FZ1500R45KL3_B5 [INFINEON]

10.4kV isolation;


型号：	FZ1500R45KL3_B5
厂家：	Infineon
描述：	10.4kV isolation
文件：	总15页 (文件大小：519K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FZ1500R45KL3_B5

Highly insulated module

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features

• Electrical features

- V_CES= 4500 V

- I_{C nom}= 1500 A / I_CRM= 3000 A

- High DC stability

- High dynamic robustness

- Low V_CE,sat

- Trench IGBT 3

- V_CE,satwith positive temperature coeﬀicient

- High short-circuit capability

• Mechanical features

- High creepage and clearance distances

- AlSiC base plate for increased thermal cycling capability

- Package with enhanced insulation of 10.4 kV AC 60 s

- Package with CTI > 600

- Isolated base plate

Potential applications

• High-power converters

• Medium-voltage converters

• Motor drives

• Multi-level inverter

• Traction drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

1 Package

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

10.4

Unit

Isolation test voltage

V_ISOL

V_isol

RMS, f = 50 Hz, t = 60 s

Partial discharge

extinction voltage

RMS, f = 50 Hz, Q_PD≤ 10 pC

3.5

DC stability

V_CE(D)T_vj=25°C, 100 Fit

3000

AlSiC

Material of module

baseplate

Internal isolation

Creepage distance

Clearance

basic insulation (class 1, IEC 61140)

AlN

64.0

56.0

40.0

26.0

> 600

d_Creepterminal to heatsink

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

Clearance

Comparative tracking

index

Table 2

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

Unit

Min.

Max.

Stray inductance module

L_sCE

Module lead resistance,

terminals - chip

R_CC'+EE'T_C=25°C, per switch

0.12

mΩ

Storage temperature

T_stg

-55

125

°C

Mounting torque for

module mounting

- Mounting according to M6, Screw

valid application note

4.25

5.75

Terminal connection

torque

- Mounting according to M4, Screw

1.8

2.1

valid application note

M8, Screw

Weight

1400

Note:

The maximum allowed dv/dt measured between 0,6 and 1×Vce is 1400V/µs.

IGBT, Inverter

Table 3

Maximum rated values

Parameter

Symbol Note or test condition

Values

4500

Unit

Collector-emitter voltage

V_CES

T_vj= -40 °C

T_vj= 25 °C

T_vj= 125 °C

4500

(table continues...)

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

2 IGBT, Inverter

Table 3

(continued) Maximum rated values

Symbol Note or test condition

Parameter

Values

Unit

Continuous DC collector

current

I_CDC

I_CRM

V_GES

T_{vj max}= 150 °C

T_C= 80 °C

1500

Repetitive peak collector

current

t_plimited by T_{vj op}

3000

Gate-emitter peak voltage

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

2.70

3.25

Unit

Min.

Max.

3.05

3.85

6.60

Collector-emitter

saturation voltage

V_{CE sat}I_C= 1500 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 105 mA, V_CE= V_GE, T_vj= 25 °C

5.40

V_GE= 15 V, V_CC= 2800 V

T_vj= 25 °C

39.5

0.75

280

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

f = 1000 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

Reverse transfer

capacitance

C_res

4.7

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 4500 V, V_GE= 0 V

T_vj= 25 °C

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

400

Turn-on delay time

(inductive load)

I_C= 1500 A, V_CC= 2800 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.68 Ω

0.910

0.960

0.210

0.230

7.310

7.710

1.020

1.970

T_vj= 125 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 1500 A, V_CC= 2800 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.68 Ω

µs

T_vj= 125 °C

Turn-oﬀ delay time

(inductive load)

I_C= 1500 A, V_CC= 2800 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 6.2 Ω

T_vj= 125 °C

Fall time (inductive load)

I_C= 1500 A, V_CC= 2800 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 6.2 Ω

T_vj= 125 °C

Turn-on time (resistive

load)

t_{on_R}

E_on

I_C= 500 A, V_CC= 2000 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.68 Ω

1.73

µs

Turn-on energy loss per

pulse

I_C= 1500 A, V_CC= 2800 V, T_vj= 25 °C

5200

7500

L_σ= 110 nH, V_GE= 15 V,

T_vj= 125 °C

R_Gon= 0.68 Ω, di/dt =

5200 A/µs (T_vj= 125 °C)

(table continues...)

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

3 Diode, Inverter

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Turn-oﬀ energy loss per

pulse

E_oﬀ

I_C= 1500 A, V_CC= 2800 V, T_vj= 25 °C

6050

L_σ= 110 nH, V_GE= 15 V,

R_Goﬀ= 6.2 Ω, dv/dt =

T_vj= 125 °C

7750

1300 V/µs (T_vj= 125 °C)

SC data

I_SC

V_GE≤ 15 V, V_CC= 2800 V, t_P= 10 µs,

6900

9.00

V_CEmax=V_CES-L_sCE*di/dt

T_vj= 125 °C

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per IGBT

7.40 K/kW

K/kW

Thermal resistance, case to

heat sink

per IGBT, λ_grease= 1 W/(m·K)

Temperature under

switching conditions

-50

125

°C

Diode, Inverter

Table 5

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

4500

1500

Unit

Repetitive peak reverse

voltage

T_vj= -40 °C

T_vj= 25 °C

T_vj= 125 °C

Continuous DC forward

current

I_F

Repetitive peak forward

current

I_FRM

t_P= 1 ms

3000

I²t - value

I²t

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

570

kA²s

Maximum power

dissipation

P_RQM

2400

Minimum turn-on time

t_onmin

µs

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

2.80

Unit

Min.

