IM828-XCC [INFINEON]
CIPOS™ Maxi 1200 V, 20 A三相智能功率模块;
| 型号： | IM828-XCC |
| 厂家： | 
Infineon |
| 描述： | CIPOS™ Maxi 1200 V, 20 A三相智能功率模块 |
| 文件： | 总23页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM828-XCC Datasheet
CIPOS™ Maxi IM828
IM828-XCC
Description
The CIPOS™ Maxi IM828 product group offers the chance for integrating various power and control components
to increase reliability, optimize PCB size and system costs. It is designed to operate as high-performance inverter
for demanding motor drive applications and active power factor correction. The product concept is specially
adapted to power applications, which need good thermal performance and electrical isolation as well as EMI
save control and overload protection. Three phase inverter with 1200V CoolSiC™ MOSFETs are combined with an
optimized 6-channel SOI gate driver for excellent electrical performance. The bodydiodes of CoolSiC™ MOSFETs
can be used as free-wheeling diode, and turning on the MOSFET during bodydiode conduction (synchronous
rectification) can be used to reduce losses further.
Features
•
•
•
Fully isolated Dual In-Line molded module
1200V CoolSiC™ MOSFETs
Rugged 1200V SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11 V
for signal transmission at VBS = 15 V
Integrated bootstrap functionality
•
•
•
•
•
•
Over current shutdown
Built-in NTC thermistor for temperature monitor
Under-voltage lockout at all channels
Low side source pins accessible for phase
current monitoring (open source)
•
•
•
•
Anti cross-conduction prevention
All of 6 switches turn off during protection
Programmable fault clear timing and enable input
Lead-free terminal plating; RoHS compliant
Potential applications
Fan drives and active power factor correction and high-performance motor drives
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table 1
Product name
IM828-XCC
Part Ordering Table
Package type
DIP 36x23D
Standard pack
Orderable part number
Form
14 pcs / tube
MOQ
280
IM828XCCXKMA1
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
page 1 of 23
V 2.1
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CIPOS™ Maxi IM828
IM828-XCC
Table of contents
Table of contents
Description .................................................................................................................................... 1
Features ........................................................................................................................................ 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
Internal electrical schematic ................................................................................................... 3
2
2.1
2.2
Pin configuration ................................................................................................................... 4
Pin assignment........................................................................................................................................4
Pin description ........................................................................................................................................5
3
Absolute maximum ratings ..................................................................................................... 7
Module section ........................................................................................................................................7
Inverter section .......................................................................................................................................7
Control section ........................................................................................................................................7
3.1
3.2
3.3
4
5
Thermal characteirstics .......................................................................................................... 8
Recommended operation conditions........................................................................................ 9
6
6.1
6.2
Static parameters .................................................................................................................10
Inverter section .....................................................................................................................................10
Control section ......................................................................................................................................10
7
7.1
7.2
Dynamic parameters .............................................................................................................12
Inverter section .....................................................................................................................................12
Control section ......................................................................................................................................13
8
Thermistor characteristics .....................................................................................................14
Mechanical characteristics and ratings ....................................................................................15
Qualification information.......................................................................................................16
9
10
11
Diagrams and tables ..............................................................................................................17
