FS200R07A02E3_S6_技术文档

DoubleꢀSideꢀCooledꢀModule

FS200R07A02E3_S6

FinalꢀDataꢀSheet

V3.1,ꢀ2019-10-11

AutomotiveꢀHighꢀPower

FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription

V_CES= 700 V

I_C= 200 A

TypicalꢀApplications

Description

• AutomotiveꢀApplications

• HybridꢀElectricalꢀVehiclesꢀ(H)EV

The HybridPACK^TMDSC L is a very compact

six-pack module targeting hybrid and electric

vehicles.

The module is based on Infineon’s long-term

experience developing IGBT power modules and

Trench-Field-Stop IGBTs including matching diodes

with enhanced softness. Additionally, on-die

integrated current sensors and module temperature

sensors (2 x NTC) support to monitor the IGBT

state. These features enable enhanced short-circuit

protection and intelligent control of the system.

ElectricalꢀFeatures

• IncreasedꢀBlockingꢀVoltageꢀCapabilityꢀtoꢀ700V

• IntegratedꢀCurrentꢀSensor

• LowꢀInductiveꢀDesign

• T_vjꢀopꢀ=ꢀ150°C

MechanicalꢀFeatures

• 2.5kVꢀACꢀ1minꢀInsulation

• Doubleꢀsidedꢀcooling

• Compactꢀdesign

The extreme compact package is realized by using

Double Sided Cooling (DSC). This new assembly

technology enables enhanced thermal and

electrical performance at high reliability and

mechanical robustness.

• RoHSꢀcompliant

Furthermore, this module allows combination with

other existing Double Sided Cooling packages (e.g.

HybridPACK^TMDSC S) to extend the single inverter

to a dual inverter configuration.

• IntegratedꢀNTCꢀtemperatureꢀsensor

ProductꢀName

OrderingꢀCode

SP001661220

FS200R07A02E3_S6

Final Data Sheet

2

V3.1,ꢀꢀ2019-10-11

FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

2ꢀꢀꢀꢀꢀIGBT,Inverter

2.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues

Parameter

Conditions

Symbol

V_CES

I_{C nom}

I_CRM

Value

700

Unit

V

Collector-emitterꢀvoltage

T_vj= 25°C

ContinuousꢀDCꢀcollectorꢀcurrent

Repetitiveꢀpeakꢀcollectorꢀcurrent

Totalꢀpowerꢀdissipation

T_C= 65°C, T_{vj max}= 150°C

t_P= 1 ms

200

A

400

A

T_C= 25°C, T_{vj max}= 150°C

P_tot

694

W

V

Gate-emitterꢀpeakꢀvoltage

V_GES

+/-20

2.2ꢀꢀꢀꢀCharacteristicꢀValues

min. typ. max.

