IM70A135 [INFINEON]
Infineon’s XENSIV™ MEMS analog microphone IM70A135 is a compact high-performance microphone with a very high acoustic overload point of 135 dBSPL and a size of only 3.50 x 2.65 x 1.00 mm3. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The small size makes this microphone especially suited for TWS earbud applications.;
| 型号： | IM70A135 |
| 厂家： | 
Infineon |
| 描述： | Infineon’s XENSIV™ MEMS analog microphone IM70A135 is a compact high-performance microphone with a very high acoustic overload point of 135 dBSPL and a size of only 3.50 x 2.65 x 1.00 mm3. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The small size makes this microphone especially suited for TWS earbud applications. |
| 文件： | 总18页 (文件大小：701K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM70A135V01
Datasheet
IM70A135V01
h
/
h
r
h
-
High performance analog XENSIV™ MEMS microphone
Features
• Ultra-low 170µA current consumption in high performance mode
• Low current consumption 70µA in low power mode
• Signal-to-noise ratio of 70dB(A) SNR
• Acoustic overload point at 135dBSPL
• Flat frequency response with a low-frequency roll-off at 37 Hz
• Package dimensions: 3.50mm x 2.65mm x 1.00mm
Potential applications
• Active Noise Cancellation (ANC) headphones and wireless earbuds (TWS)
• Devices with Voice User Interface (VUI)
- Smart speakers
- Home automation
- IoT devices
• High quality audio capturing
- Conference systems
- Cameras and camcorders
• Industrial or home monitoring with audio pattern detection
Product validation
Technology qualified for industrial applications.
Ready for validation in industrial applications according to the relevant tests of IEC 60747 and
60749 or alternatively JEDEC47/20/22.
Description
Infineon’s XENSIV™ MEMS analog differential microphone IM70A135V01 is a compact size and high-performance microphone with
a very high acoustic overload point of 135 dBSPL. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS
technology which delivers high ingress protection (IP57) at a microphone level. The small size makes this microphone especially
suited for TWS earbud applications.
Type
Package
Marking
IM70A135V01
PG-TLGA-5-5
I70A13
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
1.00
2023-04-03
IM70A135V01
Datasheet
Table of contents
Table of contents
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Typical microphone interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
3
4
Acoustic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1
Free field frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Electrical characteristics and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5.1
5.2
5.3
6
7
8
9
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Footprint and stencil recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Reflow soldering and board assembly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10
Reliability specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
10.1
Environmental robustness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Datasheet
2
1.00
2023-04-03
IM70A135V01
Datasheet
1 Block diagram
1
Block diagram
VDD
POWER
MODE
CALIBRATION
BAND GAP
LDO
DETECTOR
MEMS BIAS
CHARGE PUMP
MEMBRANE 1
STATOR
OUT+
OUT-
AMP
AMP
MEMBRANE 2
MEMS
ASIC
GROUND
Figure 1
IM70A135V01 block diagram
2
Typical microphone interface
VDD
VDD
Analog
Input
>1µF
>1µF
R
VDD
OUT +
+
MIC
CVDD
OUT -
GND
R
GND
CODEC
Figure 2
Differential analog microphone interface example
Note:
Power supply filtering capacitors should be placed physically as close to the microphone as possible.
