IPD65R660CFDBT [INFINEON]

Power Field-Effect Transistor;


型号：	IPD65R660CFDBT
厂家：	Infineon
描述：	Power Field-Effect Transistor 晶体晶体管
文件：	总20页 (文件大小：3943K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS CFD

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Data Sheet

Rev. 2.0, 2011-02-01

Final

Industrial & Multimarket

650V CoolMOS™ CFD Power Transistor

IPD65R660CFD IPB65R660CFD,

IPP65R660CFD IPA65R660CFD

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies. 650V CoolMOS™ CFD series

combines the experience of the leading SJ MOSFET supplier with high

class innovation. The resulting devices provide all benefits of a fast

switching SJ MOSFET while offering an extremely fast and robust body

diode. This combination of extremely low switching, commutation and

conduction losses together with highest robustness make especially

resonant switching applications more reliable, more efficient, lighter,

and cooler

drain

pin 2

Features

•

Ultra-fast body diode

Very high commutation ruggedness

gate

pin 1

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Easy to use/drive

Qualified for industrial grade applications according to JEDEC¹⁾

Pb-free plating, Halogen free mold compound

source

pin 3

Applications

650V CoolMOS™ CFD is especially suitable for resonant switching PWM

stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom.

Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem

poles is generally recommended.

Table 1

Key Performance Parameters

Parameter

Value

700

0.66

Unit

_DS@ T_j,max

R_DS(on),max



Q_g,typ

I_D,pulse

_oss@ 400V

1.8

µJ

A/µs

Body diode di/dt

500

Type / Ordering Code

IPD65R660CFD

IPB65R660CFD

IPP65R660CFD

IPA65R660CFD

IPI65R660CFD

Package

Marking

Related Links

PG-TO252

PG-TO263

PG-TO220

IFX CoolMOS Webpage

IFX Design tools

65F660

PG-TO220 FullPAK

PG-TO262

IPW65R660CFD

PG-TO247

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Maximum ratings

at T_j= 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current¹⁾

I_D

6.0

3.8

T_C= 25 °C

T_C= 100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

T_C=25 °C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

115

0.21

1.2

I_D=1.2 A,V_DD=50 V

E_AR

I_AR

dv/dt

V_GS

V/ns V_DS=0...480 V

-20

-30

static

AC (f>1 Hz)

T_C=25 °C

Power dissipation for Non FullPAK P_tot

Power dissipation for FullPAK P_tot

°C

Operating and storage temperature T_j,T_stg

Mounting torque non FullPAK

-55

150

Ncm M3 and M3.5 screws

M2.5 screws

Mounting torque FullPAK

Continuous diode forward current

Diode pulse current²⁾

Reverse diode dv/dt³⁾

I_S

6.0

T_C=25 °C

I_S,pulse

dv/dt

V/ns V_DS=0...480 V,I_SD I_D,

T_j=125 °C

Maximum diode commutation

speed³⁾

di_f/dt

500

A/µs

1) Limited by T_j,max.

2) Pulse width t_plimited by T_j,max

3) Identical low side and high side switch with identical R_G

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Thermal characteristics

Table 3

Thermal characteristics TO-220; TO-247 & TO-262

Symbol Values

Typ.

Parameter

Unit

Note /

Test Condition

Min.

Max.

2.0

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 4

Thermal characteristics TO-220FullPAK

Parameter

Symbol

Min.

Values

Unit

Note /

Test Condition

Typ.

Max.

4.5

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 5

Thermal characteristics TO-263 and TO-252

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

2.0

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

SMD version, device

on PCB, minimal

footprint

SMD version, device

on PCB, 6cm²cooling

area¹⁾

Soldering temperature,

T_sold

260

°C

reflow MSL1

wave- & reflowsoldering allowed

1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for drain connection. PCB is

vertical without air stream cooling.

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Table 6

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

650

3.5

Typ.

Max.

Drain-source breakdown voltage V_(BR)DSS

V_GS=0 V, I_D=1.0 mA

V_DS=V_GS, I_D=0.21 mA

Gate threshold voltage

V_GS(th)

I_DSS

4.5

Zero gate voltage drain current

µA

V_DS=600 V, V_GS=0 V,

T_j=25 °C

600

V_DS=600 V, V_GS=0 V,

T_j=150 °C

Gate-source leakage current

I_GSS

100

V_GS=20 V, V_DS=0 V

Drain-source on-state resistance R_DS(on)

0.59

0.66



V_GS=10 V, I_D=2.1 A,

T_j=25 °C

1.54

6.5

V_GS=10 V, I_D=2.1 A,

T_j=150 °C

Gate resistance

R_G



f=1 MHz, open drain

Table 7

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

615

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0 V, V_DS=100 V,

f=1 MHz

C_oss

C_o(er)

Effective output capacitance,

energy related¹⁾

V_GS=0 V,

V_DS=0...480 V

Effective output capacitance, time C_o(tr)