Collector-emitterꢀsaturationꢀvoltage

I_C= 200 A, V_GE= 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

1.45 2.25

1.60

1.70

V_{CE sat}

V

Gateꢀthresholdꢀvoltage

Gateꢀcharge

I_C= 3.70 mA, V_CE= V_GE

V_GE= -15 V ... 15 V

T_vj= 25°C

V_GEth

Q_G

5.00 5.80 6.50

V

µC

Ω

2.20

2.0

Internalꢀgateꢀresistor

T_vj= 25°C

R_Gint

C_ies

C_res

I_CES

I_GES

Inputꢀcapacitance

f = 1 MHz, V_CE= 25 V, V_GE= 0 V

V_CE= 450 V, V_GE= 0 V

13.5

0.36

0.1

nF

mA

nA

Reverseꢀtransferꢀcapacitance

Collector-emitterꢀcut-offꢀcurrent

Gate-emitterꢀleakageꢀcurrent

Turn-onꢀdelayꢀtime,ꢀinductiveꢀload

V_CE= 0 V, V_GE= 20 V

400

I_C= 200 A, V_CE= 300 V

V_GE= -8/+15 V

R_Gon= 3.6 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.13

0.14

0.15

t_{d on}

µs

mJ

Riseꢀtime,ꢀinductiveꢀload

I_C= 200 A, V_CE= 300 V

V_GE= -8/+15 V

R_Gon= 3.6 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.07

t_r

Turn-offꢀdelayꢀtime,ꢀinductiveꢀload

Fallꢀtime,ꢀinductiveꢀload

I_C= 200 A, V_CE= 300 V

V_GE= -8/+15 V

R_Goff= 3.6 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.48

0.52

0.53

t_{d off}

I_C= 200 A, V_CE= 300 V

V_GE= -8/+15 V

R_Goff= 3.6 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.03

0.04

t_f

Turn-onꢀenergyꢀlossꢀperꢀpulse

Turn-offꢀenergyꢀlossꢀperꢀpulse

I_C= 200 A, V_CE= 300 V, L_S= 25 nH

V_GE= -8/+15 V, di/dt = 3000 A/µs (T_vj= 150°C)T_vj= 125°C

R_Gon= 3.6 Ω

T_vj= 25°C

3.90

4.90

5.10

E_on

T_vj= 150°C

I_C= 200 A, V_CE= 300 V, L_S= 25 nH

V_GE= -8/+15 V, du/dt = 2500 V/µs (T_vj= 150°C)T_vj= 125°C

R_Goff= 3.6 Ω

T_vj= 25°C

6.80

8.20

8.50

E_off

mJ

A

T_vj= 150°C

SCꢀdata

V_GE≤ 15 V, V_CC= 360 V

V_CEmax= V_CES-L_sCE·di/dt

I_SC

t_P≤ 6 µs, T_vj= 150°C

1700

Thermalꢀresistance,ꢀjunctionꢀtoꢀcase

0.180¹⁾

perꢀIGBT

ClampingꢀForceꢀFꢀ=ꢀ700N

R_thJC

K/W

Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink

Temperatureꢀunderꢀswitchingꢀconditions

perꢀIGBT

0.170¹⁾

λ

_Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλ_greaseꢀ=ꢀ1ꢀW/(m·K)

R_thCH

T_{vj op}

K/W

°C

ClampingꢀForceꢀFꢀ=ꢀ700N

t_opcontinuous

-40

150

¹⁾with double sided cooling, evaluation according to HybridPack^TMDSC application note

Final Data Sheet

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

3ꢀꢀꢀꢀꢀDiode,ꢀInverter

3.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues

Parameter

Conditions

Symbol

V_RRM

I_F

Value

700

Unit

V

Repetitiveꢀpeakꢀreverseꢀvoltage

ContinuousꢀDCꢀforwardꢀcurrent

Repetitiveꢀpeakꢀforwardꢀcurrent

I²tꢀ-ꢀvalue

T_vj= 25°C

200

A

t_P= 1 ms

I_FRM

I²t

400

A

V_R= 0 V, t_P= 10 ms, T_vj= 125°C

1800

A²s

3.2ꢀꢀꢀꢀCharacteristicꢀValues

min. typ. max.

Forwardꢀvoltage

I_F= 200 A, V_GE= 0 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

1.60 2.55

1.50

V_F

V

A

Peakꢀreverseꢀrecoveryꢀcurrent

Recoveredꢀcharge

I_F= 200 A, - di_F/dt = 2900 A/µs (T_vj= 150°C) T_vj= 25°C

96.0

130

140

V_R= 300 V

V_GE= -8 V

T_vj= 125°C

T_vj= 150°C

I_RM

I_F= 200 A, - di_F/dt = 2900 A/µs (T_vj= 150°C) T_vj= 25°C

7.20

13.5

16.0

V_R= 300 V

V_GE= -8 V

T_vj= 125°C

T_vj= 150°C

Q_r

µC

mJ

K/W

Reverseꢀrecoveryꢀenergy

I_F= 200 A, - di_F/dt = 2900 A/µs (T_vj= 150°C) T_vj= 25°C

1.70

3.30

3.80

V_R= 300 V

V_GE= -8 V

T_vj= 125°C

T_vj= 150°C

E_rec

Thermalꢀresistance,ꢀjunctionꢀtoꢀcase

Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink

Temperatureꢀunderꢀswitchingꢀconditions

0.280¹⁾

perꢀdiode

ClampingꢀForceꢀFꢀ=ꢀ700N

R_thJC

perꢀdiode

0.270¹⁾

λ

_Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλ_greaseꢀ=ꢀ1ꢀW/(m·K)

