DDB6U50N22W1RP_B11 [INFINEON]

EasyBRIDGE 1 2200 V, 50 A Diode Bridge Module with 1700 V TRENCHSTOP™ IGBT4 Brake Chopper, PressFIT contact technology and pre-applied Thermal Interface Material. The DDB6U50N22W1RP_B11 extends the current easy drive rectifier diode portfolio up to 2.2 kV.;


型号：	DDB6U50N22W1RP_B11
厂家：	Infineon
描述：	EasyBRIDGE 1 2200 V, 50 A Diode Bridge Module with 1700 V TRENCHSTOP™ IGBT4 Brake Chopper, PressFIT contact technology and pre-applied Thermal Interface Material. The DDB6U50N22W1RP_B11 extends the current easy drive rectifier diode portfolio up to 2.2 kV. 双极性晶体管
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中文：	中文翻译
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DDB6U50N22W1RP_B11

EasyBRIDGE module

EasyBRIDGE module with chopper configuration and PressFIT / pre-applied thermal interface material

Features

• Electrical features

- V_CES= 1700 V

- I_{C nom}= 50 A / I_CRM= 100 A

- T_vj,op= 150°C

- Trench IGBT 4

- 2.2 kV rectifier diodes

• Mechanical features

- Al₂O₃substrate with low thermal resistance

- 4 kV AC 1 min insulation

- PressFIT contact technology

- Compact design

- Rugged mounting due to integrated mounting clamps

- Pre-applied thermal interface material

Potential applications

• Motor drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

Diode, Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

1 Package

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

4.0

Unit

Isolation test voltage

Internal isolation

Creepage distance

Clearance

V_ISOL

RMS, f = 50 Hz, t = 1 min

basic insulation (class 1, IEC 61140)

Al₂O₃

11.5

6.3

d_Creepterminal to heatsink

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

10.0

5.0

Clearance

Comparative tracking

index

> 200

Relative thermal index

(electrical)

RTI

housing

140

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Stray inductance module

L_sCE

Module lead resistance,

terminals - chip

R_AA'+CC'T_H=25°C, per switch

3.4

mΩ

Module lead resistance,

terminals - chip

R_CC'+EE'T_H=25°C, per switch

mΩ

Storage temperature

T_stg

-40

125

°C

Maximum baseplate

operation temperature

T_BPmax

Mounting force per clamp

Weight

Note:

The current under continuous operation is limited to 25 A_rmsper connector pin.

Storage and shipment of modules with TIM => see AN 2012-07

IGBT-Chopper

Table 3

Maximum rated values

Parameter

Symbol Note or test condition

Values

1700

Unit

Collector-emitter voltage

V_CES

I_CN

T_vj= 25 °C

Implemented collector

current

(table continues...)

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

2 IGBT-Chopper

Table 3

(continued) Maximum rated values

Symbol Note or test condition

Parameter

Values

Unit

Continuous DC collector

current

I_CDC

I_CRM

V_GES

T_{vj max}= 150 °C

T_H= 65 °C

Repetitive peak collector

current

t_plimited by T_{vj op}

100

Gate-emitter peak voltage

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.95

2.35

2.45

5.80

0.6

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_{CE sat}I_C= 50 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

2.40

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 2 mA, V_CE= V_GE, T_vj= 25 °C

5.25

6.35

V_GE= 15 V, V_CC= 900 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

9.5

f = 1000 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

4.5

Reverse transfer

capacitance

C_res

0.15

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 1700 V, V_GE= 0 V

T_vj= 25 °C

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

Turn-on delay time

(inductive load)

I_C= 50 A, V_CC= 900 V,

V_GE= 15 V, R_Gon= 1 Ω

T_vj= 25 °C

1.240

1.390

1.430

0.350

0.410

0.420

0.380

0.520

0.560

0.290

0.530

0.610

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 50 A, V_CC= 900 V,

V_GE= 15 V, R_Gon= 1 Ω

µs

Turn-oﬀ delay time

(inductive load)

I_C= 50 A, V_CC= 900 V,

V_GE= 15 V, R_Goﬀ= 1 Ω

Fall time (inductive load)

I_C= 50 A, V_CC= 900 V,

V_GE= 15 V, R_Goﬀ= 1 Ω

(table continues...)

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

3 Diode, Chopper

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

11.4

15.7

Unit

Min.

Max.

