IFCM15S60GD [INFINEON]
CIPOS™ Mini 600 V, 15 A PFC-integrated three-phase intelligent power module;
| 型号： | IFCM15S60GD |
| 厂家： | 
Infineon |
| 描述： | CIPOS™ Mini 600 V, 15 A PFC-integrated three-phase intelligent power module 功率因数校正 |
| 文件： | 总26页 (文件大小：1267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IFCM15S60GD/IFCM15S60GS Datasheet
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Description
The CIPOS™ Mini family offers the chance for integrating various power and control components of inverter
and single boost PFC stages to increase reliability and optimize PCB size and system cost. It is designed to
control three-phase motors in variable speed drives for applications such as air-conditioners and pumps. The
package concept is specially adapted to power applications, which need good thermal conduction and
electrical isolation, but also less EMI and overload protection. To deliver excellent electrical performance, the
CIPOS™ Mini family incorporated Infineon’s leading-edge TRENCHSTOP™ IGBTs, anti-parallel diodes, and an
optimized SOI gate driver for three-phase inverter stage, and a TRENCHSTOP™ IGBT and a rapid switching
emitter controlled diode for single boost PFC stage.
Features
Package
Fully isolated dual in-line molded module
Very low thermal resistance due to DCB substrate
Lead-free terminal plating; RoHS compliant
Inverter
TRENCHSTOP™ IGBTs for inverter
Rugged SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11 V
for signal transmission at VBS = 15 V
Integrated bootstrap functionality
Over-current shutdown
Built-in NTC thermistor for temperature monitor
Under-voltage lockout at all channels
Low-side common emitter
Cross-conduction prevention
All of 6 switches turn off during protection
PFC
TRENCHSTOP™ IGBT for PFC
Rapid switching emitter controlled diode
Potential applications
Air-conditioners, fans, pumps, low power motor drives
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 26
Verison 2.4
2021-12-21
www.infineon.com
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Table 1
Product Information
Standard Pack
Base Part Number
Package Type
Remarks
Form
MOQ
280 pcs
280 pcs
IFCM15S60GD
IFCM15S60GS
DIP 36x21D
DIP 36x21D
14 pcs / Tube
14 pcs / Tube
Extended stand-off
Datasheet
2 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Table of Contents
Table of Contents
1
Internal Electrical Schematic................................................................................................... 4
2
2.1
2.2
Pin Description ...................................................................................................................... 5
Pin Assignment........................................................................................................................................5
Pin Description ........................................................................................................................................6
3
Absolute Maximum Ratings ..................................................................................................... 8
Module Section........................................................................................................................................8
Inverter Section .......................................................................................................................................8
Control Section........................................................................................................................................8
PFC Section..............................................................................................................................................9
3.1
3.2
3.3
3.4
4
5
Thermal Characteristics.........................................................................................................10
Recommended Operation Conditions ......................................................................................11
6
Static Parameters .................................................................................................................12
Inverter Section .....................................................................................................................................12
Control Section......................................................................................................................................12
PFC Section............................................................................................................................................13
6.1
6.2
6.3
7
Dynamic Parameters .............................................................................................................14
Inverter Section .....................................................................................................................................14
Control Section......................................................................................................................................14
PFC Section............................................................................................................................................15
7.1
7.2
7.3
8
Thermistor ...........................................................................................................................16