R_thCH

T_{vj op}

ClampingꢀForceꢀFꢀ=ꢀ700N

t_opcontinuous

-40

150 °C

4ꢀꢀꢀꢀꢀModule

Parameter

Conditions

Symbol

Value

2.5

Unit

Isolationꢀtestꢀvoltage

Materialꢀofꢀmoduleꢀbaseplate

Internalꢀisolation

RMS, f = 50 Hz, t = 1min

V_ISOL

ꢀ

ꢀ kV

Cu

ꢀ

basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)

Al₂O₃

Creepageꢀdistance

terminalꢀtoꢀheatsink

terminalꢀtoꢀterminal

d_Creep

ꢀ

ꢀ mm

2.8

Clearance

terminalꢀtoꢀheatsink

terminalꢀtoꢀterminal

d_Clear

CTI

ꢀ

ꢀ mm

2.4

Comperativeꢀtrackingꢀindex

> 600

ꢀ

min. typ. max.

20

Strayꢀinductanceꢀmodule

Storageꢀtemperature

Terminalꢀconnectionꢀtorque

Mounting force per clamp

Weight

L_sCE

T_stg

M

nH

-40

125 °C

Nm

ScrewꢀM5

-

F

400

750

N

g

G

72

5ꢀꢀꢀꢀꢀCurrentꢀSensor

Parameter

Conditions

Symbol Min Typ Max Unit

Outputꢀvoltage

V_CE= 1.95 V, I_C= 400 A

R_sense= 1.60 Ω, T_vj= 25°C

VGE=15V

V_sense

0.26

V

¹⁾with double sided cooling, evaluation according to HybridPack^TMDSC application note

Final Data Sheet

4

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

6ꢀꢀꢀꢀꢀNTC-Thermistor

Parameter

min. typ. max.

Conditions

Symbol

R₂₅

Value

Unit

kΩ

%

Ratedꢀresistance

DeviationꢀofꢀR100

Powerꢀdissipation

B-value

T_C= 25°C

5.00

T_C= 100°C, R₁₀₀= 493 Ω

T_C= 25°C

∆R/R

P₂₅

-5

5

20.0 mW

R₂= R₂₅exp [B_25/50(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/80(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/100(1/T₂- 1/(298,15 K))]

B_25/50

B_25/80

B_25/100

3375

3411

3433

K

B-value

Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.

Final Data Sheet

5

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

7ꢀꢀꢀꢀꢀCharacteristicsꢀDiagrams

outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)

I_Cꢀ=ꢀfꢀ(V_CE

)

V_GEꢀ=ꢀ15ꢀV

T_vjꢀ=ꢀ150°C

400

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

V_GE= 19V

V_GE= 17V

V_GE= 15V

V_GE= 13V

V_GE= 11V

V_GE= 9V

360

320

280

240

200

160

120

80

350

300

250

200

150

100

50

40

0

0,0

0,5

1,0

1,5

2,0

2,5

0,0

0,5

1,0

1,5

V_CE[V]

2,0

2,5

3,0

V_CE[V]

transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)

I_Cꢀ=ꢀfꢀ(V_GE

switchingꢀlossesꢀIGBT,Inverterꢀ(typical)

E_onꢀ=ꢀfꢀ(I_C),ꢀE_offꢀ=ꢀfꢀ(I_C)

)

V_CEꢀ=ꢀ20ꢀV

V_GEꢀ=ꢀ-8ꢀVꢀ/ꢀ+15ꢀV,ꢀR_Gonꢀ=ꢀ3.6ꢀΩ,ꢀR_Goffꢀ=ꢀ3.6ꢀΩ,ꢀV_CEꢀ=ꢀ300ꢀV

400

10

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

E_on, T_vj= 125°C

E_off, T_vj= 125°C

E_on, T_vj= 150°C

E_off, T_vj= 150°C

360

320

280

240

200

160

120

80

9

8

7

6

5

4

3

2

1

0

40

0

5

6

7

8

9

10

11

12

0

40

80 120 160 200 240 280 320 360 400

V_GE[V]

I_C[A]

Final Data Sheet

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

switchingꢀlossesꢀIGBT,Inverterꢀ(typical)