Detailed information on electrical, acoustical, and mechanical implementation can be found in the
application note on XENSIV™ MEMS microphone web page
Datasheet
3
1.00
2023-04-03
IM70A135V01
Datasheet
3 Typical performance characteristics
3
Typical performance characteristics
Test conditions (unless otherwise specified): VDD = 2.75V, TA= 25°C, output unloaded
12
9
30
25
20
15
10
5
6
3
0
0
-3
-6
-9
-12
-5
-10
-15
-20
10
100
1000
10000
0
20000
40000
60000
80000
Frequency [Hz]
Frequency [Hz]
Figure 3
Typical amplitude response
Figure 4
Typical ultrasonic response
90
1
-80
-90
GroupDelay
Phase
Normal Mode
45
0.1
Low Power Mode
-100
-110
-120
-130
-140
-150
-160
-170
0
0.01
0.001
-45
-90
-135
-180
0.0001
0.00001
0.000001
10
100
1000
10000
10
100
1000
10000
Frequency [Hz]
Frequency [Hz]
Figure 5
Typical group delay and phase
response
Figure 6
Typical noise floor (unweighted)
Normal Mode
Low Power Mode
135dB SPL
132dB SPL
10
1
10
1
0.1
0.01
0.1
110dB SPL
0.01
100
90
95
100
105
110
115
120
125
130
135
140
1000
10000
Input Sound Pressure Level [dB]
Frequency [Hz]
Figure 7
Typical THD vs SPL
Figure 8
Typical THD vs frequency
Datasheet
4
1.00
2023-04-03
IM70A135V01
Datasheet
3 Typical performance characteristics
200
180
160
140
120
100
80
90
85
80
75
70
65
60
55
50
45
40
Normal mode, SNR=70dB
Low power mode, SNR=69dB
60
Normal Mode
40
Low Power Mode
20
0
10
100
1000
10000
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
3.20
3.40
3.60
Frequency [Hz]
VDD [V]
Figure 9
Typical PSRR
Figure 10
Typical IDD vs VDD
Datasheet
5
1.00
2023-04-03
IM70A135V01
Datasheet
4 Acoustic characteristics
4
Acoustic characteristics
Test conditions (unless otherwise specified in the table): VDD = 2.75V, TA = 25°C, 55% R.H., audio bandwidth 20Hz to
20kHz, output unloaded
Table 1
IM70A135V01 acoustic specifications
Symbol
Parameter
Values
Typ.
Note or test
condition
Unit
Min.
Max.
Sensitivity
1kHz, 94 dB SPL,
dBV all operating
modes
S
-39
-38
-37
Low Frequency Roll-off
-3dB point relative
to 1kHz
fC LP
37
Hz
Signal to Noise
Ratio
Normal mode
Low power mode
SNRNP
SNRLP
70
69
A-Weighted
dB(A)
Total Harmonic
Distortion
Normal
mode
94dBSPL
132dBSPL
0.3
0.3
Measuring 2nd to
5th harmonics,
1kHz,
THDNP
THDLP
1.0
%
Low power 94dBSPL
mode
Sensitivity=typical
124dBSPL
1.0
Acoustic Overload Normal mode
AOPNP
AOPLP
135
Point (Typical THD
Low power mode
= 10%)
dBSPL
°
130
Phase Response
75Hz
1kHz
4kHz
250Hz
600Hz
1kHz
4kHz
25
2
-2
125
22
8
Group Delay
µs
1
Directivity
Polarity
Omnidirectional
Increasing Vout
Pickup pattern
Increasing SPL
Datasheet
6
1.00
2023-04-03
IM70A135V01
Datasheet
4 Acoustic characteristics
4.1
Free field frequency response
12
9
Upper Limit
Lower Limit
6
3
0
-3
-6
-9
-12
10
100
1000
10000
Frequency [Hz]
Figure 11
Table 2
IM70A135V01 free field frequency response
IM70A135V01 free field frequency response, normalized to 1kHz sensitivity value
Frequency [Hz]
Upper limit [dB]
Lower limit [dB]
37
-1.5
1
-4.5
-1.5
-1
100
300
1
1000
6000
8000
10000
15000
0
0
1.5
2
-1
-1
3
-1
6
0
Datasheet
7
1.00
2023-04-03
IM70A135V01
Datasheet
5 Electrical characteristics and parameters
5
Electrical characteristics and parameters
Absolute maximum ratings
5.1
Stresses at or above the listed maximum ratings may affect device reliability or cause permanent device damage.
Functional device operation at these conditions is not guaranteed.
Table 3
Absolute maximum ratings
Symbol
Parameter
Values
Unit Note / Test
Condition
Min.
Max.
