IPB032N10N5 [INFINEON]
英飞凌的OptiMOS™5 100V功率MOSFET IPB032N10N5专为通信模块中的同步整流而设计，包括Or-ing，hotswap和电池保护以及服务器电源应用。与同类器件相比，该器件的R DS（on）降低22％，出色的FOM带来的贡献便是低导通电阻，它提供了高水平的功率密度和效率。;
| 型号： | IPB032N10N5 |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的OptiMOS™5 100V功率MOSFET IPB032N10N5专为通信模块中的同步整流而设计，包括Or-ing，hotswap和电池保护以及服务器电源应用。与同类器件相比，该器件的R DS（on）降低22％，出色的FOM带来的贡献便是低导通电阻，它提供了高水平的功率密度和效率。 通信 电池 服务器 |
| 文件： | 总11页 (文件大小：1096K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB032N10N5
MOSFET
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
D²-PAKꢀ7pin
Features
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀꢀRDS(on)
tab
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
1
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
7
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 4, tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
100
3.2
Unit
VDS
V
Gate
Pin 1
RDS(on),max
ID
mΩ
A
Source
Pin 2,3,5,6,7
166
98
Qoss
nC
nC
QG(0V..10V)
76
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB032N10N5
PG-TO263-7
032N10N5
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
166
118
TC=25ꢀ°C
A
Continuous drain current
ID
TC=100ꢀ°C
Pulsed drain current1)
Avalanche energy, single pulse
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
664
233
20
A
TC=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
187
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.8
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
-
-
-
-
62
Thermal resistance, junction - ambient,
6 cm2 cooling area2)
RthJA
Tsold
40
K/W
°C
-
Soldering temperature and
reflow soldering is allowed
260
reflow MSL1
1) see Diagram 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.0
3.8
VDS=VGS,ꢀID=125ꢀµA
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
2.8
3.4
3.2
4.2
VGS=10ꢀV,ꢀID=83ꢀA
VGS=6ꢀV,ꢀID=42ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.3
2
-
Ω
-
84
168
S
|VDS|>2|ID|RDS(on)max,ꢀID=83ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
5360 6970 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
Output capacitance
829
37
1078 pF
Reverse transfer capacitance
65
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=83ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
16.2
9.7
35
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=83ꢀA,
RG,ext=1.6ꢀΩ
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=83ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=83ꢀA,
RG,ext=1.6ꢀΩ
9.8
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
25
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=83ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=83ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=83ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=83ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=83ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀVGS=0ꢀV
Qgd
16
23
-
Qsw
Qg
25
76
95
-
Vplateau
Qoss
4.7
98
130
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
156
624
1.2
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.9
62
V
VGS=0ꢀV,ꢀIF=83ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=83,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=83,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
124
206
ns
nC
Qrr
103
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
200
200
180
160
140
120
100
80
160
120
80
40
0
60
40
20
0
0
25
50
75
100
125
150
175
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
10 µs
100 µs
0.5
0.2
102
101
100
10-1
1 ms
10 ms
DC
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
700
6
10 V
8 V
600
5
5 V
5.5 V
500
6 V
6 V
4
400
8 V
300
3
2
1
5.5 V
10 V
200
5 V
100
4.5 V
0
0
1
2
3
4
5
0
100
200
300
400
500
600
700
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
500
240
450
400
350
300
250
200
150
100
200
160
120
80
40
175 °C
25 °C
50
0
0
0
2
4
6
8
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
7
4.0
3.5
6
5
1250 µA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
125 µA
4
max
3
typ
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=83ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
103
25 °C
175 °C
25 °C, max
175 °C, max
104
103
102
101
Ciss
102
101
100
Coss
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
50 V
8
6
4
2
0
102
80 V
20 V
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
10
20
30
40
50
60
70
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate),ꢀID=83ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
110
105
100
95
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2016-12-12
OptiMOSªꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPB032N10N5
RevisionꢀHistory
IPB032N10N5
Revision:ꢀ2016-12-12,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-12-12
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2016-12-12
相关型号：
IPB033N10N5LF
OptiMOS™线性FET是一种全新方法，实现了增强型MOSFET饱和区域内的导通电阻（R DS（on） ）和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS（on）以及经典平面MOSFET的宽安全工作区。
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IPB034N06L3GATMA1
Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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IPB034N06L3GXT
Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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IPB034N06N3GATMA1
Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7
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IPB036N12N3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
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IPB036N12N3GATMA1
Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
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IPB037N06N3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
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