Mechanical Characteristics and Ratings ...................................................................................17
Qualification Information.......................................................................................................18
9
10
11
Diagrams and Tables .............................................................................................................19
TC Measurement Point...........................................................................................................................19
Backside Curvature Measurment Point................................................................................................19
Switching Time Definition.....................................................................................................................20
11.1
11.2
11.3
12
12.1
12.2
Application Guide..................................................................................................................21
Typical Application Schematic .............................................................................................................21
Performance Chart................................................................................................................................22
13
Package Outline....................................................................................................................23
Revision history.............................................................................................................................25
Datasheet
3 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Internal Electrical Schematic
1
Internal Electrical Schematic
GX (24)
NX (23)
(1) VS(U)
(2) VB(U)
VB1
VB2
RBS1
X (22)
P (21)
HO1
VS1
(3) VS(V)
(4) VB(V)
RBS2
HO2
VS2
(5) VS(W)
(6) VB(W)
VB3
HO3
U (20)
RBS3
VS3
LO1
(7) HIN(U)
(8) HIN(V)
HIN1
HIN2
V (19)
W (18)
N (17)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
LO2
LO3
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
LIN2
LIN3
VDD
VFO
(15) ITRIP
(16) VSS
ITRIP
VSS
Thermistor
Figure 1
Internal electrical schematic
Datasheet
4 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Pin Description
2
Pin Description
2.1
Pin Assignment
Bottom View
(24) GX
(23) NX
(22) X
(21) P
(20) U
(19) V
(1) VS(U)
(2) VB(U)
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
(18) W
(17) N
(15) ITRIP
(16) VSS
Figure 2
Table 2
Pin configuration
Pin assignment
Pin Number
Pin name
Pin Description
1
VS(U)
U-phase high-side floating IC supply offset voltage
U-phase high-side floating IC supply voltage
V-phase high-side floating IC supply offset voltage
V-phase high-side floating IC supply voltage
W-phase high-side floating IC supply offset voltage
W-phase high-side floating IC supply voltage
U-phase high-side gate driver input
V-phase high-side gate driver input
W-phase high-side gate driver input
U-phase low-side gate driver input
V-phase low-side gate driver input
W-phase low-side gate driver input
Low-side control supply
2
3
VB(U)
VS(V)
VB(V)
VS(W)
VB(W)
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
VDD
4
5
6
7
8
9
10
11
12
13
14
15
16
17
VFO
Fault output / temperature monitor
Over-current shutdown input
ITRIP
VSS
Low-side control negative supply
N
Low-side emitter
Datasheet
5 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Pin Description
Pin Number
Pin name
Pin Description
18
19
20
W
V
Motor W-phase output
Motor V-phase output
Motor U-phase output
U
21
22
23
24
P
Positive output voltage / positive bus input voltage
PFC IGBT collector
X
NX
GX
PFC IGBT emitter
PFC IGBT gate
2.2
Pin Description
HIN(U, V, W) and LIN(U, V, W) (Low-side and high-
side control pins, Pin 7 - 12)
formerly activated one is remained activated so
that the leg is kept steadily in a safe state.
A minimum deadtime insertion of typically 380 ns is
also provided by driver, in order to reduce cross-
conduction of the IGBTs.
These pins are positive logic and they are
responsible for the control of the integrated IGBTs.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3 V controller outputs. A pull-down
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under-voltage at pin VDD or in case of triggered over-
current detection at ITRIP. The same pin provides
direct access to the NTC, which is referenced to VSS.
An external pull-up resistor is required to bias the
NTC.
resistor of about 5 kΩ is internally provided to pre-
bias input during supply start-up, and a zener
clamp is provided to protect the pin. Input Schmitt-
trigger and noise filter provide noise rejection to
short input pulses.
The noise filter suppresses control pulses shoter
than the filter time tFIL,IN. The Figure 4 describes how
the filter works. An input pulse-width shorter than 1
µs is not recommended.
CIPOS
VDD
VFO
RON,FLT
From ITRIP - Latch
1
VSS
From UV detection
CIPOS
Thermistor
Schmitt-Trigger
HINx
LINx
INPUT NOISE
FILTER
Figure 5
Internal circuit at pin VFO
UZ=10.5V
5k
SWITCH LEVEL
VIH; VIL
VSS
ITRIP (Over-current detection function, Pin 15)
The CIPOS™ Mini family provides an over-current
detection function by connecting the ITRIP input
with the IGBT current feedback. The ITRIP
comparator threshold (typ. 0.47 V) is referenced to
VSS. An input noise filter (tITRIPMIN = typ. 530 ns)
prevents the driver to detect false over-current
events.
