IHW30N160R5 [INFINEON]
IGBT RC Soft Switching;
| 型号： | IHW30N160R5 |
| 厂家： | 
Infineon |
| 描述： | IGBT RC Soft Switching 双极性晶体管 |
| 文件： | 总15页 (文件大小：1365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IHW30N160R5
Reverse-Conducting IGBT
Reverse-Conducting IGBT with monolithic body diode
Features
• VCE = 1600 V
• IC = 30 A
• Powerful monolithic body diode with low forward voltage
• Very tight parameter distribution
• High ruggedness, temperature stable behavior
• Low VCEsat
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Low EMI
G
C
• Pb-free lead plating; RoHS compliant; halogen free (according IEC 61249-2-21)
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
E
• Induction cooking
• Microwave ovens
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IHW30N160R5
PG-TO247-3
H30SR5
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
1
2
3
4
5
6
Datasheet
2
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Internal emitter
LE
13.0
nH
inductance measured 5
mm (0.197 in) from case
Storage temperature
Soldering temperature
Tstg
-55
175
260
°C
°C
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque
M
M3 screw Maximum of mounting process: 3
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
VCE Tvj ≥ 25 °C
Parameter
Values
1600
60
Unit
Collector-emitter voltage
V
A
DC collector current,
limited by Tvjmax
IC
Tc = 25 °C
Tc = 100 °C
39
Pulsed collector current, tp
limited by Tvjmax
ICpulse
ICSM
90
A
A
A
Non repetitive peak
collector current1)
200
90
Turn-off safe operating
area
VCE = 1600 V, tp = 1 µs, Tvj ≤ 175 °C
tp ≤ 10 µs, D < 0.01
Gate-emitter voltage
VGE
VGE
20
25
V
V
Transient gate-emitter
voltage
Power dissipation
Ptot
Tc = 25 °C
Tc = 100 °C
capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3 µs
Characteristic values
Symbol Note or test condition
263
W
131.5
1)
Table 3
Parameter
Values
Typ.
Unit
Min.
Max.
Collector-emitter
breakdown voltage
VBRCES IC = 0.5 mA, VGE = 0 V
1600
V
(table continues...)
Datasheet
3
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IHW30N160R5
Reverse-Conducting IGBT
2 IGBT
Table 3
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
1.85
2.2
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 30 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
2.15
V
2.4
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.75 mA, VCE = VGE
VCE = 1600 V, VGE = 0 V
4.5
5.1
5.8
V
Zero gate-voltage collector
current
Tvj = 25 °C
100
µA
Tvj = 175 °C
800
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = 20 V
IC = 30 A, VCE = 20 V
100
nA
Transconductance
Input capacitance
Output capacitance
gfs
Cies
Coes
Cres
20.5
1500
42
S
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
pF
pF
pF
Reverse transfer
capacitance
38
Gate charge
QG
IC = 30 A, VGE = 15 V, VCC = 1280 V
205
290
nC
ns
Turn-off delay time
tdoff
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RGon = 10 Ω, RGoff = 10 Ω, IC = 30 A
Lσ = 175 nH, Cσ = 40 pF
Tvj = 175 °C,
IC = 30 A
330
47
81
2
Fall time (inductive load)
tf
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RGon = 10 Ω, RGoff = 10 Ω, IC = 30 A
ns
Lσ = 175 nH, Cσ = 40 pF
Tvj = 175 °C,
IC = 30 A
Turn-off energy
Eoff
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RGon = 10 Ω, RGoff = 10 Ω, IC = 30 A
mJ
Lσ = 175 nH, Cσ = 40 pF
Tvj = 175 °C,
IC = 30 A
3
Total switching energy
Ets
VCC = 600 V, VGE = 0/15 V, IC = 30 A
0.35
1.27
mJ
mJ
RGon = 10 Ω, RGoff = 10 Ω,
IC = 30 A
Lσ = 175 nH, Cσ = 40 pF
Sof turn-off energy
Eoff
VCC = 600 V,
dv/dt = 300 V/µs
Tvj = 25 °C
0.35
1.27
Tvj = 175 °C
IGBT thermal resistance,
junction to case
Rthjc
Tvj
0.57
175
K/W
°C
Operating junction
temperature
-40
Datasheet
4
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
3 Diode
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Symbol Note or test condition
VRRM Tvj ≥ 25 °C
Parameter
Values
Unit
Repetitive peak reverse
voltage
1600
V
Diode forward current,
limited by Tvjmax
IF
Tc = 25 °C
55
36
90
A
A
Tc = 100 °C
Diode pulsed current,
limited by Tvjmax
IFpulse
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
2
Unit
Min.
