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IKW50N65ES5 [INFINEON]

Insulated Gate Bipolar Transistor,;

IKW50N65ES5


元器件型号：	IKW50N65ES5
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 栅
PDF文件：	总16页 (文件大小：1928K)
下载文档：	下载PDF数据表文档文件
型号参数：IKW50N65ES5参数

IKW50N65F5

650V DuoPack IGBT and Diode High speed switching series fifth generation

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61 INFINEON

IKW50N65F5FKSA1

Insulated Gate Bipolar Transistor,

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0 INFINEON

IKW50N65H5

650V DuoPack IGBT and Diode High speed switching series fifth generation

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174 INFINEON

IKW50N65H5AXKSA1

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,

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4 INFINEON

IKW50N65H5FKSA1

Insulated Gate Bipolar Transistor,

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2 INFINEON

IKW50N65WR5

Reverse conducting IGBT with monolithic body diode

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1 INFINEON

IKW50N65WR5_15

Reverse conducting IGBT with monolithic body diode

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0 INFINEON

IKW75N60T

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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236 INFINEON

IKW75N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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727 INFINEON

IKW75N60T_08

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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24 INFINEON

IKW75N60TA

Insulated Gate Bipolar Transistor,

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5 INFINEON

IKW75N65EH5

IGBT单管

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64 INFINEON

IKW75N65ES5

5 high Speed soft switching IGBT with full current rated RAPID 1 diode

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6 INFINEON

IKW75N65ES5_15

5 high Speed soft switching IGBT with full current rated RAPID 1 diode

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0 INFINEON

IKY40N120CH3XKSA1

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247,

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2 INFINEON

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