E_onꢀ=ꢀfꢀ(R_G),ꢀE_offꢀ=ꢀfꢀ(R_G)

transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ

Z_thJHꢀ=ꢀfꢀ(t)

V_GEꢀ=ꢀ-8ꢀ/ꢀ+15ꢀV,ꢀI_Cꢀ=ꢀ200ꢀA,ꢀV_CEꢀ=ꢀ300ꢀV

14

1

E_on, T_vj= 125°C

E_off, T_vj= 125°C

E_on, T_vj= 150°C

Z_thJH: IGBT

12

E_off, T_vj= 150°C

10

8

0,1

6

4

2

i:

r_i[K/W]: 0,033 0,119 0,189 0,009

τ_i[s]: 0,001 0,0304 0,1782 17,167

1

2

3

4

0

0,01

2

3

4

5

6

7

8

9

10

11

12

0,001

0,01

0,1

t [s]

1

10

R_G[Ω]

reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)

I_Cꢀ=ꢀfꢀ(V_CE

forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)

I_Fꢀ=ꢀfꢀ(V_F)

)

V_GEꢀ=ꢀ-8ꢀ/ꢀ+15ꢀV,ꢀR_Goffꢀ=ꢀ3.6ꢀΩ,ꢀT_vjꢀ=ꢀ150°C

500

750

I_C, Modul

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

675

400

300

200

100

0

600

525

450

375

300

225

150

75

0

100

200

300

400

500

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6

V_CE[V]

V_F[V]

Final Data Sheet

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)

E_recꢀ=ꢀfꢀ(I_F)

switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)

E_recꢀ=ꢀfꢀ(R_G)

R_Gonꢀ=ꢀ3.6ꢀΩ,ꢀV_CEꢀ=ꢀ300ꢀV

I_Fꢀ=ꢀ200ꢀA,ꢀV_CEꢀ=ꢀ300ꢀV

6

5

E_rec, T_vj= 125°C

E_rec, T_vj= 150°C

E_rec, T_vj= 125°C

E_rec, T_vj= 150°C

5

4

3

2

1

0

4

3

2

1

0

50

100

150

200

I_F[A]

250

300

350

400

0

1

2

3

4

5

6

7

8

9

10 11 12

R_G[Ω]

transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ

Z_thJHꢀ=ꢀfꢀ(t)

1

Z_thJH: Diode

0,1

i:

r_i[K/W]: 0,078 0,205 0,255 0,012

τ_i[s]: 0,001 0,0257 0,1394 18,071

1

2

3

4

0,01

0,001

0,01

0,1

t [s]

1

10

Final Data Sheet

8

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

8ꢀꢀꢀꢀꢀCircuitꢀdiagram

Pin Number

Symbol

P

I/O

Function

1

DC Supply (+)

DC Supply (-)

AC Output

Output

Input

Positive Supply

2

N

Negative Supply

3

U

U Phase Output

4

V

V Phase Output

5

W

W Phase Output

6

PS

CS6

E6

P Terminal Voltage Sensing (IGBT Collector)

IGBT Current Sensor System 6

IGBT Emitter Output System 6

Gate Input System 6

7

8

9

G6

CS5

E5

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

Output

Input

IGBT Current Sensor System 5

IGBT Emitter Output System 5

Gate Input System 5

G5

CS4

E4

Output

Input

IGBT Current Sensor System 4

IGBT Emitter Output System 4

Gate Input System 4

G4

T1

Output

Ground

Output

Input

NTC 1 +(Bottom DCB)

TG

T2

NTC Ground

NTC 2 +(Top DCB)

CS3

E3

IGBT Current Sensor System 3

IGBT Emitter Output System 3

Gate Input System 3

G3

CS2

E2

Output

Input

IGBT Current Sensor System 2

IGBT Emitter Output System 2

Gate Input System 2

G2

CS2

E1

Output

Input

IGBT Current Sensor System 1

IGBT Emitter Output System 1

Gate Input System 1

G1

PS

Output

P Terminal Voltage Sensing (IGBT Collector)