TC measurement point ..........................................................................................................................17
Backside curvature measurement point..............................................................................................17
Switching test circuit.............................................................................................................................18
Switching times definition ....................................................................................................................18
11.1
11.2
11.3
11.4
12
12.1
12.2
Application guide ..................................................................................................................19
Typical application schematic..............................................................................................................19
Performance charts...............................................................................................................................20
13
Package outline ....................................................................................................................21
Revision history.............................................................................................................................22
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Internal electrical schematic
1
Internal electrical schematic
P (24)
U (23)
(1) VS(U)
(2) VB(U)
VB1
HO1
VS1
RBS1
(3) VS(V)
(4) VB(V)
HO2
VS2
VB2
RBS2
V (22)
(5) VS(W)
(6) VB(W)
HO3
VS3
VB3
W (21)
RBS3
LO1
LO2
LO3
(7) HIN(U)
(8) HIN(V)
HIN1
HIN2
NU (20)
NV (19)
NW (18)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
(11) LIN(V)
LIN2
LIN3
VDD
RFE
(12) LIN(W)
(13) VDD
(14) RFE
(15) ITRIP
ITRIP
VSS
(16) VSS
(17) VTH
Thermistor
Figure 1
Internal electrical schematic
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CIPOS™ Maxi IM828
IM828-XCC
Pin configuration
2
Pin configuration
2.1
Pin assignment
Bottom View
(24) P
(23) U
(22) V
(21) W
(1) VS(U)
(2) VB(U)
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) RFE
(20) NU
(19) NV
(18) NW
(15) ITRIP
(16) VSS
(17) VTH
Figure 2
Table 2
Module pinout
Pin assignment
Pin name
VS(U)
Pin number
Pin description
1
2
U-phase high side floating IC supply offset voltage
U-phase high side floating IC supply voltage
V-phase high side floating IC supply offset voltage
V-phase high side floating IC supply voltage
W-phase high side floating IC supply offset voltage
W-phase high side floating IC supply voltage
U-phase high side gate driver input
VB(U)
3
VS(V)
4
VB(V)
5
VS(W)
6
VB(W)
7
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
VDD
8
V-phase high side gate driver input
9
W-phase high side gate driver input
10
11
12
13
14
15
U-phase low side gate driver input
V-phase low side gate driver input
W-phase low side gate driver input
Low side control supply
RFE
Programmable fault clear time, fault output, enable input
Over current shutdown input
ITRIP
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CIPOS™ Maxi IM828
IM828-XCC
Pin configuration
Pin number
Pin name
Pin description
Low side control negative supply
16
17
18
19
20
21
22
23
24
VSS
VTH
NW
NV
NU
W
Thermistor therminal
W-phase low side source
V-phase low side source
U-phase low side source
Motor W-phase output
Motor V-phase output
Motor U-phase output
Positive bus input voltage
V
U
P
2.2
Pin description
The integrated gate driver provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and
LO3). When two inputs of a same leg are activated,
only former activated one is activated so that the leg
is kept steadily in a safe state.
HIN (U, V, W) and LIN (U, V, W) (Low side and high
side control pins, Pin 7 - 12)
These pins are positive logic and they are
responsible for the control of the integrated
MOSFETs. The schmitt-trigger input thresholds of
them are such to guarantee LSTTL and CMOS
compatibility down to 3.3 V controller outputs. Pull-
down resistor of about 5 k is internally provided to
pre-bias inputs during supply start-up. Input
schmitt-trigger and noise filter provide beneficial
noise rejection to short input pulses.
A minimum deadtime insertion of typically 300 ns is
also provided by driver IC, in order to reduce cross-
conduction of the external power switches.
RFE (Fault / Fault clear time / Enable, Pin 14)
The RFE pin conbines three functions in one pin:
programmable fault clear time by RC-network, fault-
out and enable input.
The noise filter suppresses control pulses which are
below the filter time tFIL,IN. The filter acts according to
Figure 4.
The programmable fault-clear time can be adjusted
by RC network, which is external pull-up resistor and
capacitor. For example, typical value is about 1ms at
1 M and 2 nF.
IM828
Schmitt-Trigger
HINx
LINx
INPUT NOISE
FILTER
5k
SWITCH LEVEL
VIH; VIL
VSS
The fault-out indicates a module failure in case of
under voltage at pin VDD or in case of triggered over
current detection at ITRIP.
Figure 3
Input pin structure
The microcontroller can pull this pin low to disable
the IPM functionality. This is enable function.
a)
b)
HIN
tFIL,IN
tFIL,IN
HIN
LIN
LIN
IM828
Bi-direction
high
Schmitt-Trigger
HO
LO
HO
LO
low
NOISE FILTER
Figure 4
Input filter timing diagram
RFE
From ITRIP - Latch
From UV detection
1
It is not recommended for proper work to provide
input pulse-width lower than 1 µs.
