FF1800R23IE7P_技术文档

FF1800R23IE7P

™

PrimePACK 3+ B-series module

™

PrimePACK 3+ B-series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and NTC / pre-applied

thermal interface material

Features

• Electrical features

- V_CES= 2300 V

- I_{C nom}= 1800 A / I_CRM= 3600 A

- TRENCHSTOP^TMIGBT7

- T_vj,op= 150°C

- Overload operation up to 175°C

- Low V_CE,sat

- Low switching losses

- High current density

- Low inductive design

• Mechanical features

- Package with CTI > 400

- High creepage and clearance distances

- High power density

- Pre-applied thermal interface material

Potential applications

• Three-level applications

• Solar applications

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

IGBT, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Diode, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

1

2

3

4

5

6

7

8

9

10

Datasheet

2

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

1 Package

1

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

4.0

Unit

Isolation test voltage

V_ISOL

RMS, f = 50 Hz

kV

Material of module

baseplate

Cu

Creepage distance

Clearance

d_Creepterminal to heatsink

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

36.0

28.0

21.0

19.0

> 400

mm

Clearance

Comparative tracking

index

Table 2

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

10

Unit

Min.

Max.

Stray inductance module

L_sCE

nH

Module lead resistance,

terminals - chip

R_AA'+CC'T_H=25°C, per switch

0.09

mΩ

Module lead resistance,

terminals - chip

R_CC'+EE'T_H=25°C, per switch

0.1

mΩ

Storage temperature

T_stg

-40

3

150

°C

Maximum baseplate

operation temperature

T_BPmax

Mounting torque for

module mounting

M

- Mounting according to M5, Screw

6

Nm

valid application note

Terminal connection

torque

- Mounting according to M4, Screw

1.8

8

2.1

10

valid application note

M8, Screw

Weight

G

1400

g

2

IGBT, Inverter

Table 3

Maximum rated values

Symbol Note or test condition

V_CES

Parameter

Values

2300

Unit

Collector-emitter voltage

T_vj= 25 °C

T_H= 45 °C

V

A

Implemented collector

current

I_CN

1800

Continuous DC collector

current

I_CDC

T_{vj max}= 150 °C

1420

A

(table continues...)

Datasheet

3

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

2 IGBT, Inverter

Table 3

(continued) Maximum rated values

Symbol Note or test condition

I_CRMt_plimited by T_{vj op}

Parameter

Values

Unit

Repetitive peak collector

current

3600

A

Gate-emitter peak voltage

V_GES

20

V

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.80

2.15

2.25

5.80

14.6

0.96

420

Unit

Min.

Max.

2.26

2.94

3.13

6.45

Collector-emitter

saturation voltage

V_{CE sat}I_C= 1800 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

V

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 49.5 mA, V_CE= V_GE, T_vj= 25 °C

5.15

V

V_GE= 15 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

f = 1000 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

nF

Reverse transfer

capacitance

C_res

0.5

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 2300 V, V_GE= 0 V

T_vj= 125 °C

30

mA

nA

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

400

Turn-on delay time

(inductive load)

I_C= 1800 A, V_CE= 1200 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.1 Ω

0.530

0.550

0.560

0.072

0.078

0.083

0.955

1.050

1.080

0.770

1.020

1.100

T_vj= 125 °C

T_vj= 150 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 1800 A, V_CE= 1200 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.1 Ω

µs

T_vj= 125 °C

T_vj= 150 °C

Turn-oﬀ delay time

(inductive load)

I_C= 1800 A, V_CE= 1200 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 1.5 Ω

T_vj= 125 °C

T_vj= 150 °C

Fall time (inductive load)

I_C= 1800 A, V_CE= 1200 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 1.5 Ω

T_vj= 125 °C

T_vj= 150 °C

Turn-on time (resistive

load)

t_{on_R}

I_C= 500 A, V_CE= 2000 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.1 Ω

0.79

(table continues...)

Datasheet

4

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

3 Diode, Inverter

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

570

Unit

Min.

Max.

Turn-on energy loss per

pulse

E_on

I_C= 1800 A, V_CE= 1200 V, T_vj= 25 °C

mJ

L_σ= 20 nH, V_GE= 15 V,

R_Gon= 0.1 Ω, di/dt =

T_vj= 125 °C

T_vj= 150 °C

815

915

17500 A/µs (T_vj= 150 °C)

Turn-oﬀ energy loss per

E_oﬀ

I_C= 1800 A, V_CE= 1200 V, T_vj= 25 °C

885

mJ

pulse

L_σ= 20 nH, V_GE= 15 V,

T_vj= 125 °C

1160

1240

8000

R_Goﬀ= 1.5 Ω, dv/dt =

4050 V/µs (T_vj= 150 °C)

T_vj= 150 °C

SC data

I_SC

V_GE≤ 15 V, V_CC= 1200 V, t_P≤ 7 µs,

V_CEmax=V_CES-L_sCE*di/dt T_vj=150 °C

A

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per IGBT, Valid with IFX pre-applied Thermal

Interface Material

27.4 K/kW

Temperature under

switching conditions

-40

150

°C

Note:

R_thJHmax. value is valid for T_C= 105 °C.