Figure 3
Input pin structure
a)
b)
HIN
tFILIN
tFILIN
HIN
LIN
LIN
high
HO
LO
HO
LO
low
Over-current detection generates a shutdown of
outputs of the gate driver after the shuntdown
propagation delay of typically 1000 ns. The fault-
clear time is set to minimum 40 µs.
Figure 4
Input filter timing diagram
The integrated gate driver additionally provides a
shoot-through prevention capability that avoids
the simultaneous on-states of the same leg (i.e.
HO1 and LO1, HO2 and LO2, HO3 and LO3). When
both inputs of the same leg are activated, only
Datasheet
6 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Pin Description
VDD, VSS (Low-side control supply and reference,
Pin 13, 16)
VS(U, V, W) provide a high robustness against
negative voltage in respect of VSS of -50 V transiently.
This ensures very stable designs even under harsh
conditions.
VDD is the control supply and it provides power both
to input logic and to output stage. Input logic is
referenced to VSS ground.
N (Low-side emitter, Pin 17)
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1 V is present.
The gate driver shuts down all the outputs, when
the VDD supply voltage is below VDDUV- = 10.4 V. This
prevents the IGBTs from critically low gate voltage
levels during on-state and therefore from excessive
power dissipation.
The low-side common emitter is available for
current measurement. It is recommended to keep
the connection to pin VSS as short as possible to
avoid unnecessary inductive voltage drops.
W, V, U (High-side emitter and low-side collector,
Pin 18 - 20)
These pins are connected to motor U, V, W input
pins.
VB(U, V, W) and VS(U, V, W) (High-side supplies,
Pin 1 - 6)
P (Positive bus input voltage, Pin 21)
VB to VS is the high-side supply voltage. The high-
side circuit can float with respect to VSS following
the high-side IGBT emitter voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The high-side IGBTs and PFC diode cathode are
connected to the bus voltage. It is noted that the
bus voltage does not exceed 450 V.
X, NX, GX (Single boost PFC, Pins 22-24)
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1 V and a
falling threshold of VBSUV- = 10.4 V.
These pins are collector, emitter, and gate of IGBT
for single boost PFC stage.
Datasheet
7 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Absolute Maximum Ratings
3
Absolute Maximum Ratings
(VDD = 15 V, VGE = 15 V and TJ = 25°C, if not stated otherwise)
3.1
Module Section
Description
Symbol
TSTG
TC
Condition
Refer to Figure 7
Value
-40 ~ 125
-40 ~ 125
-40 ~ 150
2000
Unit
°C
Storage temperature range
Operating case temperature
Operating junction temperature
Isolation test voltage
°C
TJ
°C
VISO
1 min, RMS, f = 60 Hz
V
3.2
Inverter Section
Description
Symbol
VCES
Condition
IC = 250 µA
Value
600
Unit
Max. blocking voltage
V
V
V
DC link supply voltage of P-N
DC link supply voltage (surge) of P-N
VPN
Applied between P-N
Applied between P-N
450
VPN(surge)
500
Output current
IC
TC = 25°C, TJ < 150°C
A
±15
±30
TC = 25°C, TJ < 150°C
less than 1 ms
Peak output current
IC(peak)