VSS
RON,FLT
Figure 5
Internal circuit at pin RFE
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Pin configuration
VTH (Thermistor, Pin 17)
VB (U, V, W) and VS (U, V, W) (High side supplies,
Pin 1 - 6)
The VTH pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5 V ensures that the resulting
voltage can be directly connected to the
microcontroller.
VB to VS is the high side supply voltage. The high side
circuit can float with respect to VSS following the
external high side power device source voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
ITRIP (Over current detection function, Pin 15)
IM828 provides an over current detection function
by connecting the ITRIP input with the MOSFET
drain current feedback. The ITRIP comparator
threshold (typ. 0.5 V) is referenced to VSS ground. An
input noise filter (tITRIP = typ. 500 ns) prevents the
driver to detect false over-current events.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 11.2 V and a
falling threshold of VBSUV- = 10.2 V.
VS (U, V, W) provide a high robustness against
negative voltage in respect of VSS of -50 V transiently.
This ensures very stable designs even under rough
conditions.
Over current detection generates a shutdown of all
outputs of the gate driver after the shutdown
propagation delay of typically 1µs.
NW, NV, NU (Low side source, Pin 18 - 20)
Fault-clear time is set to typical 1.1ms at RRCIN = 1 M
and CRCIN = 2 nF.
The low side sources are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the control supply and it provides power both
to input logic and to output power stage. Input logic
is referenced to VSS ground.
W, V, U (High side source and low side drain, Pin
21 - 23)
These pins are motor U, V, W input pins.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.2 V is present.
P (Positive bus input voltage, Pin 24)
The high side MOSFETs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 900 V.
The IC shuts down all the gate drivers power outputs,
when the VDD supply voltage is below VDDUV- = 11.2 V.
This prevents the external power switches from
critically low gate voltage levels during on-state and
therefore from excessive power dissipation.
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Absolute maximum ratings
3
Absolute maximum ratings
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
3.1
Module section
Description
Symbol
TSTG
TC
Condition
Refer to Figure 7
1min, RMS, f = 60Hz
Value
-40 ~ 125
-40 ~ 125
-40 ~150
2500
Unit
°C
Storage temperature range
Operating case temperature
Operating junction temperature
Isolation test voltage
°C
TJ
°C
VISO
V
3.2
Inverter section
Description
Max. blocking voltage
Symbol
VDSS
Condition
Value
1200
900
Unit
V
V
V
DC link supply voltage of P-N
VPN
Applied between P-N
Applied between P-N
TC = 25°C, TJ < 150°C
TC = 80°C, TJ < 150°C
DC link supply voltage (surge) of P-N
VPN(surge)
1000
±35
DC drain current1
ID
A
±20
Pulse drain current2
IDP
±60
86
A
Power dissipation per MOSFET
Ptot
W
Short circuit withstand time3
tSC
3
µs
VDC ≤ 800 V, TJ ≤ 150°C
3.3
Control section
Description
Symbol
Condition
Value
Unit
High Side offset voltage
VS
1200
V
Repetitive peak reverse voltage of
bootstrap diode
VRRM
VDD
VBS
VIN
1200
-1 ~ 20
V
V
V
V
Module control supply voltage
High side floating supply voltage
(VB reference to VS)
-1 ~ 20
Input voltage (LIN, HIN, ITRIP, RFE)
-1 ~ VDD + 0.3
1 Pulse width and period are limited by junction temperature.
2 Verified by design, tp limited by Tjmax
3 Verified by design for single short circuit event.
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IM828-XCC
Thermal characteirstics
4
Thermal characteirstics
Value
Typ.
Description
Symbol
Condition
Unit
Min.
Max.
Single MOSFET thermal
resistance, junction-case
RthJC
-
-
-
1.45
K/W
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CIPOS™ Maxi IM828
IM828-XCC
Recommended operation conditions
5
Recommended operation conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
Symbol
Unit
Min.