I_D=constant, V_GS=0 V

V_DS=0...480V

related²⁾

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_DD=400 V,

V_GS=13 V, I_D=3.2A,

R_G= 6.8 

Turn-off delay time

Fall time

1) C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

2) C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics

Table 8

Gate charge characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

IGate to source charge

Gate to drain charge

Gate charge total

Q_gs

3.5

V_DD=480 V, I_D=3.2 A,

V_GS=0 to 10 V

Q_gd

Q_g

Gate plateau voltage

V_plateau

6.4

Table 9

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=3.2 A,

T_j=25 °C

Reverse recovery time

t_rr

µC

V_R=400 V, I_F=3.2 A,

di_F/dt=100 A/µs

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rrm

0.20

4.5

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics diagrams

Table 10

Power dissipation

Non FullPAK

Power dissipation

FullPAK

P_tot= f(T_C)

Table 11

Max. transient thermal impedance

Non FullPAK

Max. transient thermal impedance

FullPAK

_(thJC)=f(tp); parameter: D=t_p/T

Z_(thJC)=f(tp); parameter: D=t_p/T

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics diagrams

Table 12

Safe operating area T_C=25 °C

Non FullPAK

FullPAK

I_D=f(V_DS); T_C=25 °C; V_GS> 7.5V; D=0; parameter t_p

Table 13

Safe operating area T_C=80 °C

Non FullPAK

FullPAK

I_D=f(V_DS); T_C=80 °C; V_GS> 7.5V; D=0; parameter t_p

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics diagrams

Table 14

Typ. output characteristics T_j=25 °C

Typ. output characteristics T_j=125 °C

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

I_D=f(V_DS); T_j=125 °C; parameter: V_GS

Table 15

Typ. drain-source on-state resistance

Drain-source on-state resistance

_DS(on)=f(I_D); T_j=125 °C; parameter: V_GS

R_DS(on)=f(T_j); I_D=2.1 A; V_GS=10 V

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics diagrams

Table 16

Typ. transfer characteristics

Typ. gate charge

I_D=f(V_GS); V_DS=20V

_GS=f(Q_gate), I_D=3.2 A pulsed

Table 17

Avalanche energy

Drain-source breakdown voltage

E_AS=f(T_j); I_D=1.2 A; V_DD=50 V

V_BR(DSS)=f(T_j); I_D=1.0 mA

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Electrical characteristics diagrams

Table 18

Typ. capacitances

Typ. C_ossstored energy

C=f(V_DS); V_GS=0 V; f=1 MHz

E_OSS=f(V_DS)

Table 19

Forward characteristics of reverse diode

I_F=f(V_SD); parameter: T_j

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Test circuits

Table 20

Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load

Switching time waveform

V_DS

90%

V_DS

V_GS

10%

V_GS

t_{d( off)}

t_d(on)

t_on

t_f

t_r

t_off

Table 21

Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

V_D

I_D

V_DS

I_D

Table 22

Test circuit and waveform for diode characteristics

Test circuit for diode characteristics

Diode recovery waveform

I_D

di_F/dt

t_rr

Q_rr

t_S

Q_S

t_rr

t_F

R_G1

Q_F

t_F

Ι_F

t_S

V_DS

10% Ι_RRM

di_rr/dt

R_G2

Q_S

Q_F

Ι_RRM

RRM

90% Ι_RRM

R_G1= R_G2

SIL00088

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Package outlines

Figure 1

Outlines TO-252, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Package outlines

Figure 2

Outlines TO-220, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Package outlines

Figure 3

Outlines TO-220 FullPAK, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Package outlines

Figure 4

Outlines TO-263, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Package outlines

Figure 5

Outlines TO-262, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Package outlines

TO247-3-21/-41/-44

MILLIMETERS

INCHES

MAX

DIM

MIN

4.83

2.27

1.85

1.07

1.90

2.87

0.55

20.80

16.25

0.95

15.70

13.10

3.68

1.00

MAX

5.21

2.54

2.16

1.33

2.41

2.16

3.38

3.13

0.68

21.10

17.65

1.35

16.13

14.15

5.10

2.60

MIN

0.190

0.089

0.073

0.042

0.075

0.113

0.022

0.819

0.640

0.037

0.618

0.516

0.145

0.039

0.205

0.100

0.085

0.052

0.095

0.085

0.133

0.123

0.027

0.831

0.695

0.053

0.635

0.557

0.201

0.102

DOCUMENT NO.

Z8B00003327

SCALE

7.5mm

EUROPEAN PROJECTION

5.44 (BSC)

0.214 (BSC)

øP

ISSUE DATE

09-07-2010

19.80

4.10

3.50

5.49

6.04

20.32

4.47

3.70

6.00

6.30

0.780

0.161

0.138

0.216

0.238

0.800

0.176

0.146

0.236

0.248

REVISION

Figure 6

Outlines TO-247, dimensions in mm/inches

Final Data Sheet

Rev. 2.0, 2011-02-01

650V CoolMOS™ CFD Power Transistor

IPx65R660CFD

Revision History

Revision History: 2011-02-01, Rev. 2.0

Previous Revision:

Revision Subjects (major changes since last revision)

2.0

Release of final data sheet

We Listen to Your Comments

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Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2011-02-01

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written approval

of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that

life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that

device or system. Life support devices or systems are intended to be implanted in the human body or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the

user or other persons may be endangered.

Final Data Sheet

Rev. 2.0, 2011-02-01

IPD65R660CFDBT [INFINEON]

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