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F3L100R07W2E3B11BOMA1 [INFINEON]

Insulated Gate Bipolar Transistor, 117A I(C), 650V V(BR)CES, N-Channel, MODULE-34;

F3L100R07W2E3B11BOMA1


元器件型号：	F3L100R07W2E3B11BOMA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 117A I(C), 650V V(BR)CES, N-Channel, MODULE-34 局域网栅功率控制晶体管
PDF文件：	总11页 (文件大小：764K)
下载文档：	下载PDF数据表文档文件
型号参数：F3L100R07W2E3B11BOMA1参数

F3L100R12W2H3_B11

Insulated Gate Bipolar Transistor,

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0 INFINEON

F3L100R12W2H3B11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-32

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0 INFINEON

F3L150R07W2E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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691 INFINEON

F3L150R07W2E3_B11

Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, MODULE-34

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14 INFINEON

F3L150R07W2E3-B11

150A, 650V, N-CHANNEL IGBT, MODULE-34

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3 INFINEON

F3L150R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON

F3L150R12W2H3_B11

Insulated Gate Bipolar Transistor,

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1 INFINEON

F3L200R07PE4

EasyPACK4 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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37 INFINEON

F3L200R07PE4BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

F3L200R12W2H3B11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-32

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1 INFINEON

F3L300R07PE4

EasyPACK module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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119 INFINEON

F3L30R06W1E3_B11

EasyPACK module with Trench/Feldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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43 INFINEON

F3L30R06W1E3-B11

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

F3L30R06W1E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON

F3L400R12PT4B26BOSA1

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES

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1 INFINEON

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