IKFW90N65ES5 [INFINEON]
IGBT TRENCHSTOP™ 5;型号: | IKFW90N65ES5 |
厂家: | Infineon |
描述: | IGBT TRENCHSTOP™ 5 双极性晶体管 |
文件: | 总15页 (文件大小:1468K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀcurrent
ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
TRENCHSTOPTMꢀ5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
G
E
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀ2500VRMSꢀelectricalꢀisolation,ꢀ50/60Hz,ꢀt=1min
•ꢀ100%ꢀtestedꢀisolatedꢀmountingꢀsurface
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
PotentialꢀApplications:
Fully isolated package TO-247
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
•ꢀResonantꢀconverters
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.42V 175°C
Marking
Package
IKFW90N65ES5
650V
75A
K90EES5
PG-HSIP247-3-2
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
www.infineon.com
2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Datasheet
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IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Thꢀ=ꢀ65°C
80.0
77.0
IC
A
Thꢀ=ꢀ65°C
134.01)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Thꢀ=ꢀ65°C
IF
80.0
74.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀThꢀ=ꢀ25°C
PowerꢀdissipationꢀThꢀ=ꢀ65°C
154.0
113.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min2)
M
Nm
V
Visol
2500
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,3)
junction - heatsink
Diode thermal resistance,3)
junction - heatsink
Rth(j-h)
Rth(j-h)
Rth(j-a)
-
-
-
0.83 0.98 K/W
0.94 1.10 K/W
Thermal resistance
junction - ambient
-
65 K/W
1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier
insulator
2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3) At force on body F = 500N, Ta = 25ºC
Datasheet
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IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
650
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.42 1.75
1.65
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.50 1.75
V
V
1.45
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.75mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
3000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
100
-
nA
S
100.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4500
131
16
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
165.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
42
49
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ16.0Ω,ꢀRG(off)ꢀ=ꢀ6.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
151
43
ns
ns
Turn-on energy
Eon
Eoff
Ets
2.50
0.99
3.49
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
89
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
1.70
28.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1930
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
40
59
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ16.0Ω,ꢀRG(off)ꢀ=ꢀ6.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
178
66
ns
ns
Turn-on energy
Eon
Eoff
Ets
3.56
1.54
5.10
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
140
4.05
46.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2311
-
A/µs
Datasheet
5
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IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀheatsink
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀheatsink
temperature
temperature
(Tj≤175°C)
(VGE≥15V,ꢀTj≤175°C)
225
225
200
175
150
125
100
75
200
175
150
125
100
75
VGE = 20V
18V
15V
12V
10V
8V
VGE = 20V
18V
15V
12V
10V
8V
7V
7V
6V
6V
5V
5V
50
50
25
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=150°C)
Datasheet
6
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2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
225
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tvj = 25°C
Tvj = 150°C
IC = 37.5A
IC = 75A
IC = 150A
200
175
150
125
100
75
50
25
0
2
4
6
8
10
12
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
25
50
75 100 125 150 175 200 225
0
5
10
15
20
25
30
35
40
45
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
RG(on)=16Ω,ꢀRG(off)=6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
IC=75A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Datasheet
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2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1000
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀVCE=400V,ꢀVGE=0/15V,ꢀIC=75A,
RG(on)=16Ω,ꢀRG(off)=6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(IC=0.75mA)
30
8
Eoff
Eon
Ets
Eoff
Eon
Ets
7
25
20
15
10
5
6
5
4
3
2
1
0
0
0
25
50
75 100 125 150 175 200 225
0
5
10
15
20
25
30
35
40
45
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
RG(on)=16Ω,ꢀRG(off)=6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
IC=75A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Datasheet
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IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
6
7
6
5
4
3
2
1
0
Eoff
Eon
Ets
Eoff
Eon
Ets
5
4
3
2
1
0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(indꢀload,ꢀVCE=400V,ꢀVGE=0/15V,ꢀIC=75A,
(ind.ꢀload,ꢀTj=150°C,ꢀVGE=0/15V,ꢀIC=75A,
RG(on)=16Ω,ꢀRG(off)=6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
RG(on)=16Ω,ꢀRG(off)=6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
16
14
12
10
8
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Coes
Cres
1E+4
1000
100
6
4
2
0
10
0
20
40
60
80 100 120 140 160 180
0
10
20
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=75A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
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IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1
1
D = 0.5
0.2
D = 0.5
0.1
0.1
0.2
0.05
0.1
0.1
0.02
0.05
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
6
7
8
i:
ri[K/W]: 0.02178 0.1843 0.1653
τi[s]: 3.2E-4
1
2
3
4
5
6
ri[K/W]: 5.4E-3 0.0667 0.08795 0.1324
τi[s]:
0.2213
0.3454 0.0259
1.7E-3
0.3184
0.2894
0.02134
2.0E-5 2.6E-4 2.2E-3
0.016298 0.152431 0.71073 11.09509 32.25875
2.2E-3 0.016794 0.189957 0.886519 15.81528
0.001
0.001
1E-6 1E-5 1E-4 0.001 0.01
1E-6 1E-5 1E-4 0.001 0.01
0.1
1
10
0.1
1
10
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(D=tp/T)
180
5.0
Tvj = 25°C, IF = 75A
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
Tvj = 150°C, IF = 75A
4.5
160
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
60
40
20
0
700
900
1100
1300
1500
1700
700
900
1100
1300
1500
1700
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
10
Vꢀ2.2
2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
70
0
-1000
-2000
-3000
-4000
-5000
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
60
50
40
30
20
10
0
700
900
1100
1300
1500
1700
700
900
1100
1300
1500
1700
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
225
2.50
Tvj = 25°C
Tvj = 150°C
IF = 37.5A
IF = 75A
IF = 150A
200
2.25
175
150
125
100
75
2.00
1.75
1.50
1.25
1.00
0.75
0.50
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
11
Vꢀ2.2
2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
PG-HSIP247-3-2
MILLIMETERS
MILLIMETERS
DIMENSIONS
DIMENSIONS
MIN.
-
MAX.
5.18
4.90
2.66
0.28
1.50
0.51
1.90
MIN.
MAX.
A
A1
A2
A3
A4
A5
A6
A7
b
e
5.44
4.70
2.16
0.20
1.30
0.31
1.70
E
15.70
13.68
15.90
13.88
E1
E2
E3
E4
E5
E6
L
DOCUMENT NO.
Z8B00195711
(6.00)
3.24
4.39
3.44
4.59
REVISION
01
(1.45)
(0.25)
0.76
18.01
2.26
1.50
3.50
5.70
6.06
0.96
18.21
2.46
1.70
3.70
5.90
6.26
SCALE 3:1
1.10
1.30
0 1 2 3 4 5 6 7 8mm
b1
b2
b3
c
(2.88)
(1.60)
L1
L2
P
-
0.15
0.70
EUROPEAN PROJECTION
0.50
22.70
16.96
2.34
-
P1
Q
D
22.90
17.16
2.54
D1
D2
D3
D4
0.30
ISSUE DATE
28.06.2019
4.35
4.55
Datasheet
12
Vꢀ2.2
2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
13
Vꢀ2.2
2020-07-09
IKFW90N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
RevisionꢀHistory
IKFW90N65ES5
Revision:ꢀ2020-07-09,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2019-10-08 Final Data Sheet
2020-07-09 Updated values for DC collector current and Diode forward current
Datasheet
14
Vꢀ2.2
2020-07-09
Trademarks
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Publishedꢀby
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