A
Power dissipation per IGBT
Short circuit withstand time1
Ptot
tSC
49.8
5
W
VDC ≤ 400 V, TJ = 150°C
µs
3.3
Control Section
Description
Symbol
Condition
Value
Unit
High-side offset voltage
VS
600
V
Repetitive peak reverse voltage of
bootstrap diode
VRRM
600
V
Module supply voltage
High-side floating supply voltage
Input voltage
VDD
VBS
VIN
-1 ~ 20
-1 ~ 20
-1 ~ 10
V
V
V
VB reference to VS
LIN, HIN, ITRIP
1 Allowed number of short circuits: < 1000; time between short circuits: > 1 s.
Datasheet
8 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Absolute Maximum Ratings
3.4
PFC Section
Description
Symbol
Condition
Value
Unit
Max. blocking voltage
Gate-emitter voltage
VCES
VGE = 0 V, IC = 250 µA
650
V
VGE
IC
V
A
±20
Continuous collector current
TC = 25°C , TJ < 150°C
30
TC = 25°C , TJ < 150°C
less than 1 ms
Maximum peak collector current
IC(peak)
60
A
Power dissipation
Short circuit withstand time1
Ptot
tSC
PFC IGBT
105.9
5
W
VDC ≤ 400 V, TJ = 150°C
TC = 25°C , TJ ≤ 150°C
TC = 80°C , TJ ≤ 150°C
TC = 25°C , TJ ≤ 150°C
µs
20
Diode forward current
Diode pulsed current
IF
A
15
IF(peak)
IFSM
40
A
A
Diode non repetitive surge forward
current
TC = 25°C , tp = 10 ms, sine
half-wave
110
1 Allowed number of short circuits: < 1000; time between short circuits: > 1 s.
Datasheet
9 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Thermal Characteristics
4
Thermal Characteristics
Value
Typ.
Description
Symbol
Condition
Unit
Min.
Max.
Single IGBT thermal resistance,
junction-case
RthJC
RthJC,D
RthJC
Inverter
Inverter
PFC
2.51
K/W
K/W
K/W
K/W
Single diode thermal resistance,
junction-case
4.67
1.18
2.76
Single IGBT thermal resistance,
junction-case
Single diode thermal resistance,
junction-case
RthJC,D
PFC
Datasheet
10 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Recommended Operation Conditions
5
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
Symbol
Unit
Min.
0
Typ.
Max.
450
DC link supply voltage of P-N
VPN
VDD
-
16
-
V
V
V
Low-side supply voltage
14.5
13.5
18.5
18.5
High-side floating supply voltage (VB vs. VS)
VBS
VIN
VITRIP
fPWM
Logic input voltages LIN, HIN, ITRIP
0
-
5
V
Inverter PWM carrier frequency
-
-
-
-
-
-
20
40
-
kHz
kHz
µs
PFC switching frequency
fPWM(PFC)
DT
External deadtime between HIN and LIN
Voltage between VSS – N and NX (including surge)
1.5
-5
VCOMP
PWIN(ON)
PWIN(OFF)
5
V
Minimum input pulse width
1
-
-
µs
ΔVBS,
ΔVDD
-
-
Control supply variation
-1
1
V/µs
PFC IGBT gate-emitter voltage
VGE
RG
14
-
-
18
-
V
Ω
10
4.7
10
PFC IGBT external gate parameters
CGE
RGE
-
-
nF
kΩ
-
-
Datasheet
11 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Static Parameters
6
Static Parameters
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
6.1
Inverter Section
Value
Typ.
Description
Symbol
Condition
Unit
Min.
Max.
IC = 10 A, TJ = 25°C
IC = 10 A, TJ = 150°C
-
-
1.55
1.8
2.05
-
Collector-emitter voltage
Collector-emitter leakage current
Diode forward voltage
VCE(Sat)
ICES
V
mA
V
VCE = 600 V
-
-
-
-
1
2.45
-
IF = 10 A, TJ = 25°C
IF = 10 A, TJ = 150°C
1.75
1.8
VF
6.2
Control Section
Value
Typ.
2.1
Description
Symbol
Condition
Unit
Min.
-
Max.
