IDFW80C65D1 [INFINEON]
采用TO-247先进隔离型封装的650 V/80 A Rapid 1 硅功率二极管，为最优性价比的解决方案而打造;
| 型号： | IDFW80C65D1 |
| 厂家： | 
Infineon |
| 描述： | 采用TO-247先进隔离型封装的650 V/80 A Rapid 1 硅功率二极管，为最优性价比的解决方案而打造 二极管 |
| 文件： | 总11页 (文件大小：907K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
Emitter Controlled Rapid-1 Diode in Advanced Isolation with fully isolated package
Features
• VRRM = 650 V
• IF = 2x 40 A
• 650 V emitter controlled technology
• Temperature stable behaviour of key parameters
• Low forward voltage (VF)
• Low reverse recovery charge (Qrr)
• Low reverse recovery current (Irrm
)
Fully isolated package TO-247
• Maximum junction temperature Tvjmax = 175°C
• 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
• 100% tested isolated mounting surface
• Pb-free lead plating
• RoHS compliant
Potential applications
• Air conditioning
• General purpose drives (GPD)
• Industrial SMPS
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
• Pin 1 – anode (A1)
• Pin 2 – cathode (C)
• Pin 3 – anode (A2)
A1
A2
C
Type
Package
PG-TO247-3-AI
Marking
IDFW80C65D1
C80ED1
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Datasheet
2
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Isolation test voltage RMS1)
Visol
2500
V
Internal emitter
LE
13.0
nH
inductance measured 5
mm (0.197 in.) from case
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6mm (0.063in.) from case
for 10s
Mounting torque
M
M3 screw Maximum of mounting process: 3
0.6
65
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
1)
For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
2
Diode
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj ≥ 25 °C
650
V
Diode forward current,
limited by Tvjmax
IF
Th = 25 °C
Th = 65 °C
74
59
A
Diode pulsed current, tp
limited by Tvjmax
IFpulse
IFSM
160
A
A
Diode surge non repetitive
forward current, sine
halfwave
Th = 25 °C, tP = 10 ms
320
Power dissipation
Ptot
Th = 25 °C
Th = 65 °C
112
82
W
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.45
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 40 A
Tvj = 25 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
1.7
1.39
Reverse leakage current1)
IR
VR = 650 V
40
µA
1200
(table continues...)
Datasheet
3
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
2 Diode
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
73
Unit
Min.
Max.
Diode reverse recovery
time
trr
Qrr
Irrm
VR = 400 V
VR = 400 V
VR = 400 V
Tvj = 25 °C,
ns
IF = 40 A,
-diF/dt = 820 A/µs
Tvj = 150 °C,
IF = 40 A,
-diF/dt = 820 A/µs
120
1.1
Diode reverse recovery
charge
Tvj = 25 °C,
IF = 40 A,
-diF/dt = 820 A/µs
µC
Tvj = 150 °C,
IF = 40 A,
-diF/dt = 820 A/µs
2.62
23.5
36
Diode peak reverse
recovery current
Tvj = 25 °C,
IF = 40 A,
-diF/dt = 820 A/µs
A
Tvj = 150 °C,
IF = 40 A,
-diF/dt = 820 A/µs
Diode peak rate of fall of
reverse recovery current
dirr/dt VR = 400 V
Tvj = 25 °C,
1500
1250
1.14
A/µs
IF = 40 A,
-diF/dt = 820 A/µs
Tvj = 150 °C,
IF = 40 A,
-diF/dt = 820 A/µs
Diode thermal resistance,
junction - heatsink2)
Rthjh
Tvj
1.34
175
K/W
°C
Operating junction
temperature
-40
1)
2)
Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
At force on body F = 500N, Ta = 25°C
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Electrical Characteristic (per leg) at Tvj = 25°C, unless otherwise specified.
Dynamic test circuit, L = 30 nH, C = 40 pF, switch IKW40N65ES5.
σ
σ
Datasheet
4
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
3 Characteristics diagrams
3
Characteristics diagrams
Power dissipation per leg as a function of heatsink
temperature
Diode forward current per leg as a function of
heatsink temperature
Ptot = f(Th)
IF = f(Th)
Tvj ≤ 175 °C
120
110
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Diode transient thermal impedance per leg as a
function of pulse width
Typical reverse recovery time per leg as a function of
diode current slope
Zth(j-c) = f(tp)
trr = f(diF/dt)
D = tp/T
VR = 400 V, IF = 40 A
180
160
140
120
100
80
1
0.1
0.01
0.001
0.0001
60
40
20
1E-5
0
1E-8 1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1
1
400
500
600
700
800
900
1000
Datasheet
5
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
3 Characteristics diagrams
Typical reverse recovery charge per leg as a function Typical reverse recovery current per leg as a function
of diode current slope
Qrr = f(diF/dt)
of diode current slope
Irr = f(diF/dt)
VR = 400 V, IF = 40 A
VR = 400 V, IF = 40 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
45
40
35
30
25
20
15
10
5
0
400
500
600
700
800
900
1000
400
500
600
700
800
900
1000
Typical diode peak rate of fall of reverse recovery
current per leg as a function of diode current slope
Typical diode forward current per leg as a function of
forward voltage
dirr/dt = f(diF/dt)
IF = f(VF)
VR = 400 V, IF = 40 A
0
120
-250
100
80
60
40
20
0
-500
-750
-1000
-1250
-1500
-1750
-2000
-2250
-2500
400
500
600
700
800
900
1000
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
6
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
3 Characteristics diagrams
Typical diode forward voltage per leg as a function of
junction temperature
VF = f(Tvj)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
Datasheet
7
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
4 Package outlines
4
Package outlines
PG-HSIP247-3-2
MILLIMETERS
MILLIMETERS
DIMENSIONS
DIMENSIONS
MIN.
-
MAX.
5.18
4.90
2.66
0.28
1.50
0.51
1.90
MIN.
MAX.
A
A1
A2
A3
A4
A5
A6
A7
b
e
5.44
4.70
2.16
0.20
1.30
0.31
1.70
E
15.70
13.68
15.90
13.88
E1
E2
E3
E4
E5
E6
L
DOCUMENT NO.
Z8B00195711
(6.00)
3.24
4.39
3.44
4.59
REVISION
01
(1.45)
(0.25)
0.76
18.01
2.26
1.50
3.50
5.70
6.06
0.96
18.21
2.46
1.70
3.70
5.90
6.26
SCALE 3:1
1.10
1.30
0 1 2 3 4 5 6 7 8mm
b1
b2
b3
c
(2.88)
(1.60)
L1
L2
P
-
0.15
0.70
EUROPEAN PROJECTION
0.50
22.70
16.96
2.34
-
P1
Q
D
22.90
17.16
2.54
D1
D2
D3
D4
D5
0.30
ISSUE DATE
28.06.2019
4.35
19.70
4.55
19.90
Figure 1
Datasheet
8
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
5 Testing conditions
5
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
9
Revision 1.10
2022-06-24
IDFW80C65D1
Emitter Controlled Rapid-1 Diode in Advanced Isolation
Revision history
Revision history
Document revision
Date of release Description of changes
V2.1
V2.2
n/a
2020-07-09
2020-09-25
2020-11-30
Target datasheet
New marking description
Datasheet migrated to a new system with a new layout and new revision
number schema: target or preliminary datasheet = 0.xy; final datasheet =
1.xy
1.10
2022-06-24
Correction of package outline drawing on page 8
Datasheet
10
Revision 1.10
2022-06-24
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-06-24
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Warnings
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
©
2022 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-AAL426-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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