C67076-S1018-A2 [INFINEON]
SIMOPAC Module (Power module Single switch N channel Enhancement mode); SIMOPAC模块（电源模块，单开关N沟道增强模式）
| 型号： | C67076-S1018-A2 |
| 厂家： | 
Infineon |
| 描述： | SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIMOPAC® Module
BSM 101 AR
VDS
I D
= 50 V
= 200 A
R DS(on) = 3.0 mΩ
● Power module
● Single switch
● N channel
● Enhancement mode
● Package with insulated metal base plate
● Package outline/Circuit diagram: 11)
Type
Ordering Code
BSM 101 AR
C67076-S1018-A2
Maximum Ratings
Parameter
Symbol
VDS
VDGR
VGS
ID
Values
Unit
Drain-source voltage
50
V
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
50
± 20
Continuous drain current, TC = 105 ˚C
Pulsed drain current, TC = 105 ˚C
Operating and storage temperature range
Power dissipation, TC = 25 ˚C
Thermal resistance, chip-case
Insulation test voltage2), t = 1 min.
Creepage distance, drain-source
Clearance, drain-source
200
A
ID puls
Tj, Tstg
Ptot
600
– 55 … + 150
˚C
700
W
RthJC
Vis
≤ 0.18
2500
16
K/W
Vac
mm
–
–
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
–
F
–
–
55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
2)
Semiconductor Group
17
03.96
BSM 101 AR
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS
VGS(th)
IDSS
V
50
–
–
Gate threshold voltage
V
GS = VDS, ID = 1 mA
2.1
3.0
4.0
Zero gate voltage drain current
VDS = 50 V, VGS = 0
Tj = 25 ˚C
µA
–
–
50
300
250
1000
Tj = 125 ˚C
Gate-source leakage current
IGSS
nA
V
GS = 20 V, VDS = 0
Drain-source on-state resistance
GS = 10 V, ID = 200 A
–
–
10
100
RDS(on)
mΩ
V
2.6
3.0
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on) max., ID = 200 A
gfs
156
–
200
18
9
–
S
Input capacitance
Ciss
24
12
4
nF
V
GS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Turn-on Time ton (ton = td (on) + tr)
CC = 40 V, VGS = 10 V
C
oss
–
V
C
rss
–
3
V
–
–
280
220
–
–
ns
td (on)
tr
V
ID = 200 A, RG = 3.3 Ω
Turn-off Time toff (toff = td (off) + tf)
–
–
220
60
–
–
td (off)
tf
V
CC = 40 V, VGS = 10 V
ID = 200 A, RG = 3.3 Ω
Semiconductor Group
18
BSM 101 AR
Electrical Characteristics (cont’d)
at T = 25 ˚C, unless otherwise specified.
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse diode
Continuous reverse drain current
IS
A
TC = 25 ˚C
–
–
–
200
Pulsed reverse drain current
TC = 25 ˚C
ISM
VSD
trr
–
600
Diode forward on-voltage
IF = 400 A , VGS = 0
V
1.25
400
3.5
1.6
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V
ns
–
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V
Qrr
µC
Semiconductor Group
19
BSM 101 AR
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Power dissipation Ptot = f (TC)
parameter: Tj = 150 ˚C
Typ. output characteristics ID = f (VDS)
parameter: = 80 µs pulse test
Safe operating area ID = f (VDS)
parameter: single pulse, TC = 25 ˚C,
Tj ≤ 150 ˚C
Typ. transfer characteristic ID = f (VGS)
parameter: = 80 µs pulse test, VDS = 25 V
Semiconductor Group
20
BSM 101 AR
Continuous drain-source current
ID = f (TC)
Drain-source breakdown voltage
(BR)DSS = b × V(BR)DSS (25 ˚C)
V
parameter: VGS ≥ 10 V, T j = 150 ˚C
Drain source on-state resistance
Drain source on-state resistance
DS (on) = f (Tj)
parameter: ID = 200 A; VGS = 10 V
R
DS(on) = f (ID)
R
parameter: VGS
Semiconductor Group
21
BSM 101 AR
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = VGS, ID = 1 mA
(spread)
Semiconductor Group
22
BSM 101 AR
Transient thermal impedance ZthJC = f (tp)
parameter: D = tp/T
Typ. gate charge VGS = f (QGate
parameter: IDpuls = 330 A
)
Semiconductor Group
23
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