Supply voltage
VDDmax
TS
3.0
100
85
V
Storage temperature
Operating temperature
-40
-40
°C
°C
TA
5.2
Electrical characteristics
Test conditions (unless otherwise specified in the table): VDD = 2.75V, TA = 25°C, 55% R.H.
Table 4
IM70A135V01 electrical characteristics
Values
Typ.
170
Parameter
Symbol
Unit
Note / Test Condition
Min.
Max.
Current
Normal mode
IDDNP
IDDLP
230
consumption
µA
Input ≤ 94 dBSPL
Low power
mode
70
10
10
80
Start-up time
Start-up time in all operating
tstartup
30
ms modes afer VDDmin is
applied
Mode switching time
Brown out voltage
Vout DC-voltage
Time of undefined output
ms
tModeChange
VBrownOut
afer mode change detected
Brown out is triggered for
voltage below VBrownOut
1.2
1.35
0.9
V
Normal mode VOUT_DC_NP
V
Low power
VOUT_DC_LP
mode
Power supply
Normal mode PSRRInBand_N
VDD=2.75V + 100mVpp
80
80
65
60
rejection ratio in
band (differential)
sinewave
P
dB
Low power
mode
PSRRInBand_L
VDD=1.6V + 100mVpp sinewave
VDD= 2.75 V + 100mVpp
P
Power supply
rejection ratio
common mode
Normal mode
PSRRCM_NP
sinewave
dB
Low power
mode
VDD= 1.6 V + 100mVpp
sinewave
PSRRCM_LP
Zout_NP
Output impedance Normal mode
250
500
Ω
Low power
mode
Zout_LP
Ω
Datasheet
8
1.00
2023-04-03
IM70A135V01
Datasheet
5 Electrical characteristics and parameters
5.3
Electrical parameters
Table 5
IM70A135V01 electrical parameters
Values
Typ.
Parameter
Symbol
Unit
Note / Test Condition
Min.
Max.
Supply voltage
Normal mode
2.3
2.75
3.0
A 100nF bypass
capacitor(CVDD) should be
placed close to the
microphone VDD pin
to ensure best SNR
performance
Low power
mode
VDD
V
1.52
1.6
1.8
VDD ramp-up time
Output load
VDD reaches its final value
within 10 % tolerance
1
ms
Cload
Rload
100
pF
25
kΩ
Datasheet
9
1.00
2023-04-03
IM70A135V01
Datasheet
6 Package information
6
Package information
Figure 12
Table 6
IM70A135V01 package drawing
IM70A135V01 pin configuration
Pin Number
Name
VDD
Description
1
2
3
4
5
Power supply
Ground
GND
Output +
Output -
GND
Differential Output +
Differential Output -
Ground
Datasheet
10
1.00
2023-04-03
IM70A135V01
Datasheet
7 Footprint and stencil recommendation
7
Footprint and stencil recommendation
The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS microphone to
ensure optimal performance. A PCB sound port size of diameter 0.6 mm is recommended.
The board pad and stencil aperture recommendations shown in Figure 13 are based on Solder Mask Defined (SMD) pads. The
specific design rules of the board manufacturer should be considered for individual design optimizations or adaptations.
Figure 13
Footprint and stencil recommendation
Datasheet
11
1.00
2023-04-03
IM70A135V01
Datasheet
8 Packing information
8
Packing information
For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A detailed drawing of
the carrier can be seen in Figure 14
Figure 14
Table 7
IM70A135V01 tape and reel packing information
IM70A135V01 packaging information
Product
Type code
Reel diameter
13"
Quantity per reel
IM70A135V01
I70A13
5000
Datasheet
12
1.00
2023-04-03
IM70A135V01
Datasheet
9 Reflow soldering and board assembly
9
Reflow soldering and board assembly
Infineon MEMS microphones are qualified in accordance with the IPC/JEDEC J-STD-020D-01. The moisture sensitivity
level of MEMS microphones is rated as MSL1. For PCB assembly of the MEMS microphone the widely used reflow
soldering using a forced convection oven is recommended.