Max.

3.40

3.20

Forward voltage

V_F

I_F= 1500 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

2.70

Peak reverse recovery

current

I_RM

V_CC= 2800 V, I_F= 1500 A, T_vj= 25 °C

V_GE= -15 V, -di_F/dt =

5200 A/µs (T_vj= 125 °C)

1600

1800

T_vj= 125 °C

(table continues...)

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

3 Diode, Inverter

Table 6

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Recovered charge

Q_r

V_CC= 2800 V, I_F= 1500 A, T_vj= 25 °C

1300

µC

V_GE= -15 V, -di_F/dt =

T_vj= 125 °C

2500

5200 A/µs (T_vj= 125 °C)

Reverse recovery energy

E_rec

V_CC= 2800 V, I_F= 1500 A, T_vj= 25 °C

2000

4300

V_GE= -15 V, -di_F/dt =

T_vj= 125 °C

5200 A/µs (T_vj= 125 °C)

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per diode

17.0 K/kW

K/kW

Thermal resistance, case to

heat sink

per diode, λ_grease= 1 W/(m·K)

14.0

Temperature under

switching conditions

-50

125

°C

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

4 Characteristics diagrams

Characteristics diagrams

Output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

V_GE= 15 V

Output characteristic field (typical), IGBT, Inverter

I_C= f(V_CE

T_vj= 125 °C

)

3000

2750

2500

2250

2000

1750

1500

1250

1000

750

2750

2500

2250

2000

1750

1500

1250

1000

750

500

250

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

Transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

V_CE= 20 V

Switching losses (typical), IGBT, Inverter

E = f(I_C)

R_Goﬀ= 6.2 Ω, R_Gon= 0.68 Ω, V_CC= 2800 V, V_GE= -15 / 15 V

)

3000

25000

2750

2500

2250

2000

1750

1500

1250

1000

750

22500

20000

17500

15000

12500

10000

7500

5000

2500

500

250

500

1000

1500

2000

2500

3000

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

4 Characteristics diagrams

Switching losses (typical), IGBT, Inverter

E = f(R_G)

Switching times (typical), IGBT, Inverter

t = f(I_C)

I_C= 1500 A, V_CC= 2800 V, V_GE= -15 / 15 V

R_Goﬀ= 6.2 Ω, R_Gon= 0.68 Ω, V_GE= 15 V, V_CC= 2800 V, T_vj=

125 °C

27500

25000

22500

20000

17500

15000

12500

10000

7500

100

0.1

0.01

5000

2500

8 10 11 12 13 14 16 17 18

300 600 900 1200 1500 1800 2100 2400 2700 3000

Switching times (typical), IGBT, Inverter

t = f(R_G)

Transient thermal impedance , IGBT, Inverter

Z_th= f(t)

V_GE= 15 V, I_C= 1500 A, V_CC= 2800 V, T_vj= 125 °C

100

0.1

0.001

11 13 14 16 18

0.01

0.1

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

4 Characteristics diagrams

Reverse bias safe operating area (RBSOA), IGBT,

Inverter

Capacity characteristic (typical), IGBT, Inverter

C = f(V_CE

f = 1000 kHz, V_GE= 0 V, T_vj= 25 °C

)

I_C= f(V_CE

)

R_Goﬀ= 6.2 Ω, V_GE= 15 V, T_vj= 125 °C

3500

1000

3000

2500

2000

1500

1000

500

100

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

10 20 30 40 50 60 70 80 90 100

Gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

Forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

I_C= 1500 A, T_vj= 25 °C

3000

2500

2000

1500

1000

500

-3

-6

-9

-12

-15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

4 Characteristics diagrams

Switching losses (typical), Diode, Inverter

E_rec= f(I_F)

Switching losses (typical), Diode, Inverter

E_rec= f(R_G)

R_Gon= R_Gon(IGBT) , V_CC= 2800 V

I_F= 1500 A, V_CC= 2800 V

5000

4500

4000

3500

3000

2500

2000

1500

1000

500

4500

4000

3500

3000

2500

2000

1500

1000

500

1000

1500

2000

2500

3000

Transient thermal impedance, Diode, Inverter

Safe operating area (SOA), Diode, Inverter

Z_th= f(t)

I_R= f(V_R)

T_vj= 125 °C

100

3500

3000

2500

2000

1500

1000

500

0.1

0.001

1000

2000

3000

4000

5000

0.01

0.1

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

5 Circuit diagram

Circuit diagram

Figure 1

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

6 Package outlines

Package outlines

Figure 2

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

7 Module label code

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

Example

71549142846550549911530

Figure 3

Datasheet

Revision 1.00

2022-08-15

FZ1500R45KL3_B5

Highly insulated module

Revision history

Document revision

Date of release Description of changes

0.10

0.20

0.30

1.00

2021-09-15

2022-02-24

2022-05-16

2022-08-15

Initial version

Target datasheet

Preliminary datasheet

Final datasheet

Datasheet

Revision 1.00

2022-08-15

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-08-15

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Please note that this product is not qualified

according to the AEC Q100 or AEC Q101 documents

of the Automotive Electronics Council.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Warnings

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

2022 Infineon Technologies AG

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Document reference

IFX-ABC166-004

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

FZ1500R45KL3_B5 [INFINEON]

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