IPD25CN10N G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | IPD25CN10N G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总12页 (文件大小：1032K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-Transistor
Product Summary
Features
VDS
100
25
V
• N-channel, normal level
RDS(on),max (TO252)
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
35
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
Package
Marking
PG-TO263-3
26CN10N
PG-TO252-3
25CN10N
PG-TO262-3
26CN10N
PG-TO220-3
26CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
35
25
A
Pulsed drain current2)
I D,pulse
E AS
140
65
I D=35 A, R GS=25 W
Avalanche energy, single pulse
mJ
I D=35 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage3)
V GS
±20
71
V
P tot
T C=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) see figure 3
3)
T
=150°C and duty cycle D=0.01 for Vgs<-5V
jmax
Rev. 1.09
page 1
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
-
-
-
-
2.1
62
40
75
50
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
minimal footprint
Thermal resistance, junction -
ambient (TO252, TO251)
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=39 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
3
4
V DS=80 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
0.1
1
µA
V DS=80 V, V GS=0 V,
T j=125 °C
-
-
-
10
1
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=35 A,
(TO252)
R DS(on)
Drain-source on-state resistance
19
25
25
26
mW
V GS=10 V, I D=35 A,
(TO251)
-
-
19
20
V GS=10 V, I D=35 A,
(TO263)
V GS=10 V, I D=35 A,
(TO220, TO262)
-
-
20
1.1
38
26
-
R G
g fs
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=35 A
,
Transconductance
19
-
S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.09
page 2
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1560
232
16
10
4
2070 pF
309
V GS=0 V, V DS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
24
15
6
ns
V DD=50 V, V GS=10 V,
I D=35 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
13
3
19
4
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
9
6
12
8
nC
Q gd
V DD=50 V, I D=35 A,
V GS=0 to 10 V
Q sw
Q g
10
23
5.6
24
14
31
-
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=50 V, V GS=0 V
32
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
35
A
T C=25 °C
I S,pulse
140
V GS=0 V, I F=35 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
-
V
t rr
Reverse recovery time
-
-
85
ns
V R=50 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
165
nC
5) See figure 16 for gate charge parameter definition
Rev. 1.09
page 3
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
70
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
1 µs
10 µs
102
101
100
10-1
100 µs
1 ms
0.5
1
0.2
10 ms
0.1
DC
0.05
0.02
0.1
0.01
10-1
100
101
102
103
VDS [V]
tp [s]
single pulse
Rev. 1.09
page 4
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
100
60
8 V
7 V
10 V
5 V
5.5 V
6 V
50
40
30
20
10
0
80
6.5 V
60
40
20
0
6.5 V
6 V
7 V
8 V
10 V
5.5 V
5 V
4.5 V
0
1
2
3
4
5
0
10
20
30
40
50
60
70
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
60
40
20
0
40
35
30
25
20
15
10
5
175 °C
25 °C
0
0
2
4
6
8
0
10
20
30
VGS [V]
ID [A]
Rev. 1.09
page 5
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=35 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
60
4
3.5
3
390 µA
40
39 µA
2.5
2
98 %
0
typ
1.5
1
20
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
Tj [°C]
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
25 °C
Coss
100
175 °C
175 °C, 98%
102
25 °C, 98%
Crss
10
101
100
1
0
0
20
40
60
80
0.5
1
1.5
2
VDS [V]
VSD [V]
Rev. 1.09
page 6
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=35 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
50 V
80 V
20 V
25 °C
100 °C
10
6
150 °C
4
2
1
0
1
10
100
1000
0
5
10
15
20
25
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
115
110
105
100
95
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
90
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.09
page 7
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
PG-TO220-3: Outline
Rev. 1.09
page 8
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.09
page 9
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
PG-TO262-3-1 (I²PAK)
Rev. 1.09
page 10
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
PG-TO252-3: Outline
Rev. 1.09
page 11
2013-07-09
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.09
page 12
2013-07-09
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