BTT6200-4ESA_技术文档

™

PROFET + 24V

BTT6200-4ESA

Feature list

•

Quad channel device

Very low stand-by current

3.3 V and 5 V compatible logic inputs

Electrostatic discharge protection (ESD)

Optimized electromagnetic compatibility

Logic ground independent from load ground

Very low power DMOS leakage current in OFF state

Green product (RoHS compliant)

Potential applications

•

Suitable for resistive, inductive and capacitive loads

Replaces electromechanical relays, fuses and discrete circuits

Most suitable for loads with high inrush current, such as lamps

Suitable for 12 V and 24 V trucks and transportation systems

V^BAT

Voltage Regulator

OUT

VS

GND

T¹

Z

C^VDD

C^VS

V^DD

VS

R^DEN

I/O

DEN

OUT0

OUT1

C^OUT

Relay

I/O

R^DSEL

DSEL0

DSEL1

86

85

30

87

R^DSEL

C^OUT

R^IN

I/O

IN0

IN1

IN2

IN3

Micro

controller

+

-

OUT2

OUT3

C^OUT

E.C.U.

OUT3

OUT4

C^OUT

R^SENSE

IS

A/D

GND

LED

R5W

GND

C^SENSE

D

Page-1

Figure 1

Application Diagram with BTT6200-4ESA

Product Type

Package

Marking

BTT62004ESA

BTT6200-4ESA

PG-TSDSO-24

Datasheet

Please read the Important Notice and Warnings at the end of this document

Rev. 1.00

www.infineon.com

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Product summary

The BTT6200-4ESA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-TSDSO-24

package, providing protective functions and diagnosis.

The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is

integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well

as LEDs in the harsh automotive environment.

Table 1

Product summary

Parameter

Symbol

V_S(OP)

Value

5 V to 36 V

65 V

Operating voltage range

Maximum supply voltage

V_S(LD)

Maximum ON state resistance at T_J= 150°C per channel

Nominal load current (one channel active)

Nominal load current (all channels active)

Typical current sense ratio

R_DS(ON)

I_L(NOM)1

I_L(NOM)2

k_ILIS

400 mΩ

1.5 A

1 A

300

Minimum current limitation

I_L5(SC)

9 A

Maximum standby current with load at T_J= 25°C

I_S(OFF)

500 nA

Diagnostic functions

•

Proportional load current sense multiplexed for the 4 channels

Open load detection in ON and OFF

Short circuit to battery and ground indication

Overtemperature switch oﬀ detection

Stable diagnostic signal during short circuit

Enhanced k_ILISdependency with temperature and load current

Protection functions

•

Stable behavior during undervoltage

Reverse polarity protection with external components

Secure load turn-oﬀ during logic ground disconnection with external components

Overtemperature protection with latch

Overvoltage protection with external components

Enhanced short circuit operation

Product validation

Qualified for Automotive Applications.

Product validation according to AEC-Q100/101.

Datasheet

2

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Table of contents

Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Block diagram reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1

2

3

Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Voltage and current definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.1

3.2

3.3

4

4.1

4.2

4.3

4.3.1

4.3.2

Electrical characteristics and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PCB set-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

5

Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Output ON-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Turn ON/OFF characteristics with resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Inductive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Output clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Maximum load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Inverse current capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Electrical characteristics - power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

5.1

5.2

5.3

5.3.1

5.3.2

5.4

5.5

6

Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Undervoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Overload protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

Temperature limitation in the power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Electrical characteristics for the protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

6.1

6.2

6.3

6.4

6.5

6.5.1

6.5.2

6.6

7

Diagnostic functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

7.1

IS pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

Datasheet

3

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Table of contents

7.2

SENSE signal in diﬀerent operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

7.3

SENSE signal in nominal current range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

SENSE signal variation as a function of temperature and load current . . . . . . . . . . . . . . . . . . . . . .28

SENSE signal timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

SENSE signal in open load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Open load in ON diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30

Open load in OFF diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Open load diagnostic timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

SENSE signal in short circuit to V_S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

SENSE signal in case of overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

SENSE signal in case of inverse current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Electrical characteristics diagnostic function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

7.3.1

7.3.2

7.3.3

7.3.3.1

7.3.3.2

7.3.3.3

7.3.4

7.3.5

7.3.6

7.4

8

Input pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Input circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39

DEN / DSEL0, 1 pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39

Input pin voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

8.1

8.2

8.3

8.4

9

Characterization results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42

Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Diagnostic mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45

Input pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

9.1

9.2

9.3

9.4

9.5

10

Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

10.1

Further application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

11

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

Datasheet

4

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Description

1

Description

The BTT6200-4ESA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-TSDSO-24

package, providing protective functions and diagnosis.

The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is

integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well

as LEDs in the harsh automotive environment.

