C67078-A5008-A2 [INFINEON]
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic); TEMPFET （N沟道增强型温度传感器晶闸管特性）
| 型号： | C67078-A5008-A2 |
| 厂家： | 
Infineon |
| 描述： | TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
| 文件： | 总9页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TEMPFET
BTS 110
Features
● N channel
● Enhancement mode
● Temperature sensor with thyristor characteristic
● The drain pin is electrically shorted to the tab
3
2
1
Pin
1
2
3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BTS 110
100 V
10 A
0.2 Ω
TO-220AB
C67078-A5008-A2
Maximum Ratings
Parameter
Symbol
Values
100
Unit
Drain-source voltage
VDS
VDGR
VGS
ID
V
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
100
± 20
10
Continuous drain current, TC = 25 °C
A
ISO drain current
ID-ISO
1.75
TC = 85 °C, VGS = 10 V, VDS = 0.5 V
Pulsed drain current,
Short circuit current,
TC = 25 °C
Tj = – 55 ... + 150 °C
ID puls
ISC
40
37
Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
500
40
W
PSCmax
Ptot
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Tj, Tstg
–
– 55 ... + 150
E
°C
–
–
55/150/56
Thermal resistance
Chip-case
Chip-ambient
K/W
Rth JC
Rth JA
≤ 3.1
≤ 75
Semiconductor Group
1
04.97
BTS 110
Electrical Characteristics
at T = 25 °C, unless otherwise specified.
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS(th)
IDSS
V
V
GS = 0, ID = 1 mA
Gate threshold voltage
GS = VDS, ID = 1 mA
Zero gate voltage drain current
GS = 0 V, VDS = 100 V
100
2.5
–
–
V
3.0
3.5
µA
V
Tj = 25 °C
Tj = 125 °C
–
–
1
100
10
300
Gate-source leakage current
GS = 20 V, VDS = 0
IGSS
V
Tj = 25 °C
Tj = 150 °C
–
–
10
2.0
100
4.0
nA
µA
Drain-source on-state resistance
GS = 10 V, ID = 5 A
RDS(on)
Ω
V
–
0.17
0.2
Dynamic Characteristics
Forward transconductance
gfs
S
V
DS ≥ 2 × ID × RDS(on)max, ID = 5 A
Input capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
2.7
–
3.8
8.0
Ciss
Coss
Crss
pF
V
450
150
600
240
V
–
V
–
–
–
80
20
45
130
30
td(on)
tr
ns
V
R
CC = 30 V, VGS = 10 V, ID = 2.9 A,
GS = 50 Ω
70
Turn-off time toff, (toff = td(off) + tf)
td(off)
tf
–
–
70
55
90
70
V
R
CC = 30 V, VGS = 10 V, ID = 2.9 A,
GS = 50 Ω
Semiconductor Group
2
BTS 110
Electrical Characteristics (cont’d)
at T = 25 °C, unless otherwise specified.
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Continuous source current
Pulsed source current
IS
–
–
–
–
10
40
A
ISM
VSD
Diode forward on-voltage
V
IF = 20 A, VGS = 0
–
–
–
1.3
1.6
–
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V
trr
ns
µC
170
0.30
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V
Qrr
–
Temperature Sensor
Forward voltage
VTS(on)
V
I
TS(on) = 10 mA, T = – 55 ... + 150 °C
–
–
1.4
–
1.5
10
j
Sensor override, tp ≤ 100 µs, f ≤ 1 kHz
T = – 55 ... + 160 °C
j
Forward current
ITS(on)
mA
T = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
T = – 55 ... + 160 °C
j
–
–
–
–
10
j
600
Holding current, VTS(off) = 5 V, Tj = 25 °C
Tj = 150 °C
IH
0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
VTS = 5 V
TTS(on)
toff
°C
µs
150
0.5
–
–
–
Turn-off time
VTS = 5 V, ITS(on) = 2 mA
2.5
Semiconductor Group
3
BTS 110
Examples for short-circuit protection
at T = – 55 ... + 150 °C, unless otherwise specified.
j
Parameter
Symbol
Examples
2
Unit
1
–
Drain-source voltage
Gate-source voltage
Short-circuit current
Short-circuit dissipation
Response time
VDS
VGS
ISC
15
30
–
–
–
–
V
7.3
33.3
500
5.5
16.6
500
A
PSC
tSC(off)
W
ms
T = 25 °C, before short circuit
j
30
30
–
Short-circuit protection ISC = f (VDS)
Parameter: VGS
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj = – 55 ... + 150 °C
DiagramtodetermineISC forTj =–55...+150°C
Semiconductor Group
4
BTS 110
Max. power dissipation Ptot = f (TC)
Typ. drain-source on-state resistance
DS(on) = f (ID)
R
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp = 80 µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5
BTS 110
Drain-source on-state resistance
DS(on) = f (Tj)
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA
R
Parameter: ID = – 5 A, VGS = 10 V
(spread)
Typ. transfer characteristic
ID = f (VGS)
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
6
BTS 110
Continuous drain current ID = f (TC)
Parameter: VGS ≥ 10 V
Forward characteristics of reverse diode
IF = f (VSD)
Parameter: Tj, tp = 80 µs (spread)
Typ. gate-source leakage current
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f = 1 MHz
IGSS = f (TC)
Parameter: VGS = 20 V, VDS = 0
Semiconductor Group
7
BTS 110
Transient thermal impedance ZthJC = f (tp)
Parameter: D = tp/T
Semiconductor Group
8
BTS 110
Package Outlines
TO 220 AB
Ordering Code
TO 220 AB
Ordering Code
Standard
C67078-A5008-A2
SMD version E3045
C67078-A5008-A4
9.9
9.5
4.4
1.3
3.7
1)
0.75
2.54
0.5
2.4
1.05
2.54
GPT05155
1) punch direction, burr max. 0.04
2) dip tinning
3) max. 14.5 by dip tinning press burr max. 0.05
Semiconductor Group
9
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