Final Data Sheet

9

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

9ꢀꢀꢀꢀꢀPackageꢀoutlines

Final Data Sheet

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

10ꢀꢀꢀꢀꢀLabelꢀCodes

10.1ꢀꢀꢀꢀModuleꢀCode

CodeꢀFormat

Data Matrix

Encoding

ASCII Text

SymbolꢀSize

Standard

16x16

IEC24720 and IEC16022

CodeꢀContent

Content

Digit

Exampleꢀ(below)

Module Serial Number

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

1 - 5

71549

142846

55054991

15

6 - 11

12 - 19

20 - 21

22 - 23

30

Example

71549142846550549911530

10.2ꢀꢀꢀꢀPackingꢀCode

CodeꢀFormat

Code128

Code Set A

34 digits

Encoding

SymbolꢀSize

Standard

IEC8859-1

CodeꢀContent

Content

Identifier

X

1T

S

9D

Q

Digit

2 - 9

12 - 19

21 - 25

28 - 31

33 - 34

Exampleꢀ(below)

95056609

2X0003E0

754389

1139

15

Backend Construction Number

Production Lot Number

Serial Number

Date Code

Box Quantity

Example

X950566091T2X0003E0S754389D1139Q15

Final Data Sheet

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

RevisionꢀHistory

Major changes since previous revision

Revision History

Reference

V1.0

Date

Description

2015-07-31

2016-12-13

2019-10-11

-

V3.0

final datasheet

V3.1

Change of ordering code number

Final Data Sheet

12

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FS200R07A02E3_S6

DoubleꢀSideꢀCooledꢀModule

Termsꢀ&ꢀConditionsꢀofꢀusage

ꢀ

Editionꢀ2018-08-01

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMunich,ꢀGermany

AllꢀRightsꢀReserved.

LegalꢀDisclaimer

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWithꢀrespectꢀtoꢀany

examplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀdevice,ꢀInfineon

Technologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation,ꢀwarrantiesꢀofꢀnon-infringementꢀof

intellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.

Information

Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀprices,ꢀpleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice

(http://www.infineon.com)

Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,ꢀpleaseꢀcontactꢀthe

nearestꢀInfineonꢀTechnologiesꢀOffice.

Theseꢀcomponentsꢀareꢀnotꢀdesignedꢀforꢀ“specialꢀapplications”ꢀthatꢀdemandꢀextremelyꢀhighꢀreliabilityꢀorꢀsafetyꢀsuchꢀasꢀaerospace,ꢀdefenseꢀorꢀlife

supportꢀdevicesꢀorꢀsystemsꢀ(ClassꢀIIIꢀmedicalꢀdevices).ꢀIfꢀyouꢀintendꢀtoꢀuseꢀtheꢀcomponentsꢀinꢀanyꢀofꢀtheseꢀspecialꢀapplications,ꢀpleaseꢀcontact

yourꢀlocalꢀrepresentativeꢀatꢀInternationalꢀRectifierꢀHiRelꢀProducts,ꢀInc.ꢀorꢀtheꢀInfineonꢀsupportꢀ(https://www.infineon.com/support)ꢀtoꢀreview

productꢀrequirementsꢀandꢀreliabilityꢀtesting.

InfineonꢀTechnologiesꢀcomponentsꢀmayꢀbeꢀusedꢀinꢀspecialꢀapplicationsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies.ꢀClass

IIIꢀmedicalꢀdevicesꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀthey

fail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Trademarks

ꢀ

TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG

AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀEconoPACK™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,

DI-POL™,ꢀEasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPIM™,ꢀEconoPACK™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,

HybridPACK™,ꢀI²RF™,ꢀISOFACE™,ꢀIsoPACK™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,

PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPRO-SIL™,ꢀPROFET™,ꢀRASIC™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSINDRION™,

SIPMOS™,ꢀSmartLEWIS™,ꢀSOLIDꢀFLASH™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.