The soldering profile should be in accordance with the recommendations of the solder paste manufacturer to reach
an optimal solder joint quality. The reflow profile shown in Figure 15 is recommended for board manufacturing with
Infineon MEMS microphones.
Figure 15
Table 8
Recommended reflow profile
Reflow profile limits
Profile feature
Temperature Min (Tsmin
Pb-Free assembly
150 °C
Sn-Pb Eutectic assembly
100 °C
)
Temperature Max (Tsmax
Time (Tsmin to Tsmax) (ts)
Ramp-up rate (TL to TP)
)
200 °C
150 °C
60-120 seconds
3 °C/second max.
217 °C
60-120 seconds
3 °C/second max.
183 °C
Liquidous temperature (TL)
Time (tL) maintained above TL
Peak Temperature (Tp)
60-150 seconds
260°C +0°C/-5°C
60-150 seconds
235°C +0°C/-5°C
Time within 5°C of actual peak
temperature (tp) 1)
20-40 seconds
10-30 seconds
Ramp-down rate
6 °C/second max.
8 minutes max.
6 °C/second max.
6 minutes max.
Time 25°C to peak temperature
1)
Tolerance for peak profile temperature (Tp) is defined as a supplier minimum and a user maximum
Note:
For further information please consult the 'General recommendation for assembly of Infineon packages'
document which is available on the Infineon Technologies web page
Datasheet
13
1.00
2023-04-03
IM70A135V01
Datasheet
9 Reflow soldering and board assembly
The MEMS microphones can be handled using industry standard pick and place equipment. Care should be taken to
avoid damage to the microphone structure as follows:
•
•
•
Do not pick the microphone with vacuum tools which make contact with the microphone acoustic port hole.
The microphone acoustic port hole should not be exposed to vacuum, this can destroy or damage the MEMS.
Do not blow air into the microphone acoustic port hole. If an air blow cleaning process is used, the port hole must
be sealed to prevent particle contamination.
•
•
It is recommended to perform the PCB assembly in a clean room environment in order to avoid microphone
contamination.
Air blow and ultrasonic cleaning procedures shall not be applied to MEMS Microphones. A no-clean paste is
recommended for the assembly to avoid subsequent cleaning steps. The microphone MEMS can be severely
damaged by cleaning substances.
•
•
To prevent the blocking or partial blocking of the sound port during PCB assembly, it is recommended to cover
the sound port with protective tape during PCB sawing or system assembly.
Do not use excessive force to place the microphone on the PCB. The use of industry standard pick and place tools
is recommended in order to limit the mechanical force exerted on the package.
Datasheet
14
1.00
2023-04-03
IM70A135V01
Datasheet
10 Reliability specifications
10
Reliability specifications
The microphone sensitivity afer stress must deviate by no more than 3dB from the initial value.
Table 9
Test
Reliability specification
Abbreviation Test Condition
Standard
Low Temperature Operating Life
Low Temperature Storage Life
High Temperature Operation Life
High Temperature Storage Life
LTOL
LTSL
Ta=-40°C, VDD=3.6V, 1000 hours
Ta=-40°C, 1000 hours
JESD22-A108
JESD22-A119
HTOL
HTSL
Ta=+125°C, VDD=3.6V, 1000 hours JESD22-A108
JESD22-A103
Ta=+125°C, 1000 hours
Temperature Cycling
PC + TC
Pre conditioning MSL-1
JESD22-A113
JESD22-A104
1000 cycles, -40°C to +125°C, 30
minutes per cycle
Temperature Humidity Bias
PC + THB
Pre conditioning MSL-1
JESD22-A113
JESD22-A101
Ta=+85°C, R.H = 85%, VDD=3.6V,
1000 hours
Vibration Test
VVF
MS
20Hz to 2000Hz with a peak
IEC 60068-2-6
acceleration of 20g in X, Y, and Z
for 4 minutes each, total 4 -cycles
Mechanical Shock
Reflow Solder1)
10000g/0.1msec direction x,y,z, 5 IEC 60068-2-27
shocks in each direction, 5 shocks
in total
RS
3 reflow cycles, peak temperature IPC-JEDEC J-STD-020D-01
= +260°C
Electrostatic Discharge -System
Level Test
ESD - SLT
3 discharges of 8kV direct contact IEC-61000-4-2
to lid while Vdd is supplied
according to the operational
modes; (Vdd ground is separated
from earth ground)
Electrostatic Discharge - Human
Body Model
ESD - HBM
ESD - CDM
1 pulse of 2kV between all I/O pin JEDEC-JS001
combinations
Electrostatic Discharge - Charged
Device Model
3 discharges of 500V direct
contact to I/O pins.
