FS55MR12W1M1H_B11 [INFINEON]
PressFIT;
| 型号： | FS55MR12W1M1H_B11 |
| 厂家： | 
Infineon |
| 描述： | PressFIT |
| 文件： | 总16页 (文件大小：1222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FS55MR12W1M1H_B11
™
EasyPACK module
™
™
EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
Features
• Electrical features
- VDSS = 1200 V
- IDN = 15 A / IDRM = 30 A
- Low inductive design
- Low switching losses
• Mechanical features
- Rugged mounting due to integrated mounting clamps
- PressFIT contact technology
- Integrated NTC temperature sensor
Potential applications
• High-frequency switching application
• DC/DC converter
• Motor drives
• UPS systems
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
6
7
8
Datasheet
2
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
3.0
Unit
Isolation test voltage
Internal isolation
Creepage distance
Creepage distance
Clearance
VISOL
RMS, f = 50 Hz, t = 1 min
kV
basic insulation (class 1, IEC 61140)
Al2O3
11.5
6.3
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
10.0
5.0
Clearance
Comparative tracking
index
> 200
Relative thermal index
(electrical)
RTI
housing
140
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
14
Unit
Min.
Max.
Stray inductance module
LsCE
nH
Module lead resistance,
terminals - chip
RCC'+EE' TH=25°C, per switch
3
mΩ
Storage temperature
Mounting force per clamp
Weight
Tstg
F
-40
20
125
50
°C
N
g
G
24
Note:
The current under continuous operation is limited to 25 A rms per connector pin.
2
MOSFET
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
15
Unit
Drain-source voltage
VDSS
IDN
Tvj = 25 °C
TH = 95 °C
V
A
A
Implemented drain current
Continuous DC drain
current
IDDC
Tvj = 175 °C, VGS = 18 V
15
Repetitive peak drain
current
IDRM
VGS
verified by design, tp limited by Tvjmax
30
A
V
Gate-source voltage, max.
transient voltage
D < 0.01
-10/23
(table continues...)
Datasheet
3
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
2 MOSFET
Table 3
(continued) Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Gate-source voltage, max.
static voltage
VGS
-7/20
V
Table 4
Recommended values
Parameter
Symbol Note or test condition
Values
15...18
-5...0
Unit
On-state gate voltage
Off-state gate voltage
VGS(on)
VGS(off)
V
V
Table 5
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
Unit
Min.
Max.
Drain-source on-resistance RDS(on) ID = 15 A
VGS = 18 V,
Tvj = 25 °C
52.9
79
mΩ
VGS = 18 V,
Tvj = 125 °C
85.5
114
63.5
4.3
VGS = 18 V,
Tvj = 175 °C
VGS = 15 V,
Tvj = 25 °C
Gate threshold voltage
VGS(th) ID = 6 mA, VDS = VGS, Tvj = 25 °C, (tested afeꢀ
3.45
5.15
V
1ms pulse at VGS = +20 V)
Total gate charge
Internal gate resistor
Input capacitance
QG
RGint
CISS
VDS = 800 V, VGS = -3/18 V
Tvj = 25 °C
0.045
7.5
µC
Ω
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
1.35
nF
Output capacitance
COSS
Crss
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
0.064
0.004
nF
nF
Reverse transfer
capacitance
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
COSS stored energy
EOSS
IDSS
VDS = 800 V, VGS = -3/18 V, Tvj = 25 °C
26.2
0.01
µJ
µA
Drain-source leakage
current
VDS = 1200 V, VGS = -3 V
Tvj = 25 °C
110
400
Gate-source leakage
current
IGSS
VDS = 0 V, Tvj = 25 °C
VGS = 20 V
nA
ns
Turn-on delay time
(inductive load)
td on
ID = 15 A, RGon = 3.9 Ω,
VDS = 600 V, VGS = -3/18 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
23.1
23.1
23.1
(table continues...)
Datasheet
4
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
3 Body diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
19.7
Unit
Min.
Max.
Rise time (inductive load)
tr
td off
tf
ID = 15 A, RGon = 3.9 Ω,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
ns
VDS = 600 V, VGS = -3/18 V
20.5
21.1
Tuꢀn-off delay time
(inductive load)
ID = 15 A, RGoff = 3.3 Ω,
VDS = 600 V, VGS = -3/18 V
43.7
ns
ns
48.4
51.1
Fall time (inductive load)
ID = 15 A, RGoff = 3.3 Ω,
VDS = 600 V, VGS = -3/18 V
17.3
17.3
17.3
Turn-on energy loss per
pulse
Eon
ID = 15 A, VDS = 600 V,
0.235
0.297
0.334
0.037
0.041
0.043
2.03
mJ
mJ
L = 6 nH, VGS = -3/18 V,
σ
RGon = 3.9 Ω, di/dt = 1.8
kA/µs (Tvj = 175 °C)
Tuꢀn-off energy loss per
pulse
Eoff
ID = 15 A, VDS = 600 V,
L = 6 nH, VGS = -3/18 V,
σ
RGoff = 3.3 Ω, dv/dt = 27.7
kV/µs (Tvj = 175 °C)
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per MOSFET
K/W
°C
Temperature under
switching conditions
-40
175
Note:
The selection of positive and negative gate-source voltages impacts losses and the long-term behavior
of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN
2021-13 must be considered to ensure sound operation of the device over the planned lifetime.