Datasheet

5

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Block diagram reference

2

Block diagram reference

Channel 0

V_S

voltage sensor

internal

power

supply

over

temperature

T

clamp for

inductive load

gate control

&

charge pump

IN0

driver

logic

over current

switch limit

DEN

ESD

protection

load current sense and

OUT 0

open load detection

IS

forward voltage drop detection

V_S

Channel 1

T

IN1

Control and protection circuit equivalent to channel 0

DSEL0

DSEL1

OUT 1

Channel 2

T

Control and protection circuit equivalent to channel 0

IN2

OUT 2

Channel 3

T

Control and protection circuit equivalent to channel 0

IN3

OUT 3

GND

Block diagram DxS.vsd

Figure 2

Block diagram for BTT6200-4ESA

Datasheet

6

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Pin configuration

3

Pin configuration

3.1

Pin assignment

NC

IN0

NC

GND

IN1

DEN

IS

DSEL0

IN2

IN3

DSEL1

NC

1

2

3

4

5

6

7

8

24

23

22

21

20

19

18

17

16

15

14

13

OUT0

NC

OUT1

NC

OUT2

NC

OUT3

9

10

11

12

PG-TSDSO-24-21_Pinout.vsd

Figure 3

Pin configuration

3.2

Pin definitions and functions

Table 2

Pin definitions and functions

Symbol

Function

1, 3, 12, 14, 15, 16,

18, 19 , 21, 22, 23

NC

Not Connected; No internal connection to the chip

2

4

5

6

IN0

INput channel 0; Input signal for channel 0 activation

GrouND; Ground connection

GND

IN1

INput channel 1; Input signal for channel 1 activation

DEN

Diagnostic ENable; Digital signal to enable/disable the diagnosis of

the device

7

8

IS

Sense; Sense current of the selected channel

DSEL0

Diagnostic SELection; Digital signal to select the channel to be

diagnosed

9

IN2

INput channel 2; Input signal for channel 2 activation

INput channel 3; Input signal for channel 3 activation

10

11

IN3

DSEL1

Diagnostic SELection; Digital signal to select the channel to be

diagnosed

13

17

20

OUT3

OUT2

OUT1

OUTput 3; Protected high side power output channel 3

OUTput 2; Protected high side power output channel 2

OUTput 1; Protected high side power output channel 1

Datasheet

7

Rev. 1.00

2019-03-09

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PROFET + 24V

BTT6200-4ESA

Pin configuration

Table 2

Pin definitions and functions (continued)

Symbol

OUT0

VS

Function

24

OUTput 0; Protected high side power output channel 0

Voltage Supply; Battery voltage

Cooling tab

3.3

Voltage and current definition

Figure 4 shows all terms used in this data sheet, with associated convention for positive values.

V_DS3

V_DS1

V_DS2

V_DS0

I _S

V_S

VS

I_IN0

IN0

IN1

I_OUT0

V_IN0

OUT0

OUT1

OUT2

OUT3

I_IN1

V_IN1

I_IN2

I_OUT1

IN2

IN3

DEN

V_IN2

I_IN3

I_DEN

V_IN3

I_OUT2

V_DEN

I_DSEL0

DSEL0

DSEL1

I_DSEL1

I_IS

V_DSEL0

I_OUT3

V_DSEL1

IS

V_IS

GND

V_OUT0

V_OUT2

V_OUT1

V_OUT3

I_GND

voltage and current convention.vsd

Figure 4

Voltage and current definition

Datasheet

8

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Electrical characteristics and parameters

4

Electrical characteristics and parameters

4.1

Absolute maximum ratings

Table 3

Absolute maximum ratings¹⁾

T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit

Note or Test

Condition

Number

Min.

Max.

Supply voltages

Supply voltage

V_S

-0.3

–

48

V

–

P_4.1.1

P_4.1.2

Reverse polarity voltage

-V_S(REV)

0

–

28

t < 2 min

T_A= 25°C

R_L≥ 47 Ω

Z_GND= Diode

+27 Ω

Supply voltage for short

circuit protection

V_BAT(SC)

0

–

36

V

R_Supply= 10 mΩ

L_Supply= 5 µH

R_ECU= 20 mΩ

R_Cable= 16 mΩ/m

L_Cable= 1 µH/m,

l = 0 or 5 m

P_4.1.3

See Chapter 6 and

Figure 29

Supply voltage for Load dump V_S(LD)

protection

–

65

V

²⁾R_I= 2 Ω

R_L= 47 Ω

P_4.1.12

P_4.1.4

Short circuit capability

3)

Permanent short circuit

IN pin toggles

n_RSC1

100

k cycles

V

_

Input pins

Voltage at INPUT pins

V_IN

-0.3

–

6

7

–

P_4.1.13

t < 2 min

Current through INPUT pins

Voltage at DEN pin

I_IN

-2

–

2

mA

V

–

P_4.1.14

P_4.1.15

V_DEN

-0.3

–

6

7

–

t < 2 min

Current through DEN pin

I_DEN

-2

–

2

mA

–

P_4.1.16

1

Not subject to production test. Specified by design.

V_S(LD)is setup without the DUT connected to the generator per ISO 7637-1.

Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit

capability at the end of this document.

2

3

Datasheet

9

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Electrical characteristics and parameters

Table 3

Absolute maximum ratings¹⁾(continued)

T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit

Note or Test

Condition

Number

Min.

-0.3

–

Max.

Voltage at DSEL pin

V_DSEL

I_DSEL

–

6

7

V

–

P_4.1.17

P_4.1.18

t < 2 min

Current through DSEL pin

Sense pin

-2

–

2

mA

–

Voltage at IS pin

V_IS

I_IS

-0.3

-25

–

V_S

V

–

P_4.1.19

P_4.1.20

Current through IS pin

50

mA

Power stage

Load current

| I_L|

–

I_L(LIM)

A

–

P_4.1.21

P_4.1.22

Power dissipation (DC)

P_TOT

1.8

W

T_A= 85°C

T_J< 150°C

Maximum energy dissipation E_AS

Single pulse (one channel)

–

20

65

mJ

I_L(0)= 1 A

T_J(0)= 150°C

V_S= 28 V

P_4.1.23

Voltage at power transistor

Currents

V_DS

–

V

–

P_4.1.26

P_4.1.27

Current through ground pin

I _GND

-20

-150

20

mA

–

t < 2 min

Temperatures

Junction temperature

Storage temperature

ESD susceptibility

ESD susceptibility (all pins)

T_J

-40

-55

–

150

°C

–

P_4.1.28

P_4.1.30

T_STG

V_ESD

-2

-4

–

2

4

kV

⁴⁾HBM

P_4.1.31

P_4.1.32

ESD susceptibility OUT pin vs. V_ESD

GND and V_Sconnected

ESD susceptibility

V_ESD

-500

-750

–

500

750

V

⁵⁾CDM

P_4.1.33

P_4.1.34

ESD susceptibility pin

(corner pins)

Notes:

1.

Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may aﬀect device reliability.

1

4

5

Not subject to production test. Specified by design.

ESD susceptibility Human Body Model "HBM" according to AEC Q100-002

ESD susceptibility Charged Device Model "CDM" according to AEC Q100-011

Datasheet

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BTT6200-4ESA

Electrical characteristics and parameters

2.

Integrated protection functions are designed to prevent IC destruction under fault conditions described in

the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions

are not designed for continuous repetitive operation.

4.2

Functional range

Table 4

Functional range

T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

28

Unit Note or Test

Condition

Number

Min.

Max.

