IPC028N03L3 [INFINEON]
英飞凌凭借全新的 OptiMOS™ 30V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，从而延长电池寿命;
| 型号： | IPC028N03L3 |
| 厂家： | 
Infineon |
| 描述： | 英飞凌凭借全新的 OptiMOS™ 30V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，从而延长电池寿命 电池 电脑 |
| 文件： | 总3页 (文件大小：627K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPC028N03L3
MOSFET
PowerꢀMOSꢀTransistorꢀChip
OptiMOSª3ꢀPowerꢀMOSꢀTransistorꢀChip
•ꢀN-channelꢀenhancementꢀmode
•ꢀForꢀdynamicꢀcharacterizationꢀreferꢀtoꢀtheꢀdatasheetꢀofꢀIPD060N03LꢀG
•ꢀAQLꢀ0.65ꢀforꢀvisualꢀinspectionꢀaccordingꢀtoꢀfailureꢀcatalogue
•ꢀElectrostaticꢀDischargeꢀSensitiveꢀDeviceꢀaccordingꢀtoꢀMIL-STDꢀ883C
•ꢀDieꢀbond:ꢀsolderedꢀorꢀglued
•ꢀBacksideꢀmetallization:ꢀNiVꢀsystem
•ꢀFrontsideꢀmetallization:ꢀAlCuꢀsystem
•ꢀPassivation:ꢀnitrideꢀ+ꢀimide
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Drain
V(BR)DSS
30
V
RDS(on)
6.01)
mΩ
mm2
µm
Gate
Die size
Thickness
2.26 x 1.24
175
Source
Typeꢀ/ꢀOrderingꢀCode
Package
Chip
Marking
RelatedꢀLinks
IPC028N03L3
not defined
-
1ꢀꢀꢀꢀꢀElectricalꢀCharacteristicsꢀonꢀWaferꢀLevel
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀ
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
IDSS
30
1
-
V
VGS=0ꢀVꢀ,ID=1ꢀmA
VDS=VGS,ꢀID=250ꢀµA
VGS=0ꢀVꢀ,VDS=30ꢀV
VGS=20ꢀVꢀ,VDS=0ꢀV
-
2.2
2
V
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
0.1
µA
nA
IGSS
-
10
52)
100
503)
1.1
RDS(on)
VSD
-
mΩ VGS=10ꢀVꢀ,ID=2.0ꢀA
V VGS=0ꢀVꢀ,IF=1A
-
0.86
1) packaged in a PG-TO252-3 (see ref. product)
2)ꢀtypicalꢀbareꢀdieꢀRDS(on);ꢀVGS=10ꢀV,ꢀwhenꢀusedꢀwithꢀ1x500µmꢀAl-wedge
3) limited by wafer test-equipment
Final Data Sheet
1
Rev.ꢀ2.6,ꢀꢀ2017-08-25
OptiMOSª3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC028N03L3
2ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀChip,ꢀdimensionsꢀinꢀµm
Final Data Sheet
2
Rev.ꢀ2.6,ꢀꢀ2017-08-25
OptiMOSª3ꢀPowerꢀMOSꢀTransistorꢀChip
IPC028N03L3
RevisionꢀHistory
IPC028N03L3
Revision:ꢀ2017-08-25,ꢀRev.ꢀ2.6
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of Final Version
2.5
2.6
2014-07-23
2017-08-25
Update Typ Rds(on)
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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81726ꢀMünchen,ꢀGermany
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
3
Rev.ꢀ2.6,ꢀꢀ2017-08-25
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