Turn-on energy loss per

pulse

E_on

I_C= 50 A, V_CC= 900 V,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

L = 35 nH, V_GE= 15 V,

R_Gon= 1 Ω, di/dt = 960

A/µs (T_vj= 150 °C)

Turn-oﬀ energy loss per

pulse

E_oﬀ

I_C= 50 A, V_CC= 900 V,

9.1

L = 35 nH, V_GE= 15 V,

15.3

17.3

240

R_Goﬀ= 1 Ω, dv/dt = 2850

V/µs (T_vj= 150 °C)

SC data

I_SC

V_GE≤ 15 V, V_CC= 1000 V, t_P≤ 10 µs,

V_CEmax=V_CES-L_sCE*di/dt T_vj=150 °C

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per IGBT, Valid with IFX pre-applied Thermal

Interface Material

0.711 K/W

Temperature under

switching conditions

-40

150

°C

Diode, Chopper

Table 5

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

1700

Continuous DC forward

current

I_F

I_FRM

I²t

Repetitive peak forward

current

I²t - value

t_P= 1 ms

100

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 150 °C

425

390

A²s

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.80

1.90

1.95

Unit

Min.

Max.

Forward voltage

V_F

I_F= 50 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

2.20

Peak reverse recovery

current

I_RM

V_CC= 900 V, I_F= 50 A,

V_GE= -15 V, -di_F/dt = 960

A/µs (T_vj= 150 °C)

46.6

47.6

(table continues...)

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

4 Diode, Rectifier

Table 6

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

11.6

19.3

21.5

6.6

Unit

Min.

Max.

Recovered charge

Q_r

V_CC= 900 V, I_F= 50 A,

V_GE= -15 V, -di_F/dt = 960

A/µs (T_vj= 150 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

µC

Reverse recovery energy

E_rec

V_CC= 900 V, I_F= 50 A,

V_GE= -15 V, -di_F/dt = 960

A/µs (T_vj= 150 °C)

11.4

12.8

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per diode, Valid with IFX pre-applied

Thermal Interface Material

1.09

150

K/W

°C

Temperature under

switching conditions

-40

Diode, Rectifier

Table 7

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

2200

Maximum RMS forward

current per chip

I_FRMSMT_H= 65 °C

I_RMSMT_H= 65 °C

Maximum RMS current at

rectifier output

Surge forward current

I_FSM

I²t

t_P= 10 ms

T_vj= 125 °C

T_vj= 150 °C

T_vj= 125 °C

T_vj= 150 °C

250

235

320

285

I²t - value

A²s

Table 8

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.22

1.20

Unit

Min.

Max.

Forward voltage

V_F

I_F= 50 A

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

Reverse current

I_r

T_vj= 150 °C, V_R= 1760 V

Thermal resistance,

junction to heat sink

R_thJH

per diode, Valid with IFX pre-applied

Thermal Interface Material

1.57

K/W

(table continues...)

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

4 Diode, Rectifier

Table 8

(continued) Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

Unit

Min.

Max.

Temperature under

switching conditions

T_{vj, op}

-40

150

°C

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

5 Characteristics diagrams

Characteristics diagrams

Output characteristic (typical), IGBT-Chopper

I_C= f(V_CE

Output characteristic field (typical), IGBT-Chopper

I_C= f(V_CE

)

V_GE= 15 V

T_vj= 150 °C

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transfer characteristic (typical), IGBT-Chopper

I_C= f(V_GE

Transient thermal impedance , IGBT-Chopper

Z_th= f(t)

)

V_CE= 20 V

100

0.1

0.01

0.001

0.01

0.1

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

5 Characteristics diagrams

Reverse bias safe operating area (RBSOA), IGBT-

Chopper

Forward characteristic (typical), Diode, Chopper

I_F= f(V_F)

I_C= f(V_CE

)

R_Goﬀ= 1 Ω, V_GE= 15 V, T_vj= 150 °C

120

100

110

100

200 400 600 800 1000 1200 1400 1600 1800

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Transient thermal impedance, Diode, Chopper

Forward characteristic (typical), Diode, Rectifier

Z_th= f(t)

I_F= f(V_F)

100

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.001

0.01

0.1

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

5 Characteristics diagrams

Transient thermal impedance, Diode, Rectifier

Z_th= f(t)

0.1

0.01

0.001

0.01

0.1

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

6 Circuit diagram

Circuit diagram

Figure 1

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

7 Package outlines

Package outlines

Infineon

Figure 2

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

8 Module label code

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

Example

71549142846550549911530

Figure 3

Datasheet

Revision 1.00

2022-09-05

DDB6U50N22W1RP_B11

EasyBRIDGE module

Revision history

Document revision

Date of release Description of changes

0.10

0.20

1.00

2021-09-21

2022-07-29

2022-09-05

Initial version

Preliminary datasheet

Final datasheet

Datasheet

Revision 1.00

2022-09-05

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-09-05

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Warnings

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

a written document signed by

2022 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-ABB286-003

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

DDB6U50N22W1RP_B11 [INFINEON]

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