2
Unit
V
Ω
10
4
nC
A
ID
Eoss @ 500V
VGS(th),typ
0.9
3
µJ
V
ESD class (HBM)
2
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD95R2K0P7
PG-TO252-3
95R2K0P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
4
2.4
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
10
6
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
mJ
mJ
ID=0.4A; VDD=50V; see table 10
ID=0.4A; VDD=50V; see table 10
EAR
0.08
Application (Flyback) relevant
avalanche current, single pulse3)
measured with standard leakage
inductance of transformer of 10µH
IAS
-
2.0
-
A
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
-
-
-
-
-
-
-
-
-
100
20
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
37
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current
Diode pulse current2)
IS
-
2.7
10
A
A
TC=25°C
IS,pulse
-
TC=25°C
VDS=0...400V,ꢀISD<=0.8A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt4)
dv/dt
-
-
1
V/ns
see table 8
VDS=0...400V,ꢀISD<=0.8A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
50
A/µs
see table 8
VISO
n.a.
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.5
2) Pulse width tp limited by Tj,max
3) For further explanation please read AN - CoolMOSTM 700V P7 & 950V P7
4) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.4
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
950
2.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3
3.5
VDS=VGS,ꢀID=0.08mA
-
-
-
10
1
-
VDS=950V,ꢀVGS=0V,ꢀTj=25°C
VDS=950V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
1.71
3.824
2
Ω
-
VGS=10V,ꢀID=1.7A,ꢀTj=25°C
VGS=10V,ꢀID=1.7A,ꢀTj=150°C
RDS(on)
RG
-
1
-
Ω
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
330
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
5
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
8
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
81
6
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=1.7A,
RG=23.1Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=1.7A,
RG=23.1Ω;ꢀseeꢀtableꢀ9
13
41
18
VDD=400V,ꢀVGS=13V,ꢀID=1.7A,
RG=23.1Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=1.7A,
RG=23.1Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
2
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=760V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=760V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=760V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=760V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
Qgd
3
Qg
10
Gate plateau voltage
Vplateau
4.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=1.7A,ꢀTj=25°C
VR=400V,ꢀIF=0.8A,ꢀdiF/dt=50A/µs;
see table 8
-
-
-
337
2
-
-
-
ns
VR=400V,ꢀIF=0.8A,ꢀdiF/dt=50A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=0.8A,ꢀdiF/dt=50A/µs;
see table 8
Peak reverse recovery current
9
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
40
102
101
100
1 µs
30
20
10
0
10 µs
10-1
10-2
10-3
10-4
100 µs
1 ms
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
100
1 µs
10 µs
0.5
100 µs
10-1
10-2
10-3
10-4
100
0.2
1 ms
0.1
0.05
10 ms
DC
0.02
0.01
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
8
4
20 V
10 V
8 V
7 V
20 V
10 V
6 V
6
3
8 V
5.5 V
7 V
6 V
5 V
5.5 V
4.5 V
4
2
5 V
4.5 V
2
1
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
5.500
2.5
20 V
10 V
5.000
4.500
6 V
2.0
1.5
1.0
0.5
5.5 V
4.5 V
4 V
4.000
3.500
3.000
2.500
0
1
2
3
4
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=1.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
8
12
10
6
4
2
0
25 °C
8
120 V
760 V
6
4
2
0
150 °C
0
2
4
6
8
10
12
0
3
6
9
12
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=1.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
8
6
4
2
0
101
100
125 °C
25 °C
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=0.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
1100
104
1050
1000
950
103
Ciss
102
101
Coss
900
100
Crss
850
10-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
3
2
1
0
0
100 200 300 400 500 600 700 800 900 1000
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO252-3-U02
REVISION: 01
DATE: 23.11.2021
MILLIMETERS
DIMENSIONS
MIN.
MAX.
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.50
A
A1
b
2.16
0.00
0.64
0.65
4.95
0.46
0.40
5.97
5.02
6.35
4.32
b1
b2
c
c1
D
D1
E
E1
e
2.29
4.57
3
e1
N
H
9.40
1.18
0.89
0.51
10.48
1.78
1.27
1.02
L
L1
L2
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO252-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀP7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀP7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀP7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.3,ꢀꢀ2022-01-12
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R2K0P7
RevisionꢀHistory
IPD95R2K0P7
Revision:ꢀ2022-01-12,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
Release of final version
2018-05-30
2018-06-04
2020-05-26
2022-01-12
Final
Updated package/symbol drawing, and product validation
Updated Package Outlines
Trademarks
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.3,ꢀꢀ2022-01-12
相关型号：
IPD95R450P7
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.
INFINEON
IPD95R450PFD7
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPD95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPD95R450PFD7 comes in a TO-252 DPAK package and features and an on-state resistance (RDS(on)) of 450 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
INFINEON
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