36

Nominal operating voltage

Extended operating voltage

V_NOM

8

5

V

–

7)

P_4.2.1

P_4.2.2

V_S(OP)

–

48

V = 4.5 V

IN

R_L= 47 Ω

V_DS< 0.5 V

6)

Minimum functional supply

voltage

V_{S(OP)_MIN}

3.8

4.3

3.5

5

V

= 4.5 V

P_4.2.3

IN

R_L= 47 Ω

From I_OUT= 0 A

to

V_DS< 0.5 V; see

Figure 16

6)

Undervoltage shutdown

V_S(UV)

3

4.1

V = 4.5 V

IN

P_4.2.4

V_DEN= 0 V

R_L= 47 Ω

From V_DS< 1 V;

to I_OUT= 0 A

See Chapter 9.1

and Figure 16

7)

Undervoltage shutdown

hysteresis

V_{S(UV)_HYS}

I_{GND_1}

–

850

2

–

4

mV

mA

–

P_4.2.13

P_4.2.5

Operating current

One channel active

V_IN= 5.5 V

V_DEN= 5.5 V

Device in R_DS(ON)

V_S= 36 V

See Chapter 9.1

7

Not subject to production test. Specified by design.

Test at T_J= -40°C only.

6

Datasheet

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Electrical characteristics and parameters

Table 4

Functional range (continued)

T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

Operating current

All channels active

I_{GND_4}

–

6

9

mA

V_IN= 5.5 V

P_4.2.6

V_DEN= 5.5 V

Device in R_DS(ON)

V_S= 36 V

See Chapter 9.1

⁶⁾V_S= 36 V

V_OUT= 0 V

V_INfloating

V_DENfloating

T_J≤ 85 °C

Standby current for whole

device with load (ambient)

I_S(OFF)

0.1

0.5

20

–

µA

P_4.2.7

P_4.2.10

P_4.2.8

Maximum standby current for

whole device with load

I_{S(OFF)_150}

–

µA

V_S= 36 V

V_OUT= 0 V

V_INfloating

V_DENfloating

T_J= 150 °C

⁷⁾V_S= 36 V

V_OUT= 0 V

Standby current for whole

device with load, diagnostic

active

I_{S(OFF_DEN)}

0.6

mA

V_INfloating

V_DEN= 5.5 V

Note:

Within the functional range the IC operates as described in the circuit description. The electrical

characteristics are specified within the conditions given in the related electrical characteristics table.

4.3

Thermal resistance

Table 5

Thermal resistance

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

8)

Junction to case

R_thJC

R_thJA

–

3

–

K/W

P_4.3.1

P_4.3.2

8)9)

Junction to ambient

All channels active

28

K/W

6

Test at T_J= -40°C only.

Not subject to production test. Specified by design.

7

8

Datasheet

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Electrical characteristics and parameters

4.3.1

PCB set-up

70µm

35µm

1.5mm

0.3mm

PCB 2s2p.vsd

Figure 5

2s2p PCB cross section

Figure 6

PC board top and bottom view for thermal simulation with 600 mm²cooling area

9

Specified R_thjavalue is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board with 1

W power dissipation equally dissipated for all channel at T_A= 105°C ; The product (chip + package) was

simulated on a 76.4 mm x 114.3 mm x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm

Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper layer.

Please refer to Figure 5 .

Datasheet

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Electrical characteristics and parameters

4.3.2

Thermal impedance

BTT6200-4ESA

100

10

1

2s2p

1s0p - 600 mm²

1s0p - 300 mm²

1s0p - footprint

0,1

0,0001

0,001

0,01

0,1

1

10

100

1000

Time (s)

Figure 7

Typical thermal impedance. 2s2p PCB set-up according to Figure 5

BTT6200-4ESA

120

1s0p - Tambient = 105°C

110

100

90

80

70

60

50

40

30

0

100

200

300

400

500

600

Cooling area (mm²)

Figure 8

Typical thermal resistance. PCB set-up 1s0p

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Power stage

5

Power stage

The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.

5.1

Output ON-state resistance

The ON-state resistance R_DS(ON)depends on the supply voltage as well as the junction temperature T_J. Figure 9

shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The

behavior in reverse polarity is described in Chapter 6.4.

Figure 9

Typical ON-state resistance

A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope,

which is optimized in terms of EMC emission.

5.2

Turn ON/OFF characteristics with resistive load

Figure 10 shows the typical timing when switching a resistive load.

IN

V_{IN_H}

V_{IN_L}

t

V_OUT

dV/dt _ON

dV/dt _OFF

t_ON

90% V_S

t_{OFF_delay}

70% V_S

30% V_S

t_{ON_delay}

t_OFF

10% V_S

t

Switching times.vsd

Figure 10

Switching a resistive load timing

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Power stage

5.3

Inductive load

5.3.1

Output clamping

When switching OFF inductive loads with high side switches, the voltage V_OUTdrops below ground potential,

because the inductance intends to continue driving the current. To prevent the destruction of the device by

avalanche due to high voltages, there is a voltage clamp mechanism Z_DS(AZ)implemented that limits negative

output voltage to a certain level (V_S- V_DS(AZ)). Please refer to Figure 11 and Figure 12 for details. Nevertheless,

the maximum allowed load inductance is limited.

VS

Z_DS(AZ)

V_DS

INx

LOGIC

I_L

V_BAT

GND

Z_GND

OUTx

V_OUT

V_IN

L, R_L

Output_clamp.vsd

Figure 11

Output clamp

IN

t

V_OUT

V_S

t

V_S-V_DS(AZ)

I_L

t

Switching an inductance.vsd

Figure 12

Switching an inductive load timing

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Power stage

5.3.2

Maximum load inductance

During demagnetization of inductive loads, energy has to be dissipated in the BTT6200-4ESA. This energy can

be calculated with following equation:

V

− V

R

R ⋅ I

− V

L

R

L

S

DS AZ

L

E = V_{DS AZ}

⋅

⋅ ln 1 −

+ I_L

DS AZ

V

S

Equation 1

The following equation simplifies under the assumption of R_L= 0 Ω.

V_S

1

E = ⋅ L ⋅ I²⋅ 1 −

2

V_S− V_{DS AZ}

Equation 2

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 13 for

the maximum allowed energy dissipation as a function of the load current.

