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IPAN60R180P7S [INFINEON]

600V CoolMOS™ P7 超结 (SJ) MOSFET 是600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G)，确保高效率。;
IPAN60R180P7S
型号： IPAN60R180P7S
厂家： Infineon    Infineon
描述：

600V CoolMOS™ P7 超结 (SJ) MOSFET 是600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G)，确保高效率。

栅 栅极
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IPAN60R180P7S  
MOSFET  
PG-TOꢀ220ꢀFP  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
TheꢀCoolMOS™ꢀ7thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor  
highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction  
(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V  
CoolMOS™ꢀP7ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀP6ꢀseries.ꢀIt  
combinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellentꢀease  
ofꢀuse,ꢀe.g.ꢀveryꢀlowꢀringingꢀtendency,ꢀoutstandingꢀrobustnessꢀofꢀbody  
diodeꢀagainstꢀhardꢀcommutationꢀandꢀexcellentꢀESDꢀcapability.  
Furthermore,ꢀextremelyꢀlowꢀswitchingꢀandꢀconductionꢀlossesꢀmake  
switchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompactꢀandꢀmuch  
cooler.  
Features  
Drain  
Pin 2  
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀLLC)ꢀdueꢀtoꢀanꢀoutstanding  
ꢀꢁcommutationꢀruggedness  
•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses  
•ꢀExcellentꢀESDꢀrobustnessꢀ>2kVꢀ(HBM)ꢀforꢀallꢀproducts  
•ꢀBetterꢀRDS(on)/packageꢀproductsꢀcomparedꢀtoꢀcompetitionꢀenabledꢀbyꢀa  
ꢀꢁlowꢀRDS(on)*Aꢀ(belowꢀ1Ohm*mm²)  
Gate  
Pin 1  
Source  
Pin 3  
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard  
Benefits  
•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage  
ꢀꢁacrossꢀPFCꢀandꢀPWMꢀstages  
•ꢀSimplifiedꢀthermalꢀmanagementꢀdueꢀtoꢀlowꢀswitchingꢀandꢀconduction  
ꢀꢁlosses  
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith  
ꢀꢁsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀtoꢀ>2ꢀkVꢀESD  
ꢀꢁprotection  
•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges  
Potentialꢀapplications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀꢀꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
650  
180  
25  
Unit  
V
mΩ  
nC  
A
Qg,typ  
ID,pulse  
53  
Eoss @ 400V  
Body diode diF/dt  
2.9  
µJ  
900  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
PG-TO 220 FullPAK -  
Narrow Lead  
IPAN60R180P7S  
60S180P7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
18  
11  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
53  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
56  
mJ  
mJ  
A
ID=4.0A; VDD=50V; see table 10  
-
0.28  
4.0  
80  
ID=4.0A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
20  
V
static;  
30  
V
AC (f>1 Hz)  
26  
W
°C  
°C  
TC=25°C  
Storage temperature  
-40  
-40  
-
150  
150  
50  
-
-
Operating junction temperature  
Mounting torque  
-
Ncm M2.5 screws  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
18  
A
A
TC=25°C  
TC=25°C  
IS,pulse  
-
53  
VDS=0...400V,ꢀISD<=18A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
-
-
50  
V/ns  
VDS=0...400V,ꢀISD<=18A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
Insulation withstand voltage  
diF/dt  
-
-
-
-
900  
A/µs  
VISO  
2500  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent  
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch with identical RG  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
4.85  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W -  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
3.5  
4
VDS=VGS,ꢀID=0.28mA  
-
-
-
10  
1
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C  
VDS=600V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
IGSS  
-
-
1000 nA  
VGS=20V,ꢀVDS=0V  
-
-
0.145 0.180  
0.340  
VGS=10V,ꢀID=5.6A,ꢀTj=25°C  
VGS=10V,ꢀID=5.6A,ꢀTj=150°C  
RDS(on)  
RG  
Ω
Ω
-
-
11  
-
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1081  
19  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
36  
381  
14  
12  
85  
8
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,  
RG=10.0Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,  
RG=10.0Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,  
RG=10.0Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13V,ꢀID=5.6A,  
RG=10.0Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
6