2.5
-
Logic "1" input voltage (LIN, HIN)
Logic "0" input voltage (LIN, HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VIH
VIL
V
0.7
400
40
0.9
V
VIT,TH+
VIT,HYS
470
70
540
-
mV
mV
VDDUV+
VBSUV+
VDD and VBS supply under-voltage
positive going threshold
10.8
9.5
12.1
10.4
13.0
11.2
V
V
VDDUV-
VBSUV-
VDD and VBS supply under-voltage
negative going threshold
VDD and VBS supply under-voltage
lockout hysteresis
VDDUVH
VBSUVH
1.0
1.7
300
370
-
V
Quiescent VBx supply current
(VBx only)
IQBS
IQDD
HIN = 0 V
-
-
500
900
µA
µA
Quiescent VDD supply current
(VDD only)
LIN= 0 V, HIN = 5 V
IIN+
IIN-
VIN = 5 V
-
-
-
-
-
-
-
1
2
1.5
mA
µA
µA
µA
V
Input bias current for LIN, HIN
VIN = 0 V
-
Input bias current for ITRIP
Input bias current for VFO
VFO output voltage
IITRIP+
IFO
VITRIP = 5 V
65
60
0.5
1
150
VFO = 5 V, VITRIP = 0 V
IFO = 10 mA, VITRIP = 1 V
IF = 0.5 mA
-
-
-
-
VFO
Bootstrap diode forward voltage
Bootstrap resistance
VF_BSD
RBSD
V
Between VF = 4 V, VF = 5 V
40
Ω
Datasheet
12 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Static Parameters
6.3
PFC Section
Value
Typ.
2.0
Description
Symbol
Condition
Unit
Min.
Max.
2.4
-
-
-
IC = 30 A, VGE = 15 V, TJ = 25°C
IC = 30 A, VGE = 15 V, TJ = 150°C
Collector-emitter voltage
VCE(Sat)
ICES
V
2.55
Collector-emitter leakage
current
VCE = 600 V
-
-
1
mA
Gate-emitter threshold
voltage
VGE(th)
IGES
VF
IC = 0.43 mA, VGE = VCE
4.1
5.1
5.7
V
µA
V
Gate-emitter leakage current
VCE = 0 V, VGE = 20 V
IF = 30 A, TJ = 25°C
IF = 30 A, TJ = 150°C
VR = 650 V
-
-
-
-
-
1
2.3
-
1.75
1.65
-
Diode forward voltage
Diode reverse leakage current
IR
1
mA
Datasheet
13 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Dynamic Parameters
7
Dynamic Parameters
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
7.1
Inverter Section
Value
Typ.
680
30
Description
Symbol
Condition
Unit
Min.
Max.
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
VLIN, HIN = 5 V,
IC = 10 A,
VDC = 300 V
Turn-on switching time
Reverse recovery time
tc(on)
trr
220
60
Turn-off propagation delay time
Turn-off fall time
toff
tf
950
55
VLIN, HIN = 0 V,
IC = 10 A,
VDC = 300 V
Turn-off switching time
Short circuit propagation delay time
tc(off)
tSCP
120
1250
From VIT,TH+ to 10% ISC
VDC = 300 V, VDD = 15 V,
IC = 10 A
TJ = 25°C
IGBT turn-on energy (includes
reverse recovery of diode)
Eon
Eoff
Erec
µJ
µJ
µJ
-
-
400
490
-
-
TJ = 150°C
VDC = 300 V, VDD = 15 V,
IC = 10 A
TJ = 25°C
IGBT turn-off energy
-
-
190
290
-
-
TJ = 150°C
VDC = 300 V, VDD = 15 V,
IC = 10 A
TJ = 25°C
Diode recovery energy
-
-
55
70
-
-
TJ = 150°C
7.2
Control Section
Value
Typ.
Description
Symbol
Condition
Unit
Min.
Max.
