BUP311D [INFINEON]

IGBT With Antiparallel Diode Preliminary data sheet; IGBT随着反并联二极管的初步数据表
BUP311D
型号: BUP311D
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

IGBT With Antiparallel Diode Preliminary data sheet
IGBT随着反并联二极管的初步数据表

晶体 二极管 晶体管 电动机控制 双极性晶体管 栅 局域网
文件: 总9页 (文件大小:73K)
下载:  下载PDF数据表文档文件

BUP313

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

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412 INFINEON

BUP313D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)

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125 INFINEON

BUP313DQ67040-A4228-A2

TRANSISTOR DUOPACK IGBT

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30 INFINEON

BUP314

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

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421 INFINEON

BUP314D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

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316 INFINEON

BUP314S

IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)

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61 INFINEON

BUP32

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 30A I(C) | SOT-93

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23 ETC

BUP323

BUP323 - Tranzystor du縠j mocy wysokonapi阠iowy

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20 ETC

BUP33

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30A I(C) | SOT-93

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18 ETC

BUP34

TRANSISTOR | BJT | NPN | 900V V(BR)CEO | 1A I(C) | TO-220AB

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12 ETC

BUP35

TRANSISTOR HOCHSPANNUNG BIPOLAR

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29 ETC

BUP35

SILICON LPN EPITAXIAL PLANAR

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35 SEME-LAB

BUP36

TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 15A I(C) | SOT-93

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27 ETC

BUP37

TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 20A I(C) | SOT-93

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16 ETC

BUP38

TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 25A I(C) | SOT-93

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23 ETC