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=5.6A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
8
Qg  
25  
Gate plateau voltage  
Vplateau  
5.2  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=5.6A,ꢀTj=25°C  
VR=400V,ꢀIF=2A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
175  
1.3  
15  
-
-
-
ns  
VR=400V,ꢀIF=2A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=2A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
30  
102  
1 µs  
10 µs  
100 µs  
1 ms  
101  
100  
25  
20  
15  
10  
5
10-1  
10 ms  
10-2  
DC  
10-3  
10-4  
10-5  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
101  
100  
1 µs  
10 µs  
100 µs  
1 ms  
0.5  
0.2  
100  
0.1  
10-1  
10-2  
10 ms  
0.05  
0.02  
DC  
0.01  
10-1  
10-3  
10-4  
10-5  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
70  
50  
20 V  
20 V  
10 V  
60  
40  
30  
10 V  
8 V  
50  
7 V  
8 V  
7 V  
40  
30  
6 V  
20  
10  
0
5.5 V  
6 V  
20  
5 V  
5.5 V  
10  
4.5 V  
5 V  
4.5 V  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.700  
3.000  
5.5 V  
6 V  
2.500  
2.000  
1.500  
1.000  
0.500  
0.000  
6.5 V  
7 V  
10 V  
0.500  
20 V  
0.300  
0
10  
20  
30  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=5.6ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
80  
12  
10  
8
25 °C  
60  
120 V  
400 V  
150 °C  
40  
6
4
20  
2
0
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
30  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=5.6ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
60  
50  
40  
30  
20  
10  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=4.0ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
690  
680  
670  
660  
650  
640  
630  
620  
610  
600  
590  
580  
570  
560  
550  
540  
105  
104  
Ciss  
103  
Coss  
102  
101  
Crss  
100  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600VꢀCoolMOS™ꢀP7ꢀPowerꢀTransistor  
IPAN60R180P7S  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSIONS  
DOCUMENT NO.  
Z8B00180155  
MIN.  
4.60  
2.60  
2.47  
0.56  
1.01  
0.46  
15.90  
9.58  
10.40  
MAX.  
4.80  
2.80  
2.67  
0.69  
1.15  
0.59  
16.10  
9.78  
10.60  
A
A1  
A2  
b
REVISION  
04  
SCALE 5:1  
b1  
c
5mm  
0
1
2
3
4
D
D1  
E
EUROPEAN PROJECTION  
e
2.54  
3
N
L
13.45  
1.70  
3.00  
3.25  
13.75  
1.90  
3.20  
3.45  
L1  
øP  
Q
ISSUE DATE  
07.11.2016  
Figure 1 Outline PG-TO 220 FullPAK - Narrow Lead, dimensions in mm  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2018-07-09  
600V CoolMOS™ P7 Power Transistor  
IPAN60R180P7S  
7
Appendix A  
Table 11 Related Links  
• IFX CoolMOS P7 Webpage: www.infineon.com  
• IFX CoolMOS P7 application note: www.infineon.com  
• IFX CoolMOS P7 simulation model: www.infineon.com  
• IFX Design tools: www.infineon.com  
Final Data Sheet  
13  
Rev. 2.0, 2018-07-09  
600V CoolMOS™ P7 Power Transistor  
IPAN60R180P7S  
Revision History  
IPAN60R180P7S  
Revision: 2018-07-09, Rev. 2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2018-07-09  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously  
improve the quality of this document. Please send your proposal (including a reference to this document) to:  
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Published by  
Infineon Technologies AG  
81726 München, Germany  
© 2018 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics  
(“Beschaffenheitsgarantie”) .  
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the  
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation  
warranties of non-infringement of intellectual property rights of any third party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this  
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product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s  
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Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon  
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Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or  
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a  
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and  
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Final Data Sheet  
14  
Rev. 2.0, 2018-07-09  

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