Figure 13

Maximum energy dissipation single pulse, T_{J_START}= 150°C; V_S= 28 V

5.4

Inverse current capability

In case of inverse current, meaning a voltage V_INVat the OUTput higher than the supply voltage V_S, a current I_INV

will flow from output to V_Spin via the body diode of the power transistor (please refer to Figure 14). The output

stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular

case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current I_INVshould not

be higher than I_L(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the aﬀected channel

is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of

V_INV, a parasitic diagnostic can be observed. Aꢀer, the diagnosis is valid and reflects the output state. At V_INV

vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions

are available.

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Power stage

V_BAT

VS

Gate

driver

Device

logic

V_INV

INV

Comp.

I_L(INV)

OUT

GND

Z_GND

inverse current.vsd

Figure 14

Inverse current circuitry

5.5

Electrical characteristics - power stage

Table 6

Electrical characteristics: Power stage

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

ON-state resistance per channel R_{DS(ON)_150}300

Max.

400

360

mΩ

I_L= I_L4= 1 A

V_IN= 4.5 V

P_5.5.1

T_J= 150°C

See Figure 9

ON-state resistance per channel R_{DS(ON)_25}

–

200

1.5

–

mΩ

A

¹⁰⁾T_J= 25 °C

¹⁰⁾T_A= 85°C

T_J< 150°C

P_5.5.21

P_5.5.2

Nominal load current One

channel active

I_L(NOM)1

Nominal load current All

channels active

I_L(NOM)2

–

1

–

A

P_5.5.3

P_5.5.4

Output voltage drop limitation at V_DS(NL)

10

22

mV

I_L= I_L0= 25 mA

small load currents

See Chapter 9.3

Drain to source clamping voltage V_DS(AZ)

65

–

70

75

V

I_DS= 5 mA

See Figure 12

See Chapter 9.1

11)

P_5.5.5

P_5.5.6

V_DS(AZ)= [V_S- V_OUT

]

Output leakage current per

I_L(OFF)

0.1

0.5

µA

V floating

IN

channel T_J≤ 85 °C

V_OUT= 0 V

T_J≤ 85°C

10

Not subject to production test, specified by design.

Test at T_J= -40°C only

11

Datasheet

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Power stage

Table 6

Electrical characteristics: Power stage (continued)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

Output leakage current per

channel T_J= 150 °C

I_{L(OFF)_150}

–

1

5

–

µA

V_INfloating

V_OUT= 0 V

T_J= 150°C

P_5.5.8

Inverse current capability

I_L(INV)

1

A

¹⁰⁾V_S< V_OUTXSee P_5.5.9

Figure 14

Slew rate

30% to 70% V_S

dV/dt_ON

0.3

0.8

1.3

V/µs R_L= 47 Ω

V_S= 28 V

P_5.5.11

P_5.5.12

P_5.5.13

See Figure 10

Slew rate

70% to 30% V_S

-dV/dt_OFF

0.3

0.8

0

1.3

V/µs

See Chapter 9.1

Slew rate matching

ΔdV/dt

-0.15

0.15

V/µs

dV/dt_ON- dV/dt_OFF

Turn-ON time to VOUT = 90% V_St_ON

Turn-OFF time to VOUT = 10% V_St_OFF

20

70

0

150

50

µs

P_5.5.14

P_5.5.15

P_5.5.16

20

Turn-ON / OFF matching

Δt_SW

-50

t_OFF- t_ON

Turn-ON time to VOUT = 10% V_St_{ON_delay}

Turn-OFF time to VOUT = 90% V_St_{OFF_delay}

–

35

70

–

µs

µJ

P_5.5.17

P_5.5.18

P_5.5.19

35

Switch ON energy

E_ON

190

¹⁰⁾R_L= 47 Ω

V_OUT= 90% V_S

V_S= 36 V

See Chapter 9.1

Switch OFF energy

E_OFF

–

210

–

µJ

¹⁰⁾R_L= 47 Ω

V_OUT= 10% V_S

V_S= 36 V

P_5.5.20

See Chapter 9.1

10

Not subject to production test, specified by design.

Datasheet

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Protection functions

6

Protection functions

The device provides integrated protection functions. These functions are designed to prevent the destruction of

the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal

operating range. Protection functions are designed for neither continuous nor repetitive operation.

6.1

Loss of ground protection

In case of loss of the module ground and the load remains connected to ground, the device protects itself by

automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN

pins.

In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the

BTT6200-4ESA to ensure switching OFF of channels.

In case of loss of module or device ground, a current (I_OUT(GND)) can flow out of the DMOS. Figure 15 sketches

the situation.

Z_GNDis recommended to be a resistor in series to a diode .

Z_IS(AZ)

V_S

Z_D(AZ)

V_BAT

Z_DS(AZ)

IS

R_SENSE

DSEL0

DSEL1

DEN

R_DSEL

R_DEN

LOGIC

INx

R_IN

I_OUT(GND)

OUTx

ZD_ESD

GND

R_IS

IS

Z_GND

Loss of ground protection.vsd

Figure 15

Loss of ground protection with external components

6.2

Undervoltage protection

Between V_S(UV)and V_S(OP), the undervoltage mechanism is triggered. V_S(OP)represents the minimum voltage

where the switching ON and OFF can takes place. V_S(UV)represents the minimum voltage the switch can hold

ON. If the supply voltage is below the undervoltage mechanism V_S(UV), the device is OFF (turns OFF). As soon as

the supply voltage is above the undervoltage mechanism V_S(OP), then the device can be switched ON. When the

switch is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until V_Sis in

the V_NOMrange. Figure 16 illustrates the undervoltage mechanism.

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Protection functions

V_OUT

undervoltage behavior.vsd

V_S

V_S(UV)

V_S(OP)

Figure 16

Undervoltage behavior

6.3

Overvoltage protection

There is an integrated clamp mechanism for overvoltage protection (Z_D(AZ)). To guarantee this mechanism

operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.

Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than

V_S(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a

result, the internal ground potential rises to V_S- V_S(AZ). Due to the ESD Zener diodes, the potential at pin INx,

DSELx, and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the

case the device was ON, prior to overvoltage, the BTT6200-4ESA remains ON. In the case the BTT6200-4ESA was

OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above

V_BAT(SC)and below V_DS(AZ), the output transistor is still operational and follows the input. If at least one channel

is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply

voltage range. This especially impacts the short circuit robustness, as well as the maximum energy E_AS

capability. Z_GNDis recommended to be a resistor in series to a diode.

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Protection functions

I_SOV

Z_IS(AZ)

V_S

Z_D(AZ)

V_BAT

Z_DS(AZ)

IS

R_SENSE

DSEL0

DSEL1

DEN

R_DSEL

R_DEN

LOGIC

INx

R_IN

OUTx

ZD_ESD

GND

R_IS

Z_GND

Overvoltage protection.vsd

Figure 17

Overvoltage protection with external components

6.4

Reverse polarity protection

In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current

in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the

logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure

18 shows a typical application. R_GNDresistor is used to limit the current in the Zener protection of the device.

Resistors R_DSEL, R_DEN, and R_INare used to limit the current in the logic of the device and in the ESD protection

stage. R_SENSEis used to limit the current in the sense transistor which behaves as a diode. The recommended

value for R_DEN= R_DSEL= R_IN= R_SENSE= 10 kΩ. It is recommended to use a resistor in series to a diode in the

ground path.

During reverse polarity, no protection functions are available.

Datasheet

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Protection functions

Microcontroller

protection diodes

Z_IS(AZ)

V_S

Z_D(AZ)

Z_DS(AZ)

IS

R_SENSE

V_DS(REV)

DSEL0

DSEL1

R_DSEL0

R_DSEL1

R_DEN

R_IN

DEN

INx

LOGIC

-V_S(REV)

I N 0

OUTx

ZD_ESD

GND

IS

R_GND

L,R_L

R_IS

D

Reverse Polarity.vsd

Figure 18

Reverse polarity protection with external components

6.5

Overload protection

In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6200-4ESA

oﬀers several protection mechanisms.

6.5.1

Current limitation

At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the

maximum current allowed in the switch I_L(SC). During this time, the DMOS temperature increases, which aﬀects

the current flowing in the DMOS.

6.5.2

Temperature limitation in the power DMOS

Each channel incorporates both an absolute (T_J(SC)) and a dynamic (T_J(SW)) temperature sensor. Activation of

either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF

latches the output until the temperature has reached an acceptable value which is depicted in Figure 19.

No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is

switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).

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Protection functions

IN

t

I_L

LOAD CURRENT BELOW

LIMITATION PHASE

LOAD CURRENT LIMITATION PHASE

I_L(x)SC

I_L(NOM)

t

T_DMOS

T_J(SC)

Temperature

protection phase

T_J(SW)

T_A

t_sIS(FAULT)

t

t_{sIS(OC_blank)}

I_IS

I_IS(FAULT)

I_L(NOM)/ k_ILIS

0A

V_DEN

t_sIS(OFF)

0V

t

Hard start.vsd

Figure 19

Overload protection

Note:

For better understanding, the time scale is not linear. The real timing of this drawing is application

dependant and cannot be described.

Datasheet

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Protection functions

6.6

Electrical characteristics for the protection functions

Table 7

Electrical Characteristics: Protection

V_S= 8 V to 36 V, T_J= -40°C to 150°C, (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or Test

Condition

Number

Min.

Typ. Max.

Loss of ground

Output leakage current while

GND disconnected

I_OUT(GND)

V_DS(REV)

V_S(AZ)

–

0.1

650

70

–

mA

mV

V

¹²⁾¹³⁾V_S= 28 V

See Figure 15

P_6.6.1

P_6.6.2

P_6.6.3

Reverse polarity

Drain source diode voltage

during reverse polarity

200

65

700

75

¹⁴⁾I_L= - 1 A

See Figure 18

Overvoltage

Overvoltage protection

I_SOV= 5 mA

See Figure 17

Overload condition

15)

Load current limitation

I_L5(SC)

9

–

11

80

14

–

A

K

V

= 5 V See

P_6.6.4

P_6.6.8

DS

Figure 19 and

Chapter 9.3

¹⁶⁾See Figure 19

Dynamic temperature increase ΔT_J(SW)

while switching

Thermal shutdown temperature T_J(SC)

150

–

170

30

200

–

°C

K

¹⁴⁾See Figure 19

13)

P_6.6.10

P_6.6.11

Thermal shutdown hysteresis

ΔT_J(SC)

12

All pins are disconnected except V_Sand OUT.

Not Subject to production test, specified by design.

Test at T_J= +150°C only.

Test at T_J= -40°C only.

Functional test only

13

14

15

16

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Diagnostic functions

7

Diagnostic functions

For diagnosis purposes, the BTT6200-4ESA provides a combination of digital and analog signals at pin IS. These

signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case

DEN is activated, the sense current of the channel X is enabled/disabled via associated pins DSEL0 and DSEL1.

Table 8 gives the truth table.

Table 8

Diagnostic truth table

DEN

DSEL1

DSEL0

IS

Z

0

1

don't care

Z

0

1

0

1

0

1

I_IS(0)

0

I_IS(1)

0

I_IS(2)

0

I_IS(3)

7.1

IS pin

The BTT6200-4ESA provides a sense signal called I_ISat pin IS. As long as no “hard” failure mode occurs (short

circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at

OFF) a proportional signal to the load current (ratio k_ILIS= I_L/ I_IS) is provided. The complete IS pin and diagnostic

mechanism is described in Figure 20. The accuracy of the sense current depends on temperature and load

current. The sense pin multiplexes the currents I_IS(0), I_IS(1), I_IS(2)and I_IS(3)via the pins DSEL0 and DSEL1. Thanks to

this multiplexing, the matching between k_ILISCHANNEL0, k_ILISCHANNEL1, k_ILISCHANNEL2and k_ILISCHANNEL3is optimized.

Due to the ESD protection, in connection to V_S, it is not recommended to share the IS pin with other devices if

these devices are using another battery feed. The consequence is that the unsupplied device would be fed via

the IS pin of the supplied device.