3

Diode, Inverter

Table 5

Maximum rated values

Parameter

Symbol Note or test condition

V_RRM

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

2300

V

Continuous DC forward

current

I_F

I_FRM

I²t

1800

3600

A

Repetitive peak forward

current

I²t - value

t_P= 1 ms

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 150 °C

220

205

kA²s

Maximum power

dissipation

P_RQM

2700

kW

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

3.25

Unit

Min.

Max.

3.64

3.33

3.22

Forward voltage

V_F

I_F= 1800 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

V

3.00

2.95

(table continues...)

Datasheet

5

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

4 IGBT, 3-Level

Table 6

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1700

1870

1880

300

Unit

Min.

Max.

Peak reverse recovery

current

I_RM

V_R= 1200 V, I_F= 1800 A, T_vj= 25 °C

A

V_GE= -15 V, -di_F/dt =

T_vj= 125 °C

T_vj= 150 °C

17500 A/µs (T_vj= 150 °C)

Recovered charge

Q_r

V_R= 1200 V, I_F= 1800 A, T_vj= 25 °C

µC

V_GE= -15 V, -di_F/dt =

17500 A/µs (T_vj= 150 °C)

T_vj= 125 °C

625

T_vj= 150 °C

740

Reverse recovery energy

E_rec

V_R= 1200 V, I_F= 1800 A, T_vj= 25 °C

240

mJ

V_GE= -15 V, -di_F/dt =

T_vj= 125 °C

500

17500 A/µs (T_vj= 150 °C)

T_vj= 150 °C

590

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per diode, Valid with IFX pre-applied

Thermal Interface Material

53.6 K/kW

Temperature under

switching conditions

-40

150

°C

Note:

R_thJHmax. value is valid for T_C= 90 °C.

4

IGBT, 3-Level

Table 7

Maximum rated values

Parameter

Symbol Note or test condition

V_CES

Values

2300

Unit

Collector-emitter voltage

T_vj= 25 °C

T_H= 45 °C

V

A

Implemented collector

current

I_CN

1800

Continuous DC collector

current

I_CDC

I_CRM

V_GES

T_{vj max}= 150 °C

1420

3600

20

A

V

Repetitive peak collector

current

t_plimited by T_{vj op}

Gate-emitter peak voltage

Table 8

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.80

Unit

Min.

Max.

2.26

2.94

3.13

6.45

Collector-emitter

saturation voltage

V_{CE sat}I_C= 1800 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

V

2.15

2.25

Gate threshold voltage

V_GEth

I_C= 49.5 mA, V_CE= V_GE, T_vj= 25 °C

5.15

5.80

V

(table continues...)

Datasheet

6

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

4 IGBT, 3-Level

Table 8

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

14.6

0.96

420

Unit

Min.

Max.

Gate charge

Q_G

R_Gint

C_ies

V_GE= 15 V

µC

Ω

Internal gate resistor

Input capacitance

T_vj= 25 °C

f = 1000 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

nF

Reverse transfer

capacitance

C_res

0.5

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 2300 V, V_GE= 0 V

T_vj= 125 °C

30

mA

nA

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

400

Turn-on delay time

(inductive load)

I_C= 1800 A, V_CE= 600 V, T_vj= 25 °C

V_GE= 15 V

0.555

0.580

0.590

0.190

0.205

0.215

0.885

0.955

0.980

0.630

0.875

0.930

240

T_vj= 125 °C

T_vj= 150 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 1800 A, V_CE= 600 V, T_vj= 25 °C

V_GE= 15 V

µs

T_vj= 125 °C

T_vj= 150 °C

Turn-oﬀ delay time

(inductive load)

I_C= 1800 A, V_CE= 600 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 1.5 Ω

T_vj= 125 °C

T_vj= 150 °C

Fall time (inductive load)

I_C= 1800 A, V_CE= 600 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 1.5 Ω

