IPB80R290C3A [INFINEON]
The CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.;
| 型号： | IPB80R290C3A |
| 厂家： | 
Infineon |
| 描述： | The CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV. |
| 文件： | 总10页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB80R290C3A
CoolMOS® Power Transistor
Product Summary
VDS
800
0.29
91
V
R DS(on)max
Q g,typ
Ω
nC
Features
• New revolutionary high voltage technology
• Ultra low gate charge and ultra low effective capacitances
• Extreme dv/dt rated
PG-TO263-3-2
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS C3A designed for:
• DC/DC converters for Automotive Applications
Type
Package
Marking
IPB80R290C3A
PG-TO263-3-2 8R290C3A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
17
11
Continuous drain current
A
Pulsed drain current1)
51
I D,pulse
EAS
EAR
I AR
I D=3.4 A, VDD=50 V
I D=17 A, VDD=50 V
Avalanche energy, single pulse
670
mJ
1),2)
1),2)
0.5
Avalanche energy, repetitive t AR
17
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0…640 V
50
dv /dt
VGS
Ptot
V/ns
V
±20
static
T C=25 °C
227
Power dissipation
W
T j
-40 ... 150
-40 ... 150
Operating temperature
Storage temperature
°C
T stg
Rev. 2.0
page 1
2009-03-24
IPB80R290C3A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
17
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
A
T C=25 °C
I S,pulse
51
dv /dt
4
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
0.55 K/W
62
SMD version, device
R thJA
on PCB, minimal
footprint
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area4)
-
-
35
-
-
Soldering temperature, reflow
soldering
T sold
MSL1; 10s
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D=250 µA
DS=VGS, I D=1.0 mA
Drain-source breakdown voltage
Gate threshold voltage
800
2.1
-
-
V
3
3.9
V
DS=800 V, VGS=0 V,
I DSS
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
-
-
-
-
-
25
µA
T j=25 °C
I GSS
V
V
GS=20 V, VDS=0 V
GS=10 V, I D=11 A,
100 nA
R DS(on)
0.25
0.29
Ω
T j=25 °C
V
GS=10 V, I D=11 A,
-
-
0.67
0.85
-
-
T j=150 °C
R G
Gate resistance
Rev. 2.0
f =1 MHz, open drain
Ω
page 2
2009-03-24
IPB80R290C3A
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
2300
94
-
-
pF
V
GS=0 V, VDS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
72
-
-
V
GS=0 V, VDS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
210
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
25
15
72
12
-
-
-
-
ns
V
V
DD=400 V,
GS=0/10 V, I D=17 A,
R G=4.7 Ω,
T j = 125°C
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
12
45
88
5.5
-
nC
Q gd
-
117
-
V
V
DD=640 V, I D=17 A,
GS=0 to 10 V
Q g
Vplateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=I S,
VSD
Diode forward voltage
-
1
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
550
15
-
-
-
ns
µC
A
VR=400 V, I F=I S,
diF/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) Pulse width t p limited by T j,max
51
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) I SD≤I D, di /dt ≤200A/µs, V DClink = 400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch
4)
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer, 70µm
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2009-03-24
IPB80R290C3A
1 Power dissipation
2 Safe operating area
I D=f(VDS); T C=25 °C; D =0
parameter: t p
Ptot=f(T C)
102
240
200
160
120
80
limited by on-state
resistance
1 µs
10 µs
101
100 µs
1 ms
10 ms
DC
100
40
10-1
0
1
10
100
1000
0
25
50
75
100
125
150
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
thJC=f(t P)
4 Typ. output characteristics
I D=f(VDS); T j=25 °C
Z
parameter: D=tp/T
parameter: VGS
100
60
50
40
30
20
10
0
20 V
10 V
0.5
0.2
10-1
0.1
6.5 V
6 V
0.05
0.02
0.01
5.5 V
5 V
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
25
t p [s]
V
DS [V]
Rev. 2.0
page 4
2009-03-24
IPB80R290C3A
5 Typ. output characteristics
I D=f(VDS); T j=150 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: VGS
35
30
25
20
1.4
20 V
1.3
1.2
1.1
1
10 V
6 V
5.5 V
15
5 V
10
4.5 V
5
0.9
4.5 V
5 V
4 V
6.5 V
6 V
0.8
0.7
10 V
20 V
0
0
5
10
V
15
DS [V]
20
25
0
5
10
D [A]
15
20
I
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(VGS); |VDS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=11 A; VGS=10 V
0.8
60
50
40
30
20
10
0
25 °C
0.6
0.4
150 °C
typ
0.2
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.0
page 5
2009-03-24
IPB80R290C3A
9 Typ. gate charge
GS=f(Q gate); I D=17 A pulsed
10 Forward characteristics of reverse diode
I F=f(VSD
V
)
parameter: VDD
parameter: T j
102
10
8
6
4
2
160 V
25 °C
640 V
101
150 °C
100
10-1
0
0
0
0.5
1
1.5
2
20
40
60
80
100
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=3.4 A; VDD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
700
600
500
400
300
200
100
0
960
920
880
840
800
760
720
680
25
50
75
100
125
150
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 2.0
page 6
2009-03-24
IPB80R290C3A
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(VDS); VGS=0 V; f =1 MHz
Eoss=f(V DS)
104
18
16
14
12
10
8
Ciss
103
Coss
102
6
101
4
Crss
2
100
0
0
0
100
200
300
DS [V]
400
500
100 200 300 400 500 600 700 800
V
V DS [V]
Rev. 2.0
page 7
2009-03-24
IPB80R290C3A
Definition of diode switching characteristics
Rev. 2.0
page 8
2009-03-24
IPB80R290C3A
PG-TO263-3-2: Outlines
Rev. 2.0
page 9
2009-03-24
IPB80R290C3A
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 2.0
page 10
2009-03-24
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