V_S

I_IS3

I_L3/ k_ILIS

=

I_IS1

I_L1/ k_ILIS

=

I_IS0

I_L0/ k_ILIS

=

I_IS2

I_L2/ k_ILIS

=

I_IS(FAULT)

Z_IS(AZ)

0

1

0

1

FAULT

1

0

IS

DEN

0

1

FAULT

DSEL1

Sense schematic.vsd

DSEL0

Figure 20

Diagnostic block diagram

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Diagnostic functions

7.2

SENSE signal in diﬀerent operating modes

Table 9 gives a quick reference for the state of the IS pin during device operation.

Table 9

Sense signal, function of operation mode

Operation mode Input level

channel x

DEN¹⁷⁾

Output level

Diagnostic

output

Normal operation OFF

H

Z

Short circuit to

GND

~GND

Overtemperature

Short circuit to V_S

Open load

Z

V_S

I_IS(FAULT)

Z

18)

< V_OL(OFF)

18)

> V_OL(OFF)

I_IS(FAULT)

I_IS= I_L/ k_ILIS

I_IS(FAULT)

Inverse current

~V_INV

~V_S

Normal operation ON

Current limitation

<V_S

Short circuit to

GND

~GND

Overtemperature

Z

I_IS(FAULT)

T_J(SW)event

Short circuit to VS

Open load

V_S

I_IS< I_L/ k_ILIS

I_IS< I_IS(OL)

19)

~V_S

20)

Inverse current

Underload

~V_INV

I_IS< I_IS(OL)

21)

~V_S

I_IS(OL)< I_IS< I_L/

k_ILIS

Don't care

L

Don't care

Z

17

The table doesn’t indicate but it is assumed that the appropriate channel is selected via the DSEL pins.

Stable with additional pull-up resistor.

18

19

20

21

The output current has to be smaller than I_L(OL)

Aꢀer maximum t_INV

The output current has to be higher than I_L(OL)

.

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Diagnostic functions

7.3

SENSE signal in nominal current range

Figure 21 shows the current sense as a function of the load current in the power DMOS. Usually, a pull-down

resistor R_ISis connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit the power

losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense current,

assuming an ideal k_ILISfactor value. The red curves shows the accuracy the device provides across full

temperature range at a defined current.

Figure 21

Current sense for nominal load

7.3.1

SENSE signal variation as a function of temperature and load

current

In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement, a

calibration on the application is possible. To avoid multiple calibration points at diﬀerent load and temperature

conditions, the BTT6200-4ESA allows limited derating of the k_ILISvalue, at a given point (I_L3; T_J= +25°C). This

derating is described by the parameter Δk_ILIS. Figure 22 shows the behavior of the sense current, assuming one

calibration point at nominal load at +25°C.

The blue line indicates the ideal k_ILISratio.

The green lines indicate the derating on the parameter across temperature and voltage, assuming one

calibration point at nominal temperature and nominal battery voltage.

The red lines indicate the k_ILISaccuracy without calibration.

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Figure 22

Improved current sense accuracy with one calibration point at 0.2 A

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Diagnostic functions

7.3.2

SENSE signal timing

Figure 23 shows the timing during settling and disabling of the SENSE.

V_INx

t

I_Lx

t_ONx

t_OFFx

t_ONx

90% of

I_Lstatic

t

V_DEN

t

I_IS

t_sIS(LC)

t_sIS(chC)

t_sIS(OFF)

t_sIS(ON)

t_{sIS(ON_DEN)}

90% of

I_ISstatic

t

V_DSEL

V_INy

t

I_Ly

t_ONy

t

current sense settling disabling time.vsd

Figure 23

Current sense settling / disabling timing

7.3.3

SENSE signal in open load

7.3.3.1

Open load in ON diagnostic

If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The

parameter I_L(OL)gives the threshold of recognition for this leakage current. If the current I_Lflowing out the

power DMOS is below this value, the device recognizes a failure, if the DEN (and DSEL) is selected. In that case,

the SENSE current is below I_IS(OL). Otherwise, the minimum SENSE current is given above parameter I_IS(OL)

.

Figure 24 shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue

curve shows the ideal current sense.

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Diagnostic functions

I_IS

I_IS(OL)

I_L

I_L(OL)

Sense for OL.vsd

Figure 24

Current sense ratio for low currents

7.3.3.2

Open load in OFF diagnostic

For open load diagnosis in OFF-state, an external output pull-up resistor (R_OL) is recommended. For the

calculation of pull-up resistor value, the leakage currents and the open load threshold voltage V_OL(OFF)have to

be taken into account. Figure 25 gives a sketch of the situation. I_leakagedefines the leakage current in the

complete system, including I_L(OFF)(see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc...

in the application.

To reduce the stand-by current of the system, an open load resistor switch S_OLis recommended. If the channel x

is OFF, the output is no longer pulled down by the load and V_OUTvoltage rises to nearly V_S. This is recognized by

the device as an open load. The voltage threshold is given by V_OL(OFF). In that case, the SENSE signal is switched

to the I_IS(FAULT)

.

An additional RPD resistor can be used to pull V_OUTto 0 V. Otherwise, the OUT pin is floating. This resistor can be

used as well for short circuit to battery detection, see Chapter 7.3.4

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Diagnostic functions

V_bat

S_OL

V_S

I_IS(FAULT)

OL

comp.

OUT

IS

I_LOFF

I_leakage

GND

Z_GND

V_OL(OFF)

Open Load in OFF.vsd

Figure 25

Open load detection in OFF electrical equivalent circuit

7.3.3.3

Open load diagnostic timing

Figure 26 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please

note that a delay t_{sIS(FAULT_OL_OFF)}has to be respected aꢀer the falling edge of the input, when applying an open

load in OFF diagnosis request, otherwise the diagnosis can be wrong.

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Diagnostic functions

Load is present

Open load

V_IN

V_OUT

t

V_S-V_OL(OFF)

shutdown with load

R_DS(ON)x I_L

t

I_OUT

t_{sIS(FAULT_OL_ON_OFF)}

I_IS

t_sIS(LC)

t

Error Settling Disabling Time.vsd

Figure 26

Sense signal in open load timing

7.3.4

SENSE signal in short circuit to V_S

In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit

impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the

normal operation will flow through the DMOS of the BTT6200-4ESA, which can be recognized at the current

sense signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In

that case, an external resistor to ground R_{SC_VS}is required. Figure 27 gives a sketch of the situation.