JEDEC JS-002
1)
The microphone sensitivity must deviate by no more than 1dB from the initial value afer 3 reflow cycles.
Datasheet
15
1.00
2023-04-03
IM70A135V01
Datasheet
10 Reliability specifications
10.1
Environmental robustness
Infineon’s latest Sealed Dual Membrane MEMS technology delivers high ingress protection (IP57) at a microphone
level. The sealed MEMS design prevents water or dust from entering between membrane and backplate, preventing
mechanical blockage or electric leakage issues commonly observed in MEMS microphones. Microphones built with
the Sealed Dual Membrane technology can be used to create IP68 devices, requiring only minimal mesh protection.
Table 10
Environmental robustness
Test Standard
Test Condition
IP5x dust resistance1)
Arizona dust A4 coarse, vertical orientation, sound hole upwards, 10
cycles (15 minutes sedimentation, 6 sec blowing)
IPx7 water immersion2)
Temporary immersion of 1 meters for 30 minutes. Microphone tested 2
hours afer removal
1)
2)
The number "5" stands for the dust ingress rating or the capacity to withstand the effects of fine, abrasive dust particles.
The "7" specifies the higher water immersion rating.
Datasheet
16
1.00
2023-04-03
IM70A135V01
Datasheet
Revision history
Revision history
Document
version
Date of
Description of changes
release
V1.00
2023-04-03
Initial datasheet
Datasheet
17
1.00
2023-04-03
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-04-03
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Warnings
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
a written document signed by
©
2023 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-kll1668087014279
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
相关型号：
IM70D122
High performance digital XENSIVTM MEMS microphone IM70D122 makes the most out of Infineon´s Sealed Dual Membrane technology to meet a very high signal-to-noise ratio of 70 dB(A) and a very high sensitivity of -26 dBFS. Especially thanks to its high sensitivity and high SNR the IM70D122 is perfectly tailored for advanced audio capturing which can uplift the audio experience for laptops, tablets, cameras and conference systems. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level.
INFINEON
IM72D128
The IM72D128V01 is an ultra-high performance digital microphone designed for applications which require a very high SNR (low self-noise) and low distortions (high AOP). This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The flat frequency response (20Hz low-frequency roll-off) and tight manufacturing tolerance improve performance of multi-microphone (array) applications. Different power modes can be selected in order to suit specific clock frequency and current consumption requirements.
INFINEON
IM73A135
Infineon’s XENSIV™ MEMS analog microphone IM73A135 sets a new performance benchmark in MEMS microphones. A best-in-class signal to noise ratio (SNR) of 73 dB and a high acoustic overload point of 135 dBSPL enable clear audio pick up of the quietest and the loudest sounds. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The IM73A135 allows designers to reach a level of high audio performance that was previously only achievable by ECMs while at the same time reaping the benefits inherent in MEMS technology.
INFINEON
IM73D122
Ultra-low noise digital XENSIVTM MEMS microphone IM73D122 is designed for applications which require a very high SNR (low self-noise) and a high sensitivity. The flat frequency response (20Hz low-frequency roll-off) and tight manufacturing tolerance improve performance of multi-microphone (array) applications. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level.
INFINEON
©2020 ICPDF网 联系我们和版权申明