µs

T_vj= 125 °C

T_vj= 150 °C

Turn-on energy loss per

pulse

E_on

I_C= 1800 A, V_CE= 600 V, T_vj= 25 °C

mJ

L_σ= 50 nH, V_GE= 15 V,

T_vj= 125 °C

380

R_Gon= 0.1 Ω, di/dt =

T_vj= 150 °C

430

6700 A/µs (T_vj= 150 °C)

Turn-oﬀ energy loss per

pulse

E_oﬀ

I_C= 1800 A, V_CE= 600 V, T_vj= 25 °C

490

L_σ= 50 nH, V_GE= 15 V,

T_vj= 125 °C

630

R_Goﬀ= 1.5 Ω, dv/dt =

T_vj= 150 °C

665

3150 V/µs (T_vj= 150 °C)

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per IGBT, Valid with IFX pre-applied Thermal

Interface Material

27.4 K/kW

Temperature under

switching conditions

-40

150

°C

Note:

R_thJHmax. value is valid for T_C= 105 °C.

Datasheet

7

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

5 Diode, 3-Level

5

Diode, 3-Level

Table 9

Maximum rated values

Parameter

Symbol Note or test condition

V_RRM

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

2300

V

Continuous DC forward

current

I_F

1800

3600

A

Repetitive peak forward

current

I_FRM

t_P= 1 ms

Table 10

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

3.25

3.00

2.95

1120

1450

1530

295

Unit

Min.

Max.

3.64

3.33

3.22

Forward voltage

V_F

I_RM

Q_r

I_F= 1800 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

V

Peak reverse recovery

current

V_R= 600 V, I_F= 1800 A,

V_GE= -15 V, -di_F/dt =

8200 A/µs (T_vj= 150 °C)

A

Recovered charge

V_R= 600 V, I_F= 1800 A,

V_GE= -15 V, -di_F/dt =

8200 A/µs (T_vj= 150 °C)

µC

mJ

580

665

Reverse recovery energy

E_rec

V_R= 600 V, I_F= 1800 A,

V_GE= -15 V, -di_F/dt =

8200 A/µs (T_vj= 150 °C)

170

320

365

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per diode, Valid with IFX pre-applied

Thermal Interface Material

53.6 K/kW

150 °C

Temperature under

switching conditions

-40

Note:

Dynamic data for 3-level valid in conjunction with FF2400RB12IP7.

T_{vj op}up to 175 °C is allowed for operations in overload conditions. For detailed specifications please refer to

AN2021-11.

R_thJHmax. value is valid for T_C= 90 °C.

Datasheet

8

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

6 NTC-Thermistor

6

NTC-Thermistor

Table 11

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

5

Unit

Min.

Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

B-value

R₂₅

T_NTC= 25 °C

kΩ

%

ΔR/R

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

5

P₂₅

20

mW

K

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

B-value

K

B-value

K

Note:

For detailed specifications please refer to AN2009-10.

Datasheet

9

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

7 Characteristics diagrams

7

Characteristics diagrams

Output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

V_GE= 15 V

Output characteristic field (typical), IGBT, Inverter

I_C= f(V_CE

T_vj= 150 °C

)

3600

3400

3200

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

3400

3200

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

600

400

200

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

V_CE= 20 V

Switching losses (typical), IGBT, Inverter

E = f(I_C)

)

R_Goﬀ= 1.5 Ω, R_Gon= 0.1 Ω, V_CE= 1200 V, V_GE

= 15 V

3600

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

3400

3200

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

600

400

200

400

200

0

4

5

6

7

8

9

10

11

12

0

600

1200

1800

2400

3000

3600

Datasheet

10

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

7 Characteristics diagrams

Switching losses (typical), IGBT, Inverter

Switching times (typical), IGBT, Inverter

E = f(R_G)

t = f(I_C)

I_C= 1800 A, V_CE= 1200 V, V_GE

=

15 V

R_Goﬀ= 1.5 Ω, R_Gon= 0.1 Ω, V_CE= 1200 V, V_GE

150 °C

= 15 V, T_vj=

2000

1800

1600

1400

1200

1000

800

10

1

0.1

0.01

600

400

200

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15

0

600

1200

1800

2400

3000

3600

Switching times (typical), IGBT, Inverter

Transient thermal impedance , IGBT, Inverter

t = f(R_G)

Z_th= f(t)

V_CE= 1200 V, V_GE

= 15 V, I_C= 1800 A, T_vj= 150 °C

10

100

10

1

0.1

0.01

0.1

0.001

0

1

2

3

4

5

6

7

8

9 10 11 12 13 14 15

0.01

0.1

1

10

Datasheet

11

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

7 Characteristics diagrams

Reverse bias safe operating area (RBSOA), IGBT,

Inverter

Gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

I_C= 1800 A, T_vj= 25 °C

I_C= f(V_CE

)

