IPD65R420CFDA [INFINEON]
650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。;
| 型号： | IPD65R420CFDA |
| 厂家： | 
Infineon |
| 描述： | 650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。 高压 二极管 |
| 文件： | 总13页 (文件大小：1336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD65R420CFDA
MOSFET
DPAK
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀ650VꢀCoolMOS™ꢀCFDAꢀseries
combinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhigh
classꢀinnovation.ꢀTheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSJꢀMOSFETꢀwhileꢀofferingꢀanꢀextremelyꢀfastꢀandꢀrobustꢀbody
diode.ꢀThisꢀcombinationꢀofꢀextremelyꢀlowꢀswitching,ꢀcommutationꢀand
conductionꢀlossesꢀtogetherꢀwithꢀhighestꢀrobustnessꢀmakeꢀespecially
resonantꢀswitchingꢀapplicationsꢀmoreꢀreliable,ꢀmoreꢀefficient,ꢀlighter,ꢀand
cooler.
tab
2
1
3
Features
•ꢀUltra-fastꢀbodyꢀdiode
Drain
Pin 2
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀEasyꢀtoꢀuse/drive
Gate
Pin 1
•ꢀQualifiedꢀaccordingꢀtoꢀAECꢀQ101
•ꢀGreenꢀpackageꢀ(RoHSꢀcompliant),ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀforꢀmold
compound
Source
Pin 3
Applications
650VꢀCoolMOS™ꢀCFDAꢀisꢀdesignedꢀforꢀswitchingꢀapplications.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
650
0.42
32
Unit
VDS
V
RDS(on),max
Qg,typ
Ω
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
27
2.8
µJ
A/µs
µC
ns
A
500
0.7
trr
140
8.8
Irrm
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD65R420CFDA
PG-TO 252
65F420A
-
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
8.7
5.5
27
Continuous drain current1)
IꢀD
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
Pulsed drain current2)
IꢀD‚pulse
EAS
A
TCꢀ=ꢀ25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
227
0.34
1.8
50
mJ
mJ
A
IDꢀ=ꢀ1.8A,ꢀVDDꢀ=ꢀ50V
IDꢀ=ꢀ1.8A,ꢀVDDꢀ=ꢀ50V
EAR
IꢀAR
dv/dt
VGS
V/ns VDSꢀ=ꢀ0ꢀ...ꢀ400V
-20
-30
20
V
static
30
AC (f > 1 Hz)
Power dissipation (SMD)
DPAK
Ptot
83.3
W
TCꢀ=ꢀ25°C
Operating and storage temperature
Continuous diode forward current
Diode pulse current
Tj‚Tstg
IꢀS
-40
150
8.7
27
°C
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ25°C
IꢀS‚pulse
dv/dt
dif/dt
A
Reverse diode dv/dt3)
50
V/ns
A/µs
VDSꢀ=ꢀ0ꢀ...ꢀ400V,ꢀISDꢀ≤ꢀID,
Tjꢀ=ꢀ25°C
Maximum diode commutation speed
900
1) Limited by Tj max
2) Pulse width tp limited by Tj max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀDPAK
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
1.5
K/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1) RthJA
62
K/W
SMD version, device on PCB, 6cm²
cooling area
35
Soldering temperature, wave- &
Tsold
260
°C
reflow MSL
reflowsoldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Max.
Drain-source breakdown voltage1)
Gate threshold voltage
V(BR)DSS
VGS(th)
IꢀDSS
V
VGSꢀ=ꢀ0V,ꢀIDꢀ=ꢀ1mA
4
4.5
5
V
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ0.3445mA
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ25°C
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ150°C
VGSꢀ=ꢀ20V,ꢀVDSꢀ=ꢀ0V
Zero gate voltage drain current
µA
100
Gate-source leakage current
IꢀGSS
100
nA
Drain-source on-state resistance
RDS(on)
0.378 0.42
Ω
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.4A,ꢀTjꢀ=ꢀ25°C
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.4A,ꢀTjꢀ=ꢀ150°C
fꢀ=ꢀ1MHz,ꢀopenꢀdrain
0.983
4
Gate resistance
RG
Ω
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
870
45
Max.
