FP200R12N3T7_B11 [INFINEON]
PressFIT;
| 型号： | FP200R12N3T7_B11 |
| 厂家： | 
Infineon |
| 描述： | PressFIT |
| 文件： | 总20页 (文件大小：608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FP200R12N3T7_B11
™
EconoPIM 3 module
Preliminary datasheet
EconoPIM 3 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC
™
™
Features
• Electrical features
- VCES = 1200 V
- IC nom = 200 A / ICRM = 400 A
- TRENCHSTOPTM IGBT7
- Overload operation up to 175°C
- Low VCEsat
• Mechanical features
- Integrated NTC temperature sensor
- PressFIT contact technology
- Copper base plate
- Al2O3 substrate with low thermal resistance
Potential applications
• Auxiliary inverters
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
1
2
3
4
5
6
7
8
9
10
Datasheet
2
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
2.5
Unit
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
kV
Material of module
baseplate
Cu
Internal Isolation
Creepage distance
Clearance
basic insulation (class 1, IEC 61140)
Al2O3
10.0
7.5
dCreep terminal to heatsink
mm
mm
dClear terminal to heatsink
Comparative tracking index
RTI Elec.
CTI
> 200
140
RTI
housing
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Stray inductance module
LsCE
25
nH
Module lead resistance,
terminals - chip
RAA'+CC' TC=25°C, per switch
RCC'+EE' TC=25°C, per switch
Tstg
1.1
mΩ
Module lead resistance,
terminals - chip
1.6
mΩ
Storage temperature
-40
3
125
6
°C
Mounting torque for modul
mounting
M
- Mounting according to M5, Screw
valid application note
Nm
Weight
G
300
g
Note:
The current under continuous operation is limited to 50A rms per connector pin.
2
IGBT, Inverter
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
200
Unit
Collector-emitter voltage
VCES
ICDC
Tvj = 25 °C
TC = 70 °C
V
A
Continous DC collector
current
Tvj max = 175 °C
tP = 1 ms
Repetitive peak collector
current
ICRM
VGES
400
20
A
V
Gate-emitter peak voltage
Datasheet
3
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 200 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.55
1.69
1.77
5.80
3.34
0.75
40.3
0.14
TBD
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 4.6 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
nF
nF
mA
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
0.02
100
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
nA
µs
Turn-on delay time
(inductive load)
IC = 200 A, VCE = 600 V,
VGE = 15 V, RGon = 2.7 Ω
Tvj = 25 °C
0.203
0.226
0.239
0.094
0.097
0.099
0.351
0.414
0.433
0.103
0.198
0.262
25.1
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 200 A, VCE = 600 V,
VGE = 15 V, RGon = 2.7 Ω
µs
µs
µs
mJ
mJ
A
Turn-off delay time
(inductive load)
IC = 200 A, VCE = 600 V,
VGE = 15 V, RGoff = 2.7 Ω
Fall time (inductive load)
IC = 200 A, VCE = 600 V,
VGE = 15 V, RGoff = 2.7 Ω
Turn-on energy loss per
pulse
Eon
Eoff
ISC
IC = 200 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGon = 2.7 Ω, di/dt =
38.3
45.9
2050 A/µs (Tvj = 175 °C)
Turn-off energy loss per
pulse
IC = 200 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGoff = 2.7 Ω, dv/dt =
3250 V/µs (Tvj = 175 °C)
12.9
20.5
23.8
SC data
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
640
tP ≤ 7 µs,
Tvj = 175 °C
600
Datasheet
4
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per IGBT
0.231 K/W
Thermal resistance, case to
heatsink
per IGBT, λgrease= 1 W/(m*K)
0.0670 K/W
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
3
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continous DC forward
current
IF
200
400
A
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
3700
3050
A²s
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 200 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
79.6
105
TBD
V
Peak reverse recovery
current
VR = 600 V, IF = 200 A,
VGE = -15 V, -diF/dt =
2050 A/µs (Tvj = 175 °C)
A
118
Recovered charge
VR = 600 V, IF = 200 A,
VGE = -15 V, -diF/dt =
2050 A/µs (Tvj = 175 °C)
15.7
27.7
35.6
µC
Datasheet
5
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Reverse recovery energy
Erec
VR = 600 V, IF = 200 A,
VGE = -15 V, -diF/dt =
2050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
4.85
9.64
12.2
mJ
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per diode
0.376 K/W
Thermal resistance, case to
heatsink
per diode, λgrease= 1 W/(m*K)
0.0730 K/W
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
4
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
VRRM Tvj = 25 °C