OtherꢀTrademarks

AdvanceꢀDesignꢀSystem™ꢀ(ADS)ꢀofꢀAgilentꢀTechnologies,ꢀAMBA™,ꢀARM™,ꢀMULTI-ICE™,ꢀKEIL™,ꢀPRIMECELL™,ꢀREALVIEW™,ꢀTHUMB™,

µVision™ꢀofꢀARMꢀLimited,ꢀUK.ꢀAUTOSAR™ꢀisꢀlicensedꢀbyꢀAUTOSARꢀdevelopmentꢀpartnership.ꢀBluetooth™ꢀofꢀBluetoothꢀSIGꢀInc.ꢀCAT-iq™ꢀof

DECTꢀForum.ꢀCOLOSSUS™,ꢀFirstGPS™ꢀofꢀTrimbleꢀNavigationꢀLtd.ꢀEMV™ꢀofꢀEMVCo,ꢀLLCꢀ(VisaꢀHoldingsꢀInc.).ꢀEPCOS™ꢀofꢀEpcosꢀAG.

FLEXGO™ꢀofꢀMicrosoftꢀCorporation.ꢀFlexRay™ꢀisꢀlicensedꢀbyꢀFlexRayꢀConsortium.ꢀHYPERTERMINAL™ꢀofꢀHilgraeveꢀIncorporated.ꢀIEC™ꢀof

CommissionꢀElectrotechniqueꢀInternationale.ꢀIrDA™ꢀofꢀInfraredꢀDataꢀAssociationꢀCorporation.ꢀISO™ꢀofꢀINTERNATIONALꢀORGANIZATION

FORꢀSTANDARDIZATION.ꢀMATLAB™ꢀofꢀMathWorks,ꢀInc.ꢀMAXIM™ꢀofꢀMaximꢀIntegratedꢀProducts,ꢀInc.ꢀMICROTEC™,ꢀNUCLEUS™ꢀofꢀMentor

GraphicsꢀCorporation.ꢀMIPI™ꢀofꢀMIPIꢀAlliance,ꢀInc.ꢀMIPS™ꢀofꢀMIPSꢀTechnologies,ꢀInc.,ꢀUSA.ꢀmuRata™ꢀofꢀMURATAꢀMANUFACTURINGꢀCO.,

MICROWAVEꢀOFFICE™ꢀ(MWO)ꢀofꢀAppliedꢀWaveꢀResearchꢀInc.,ꢀOmniVision™ꢀofꢀOmniVisionꢀTechnologies,ꢀInc.ꢀOpenwave™ꢀOpenwave

SystemsꢀInc.ꢀREDꢀHAT™ꢀRedꢀHat,ꢀInc.ꢀRFMD™ꢀRFꢀMicroꢀDevices,ꢀInc.ꢀSIRIUS™ꢀofꢀSiriusꢀSatelliteꢀRadioꢀInc.ꢀSOLARIS™ꢀofꢀSun

Microsystems,ꢀInc.ꢀSPANSION™ꢀofꢀSpansionꢀLLCꢀLtd.ꢀSymbian™ꢀofꢀSymbianꢀSoftwareꢀLimited.ꢀTAIYOꢀYUDEN™ꢀofꢀTaiyoꢀYudenꢀCo.

TEAKLITE™ꢀofꢀCEVA,ꢀInc.ꢀTEKTRONIX™ꢀofꢀTektronixꢀInc.ꢀTOKO™ꢀofꢀTOKOꢀKABUSHIKIꢀKAISHAꢀTA.ꢀUNIX™ꢀofꢀX/OpenꢀCompanyꢀLimited.

VERILOG™,ꢀPALLADIUM™ꢀofꢀCadenceꢀDesignꢀSystems,ꢀInc.ꢀVLYNQ™ꢀofꢀTexasꢀInstrumentsꢀIncorporated.ꢀVXWORKS™,ꢀWINDꢀRIVER™ꢀof

WINDꢀRIVERꢀSYSTEMS,ꢀINC.ꢀZETEX™ꢀofꢀDiodesꢀZetexꢀLimited.

Last update

2011-11-11

Final Data Sheet

13

V3.1,ꢀꢀ2019-10-11

wꢀwꢀwꢀ.ꢀiꢀnꢀfꢀiꢀnꢀeꢀoꢀnꢀ.ꢀcꢀoꢀm

PublishedꢀbyꢀInfineonꢀTechnologiesꢀAG


型号：	FS200R07A02E3_S6
厂家：	Infineon
描述：	Double Side Cooled
文件：	总14页 (文件大小：1064K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FS200R07A02E3_S6 [INFINEON]

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