350
13.5
12.5
0
Typ.
Max.
800
18.5
18.5
5
DC link supply voltage of P-N
VPN
VDD
600
V
V
Low side supply voltage
15
-
High side floating supply voltage (VB vs. VS)
Logic input voltages LIN, HIN, ITRIP, RFE
PWM carrier frequency at VDD = 15 V
External dead time between HIN & LIN
Voltage between VSS - N (including surge)
VBS
V
VIN
-
V
FPWM
DT
-
-
80
kHz
µs
V
0.5
-5
-
-
VCOMP
PWIN(ON)
PWIN(OFF)
-
5
Minimum input pulse width
Control supply variation
1
-
-
µs
ΔVBS,
ΔVDD
-1
-1
-
-
1
1
V/µs
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CIPOS™ Maxi IM828
IM828-XCC
Static parameters
6
Static parameters
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
6.1
Inverter section
Value
Typ.
Description
Symbol
Condition
Unit
Min.
Max.
ID = 20 A, VIN = 5 V
TJ = 25°C
Drain-source on-state resistance
Drain-source leakage current
Diode forward voltage
RDS(on)
IDSS
-
-
55
70
-
87
-
m
mA
V
150°C
VDS = 1200V
ISD = 20 A, VIN = 0 V
TJ = 25°C
-
1
3.9
3.8
VSD
-
-
5.8
-
150°C
6.2
Control section
Value
Description
Symbol
Condition
Unit
Min.
Typ.
1.9
Max.
2.3
-
-
Logic "1" input voltage (LIN, HIN)
Logic "0" input voltage (LIN, HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VIH
VIL
V
0.7
475
-
0.9
V
500
55
525
-
VIT,TH+
VIT,HYS
mV
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
11.5
10.5
12.2
11.2
13.0
12.0
V
V
VDD / VBS supply under voltage negative
going threshold
VDDUV-
VBSUV-
10.5
9.5
11.2
10.2
12.0
11.0
VDD / VBS supply under voltage lockout
hysteresis
VDDUVH
VBSUVH
-
-
-
1
175
1
-
-
-
V
Quiescent VBx supply current (VBx only)
IQBS
HIN = 0 V
µA
mA
LINX = 0 V,
HINX = 5 V
VIN = 5 V
Quiescent VDD supply current (VDD only)
IQDD
Input bias current for LIN, HIN
Input bias current for ITRIP
IIN+
-
-
1
-
mA
µA
IITRIP+
VITRIP = 5 V
VRFE = 5 V,
VITRIP = 0 V
IRFE = 10 mA,
VITRIP = 1 V
30
100
Input bias current for RFE
IRFE
-
-
5
µA
RFE output voltage
VRFE
-
-
0.4
1.9
-
V
V
VRFE positive going threshold
VRFE,TH+
2.3
VRFE negative going threshold
VRFE,TH-
0.7
-
0.9
-
-
V
Bootstrap diode forward voltage
VF_BSD
IF = 0.3 mA
0.9
V
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CIPOS™ Maxi IM828
IM828-XCC
Static parameters
Description
Value
Typ.
Symbol
Condition
Unit
Min.
Max.
Between VF = 4 V
and VF = 5 V
Bootstrap diode resistance
RBSD
-
120
-
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CIPOS™ Maxi IM828
IM828-XCC
Dynamic parameters
7
Dynamic parameters
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
7.1
Inverter section
Value
Description
Symbol
Condition
Unit
Min.
Typ. Max.