Input capacitance
Output capacitance
Ciss
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ100V,ꢀfꢀ=ꢀ1MHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
36
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ0ꢀ...ꢀ400V
Effective output capacitance, time
related3)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0V,
VDSꢀ=ꢀ0ꢀ...ꢀ400V
161
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
10
7
ns
ns
ns
ns
VDDꢀ=ꢀ400V,ꢀVGSꢀ=ꢀ13V,ꢀIDꢀ=ꢀ5.2A,
RGꢀ=ꢀ3.4Ω
Turn-off delay time
Fall time
38
8
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
5.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
nC
nC
nC
V
VDDꢀ=ꢀ480V,ꢀIDꢀ=ꢀ5.2A,
VGSꢀ=ꢀ0ꢀtoꢀ10V
Qgd
17.5
32
Qg
Gate plateau voltage
Vplateau
6.4
1) For applications with applied blocking voltage >65% of the specified blocking voltage, we recommend to evaluate the
impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office.
2)
C
C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
o(er)
3)
o(tr)
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
V
VGSꢀ=ꢀ0V,ꢀIFꢀ=ꢀ5.2A,ꢀTjꢀ=ꢀ25°C
Reverse recovery time
90
ns
µC
A
VRꢀ=ꢀ400V,ꢀIFꢀ=ꢀ5.2A,
diF/dtꢀ=ꢀ100A/µs
(see table 8)
Reverse recovery charge
Peak reverse recovery current
Qrr
Iꢀrrm
0.3
6.2
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Powerꢀdissipation
Max.ꢀtransientꢀthermalꢀimpedance
90
101
0.5
80
70
60
50
40
30
20
10
0
0.2
0.1
0.05
100
0.02
0.01
single pulse
10-1
10-2
0
40
80
120
160
10-5
10-4
10-3
10-2
10-1
TCꢀ[°C]
tpꢀ[s]
Ptot=f(TC)
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Safeꢀoperatingꢀarea
Safeꢀoperatingꢀarea
102
102
1 µs
10 µs
100 µs
1 ms
1 µs
10 µs
101
101
100 µs
10 ms
10 ms
1 ms
100
100
10-1
10-1
10-2
100
10-2
101
102
103
100
101
102
103
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0ꢀ;ꢀforꢀVgs>7.5V;ꢀparameter:ꢀtp
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀforꢀVgs>7.5V;ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
Typ.ꢀoutputꢀcharacteristics
Typ.ꢀoutputꢀcharacteristics
35
20
20 V
20 V
18
10 V
10 V
30
8 V
8 V
16
7 V
7 V
25
14
6 V
6 V
12
5.5 V
5.5 V
20
5 V
5 V
10
4.5 V
4.5 V
15
10
5
8
6
4
2
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
2.0
1.2
typ
1.8
1.6
1.0
0.8
0.6
0.4
0.2
0.0
5.5 V
6.5 V
1.4
1.2
1.0
0.8
0.6
0.4
10 V
5 V
6 V
7 V
0.5
6.5
12.5
18.5
24.5
-40
0
40
80
120
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=18.1ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
Typ.ꢀtransferꢀcharacteristics
Typ.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
30
102
150 °C
125 °C
25 °C
25 °C
25
20
15
10
5
101
100
0
10-1
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
VGSꢀ[V]
VSDꢀ[V]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
IF=f(VSD);ꢀparameter:ꢀTj
Typ.ꢀgateꢀcharge
Drain-sourceꢀbreakdownꢀvoltage
10
760
120 V
740
720
700
680
660
640
620
600
580
560
540
9
480 V
8
7
6
5
4
3
2
1
0
0
10
20
30
40
-40
0
40
80
120
Qgateꢀ[nC]
Tjꢀ[°C]
VGS=f(Qgate);ꢀID=5.1ꢀAꢀpulsed;ꢀparameter:ꢀVDD
VBR(DSS)=f(Tj);ꢀID=0.25ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
Avalancheꢀenergy
Typ.ꢀcapacitances
250
104
Ciss
Coss
Crss
200
150
100
50
103
102
101
100
0
25
75
125
0
100
200
300
400
500
600
Tjꢀ[°C]
VDSꢀ[V]
EAS=f(Tj);ꢀID=1.8ꢀA;ꢀVDD=50ꢀV
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Typ.ꢀCossꢀstoredꢀenergy
6
5
4
3
2
1
0
0
100
200
300
400
500
600
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
Rg1
VDS(peak)
VDS
VDS
IF
trr
VDS
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2016-06-10
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPD65R420CFDA
RevisionꢀHistory
IPD65R420CFDA
Revision:ꢀ2016-06-10,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
Preliminary
2.0
2.1
2.2
2.3
2012-07-12
2015-02-11
2015-09-21
2016-06-10
Correction of Marking Code
Correction of I d pulse on Table 1 Key performance parameter
Updated: SOA diagrams, Mounting torque.
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
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Dueꢀtoꢀtechnicalꢀrequirementsꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀplease
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Ifꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.3,ꢀꢀ2016-06-10
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