IPA040N06N [INFINEON]
OptiMOS ™ 5 60V 针对交换模式电源 (SMPS)中的同步整流进行了优化，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件是电机控制、太阳能微逆变器和快速开关 直流-直流转换器等广泛工业应用的绝佳选择。;
| 型号： | IPA040N06N |
| 厂家： | 
Infineon |
| 描述： | OptiMOS ™ 5 60V 针对交换模式电源 (SMPS)中的同步整流进行了优化，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件是电机控制、太阳能微逆变器和快速开关 直流-直流转换器等广泛工业应用的绝佳选择。 开关 电机 服务器 电脑 转换器 |
| 文件： | 总11页 (文件大小：1328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOSTM
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
TO-220-FP
1ꢀꢀꢀꢀꢀDescription
Features
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 2
Parameter
Value
Unit
VDS
60
V
Gate
Pin 1
RDS(on),max
ID
4.0
69
mΩ
A
Source
Pin 3
QOSS
44
nC
nC
QG(0V..10V)
38
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPA040N06N
PG-TO220-FP
040N06N
-
1) J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
69
48
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
276
77
A
TC=25ꢀ°C
-
mJ
V
ID=69ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
20
-
Power dissipation
36
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
3.1
Parameter
Symbol
RthJC
Unit Noteꢀ/ꢀTestꢀCondition
K/W
Min.
Max.
Thermal resistance, junction - case
-
4.2
-
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=50ꢀµA
2.1
2.8
3.3
-
-
0.1
10
1
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
3.6
4.7
4.0
5.0
VGS=10ꢀV,ꢀID=69ꢀA
VGS=6ꢀV,ꢀID=18ꢀA
RDS(on)
mΩ
Gate resistance3)
Transconductance
RG
gfs
-
1.3
1.95
-
Ω
-
55
110
S
|VDS|>2|ID|RDS(on)max,ꢀID=69ꢀA
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Defined by design. Not subject to production test
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
2700 3375 pF
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
Output capacitance
670
28
838
56
pF
pF
Reverse transfer capacitance
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=69ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
14
16
33
8
-
-
-
-
ns
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=69ꢀA,
RG,ext=3ꢀΩ
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=69ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=69ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
13
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
8
-
7
9
-
Qsw
13
Gate charge total
Qg
38
44
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
4.8
33
-
nC
nC
44
55
VDD=30ꢀV,ꢀVGS=0ꢀV
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
30
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
276
1.2
53
A
TC=25ꢀ°C
Diode forward voltage
0.88
33
28
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=30ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=30ꢀV,ꢀIF=30ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
-
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
80
60
40
20
0
30
20
10
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
0.5
102
101
100
10-1
100
0.2
100 µs
0.1
1 ms
0.05
0.02
10 ms
10-1
0.01
DC
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
280
8
5 V
5.5 V
10 V
7
7 V
240
6 V
6 V
6
200
160
120
80
5
7 V
4
5.5 V
10 V
3
2
1
0
5 V
40
0
0.0
0.5
1.0
1.5
2.0
0
40
80
120
160
200
240
280
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
280
160
240
200
160
120
80
120
80
40
0
40
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
8
5
7
6
4
max
5
3
500 µA
typ
4
3
2
1
0
50 µA
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=69ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
Ciss
103
102
101
102
101
100
Coss
Crss
0
20
40
60
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
10
8
30 V
48 V
12 V
25 °C
100 °C
150 °C
101
6
4
2
100
0
100
101
102
103
0
10
20
30
40
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=69ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
70
66
62
58
54
50
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-FP,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2014-06-19
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
IPA040N06N
RevisionꢀHistory
IPA040N06N
Revision:ꢀ2014-06-19,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Rev.2.1
2014-06-19
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2014-06-19
相关型号：
IPA040N08NM5S
英飞凌的 80V OptiMOS™ 5 功率 MOSFET （IPA040N08NM5S）提高了系统效率，降低了系统成本。具有 4.0mOhm 的低导通电阻 RDS(on) 和低电压过冲。新型 TO-220 FullPAK 封装针对电视电源、适配器、台式机和游戏等应用进行了优化。OptiMOS™ 功率 MOSFET 功率密度和效率提高，因此是同步整流的理想解决方案。
INFINEON
IPA041N04N G
英飞凌的 40V 和 60V 产品系列不仅具有行业内极低的 R DS(on)，同时还具有快速开关应用的完美开关行为。通过先进的薄晶圆技术，与其他器件相比，实现了 R DS(on) 减低 15%，品质因数 (R DS(on) x Q g) 降低 31%。
INFINEON
IPA045N10N3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
IPA057N06N3G
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPA057N06N3GXKSA1
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPA057N08N3GXKSA1
Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
IPA060N06NXKSA1
Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明