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
870
45
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
VHIN = 5 V,
ID = 20 A,
VDC = 600 V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
tc(on)
trr
140
60
toff
tf
960
70
VHIN = 0 V,
ID = 20 A,
VDC = 600 V
Turn-off switching time
tc(off)
100
High
side
MOSFET turn-on energy
(includes reverse recovery of
diode)
VDC = 600 V, ID = 20 A
TJ = 25°C
Eon
Eoff
Erec
-
-
0.90
1.04
-
-
mJ
mJ
mJ
150°C
VDC = 600 V, ID = 20 A
TJ = 25°C
MOSFET turn-off energy
-
-
0.48
0.66
-
-
150°C
VDC = 600 V, ID = 20 A
TJ = 25°C
Bodydiode recovery energy
-
-
0.08
0.10
-
-
150°C
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
960
85
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
VLIN = 5 V,
ID = 20 A,
VDC = 600 V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
tc(on)
trr
230
90
toff
tf
880
50
VLIN = 0 V,
ID = 20 A,
VDC = 600 V
Turn-off switching time
tc(off)
60
Low
side
MOSFET turn-on energy
(includes reverse recovery of
diode)
VDC = 600 V, ID = 20 A
TJ = 25°C
Eon
Eoff
-
-
1.51
1.62
-
-
mJ
mJ
150°C
VDC = 600 V, ID = 20 A
TJ = 25°C
MOSFET turn-off energy
-
-
0.25
0.34
-
-
150°C
VDC = 600 V, ID = 20 A
TJ = 25°C
Bodydiode recovery energy
Erec
tSCP
-
-
0.07
0.07
-
-
mJ
150°C
Short circuit propagation delay time
From VIT,TH+ to 10% ISC
-
3
-
µs
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CIPOS™ Maxi IM828
IM828-XCC
Dynamic parameters
7.2
Control section
Value
Typ.
500
Unit
Description
Symbol
Condition
Min.
Max.
Input filter time ITRIP
tITRIP
tFIL,IN
VITRIP = 1 V
-
-
ns
ns
Input filter time at LIN, HIN for
turn on and off
VLIN, HIN = 0 V or 5 V
-
350
-
VITRIP = 1V,
Fault clear time after ITRIP-fault
tFLT,CLR
Vpull-up = 5V
1.1
-
ms
(RRFE = 1 M, CRFE = 2 nF)
V
V
LIN, HIN = 0 or 5 V,
ITRIP = 1V
ITRIP to Fault propagation delay
Internal deadtime
tFLT
DTIC
MT
-
300
-
650
900
-
ns
ns
ns
VIN = 0 or VIN = 5 V
-
-
Matching propagation delay
time (On & Off) all channels
External dead time > 500ns
130
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IM828-XCC
Thermistor characteristics
8
Thermistor characteristics
Value
Typ.
85
Description
Condition
Symbol
Unit
Min.
Max.
Resistance
TNTC = 25°C
RNTC
-
-
k
B-constant of NTC
(Negative Temperature Coefficient)
B (25/100)
-
4092
-
K
3500
35
Min.
Typ.
3000
30
Max.
25
2500
20
15
2000
10
1500
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
1000
500
0
Thermistor temperature [℃]
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 6
Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN2020-41 CIPOS™ Maxi application note’)
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Mechanical characteristics and ratings
9
Mechanical characteristics and ratings
Value
Description
Condition
Unit
Min.
600
0.49
0
Typ.
Max.