Values
Unit
Repetitive peak reverse
voltage
1600
V
Maximum RMS forward
current per chip
IFRMSM TC = 110 °C
IRMSM TC = 110 °C
150
150
A
A
A
Maximum RMS current at
rectifier output
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
1800
1600
I2t - value
16200
12800
A²s
Table 8
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
Reverse current
VF
Ir
IF = 200 A
Tvj = 150 °C
1.01
1.4
V
Tvj = 150 °C, VR = 1600 V
per diode
mA
Thermal resistance, junction
to case
RthJC
0.278 K/W
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
0.0690 K/W
Datasheet
6
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
5 IGBT, Brake-Chopper
Table 8
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Temperature under
switching conditions
Tvj, op
-40
150
°C
5
IGBT, Brake-Chopper
Table 9
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
150
Unit
Collector-emitter voltage
VCES
Tvj = 25 °C
TC = 75 °C
V
A
Continous DC collector
current
ICDC
ICRM
VGES
Tvj max = 175 °C
tP = 1 ms
Repetitive peak collector
current
300
20
A
V
Gate-emitter peak voltage
Table 10
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 150 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.55
1.69
1.77
5.80
2.5
TBD
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 3.5 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
1
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
30.1
0.105
nF
nF
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
0.005 mA
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 150 A, VCE = 600 V,
VGE = 15 V, RGon = 5.6 Ω
Tvj = 25 °C
0.197
0.208
0.215
0.085
0.090
0.093
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
IC = 150 A, VCE = 600 V,
VGE = 15 V, RGon = 5.6 Ω
µs
Datasheet
7
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
6 Diode, Brake-Chopper
Table 10
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Turn-off delay time
tdoff
IC = 150 A, VCE = 600 V,
VGE = 15 V, RGoff = 5.6 Ω
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.419
0.502
0.521
0.113
0.208
0.272
12.2
µs
(inductive load)
Fall time (inductive load)
tf
IC = 150 A, VCE = 600 V,
VGE = 15 V, RGoff = 5.6 Ω
µs
mJ
mJ
A
Turn-on energy loss per
pulse
Eon
Eoff
ISC
IC = 150 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGon = 5.6 Ω, di/dt =
19.1
23.1
1150 A/µs (Tvj = 175 °C)
Turn-off energy loss per
pulse
IC = 150 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGoff = 5.6 Ω, dv/dt =
3100 V/µs (Tvj = 175 °C)
10.5
16.1
20.1
SC data
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
480
tP ≤ 7 µs,
Tvj = 175 °C
450
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per IGBT
0.290 K/W
0.0700 K/W
Thermal resistance, case to
heatsink
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
6
Diode, Brake-Chopper
Table 11
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continous DC forward
current
IF
75
A
A
Repetitive peak forward
current
IFRM
tP = 1 ms
150
Datasheet
8
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2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
7 NTC-Thermistor
Table 11
Maximum rated values (continued)
Symbol Note or test condition
Parameter
Values
450
Unit
I2t - value
I2t
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
A²s
370
Table 12
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 75 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
38.2
50.9
58.9
5.43
10.4
14.1
10
TBD
V
Peak reverse recovery
current
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
A
Recovered charge
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
µC
mJ
Reverse recovery energy
Erec
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
10
10
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per diode
0.728 K/W
K/W
Thermal resistance, case to
heatsink
per diode, λgrease= 1 W/(m*K)
0.0870
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
7
NTC-Thermistor
Table 13
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Rated resistance
Deviation of R100
Power dissipation
R25
ΔR/R
P25
TNTC = 25 °C
5
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
Datasheet
9
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2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
7 NTC-Thermistor
Table 13
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
B-value
B-value
B-value
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
K
K
K
Note:
Specification according to the valid application note.
