概述
规格参数
数据手册
替代型号ESD0P8RFL 概述
RF ESD Protection Diodes 射频ESD保护二极管 TVS二极管 瞬态抑制器
ESD0P8RFL 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | End Of Life | 零件包装代码： | DFN |
| 包装说明： | 1.20 X 0.80 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, LEADLESS PACKAGE-4 | 针数： | 2 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.75 |
| Is Samacsys： | N | 最大钳位电压： | 12 V |
| 配置： | SEPARATE, 2 ELEMENTS | 二极管元件材料： | SILICON |
| 二极管类型： | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码： | R-PDSO-N4 |
| 湿度敏感等级： | 1 | 元件数量： | 2 |
| 端子数量： | 4 | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性： | UNIDIRECTIONAL |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 50 V |
| 子类别： | Transient Suppressors | 表面贴装： | YES |
| 技术： | AVALANCHE | 端子形式： | NO LEAD |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| Base Number Matches： | 1 |
ESD0P8RFL 数据手册
通过下载ESD0P8RFL数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载ESD0P8RFL
RF ESD Protection Diodes
• ESD protection of RF antenna /
interfaces or ultra high speed data lines acc. to:
IEC61000-4-2 (ESD): 20 kV (air / contact)
IEC61000-4-4 (EFT): 40 A (5/50 ns)
IEC61000-4-5 (surge): 10 A (8/20 µs)
• Very low line capacitance: 0.8 pF @ 1 GHz
( 0.4 pF per diode)
• Ultra low series inductance: 0.4 nH per diode
• Very low clamping voltage
• Ultra small leadless package 1.2 x 0.8 x 0.39 mm
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Applications in anti-parallel configuration
• For low RF signal levels without superimposed
DC voltage: e.g. GPS, XM-Radio, Sirius, DVB,
DMB, DAB, Remote Keyless Entry
Applications in rail-to-rail configuration
• For high RF signal levels or low RF signal levels
with superimposed DC voltage: e.g. HDMI, S-ATA,
Gbit Ethernet
• For more technical details on ESD and Antenna
protection please refer to Application Note
No.103 on www.infineon.com/tvsdiodes
ESD0P8RFL
4
3
D1
D2
1
2
Type
ESD0P8RFL
Package
TSLP-4-7
Configuration
anti-parallel
Marking
E8
2009-02-19
1
ESD0P8RFL
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
ESD contact discharge
Peak pulse current (t = 8 / 20 µs)
Symbol
V
ESD
I
pp
Value
20
10
Unit
kV
A
1)
2)
p
°C
Operating temperature range
Storage temperature
T
T
-55...150
-65...150
op
stg
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics -
Reverse working voltage
3)
-
-
-
-
50
100 nA
V
V
I
R
RWM
3)
Reverse current
V = 50 V
R
2)
Forward clamping voltage
= 10 A
V
-
-
12
15
-
V
FC
I
PP
4)
0.8
pF
Line capacitance
V = 0 V, f = 1 GHz
C
T
R
Series inductance (per diode)
L
-
0.4
-
nH
S
1V
according to IEC61000-4-2, only valid in anti-parallel or rail-to-rail connection.
ESD
Please refer to the application examples.
2I according to IEC61000-4-5, only valid in anti-parallel or rail-to-rail connection.
pp
Please refer to the application examples.
3Only valid in rail-to-rail configuration withV
≥V
RWM
CC
4Total capacitance line to ground (2 diodes in parallel)
2009-02-19
2
ESD0P8RFL
Forward clamping voltage V = ƒ(I )
Reverse current I = ƒ(V )
R R
FC
PP
t = 8 / 20 µs
T = Parameter
p
A
leakage in rail-to-rail configuration
10 -5
12
V
A
125°C
10 -6
10
9
8
7
6
5
4
3
2
1
0
85°C
10 -7
10 -8
25°C
10 -9
10 -10
10 -11
-40°C
10 -12
A
V
1
2
3
4
5
6
7
8
10
0
10
20
30
40
50
70
I
V
R
pp
Forward current I = ƒ (V )
Line capacitance C = ƒ (f)
T
F
F
T = Parameter
V = 0 V
A
R
leakage in anti-parallel configuration
100
µA
1.5
60
125°C
85°C
40
pF
25°C
20
-40°C
0
-40°C
25°C
-20
0.5
85°C
125°C
-40
-60
-80
-100
0
0
mV
MHz
-600
-400
-200
0
200
600
500
1000
1500
2000
3000
V
f
F
2009-02-19
3
ESD0P8RFL
2
Insertion loss I = -|S | = ƒ(f)
L
21
V = 0 V, Z = 50 Ω
R
0
dB
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
MHz
0
500
1000
1500
2000
3000
f
2009-02-19
4
ESD0P8RFL
1. Application example
1 RF signal channel, anti-parallel configuration,
please refer also to Application Note No.103
1 protected signal line,
The protection diode should be
placed very close to the location
where the ESD or other transients
can occur to keep loops and
inductances as small as possible.
Grounded pins should be
superimposed DC voltage up to
±VF (diode forward volatge)
ESD
sensitive
circuit
I/O
connected in parallel directly to a
ground plane on the board.
Line to ground capacitance
0.8 pF @1 GHz
2. Application example
1 RF signal channel, rail-to-rail configuration
1 protected signal line,
superimposed DC voltage up to
+Vcc (voltage supply)
Cathode of one diode should be
connected to the positive supply
voltage +Vcc and anode of the
opposite diode should be
ESD
sensitive
circuit
I/O
connected directly to a ground
plane on the board. Clamped
input voltage at I/O port is limited
to Vcc + VF at positive transients
and 0V - VF at negative transients
(VF ... diode forward voltage
drop).
Line to ground capacitance
0.8 pF @1 GHz
+Vcc
2009-02-19
5
Package TSLP-4-7
ESD0P8RFL
Package Outline
Top view
Bottom view
+0.01
0.39
-0.03
0.05
0.8
1)
0.035
4x0.25
0.05 MAX.
2
3
3
2
4
1
1
4
0.05
0.45
Pin 1 marking
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.8
0.78
0.28
0.3
0.28
0.3
0.22
0.2
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BAR90-07LRH
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
4
Pin 1
marking
1.05
2009-02-19
6
ESD0P8RFL
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2009-02-19
7
ESD0P8RFL 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| ESD0P8RFL-E6327 | INFINEON | Trans Voltage Suppressor Diode, 50V V(RWM), Unidirectional, 2 Element, Silicon, 1.20 X 0.80 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, LEADLESS, TSLP-4-7, 4 PIN | 获取价格 |
|
| ESD10 | COOPER | Circuit Protection Solutions Low Voltage Fuse Links Catalogue | 获取价格 |
|
| ESD1000 | ETC | OEM Bluetooth-Serial Module | 获取价格 |
|
| ESD1000SK | ETC | OEM Bluetooth-Serial Module | 获取价格 |
|
| ESD100V2 | ETC | Bluetooth-serial Module | 获取价格 |
|
| ESD100V2-01 | ETC | Bluetooth-serial Module | 获取价格 |
|
| ESD100V2SK-02 | ETC | Bluetooth-serial Module | 获取价格 |
|
| ESD101-B1-02 | INFINEON | Bi-directional, 5.5 V, 0.1 pF, 0201, 0402, RoHS and Halogen Free compliant | 获取价格 |
|
| ESD101-B1-02EL | INFINEON | TVS (Transient Voltage Suppressor) | 获取价格 |
|
| ESD101-B1-02ELS | INFINEON | TVS (Transient Voltage Suppressor) | 获取价格 |
|
ESD0P8RFL 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
