GA100TS60U [INFINEON]
HALF-BRIDGE IGBT INT-A-PAK; 半桥IGBT INT -A- PAK
| 型号： | GA100TS60U |
| 厂家： | 
Infineon |
| 描述： | HALF-BRIDGE IGBT INT-A-PAK |
| 文件： | 总10页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -50055B
GA100TS60U
TM
Ultra-Fast Speed IGBT
"HALF-BRIDGE" IGBT INT-A-PAK
Features
VCES = 600V
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCE(on) typ. = 1.6V
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
@V = 15V, IC = 100A
GE
• Industry standard package
• UL recognition pending
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
100
200
200
200
±20
2500
320
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Pulsed Collector Current•
ICM
A
ILM
Peak Switching Current‚
IFM
Peak Diode Forward Current
Gate-to-Emitter Voltage
VGE
V
VISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
PD @ TC = 25°C
W
PD @ TC = 85°C
170
TJ
-40 to +150
-40 to +125
°C
TSTG
Thermal / Mechanical Characteristics
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Typ.
—
Max.
0.38
0.70
—
Units
RθJC
RθJC
RθCS
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
—
°C/W
0.1
—
.
4.0
N m
—
3.0
200
—
g
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1
4/24/2000
GA100TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 1mA
V(BR)CES
VCE(on)
Collector-to-Emitter Breakdown Voltage 600
—
—
Collector-to-Emitter Voltage
Gate Threshold Voltage
—
—
3.0
—
—
—
—
—
—
—
1.6 2.1
VGE = 15V, IC = 100A
VGE = 15V, IC = 100A, TJ = 125°C
IC = 500µA
1.6
—
—
6.0
—
V
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
107
—
mV/°C VCE = VGE, IC = 500µA
gfe
Forward Transconductance „
—
S
VCE = 25V, IC = 100A
ICES
Collector-to-Emitter Leaking Current
1.0
10
—
mA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 125°C
IF = 100A, VGE = 0V
—
VFM
IGES
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
3.6
3.5
—
V
—
IF = 100A, VGE = 0V, TJ = 125°C
VGE = ±20V
100
nA
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
443 664
86 129
150 225
VCC = 400V
nC IC = 66A
TJ = 25°C
Qge
Qgc
td(on)
tr
168
145
320
242
4.0
—
—
—
—
—
—
17
—
—
—
—
—
—
—
RG1 = 27Ω, RG2 = 0Ω
IC = 100A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
VCC = 360V
Fall Time
VGE = ±15V
Eon
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
mJ
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
7.0
11
9837
615
128
143
95
VGE = 0V
VCC = 30V
ƒ = 1 MHz
IC = 100A
RG1 = 27Ω
Output Capacitance
pF
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
ns
A
Irr
Qrr
6813
1883
nC RG2 = 0Ω
di(rec)M/dt
A/µs VCC = 360V
di/dt»1300A/µs
2
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GA100TS60U
100
80
60
40
20
0
F or b oth:
D u ty c yc le : 50 %
T
T
=
1 2 5° C
9 0 °C
J
=
sink
G a te d riv e a s s pe c ified
73
W
P o w er D iss ipa tio n
=
Sq uare wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
10
T = 125oC
J
100
10
1
°
T = 25 C
J
°
T = 125 C
J
T = 25oC
J
V
= 15 V
V = 25V
CE
80µs PULSE WIDTH
GE
20µs PULSE WIDTH
0.8
1.2
1.6 2.0 2.4
5
6
7
8 9
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
GA100TS60U
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
=200 A
C
I
I
=100 A
= 50 A
C
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
°
T , Junction Temperature ( C)
T , Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.20
0.10
0.1
0.05
P
DM
0.02
0.01
t
S ingle P ulse
(Therm al Re sistance)
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJC
C
DM
0.01
0. 0001
0. 001
0. 01
0.1
1
1 0
1 0 0
1 0 0 0
t 1
, Rectangular Pulse Duration (Seconds)
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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GA100TS60U
20000
16000
12000
8000
4000
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
V
I
= 400V
= 66A
GE
CC
C
= C + C
ies
ge
gc
ce
gc ,
C
= C
= C + C
res
C
oes
gc
C
ies
C
oes
res
4
C
0
0
100
200
300
400
500
1
10
100
Q , Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
18
16
14
12
10
8
100
10
1
R
=15Ω;R = 0 Ω
= 15V
= 360V
V
V
T
= 360V
= 15V
G1 G2
CC
GE
J
V
GE
125°C
=
V
CC
I
= 100A
C
I
= 200A
= 100A
C
I
I
C
C
=
50A
-60 -40 -20
0
20 40 60 80 100 120 140 160
10
20
30
40
50
°
T , Junction Temperature ( C )
RG1 , Gate Resistance (Ω)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
GA100TS60U
300
250
200
150
100
50
30
V G E = 20V
T J = 125°C
V C E measured at terminal (Peak Voltage)
R
=15Ω;RG2 = 0 Ω
G1
°
T
= 150 C
J
V
V
GE
= 0V
= 15V
CC
25
20
15
10
5
SAFE OPERATING AREA
A
0
0
0
40
80
120
160
200
0
100
200
300
400
500
600
700
I
, Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Reverse Bias SOA
Collector-to-Emitter Current
1000
12000
10000
8000
6000
4000
2000
0
I
I
= 200A
= 100A
F
F
I
= 50A
F
100
T
T
= 125°C
= 25°C
J
J
VR = 360V
TJ = 125°C
TJ = 25°C
10
1.0
2.0
3.0
4.0
5.0
500
1000
1500
2000
Forward Voltage D rop - V
(V)
di /dt - (A/µs)
FM
f
Fig. 14 - Typical Stored Charge vs. dif/dt
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
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GA100TS60U
150
120
90
60
30
0
240
200
160
120
80
VR = 360V
TJ = 125°C
TJ = 25°C
I
I
= 200A
F
F
I
I
= 200A
= 100A
F
F
= 100A
= 50A
I
F
I
= 50A
F
VR = 36 0 V
TJ = 12 5 °C
TJ = 25 °C
500
1000
1500
2000
500
1000
1500
2000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Reverse Recovery vs. dif/dt
Fig. 16 - Typical Recovery Current vs. dif/dt
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7
GA100TS60U
90% Vge
+Vge
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
Eoff =
Vce Ic dt
∫
t1
Fig. 17 - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,
d(off), tf
t
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t4
∫
Erec =
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 20 - Test Waveforms for Circuit of Fig. 17,
Fig. 19 - Test Waveforms for Circuit of Fig. 17,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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GA100TS60U
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 21. Macro Waveforms for Figure 17's Test Circuit
480V
RL=
4 X IC @25°C
0 - 480V
Figure 22. Pulsed Collector Current
Test Circuit
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9
GA100TS60U
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
See fig. 17
For screws M5x0.8
Pulse width 80µs; single shot.
Case Outline — INT-A-PAK
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
10
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