Datasheet
10
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE
output characteristic (typical), IGBT, Inverter
IC = f(VCE
)
)
VGE = 15 V
Tvj = 175 °C
400
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
switching losses (typical), IGBT, Inverter
E = f(IC)
)
VCE = 20 V
RGoff = 2.7 Ω, RGon = 2.7 Ω, VCE = 600 V, VGE = 15 V
400
200
180
160
140
120
100
80
350
300
250
200
150
100
50
60
40
20
0
0
5
6
7
8
9
10
11
12
13
0
50
100 150 200 250 300 350 400
Datasheet
11
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
switching times (typical), IGBT, Inverter
E = f(RG)
t = f(IC)
IC = 200 A, VCE = 600 V, VGE
=
15 V
RGoff = 2.7 Ω, RGon = 2.7 Ω, VCE = 600 V, VGE
175 °C
= 15 V, Tvj =
220
200
180
160
140
120
100
80
10
1
0.1
0.01
60
40
20
0
0
5
10
15
20
25
30
0
50
100 150 200 250 300 350 400
switching times (typical), IGBT, Inverter
transient thermal impedance , IGBT, Inverter
t = f(RG)
Zth = f(t)
IC = 200 A, VCE = 600 V, VGE
= 15 V, Tvj = 175 °C
10
1
1
0.1
0.1
0.01
0.01
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
Datasheet
12
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
8 Characteristics diagrams
Voltage slope (typical), IGBT, Inverter
dv/dt = f(RG)
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE
)
IC = 200 A, VCE = 600 V, VGE
= 15 V, Tvj = 25 °C
RGoff = 2.7 Ω, VGE
= 15 V, Tvj = 175 °C
7
500
450
400
350
300
250
200
150
100
50
6
5
4
3
2
1
0
0
0
5
10
15
20
25
30
0
200
400
600
800 1000 1200 1400
capacity characteristic (typical), IGBT, Inverter
C = f(VCE
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
IC = 200 A, Tvj = 25 °C
1000
15
10
5
100
10
0
1
-5
0.1
0.01
-10
-15
0
10 20 30 40 50 60 70 80 90 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Datasheet
13
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 2.7 Ω, VCE = 600 V
400
350
300
250
200
150
100
50
16
14
12
10
8
6
4
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
50
100 150 200 250 300 350 400
switching losses (typical), Diode, Inverter
Erec = f(RG)
transient thermal impedance , Diode, Inverter
Zth = f(t)
VCE = 600 V, IF = 200 A
16
14
12
10
8
1
0.1
6
4
2
0
0.01
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
Datasheet
14
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Rectifier
transient thermal impedance , Diode, Rectifier
IF = f(VF)
Zth = f(t)
400
350
300
250
200
150
100
50
1
0.1
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.01
0.1
1
10
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE
VGE = 15 V
forward characteristic (typical), Diode, Brake-
Chopper
IF = f(VF)
)
300
150
250
200
150
100
50
125
100
75
50
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
15
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
Datasheet
16
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FP200R12N3T7_B11
™
EconoPIM 3 module
9 Circuit diagram
9
Circuit diagram
Figure 2
Datasheet
17
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FP200R12N3T7_B11
™
EconoPIM 3 module
10 Package outlines
10
Package outlines
Figure 3
Datasheet
18
0.10
2021-08-26
FP200R12N3T7_B11
™
EconoPIM 3 module
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
2021-08-26
Initial version
Datasheet
19
0.10
2021-08-26
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-08-26
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
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hereby disclaims any and all warranties and liabilities
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All Rights Reserved.
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Document reference
IFX-ABB747-001
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