-
0.78
150
-
Comparative Tracking Index (CTI)
Mounting torque
Backside curvature
Weight
-
-
-
M3 screw and washer
Refer to Figure 8
Nm
µm
g
-
7.02
Datasheet
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IM828-XCC
Qualification information
10
Qualification information
UL Certification
File number E314539
Moisture sensitivity level
(SOP package only)
-
RoHS Compliant
Yes (Lead-free terminal plating)
HBM (Human body model)
Class as per JESD22-A114
2 (> 2000 V to < 4000 V)
C3 (>= 1000 V)
ESD (Electrostatic
Discharge)
CDM (Charged Device model)
Class as per JESD22-C101
Datasheet
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IM828-XCC
Diagrams and tables
11
Diagrams and tables
11.1
TC measurement point
Figure 7
TC measurement point1
11.2
Backside curvature measurement point
Figure 8
Backside curvature measurement position
1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Diagrams and tables
11.3
Switching test circuit
P
One leg diagram
VB
22μF
0.1μF
HO
VS
100
HINx
LINx
HIN
VS
Inductor
load
LS SW
HS SW
0.1nF
VDC
U, V, W
VDD
220μF
0.1μF
VDD
100
LIN
VSS
LO
0.1nF
10m
NU, NV, NW
Figure 9
Switching test circuit
11.4
Switching times definition
HINx
2.1V
LINx
0.9V
trr
toff
ton
10%
10%
iDx
90%
90%
tf
tr
10%
10%
10%
vDSx
tc(on)
tc(off)
Figure 10 Switching times definition
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Application guide
12
Application guide
12.1
Typical application schematic
P (24)
U (23)
(1) VS(U)
(2) VB(U)
VB1
HO1
VS1
RBS1
(3) VS(V)
#4
(4) VB(V)
VB2
HO2
VS2
V (22)
RBS2
3-ph AC
Motor
(5) VS(W)
(6) VB(W)
VB3
HO3
VS3
W (21)
RBS3
#5
#1
(7) HIN(U)
HIN1
LO1
LO2
LO3
(8) HIN(V)
HIN2
NU (20)
NV (19)
(9) HIN(W)
HIN3
(10) LIN(U)
LIN1
(11) LIN(V)
LIN2
Micro
Controller
#7
#6
(12) LIN(W)
LIN3
(13) VDD
Power
GND line
VDD
VDD line
(14) RFE
RFE
#2
(15) ITRIP
ITRIP
5 or
3.3V line
(16) VSS
VSS
NW (18)
(17) VTH
Thermistor
#3.2
#3.1
<Signal for protection>
U-phase current sensing
V-phase current sensing
W-phase current sensing
5 or
3.3V line
Temperature monitor
<Signal for protection>
Figure 11 Typical application circuit
1. Input circuit
-
-
To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100 , 1 nF)
CIN should be placed as close to VSS pin as possible.
2. Itrip circuit
-
To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.
3. RFE circuit
3.1 Pull-up resistor (RRFE) and pull-down capacitor (CRFE
)
-
RFE output is an open drain output. This signal line should be pulled up to the positive side of the 5 V / 3.3 V control
power supply voltage (VCTR) with a proper resistor RFE.
-
The fault-clear time is adjusted by RC network of RRFE and CRFE and pull-up voltage.
◼
tFLTCLR = -RRFE ∙ CRFE ∙ ln(1- VRFE,TH+/VCTR) + internal fault-clear time 160 s
◼
◼
◼
tFLTCLR = -1 M x 2 nF x ln(1 - 1.9 / 5 V) + 160s 1.1ms at RRFE = 1 M, CRFE = 2 nF and VCTR = 5 V
A pull-up resistor is limited to max. 2 M
In case of VCTR is higher than 5 V, the RRFE needs to be at least 200 k to limit the IC power dissipation
3.2 RC filter
-
It is recommended that RC filter be placed as close to the controller as possible.
4. VB-VS circuit
-
Capacitor for Low side floating supply voltage should be placed as close to VB and VS pins as possible.
5. Snubber capacitor
-
The wiring between IM828 and snubber capacitor including shunt resistor should be as short as possible.
6. Shunt resistor
-
The shunt resistor of SMD type should be used for reducing its stray inductance.
7. Ground pattern
-
Ground pattern should be separated at only one point of shunt resistor as short as possible.
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Application guide
12.2
Performance charts
Figure 12 Operating current SOA1 (Based on multi-chip heating RthJC
)
1This operating current SOA is just reference information based on simulation results. It can be changed by
each user’s actual operating conditions.
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Package outline
13
Package outline
Datasheet
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CIPOS™ Maxi IM828
IM828-XCC
Revision history
Revision history
Document
version
Date of release
Description of changes
2.0
2.1
2020-09-03
2022-02-23
Initial release
Update notes (3.1) in section 12.1
Datasheet
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