R_Goﬀ= 1.5 Ω, V_GE= 15 V, T_vj= 150 °C

4200

15

12

9

3600

3000

2400

1800

1200

600

6

3

0

-3

-6

-9

-12

-15

0

400

800

1200

1600

2000

2400

0

1

2

3

4

5

6

7

8

9 10 11 12 13 14 15

Forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

Switching losses (typical), Diode, Inverter

E_rec= f(I_F)

V_CE= 1200 V, R_Gon= R_Gon(IGBT)

3600

3400

3200

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

700

600

500

400

300

200

100

0

600

400

200

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8

0

600

1200

1800

2400

3000

3600

Datasheet

12

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

7 Characteristics diagrams

Switching losses (typical), Diode, Inverter

E_rec= f(R_G)

Transient thermal impedance, Diode, Inverter

Z_th= f(t)

I_F= 1800 A, V_CE= 1200 V

700

650

600

550

500

450

400

350

300

250

200

150

100

50

100

10

1

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0.001

0.01

0.1

1

10

Safe operating area (SOA), Diode, Inverter

Switching losses (typical), IGBT, 3-Level

I_R= f(V_R)

E = f(I_C)

T_vj= 150 °C

R_Goﬀ= 1.5 Ω, R_Gon= 0.1 Ω, V_CE= 600 V, V_GE= 15 V

4200

3600

3000

2400

1800

1200

600

2000

1800

1600

1400

1200

1000

800

600

400

200

0

400

800

1200

1600

2000

2400

0

600

1200

1800

2400

3000

3600

Datasheet

13

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

7 Characteristics diagrams

Switching losses (typical), IGBT, 3-Level

Switching times (typical), IGBT, 3-Level

E = f(R_G)

t = f(I_C)

I_C= 1800 A, V_CE= 600 V, V_GE

=

15 V

R_Goﬀ= 1.5 Ω, R_Gon= 0.1 Ω, V_CE= 600 V, V_GE

150 °C

= 15 V, T_vj=

1200

1100

1000

900

800

700

600

500

400

300

200

100

0

10

1

0.1

0.01

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15

0

600

1200

1800

2400

3000

3600

Switching times (typical), IGBT, 3-Level

t = f(R_G)

Switching losses (typical), Diode, 3-Level

E_rec= f(I_F)

I_C= 1800 A, V_CE= 600 V, V_GE

=

15 V, T_vj= 150 °C

V_CE= 600 V, R_Gon= R_Gon(IGBT)

10

500

450

400

350

300

250

200

150

100

50

1

0.1

0.01

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15

0

600

1200

1800

2400

3000

3600

Datasheet

14

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

7 Characteristics diagrams

Switching losses (typical), Diode, 3-Level

E_rec= f(R_G)

Temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

V_CE= 600 V, I_F= 1800 A

500

450

400

350

300

250

200

150

100

50

100000

10000

1000

100

0

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

25

50

75

100

125

150

175

Datasheet

15

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

8 Circuit diagram

8

Circuit diagram

Figure 1

Datasheet

16

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

9 Package outlines

9

Package outlines

C

(247)

screwing depth

max. 8mm 8x

26

0,35ADE

E

m

3c0,1

8x (M4)

8x max. (2)

recommended design height

36,5

1,2ADE

m

q0,35ABC

m

8x

2,5

0,5

0

Y

X

screwing depth

max. 16mm 8x

8x max. (3)

recommended design height

36,5

0,8ADE

m

14x q5,5c0,1

8x

q0,5ADE

m

14x

B

38,25

D

q0,35ABC

117

8x (M8)

q1,8ADE

m

8x

m

8x

M

8x q5

q0,4 CZA

A

m

250c1

~

8x

36,5

18,2

K

Y

X

H

' K

0

g 0,2AM-M

H

16,7

restricted area for Thermal Interface Material

232

36,5

Dimension in mounted condition ISO 10579

Terminal heights measurement at the end of bending radius

Figure 2

Datasheet

17

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

10 Module label code

10

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

15

30

Example

71549142846550549911530

Figure 3

Datasheet

18

Revision 1.00

2022-05-03

FF1800R23IE7P

™

PrimePACK 3+ B-series module

Revision history

Document revision

Date of release Description of changes

1.00

2022-05-03

Final datasheet

Datasheet

19

Revision 1.00

2022-05-03

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-05-03

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Please note that this product is not qualified

according to the AEC Q100 or AEC Q101 documents

of the Automotive Electronics Council.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Warnings

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

©

2022 Infineon Technologies AG

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Document reference

IFX-AAY190-008

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.


型号：	FF1800R23IE7P
厂家：	Infineon
描述：	TIM
文件：	总20页 (文件大小：704K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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