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Diagnostic functions

V_bat

VS

I_IS(FAULT)

V_BAT

OL

comp.

IS

OUT

GND

Z_GND

V_OL(OFF)

R_{SC_VS}

R_IS

Short circuit to Vs.vsd

Figure 27

Short circuit to battery detection in OFF electrical equivalent circuit

7.3.5

SENSE signal in case of overload

An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or

the absolute dynamic temperature swing T_J(SW)is reached, and / or the junction temperature reaches the

thermal shutdown temperature T_J(SC). Please refer to Chapter 6.5 for details.

In that case, the SENSE signal given is by I_IS(FAULT)when the diagnostic is selected.

The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic

temperature condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If

the DEN pin is activated, and DSEL pin is selected to the correct channel, the SENSE follows the output stage. If

no reset of the latch occurs, the device remains in the latching phase and I_IS(FAULT)at the IS pin, even though the

DMOS is OFF.

7.3.6

SENSE signal in case of inverse current

In the case of inverse current, the sense signal of the aﬀected channel will indicate open load in OFF state and

indicate open load in ON state. The unaﬀected channels indicate normal behavior as long as the I_INVcurrent

does not exceed the maximum value specified in Chapter 5.4.

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Diagnostic functions

7.4

Electrical characteristics diagnostic function

Table 10

Electrical characteristics: Diagnostics

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

Load condition threshold for diagnostic

22)

Open load detection threshold in V_S- V_OL(OFF)

OFF state

4

5

–

6

V

= 0 V

P_7.5.1

P_7.5.2

IN

V_DEN= 4.5 V

See Figure 26

Open load detection threshold in I_L(OL)

ON state

15

mA V_IN= V_DEN= 4.5 V

I_IS(OL)= 33 μA

See Figure 24

See Chapter 9.4

Sense pin

22)

IS pin leakage current when

sense is disabled

I_{IS_(DIS)}

–

1

0.02

–

1

µA

V

= 4.5 V

P_7.5.4

P_7.5.6

IN

V_DEN= 0 V

I_L= I_L4= A

Sense signal saturation voltage

V_S- V_IS

3.5

V_IN= 0 V

(RANGE)

V_OUT= V_S> 10 V

V_DEN= 4.5 V

I_IS= 6 mA

See Chapter 9.4

Sense signal maximum current in I_IS(FAULT)

fault condition

6

15

70

35

75

mA V_IS= V_IN= V_DSEL= 0 V P_7.5.7

V_OUT= V_S> 10 V

V_DEN= 4.5 V

See Figure 20

See Chapter 9.4

Sense pin maximum voltage VS

to IS

V_IS(AZ)

65

V

I_IS= 5 mA

P_7.5.3

See Figure 20

Current sense ratio signal in the nominal area, stable load current condition

22

DSEL pin select channel 0 only.

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Table 10

Electrical characteristics: Diagnostics (continued)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

Current sense ratio

I_L0= 10 mA

k_ILIS0

k_ILIS1

k_ILIS2

k_ILIS3

k_ILIS4

Δk_ILIS

-50% 330

-40% 300

-15% 300

-11% 300

+50%

V_IN= 4.5 V

V_DEN= 4.5 V

See Figure 21

T_J= -40°C; 150°C

P_7.5.8

P_7.5.9

P_7.5.10

P_7.5.11

P_7.5.12

Current sense ratio

I_L1= 0.05 A

+40%

+15%

+11%

+9%

+8

Current sense ratio

I_L2= 0.2 A

Current sense ratio

I_L3= 0.5 A

Current sense ratio

I_L4= 1 A

-9%

-8

300

0

23)

k_ILISderating with current and

%

k

versus k_ILIS2P_7.5.17

ILIS3

temperature

See Figure 22

Diagnostic timing in normal condition

23)

Current sense settling time to

k_ILISfunction stable aꢀer positive

input slope on both INput and

DEN

t_sIS(ON)

–

150

µs

V

= V_IN= 0 to

P_7.5.18

DEN

4.5 V

V_S= 28 V

R_IS= 1.2 kΩ

C_SENSE< 100 pF

I_L= I_L3= 0.5 A

See Figure 23

22)

Current sense settling time with t_{sIS(ON_DEN)}

load current stable and transition

of the DEN

–

10

15

µs

V

= 0 to 4.5 V

P_7.5.19

P_7.5.20

DEN

R_IS= 1.2 kΩ

C_SENSE< 100 pF

I_L= I_L3= 0.5 A

See Figure 23

22)

Current sense settling time to I_ISt_sIS(LC)

stable aꢀer positive input slope

on current load

V

= 4.5 V

DEN

R_IS= 1.2 kΩ

C_SENSE< 100 pF

I_{L = IL2}= 0.2 A to

I_{L = L3}

I = 0.5 A

See Figure 23

Diagnostic timing in open load condition

23

Not subject to production test, specified by design. Current sense settling time to

DSEL pin select channel 0 only.

22

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Diagnostic functions

Table 10

Electrical characteristics: Diagnostics (continued)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

–

Unit Note or Test

Condition

Number

Min.

Max.