Max.
Diode forward voltage
VF
IF = 30 A
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
2.3
V
2.4
2.6
Diode thermal resistance,
junction to case
Rthjc
Tvj
0.57
175
K/W
°C
Operating junction
temperature
-40
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Datasheet
5
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area
IC = f(VCE
Power dissipation as a function of case temperature
Ptot = f(Tc)
)
D = 0 , Tvj ≤ 175 °C, VGE = 15 V, Tc = 25 °C
Tvj ≤ 175 °C
275
250
225
200
175
150
125
100
75
100
10
1
50
25
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
Collector current as a function of heatsink
temperature
IC = f(Tc)
Typical output characteristic
IC = f(VCE
Tvj = 25 °C
)
Tvj ≤ 175 °C, VGE ≥ 15 V
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
Datasheet
6
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IHW30N160R5
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical output characteristic
Typical transfer characteristic
IC = f(VGE
IC = f(VCE
)
)
Tvj = 150 °C
VCE = 20 V
90
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
1
2
3
4
5
6
2
4
6
8
10
12
Typical collector-emitter saturation voltage as a
function of junction temperature
Typical switching times as a function of collector
current
VCEsat = f(Tvj)
t = f(IC)
VGE = 15 V
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
1
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90
Datasheet
7
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical switching times as a function of gate resistor Typical switching times as a function of junction
temperature
t = f(Tvj)
t = f(RG)
IC = 30 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 30 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω
10000
1000
100
10
1000
100
10
1
1
25
50
75
100
125
150
175
10
15
20
25
30
35
40
45
50
Gate-emitter threshold voltage as a function of
junction temperature
Typical switching energy losses as a function of
collector current
VGEth = f(Tvj)
E = f(IC)
IC = 0.75 mA
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90
Datasheet
8
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2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical switching energy losses as a function of gate
resistor
Typical switching energy losses as a function of
junction temperature
E = f(RG)
E = f(Tvj)
IC = 30 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 30 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
25
50
75
100
125
150
175
10
15
20
25
30
35
40
45
50
Typical switching energy losses as a function of
collector emitter voltage
Typical resonant switching energy losses as a function
of collector current
E = f(VCE
)
E = f(IC)
IC = 30 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
VCC = 600 V, VGE = 0/15 V, RG = 10 Ω
7
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
6
5
4
3
2
1
300 400 500 600 700 800 900 1000 1100 1200
0
10
20
30
40
50
60
Datasheet
9
Revision 1.10
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IHW30N160R5
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical gate charge
Typical capacitance as a function of collector-emitter
voltage
VGE = f(QGE
)
C = f(VCE
)
IC = 30 A
f = 1000 kHz, VGE = 0 V
16
14
12
10
8
10000
1000
100
10
6
4
2
0
0
40
80
120
160
200
240
0
5
10
15
20
25
30
IGBT transient thermal impedance as a function of
pulse width
Diode transient thermal impedance as a function of
pulse width
Zth = f(tp)
Zth = f(tp)
D = tp/T
D = tp/T
1
1
0.1
0.1
0.01
0.001
0.01
0.001
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
Datasheet
10
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical diode forward current as a function of forward Typical diode forward voltage as a function of
voltage
junction temperature
IF = f(VF)
VF = f(Tvj)
90
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
0
1
2
3
4
5
Datasheet
11
Revision 1.10
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IHW30N160R5
Reverse-Conducting IGBT
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figure 1
Datasheet
12
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
13
Revision 1.10
2022-04-05
IHW30N160R5
Reverse-Conducting IGBT
Revision history
Revision history
Document revision
Date of release Description of changes
V2.1
V2.2
2018-08-28
2019-09-19
Final Data Sheet
additional parameter in maximum ratings table: non repetitive peak
collector current
n/a
2020-11-30
2022-04-05
Datasheet migrated to a new system with a new layout and new revision
number schema: target or preliminary datasheet = 0.xy; final datasheet =
1.xy
1.10
“Forward bias safe operating area” diagram renamed to “Reverse bias
safe operating area”
Tvj condition in table “Maximum rated values ” of IGBT at “Turn off safe
operating area” changed to 175°C
Datasheet
14
Revision 1.10
2022-04-05
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-04-05
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-AAL233-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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