Tvj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed
specifications, please refer to AN 2021-13.
3
Body diode
Table 6
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
DC body diode forward
current
ISD
Tvj = 175 °C, VGS = -3 V
TH = 105 °C
7
A
Datasheet
5
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
4 NTC-Thermistor
Table 7
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
4.2
Unit
Min.
Max.
Forward voltage
VSD
ISD = 15 A, VGS = -3 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
5.35
V
3.9
3.8
4
NTC-Thermistor
Table 8
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
5
Unit
Min.
Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
6
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
5 Characteristics diagrams
5
Characteristics diagrams
Output characteristic (typical), MOSFET
Output characteristic (typical), MOSFET
ID = f(VDS)
ID = f(VDS)
VGS = 18 V
VGS = 15 V
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
5.0
2.5
2.5
0.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Drain source on-resistance (typical), MOSFET
Drain source on-resistance (typical), MOSFET
RDS(on) = f(ID)
RDS(on) = f(Tvj)
VGS = 18 V
ID = 15 A
130
125
120
115
110
105
100
95
90
85
80
75
125
120
115
110
105
100
95
90
85
80
75
70
70
65
60
55
65
60
55
50
50
45
45
40
40
-50 -25
0
25
50
75 100 125 150 175
0
3
6
9
12 15 18 21 24 27 30
Datasheet
7
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
5 Characteristics diagrams
Output characteristic field (typical), MOSFET
Transfer characteristic (typical), MOSFET
ID = f(VDS)
ID = f(VGS)
Tvj = 175 °C
VDS = 20 V
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
5.0
2.5
2.5
0.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 11.0
Gate-source threshold voltage (typical), MOSFET
VGS(th) = f(Tvj)
Gate charge characteristic (typical), MOSFET
VGS = f(QG)
VGS = VDS
ID = 15 A, Tvj = 25 °C
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
18
17
15
14
13
11
10
9
8
6
5
4
2
1
-0
-2
-3
-50 -25
0
25
50
75 100 125 150 175
0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045
Datasheet
8
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
5 Characteristics diagrams
Capacity characteristic (typical), MOSFET
C = f(VDS)
Forward characteristic body diode (typical), MOSFET
ISD = f(VSD)
f = 100 kHz, Tvj = 25 °C, VGS = 0 V
Tvj = 25 °C
10
30
25
20
15
10
5
1
0.1
0.01
0.001
0
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward voltage of body diode (typical), MOSFET
VSD = f(Tvj)
Switching losses (typical), MOSFET
E = f(ID)
ISD = 15 A
RGoff = 3.3 Ω, RGon = 3.9 Ω, VDS = 600 V, VGS = -3/18 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
25
50
75
100
125
150
175
0
3
6
9
12 15 18 21 24 27 30
Datasheet
9
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
5 Characteristics diagrams
Switching losses (typical), MOSFET
E = f(RG)
Switching times (typical), MOSFET
t = f(ID)
VDS = 600 V, ID = 15 A, VGS = -3/18 V
RGoff = 3.3 Ω, RGon = 3.9 Ω, VDS = 600 V, Tvj = 175 °C, VGS
-3/18 V
=
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.1
0.01
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
Switching times (typical), MOSFET
t = f(RG)
Current slope (typical), MOSFET
di/dt = f(RG)
VDS = 600 V, ID = 15 A, Tvj = 175 °C, VGS = -3/18 V
VDS = 600 V, ID = 15 A, VGS = -3/18 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.1
0.01
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
Datasheet
10
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
5 Characteristics diagrams
Voltage slope (typical), MOSFET
dv/dt = f(RG)
Reverse bias safe operating area (RBSOA), MOSFET
ID = f(VDS)
VDS = 600 V, ID = 15 A, VGS = -3/18 V
RGoff = 3.3 Ω, Tvj = 175 °C, VGS = -3/18 V
29
26
23
20
17
14
11
8
40
30
20
10
0
0
5
10
15
20
25
30
35
40
0
200
400
600
800
1000 1200 1400
Transient thermal impedance , MOSFET
Zth = f(t)
Temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
10
100000
10000
1000
100
1
0.1
10
0.01
0.0001
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
Datasheet
11
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
6 Circuit diagram
6
Circuit diagram
J
Figure 1
Datasheet
12
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
7 Package outlines
7
Package outlines
Infineon
Figure 2
Datasheet
13
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
8 Module label code
8
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
14
Revision 1.10
2022-04-13
FS55MR12W1M1H_B11
™
EasyPACK module
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
1.00
1.10
2021-05-10
2022-03-03
2022-04-13
Target datasheet
Final datasheet
Add of missing dv/dt and di/dt in table for dynamic parameters
Datasheet
15
Revision 1.10
2022-04-13
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-04-13
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgaꢀantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
a written document signed by
©
2022 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-AAV072-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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