Bootstrap diode reverse recovery
time
IF = 0.6 A, di/dt = 80 A/
µs
trr_BSD
tITRIP
tFIL,IN
tFLTCLR
tFLT
-
-
50
530
290
65
-
ns
ns
ns
µs
ns
ns
ns
Input filter time ITRIP
VITRIP = 1 V
-
Input filter time at LIN, HIN for turn
on and off
VLIN, HIN = 0 V or 5 V
-
-
100
1000
-
Fault clear time after ITRIP-fault
ITRIP to fault propagation delay
Internal deadtime
40
-
V
V
LIN, HIN = 0 or VLIN, HIN = 5 V,
ITRIP = 1 V
730
380
20
DTIC
MT
-
External dead time > 500
ns
Matching propagation delay time (on
and off) all channels
-
-
Datasheet
14 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Dynamic Parameters
7.3
PFC Section
Value
typ
Description
Symbol
Condition
Unit
min
max
Input capacitance
Cies
Coes
Cres
-
-
-
1900
107
-
-
-
VGE = 0 V, VCE = 25 V,
f = 1 MHz
Output capacitance
pF
nC
Reverse transfer capacitance
55
VDC = 520 V, IC = 30 A,
VGE = 15 V
Gate charge
QG
-
165
-
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
-
-
-
-
-
20
90
-
-
-
-
-
ns
ns
ns
ns
ns
VDC = 400 V, IC = 30 A,
RG = 10 Ω, CGE = 4.7 nF,
RGE = 10 kΩ, TJ = 25°C
205
30
Reverse recovery time
trr
100
VDC = 400 V, IC = 30 A, RG = 10 Ω,
CGE = 4.7 nF, RGE = 10 kΩ
TJ = 25°C
Turn-on energy
Eon
Eoff
Erec
µJ
µJ
µJ
1540
2025
-
-
-
-
TJ = 150°C
VDC = 400 V, IC = 30 A, RG = 10 Ω,
CGE = 4.7 nF, RGE = 10 kΩ
TJ = 25°C
Turn-off energy
510
600
-
-
-
-
TJ = 150°C
VDC = 400 V, IC = 30 A, RG = 10 Ω,
CGE = 4.7 nF, RGE = 10 kΩ
TJ = 25°C
Diode recovery energy
50
120
-
-
-
-
TJ = 150°C
Datasheet
15 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Thermistor
8
Thermistor
Value
Typ.
85
Description
Condition
Symbol
Unit
Min.
Max.
Resistance
B-constant of NTC
(Negative Temperature Coefficient)
TNTC = 25°C
RNTC
-
-
k
B(25/100)
-
4092
-
K
3500
35
Min.
Typ.
3000
30
Max.
25
2500
20
15
2000
10
1500
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
1000
500
0
Thermistor temperature [℃]
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 6
Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN2016-10 CIPOS Mini Technical description’)
Datasheet
16 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Mechanical Characteristics and Ratings
9
Mechanical Characteristics and Ratings
Value
Description
Condition
Unit
Min.
600
0.49
-50
-
Typ.
Max.
-
Comparative Tracking Index (CTI)
Mounting torque
-
V
M3 screw and washer
Refer to Figure 8
-
-
0.78
100
-
Nm
µm
g
Backside Curvature
Weight
6.83
Datasheet
17 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Qualification Information
10
Qualification Information
UL Certification
RoHS Compliant
File number: E314539
Yes (Lead-free terminal plating)
HBM(Human Body Model) Class
2
ESD
CDM(Charged Device Model)
Class
C3
Datasheet
18 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Diagrams and Tables
11
Diagrams and Tables
11.1
TC Measurement Point
Figure 7
TC measurement point1
11.2
Backside Curvature Measurment Point
+
-
- +
Figure 8
Backside curvature measurement position
1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
19 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Diagrams and Tables
11.3
Switching Time Definition
2.1V
HINx
LINx
0.9V
trr
toff
ton
10%
10%
iCx
90%
90%
tf
tr
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 9
Switching times definition of inverter part
90%
vGE
10%
trr
td(off)
td(on)
10%
iC
90%
90%
tr
10%
10%
vCE
tf
Figure 10 Switching times definition of PFC part
Datasheet
20 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Application Guide
12
Application Guide
12.1
Typical Application Schematic
#1
RG
PFC
gate
driver
IC
GX (24)
NX (23)
X (22)
VDD line
RGE
CGE
#4
(1) VS(U)
(2) VB(U)
VB1
#8
#7
#10
RBS1
HO1
#4
#4
(3) VS(V)
(4) VB(V)
VS1
VB2
P (21)
RBS2
HO2
VS2
(5) VS(W)
(6) VB(W)
VB3
~
AC
HO3
U (20)
RBS3
VS3
LO1
#1
(7) HIN(U)
(8) HIN(V)
HIN1
#5
Micro
Controller
HIN2
(9) HIN(W)
(10) LIN(U)
V (19)
W (18)
N (17)
3-ph AC
Motor
HIN3
LIN1
(11) LIN(V)
(12) LIN(W)
LIN2
LIN3
LO2
(13) VDD
VDD
VFO
ITRIP
VSS
#9
VDD line
(14) VFO
LO3
(15) ITRIP
(16) VSS
5 or 3.3V line
#6
#3
#7
<Signal for protection>
#2
Current sensing
Input surge voltage sensing
<Signal for protection>
Figure 11 Typical application circuit
#1 Input circuit
−
RC filter can be used to reduce input signal noise. (100 Ω, 1 nF)
The capacitors should be located close to the IPM (to VSS terminal especially).
