IPD135N03L G [INFINEON]
极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6）;
| 型号： | IPD135N03L G |
| 厂家： | 
Infineon |
| 描述： | 极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6） 通信 电池 栅 数据通信 服务器 电脑 栅极 调节器 |
| 文件： | 总11页 (文件大小：989K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD135N03LꢀG
MOSFET
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
DPAK
tab
Features
•ꢀFastꢀswitchingꢀMOSFETꢀforꢀSMPS
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
2
1
•ꢀAvalancheꢀrated
3
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Pin 1
VDS
30
V
Source
Pin 3
RDS(on),max
ID
13.5
30
mΩ
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD135N03L G
PG-TO252-3
135N03L
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
30
26
30
21
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current1)
Avalanche current, single pulse2)
ID,pulse
IAS
-
-
-
-
-
-
210
30
A
TC=25ꢀ°C
A
TC=25ꢀ°C
Avalanche energy, single pulse
EAS
20
mJ
ID=10ꢀA,ꢀRGS=25ꢀΩ
ID=30ꢀA,ꢀVDS=24ꢀV,ꢀdi/dt=200ꢀA/µs,
Tj,max=175ꢀ°C
Reverseꢀdiodeꢀdv/dt
dv/dt
-
-
6
kV/µs
Gate source voltage
Power dissipation
VGS
Ptot
-20
-
-
-
20
31
V
-
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
4.9
K/W
K/W
-
-
SMD version, device on PCB,
minimal footprint
-
-
-
-
75
50
SMD version, device on PCB,
6 cm² cooling area3)
RthJA
K/W
-
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
30
1
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance1)
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
16.4
11.3
20.5
13.5
VGS=4.5ꢀV,ꢀID=20ꢀA
VGS=10ꢀV,ꢀID=30ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.2
43
-
-
Ω
-
Transconductance
22
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
770
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance2)
Output capacitance2)
Ciss
Coss
Crss
-
-
-
1000 pF
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
350
470
-
pF
pF
Reverse transfer capacitance
16
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-on delay time
td(on)
-
3.0
-
ns
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Rise time
tr
-
-
-
3.0
12
-
-
-
ns
ns
ns
Turn-off delay time
Fall time
td(off)
tf
-
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
2.2
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics3)ꢀ
Values
Typ.
2.7
1.2
1.2
2.6
4.8
3.5
10
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
-
-
Qsw
-
Gate charge total2)
Qg
6.4
Gate plateau voltage
Vplateau
Qg
-
Gate charge total
-
-
Gate charge total, sync. FET2)
Output charge
Qg(sync)
Qoss
4.2
9
5.5
-
nC
-
VDD=15ꢀV,ꢀVGS=0ꢀV
1) Measured from drain tab to source pin
2) Defined by design. Not subject to production test
3) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
25
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
210
1.2
10
A
TC=25ꢀ°C
Diode forward voltage
Reverse recovery charge1)
0.98
-
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
nC
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
35
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
100 ns
1 µs
0.5
102
0.2
10 µs
100
0.1
100 µs
0.05
0.02
0.01
DC
101
1 ms
10-1
single pulse
100
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
120
30
5 V
100
80
60
40
20
0
25
10 V
3.5 V
4 V
20
4.5 V
5 V
4.5 V
15
10
5
10 V
4 V
11.5 V
3.5 V
3.2 V
3 V
2.8 V
0
0
1
2
3
0
20
40
60
80
100
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
100
80
80
60
40
60
40
20
0
20
175 °C
25 °C
0
0
1
2
3
4
5
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
25
2.5
20
2.0
1.5
1.0
0.5
0.0
98 %
15
10
5
typ
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
103
102
101
100
Ciss
102
101
100
Coss
Crss
0
10
20
30
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
15 V
24 V
6 V
10
8
101
6
100 °C
25 °C
150 °C
4
2
100
10-1
0
100
101
102
103
0
4
8
12
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
34
32
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSION
MIN.
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX.
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.50
DOCUMENT NO.
Z8B00003328
A
A1
b
REVISION
07
b2
b3
c
SCALE:
10:1
c2
D
2mm
0
1
D1
E
EUROPEAN PROJECTION
E1
e
2.29
4.57
3
e1
N
H
9.40
1.18
0.89
0.51
10.48
1.78
1.27
1.02
L
ISSUE DATE
01.04.2020
L3
L4
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO252-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2020-09-14
OptiMOSªꢀ3ꢀPower-Transistor,ꢀ30ꢀV
IPD135N03LꢀG
RevisionꢀHistory
IPD135N03L G
Revision:ꢀ2020-09-14,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update POD
2.2
2020-09-14
Trademarks
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2020-09-14
相关型号：
IPD135N03LGATMA1
Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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IPD135N03LGHF
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IPD135N08N3GBTMA1
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