IGA03N120H2(P-TO-220-3-31) [INFINEON]
Insulated Gate Bipolar Transistor, 3A I(C), 1200V V(BR)CES, N-Channel;
| 型号： | IGA03N120H2(P-TO-220-3-31) |
| 厂家： | 
INFINEON TECHNOLOGIES AG |
| 描述： | Insulated Gate Bipolar Transistor, 3A I(C), 1200V V(BR)CES, N-Channel 栅 |
| 文件： | 总10页 (文件大小：208K) |
| 下载： | 下载PDF数据表文档文件 |
IGA03N120H2XK
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0
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33
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0
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1
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30
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IGB01N120H2
HighSpeed 2-TechnologyWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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53
INFINEON
IGB01N120H2_07
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9
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暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
INFINEON
IGB03N120H2
HighSpeed 2-TechnologyWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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26
INFINEON
IGB03N120H2
HighSpeed 2-TechnologyWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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69
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IGB03N120H2-E3045A
Insulated Gate Bipolar Transistor, 3A I(C), 1200V V(BR)CES, N-ChannelWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
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Low Loss IGBT in Trench and Fieldstop technologyWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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52
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0
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