−
#2 Itrip circuit
−
To prevent protection function erros, RC filter is recommended.
The capacitor should be located close to Itrip and VSS terminals.
−
#3 VFO circuit
−
VFO pin is open drain configuration. This terminal should be pulled up to the bias voltage of the 5 V/3.3 V
through a proper resistor.
−
It is recommended that RC filter is placed close to the controller.
#4 VB-VS circuit
Capacitors for high-side floating supply voltage should be placed close to VB and VS terminals.
#5 Snubber capacitor
The wiring among the IPM, snubber capacitor and shunt resistors should be short as possible.
#6 Shunt resistor
−
−
Datasheet
21 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Application Guide
−
SMD type shunt resistors are strongly recommended to minimize its internal stray inductance.
#7 Ground pattern
−
Pattern overlap of power ground and signal ground should be minimized. The patterns should be
connected at one end of shunt resistor only for the same potential.
#8 Anti-parallel diode
It is required to connect anti-parallel diode to PFC IGBT. (2 A, voltage rating higher than 650 V)
#9 Input surge voltage protection circuit
This protection circuit can be added to protect PFC IGBT from excessive surge voltage.
#10 Inrush current protection circuit
−
−
−
Proper inrush current protection circuit has to be considered.
−
Additional components such as thermistor, relay, or bypass diode may be required depending on the
system design and the operating conditions including grid fluctuation.
12.2
Performance Chart
15
VDC = 400 V, VDD = VBS = 15 V, SVPWM
TJ 150oC, TC 125oC, M.I. = 0.8, P.F. = 0.8
12
fSW = 5 kHz
9
fSW = 15 kHz
6
3
0
0
25
50
75
100
125
150
Case temperature, TC [oC]
Figure 12 Maximum operating current SOA of inverter part1
1This maximum operating current SOA is just one of example based on typical characteristics for this product. It
can be changed by each user’s actual operating conditions.
Datasheet
22 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Package Outline
13
Package Outline
Figure 13 IFCM15S60GD
Datasheet
23 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Package Outline
Figure 14 IFCM15S60GS
Datasheet
24 of 26
Verison 2.4
2021-12-21
CIPOS™ Mini
IFCM15S60GD/IFCM15S60GS
Revision history
Revision history
Document
version
Date of release
Description of changes
V 2.0
V 2.1
V 2.2
V 2.3
V 2.4
2017-04-20
2017-08-02
2017-09-06
2020-06-15
2021-12-21
Initial release
Updated package outline and application circuit
Maximum operating case temperature, TC = 125oC
Added extended stand-off package outline
Updated 3.4 PFC section
Datasheet
25 of 26
Verison 2.4
2021-12-21
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2021-12-21
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information Please note that this product is not qualified
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents
Technologies hereby disclaims any and all of the Automotive Electronics Council.
warranties and liabilities of any kind, including
© 2021 Infineon Technologies AG.
All Rights Reserved.
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Do you have a question about this
document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Email: erratum@infineon.com
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Document reference
ifx1
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号：
©2020 ICPDF网 联系我们和版权申明