50

22)

Current sense settling time to I_ISt_{sIS(FAULT_OL}

stable for open load detection in

OFF state

–

µs

V

= 0 to 4.5 V

P_7.5.22

DEN

_OFF)

R_IS= 1.2 kΩ

C_SENSE< 100 pF

V_OUT= V_S= 28 V

23)

Current sense settling time to I_ISt_{sIS(FAULT_OL}

150

–

µs

V

= 4.5 to 0 V

P_7.5.23

IN

stable for open load detection in

ON-OFF transition

_ON_OFF)

V_DEN= 4.5 V

R_IS= 1.2 kΩ

C_SENSE< 100 pF

V_OUT= V_S= 28 V See

Figure 26

Diagnostic timing in overload condition

24)25)26)

Current sense settling time to I_ISt_sIS(FAULT)

–

150

µs

V = V_DEN= 0 P_7.5.24

IN

stable for overload detection

to 4.5 V

R_IS= 1.2 kΩ

C_SENSE< 100 pF

V_DS= 5 V

See Figure 19

Current sense over current

blanking time

t_{sIS(OC_blank}

)

–

350

–

µs

V_IN= V_DEN= 4.5 V

R_IS= 1.2 kΩ

C_SENSE< 100 pF

V_DS= 5 V to 0 V

See Figure 19

P_7.5.32

P_7.5.25

Diagnostic disable time

DEN transition to

I_IS< 50% I_L/k_ILIS

t_sIS(OFF)

–

20

V_IN= 4.5 V

V_DEN= 4.5 V to 0 V

R_IS= 1.2 kΩ

C_SENSE< 100 pF

I_L= I_L3= 0.5 A

See Figure 23

22

DSEL pin select channel 0 only.

Not subject to production test, specified by design. Current sense settling time to

DSEL pin select channel 0 only.

Test at T_J= -40°C only.

Functional Test only.

23

24

25

26

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Table 10

Electrical characteristics: Diagnostics (continued)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

–

Unit Note or Test

Condition

Number

Min.

Max.

20

Current sense settling time from t_sIS(ChC)

one channel to another

–

µs

V_IN0= V_IN1= 4.5 V

V_DEN= 4.5 V

P_7.5.26

V_DSEL= 0 to 4.5 V

R_IS= 1.2 kΩ

C_SENSE< 100 pF

I_L(OUT0)= I_L3= 0.5 A

I_{L(OUT1) = L2}

I = 0.2 A

See Figure 23

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Input pins

8

Input pins

8.1

Input circuitry

The input circuitry is compatible with 3.3 V and 5 V microcontrollers. The concept of the input pin is to react to

voltage thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin is

slowly increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The

input circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In

case the pin is not needed, it must be leꢀ opened, or must be connected to device ground (and not module

ground) via a 10 kΩ input resistor.

IN

GND

Input circuitry.vsd

Figure 28

Input pin circuitry

8.2

DEN / DSEL0, 1 pin

The DEN / DSEL0, 1 pins enable and disable the diagnostic functionality of the device. The pins have the same

structure as the INput pins, please refer to Figure 28.

8.3

Input pin voltage

The IN, DSEL and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region,

set by the thresholds V_IN(L)Max. and V_IN(H)Min. The exact value where the ON and OFF take place are unknown

and depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a

hysteresis is implemented. This ensures a certain immunity to noise.

8.4

Electrical characteristics

Table 11

Electrical characteristics: Input pins

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

INput pins characteristics

Low level input voltage range

V_IN(L)

-0.3

–

0.8

V

See Chapter 9.5 P_8.4.1

See Chapter 9.5 P_8.4.2

High level input voltage range V_IN(H)

2

–

6

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Input pins

Table 11

Electrical characteristics: Input pins (continued)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Number

Min.

Max.

Input voltage hysteresis

V_IN(HYS)

–

250

–

mV

²⁷⁾See Chapter

9.5

P_8.4.3

Low level input current

High level input current

I_IN(L)

I_IN(H)

1

2

10

25

µA

V_IN= 0.8 V

P_8.4.4

P_8.4.5

V_IN= 5.5 V

See Chapter 9.5

DEN Pin

Low level input voltage range

V_DEN(L)

-0.3

2

–

0.8

6

V

–

P_8.4.6

P_8.4.7

P_8.4.8

P_8.4.9

P_8.4.10

High level input voltage range V_DEN(H)

–

V

–

27)

Input voltage hysteresis

Low level input current

High level input current

DSEL Pins

V_DEN(HYS)

I_DEN(L)

–

250

10

–

mV

µA

1

25

V_DEN= 0.8 V

V_DEN= 5.5 V

I_DEN(H)

2

Low level input voltage range

V_DSEL(L)

-0.3

2

–

0.8

6

V

–

P_8.4.11

P_8.4.12

P_8.4.13

P_8.4.14

P_8.4.15

High level input voltage range V_DSEL(H)

–

V

–

27)

Input voltage hysteresis

Low level input current

High level input current

V_DSEL(HYS)

I_DSEL(L)

–

250

10

–

mV

µA

1

25

V_DSEL= 0.8 V

V_DSEL= 5.5 V

I_DSEL(H)

2

27

Not subject to production test, specified by design.

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Characterization results

9

Characterization results

The characterization has been performed on 3 lots, with 3 devices each. Characterization has been performed at

8 V, 28 V and 36 V overtemperature range.

9.1

General product characteristics

P_4.2.3

P_4.2.4

Minimum functional supply voltage V_{S(OP)_MIN}= f(T_J) Undervoltage threshold V_S(UV)= f(T_J)

5.000

4.900

4.800

4.700

4.600

4.500

4.000

3.900

3.800

3.700

3.600

3.500

[V]

3.400

3.300

3.200

3.100

3.000

4.400

4.300

4.200

4.100

4.000

8V

28V

36V

28V

36V

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

P_4.2.6

P_4.2.7, P_4.2.10

Current consumption for whole device with load -

all channels active I_{GND_2}= f(T_J; V_S)

Standby current for whole device with load I_S(OFF)

f(T_J; V_S)

=

7.000

6.000

5.000

4.000

3.500

3.000

2.500

2.000

[µA]

[mA]

3.000

1.500

2.000

1.000

8V

1.000

0.500

0.000

28V

36V

28V

36V

0.000

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

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Characterization results

9.2

Power stage

P_5.5.4

P_5.5.5

Output voltage drop limitation at low load current: Drain to source clamp voltage V_DS(AZ)= f(T_J)

V_DS(NL)= f(T_J) and V_DS(NL)= f(V_S)

12.000

11.500

11.000

10.500

10.000

9.500

75.000

74.000

73.000

72.000

71.000

70.000

[V]

[mV]

69.000

68.000

67.000

66.000

65.000

9.000

8.500

8.000

7.500

7.000

8V

28V

36V

28V

36V

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

P_5.5.11

P_5.5.12

Slew rate at turn ON dV / dt_ON= f(T_J; V_S) = R_L= 47 Ω

Slew rate at turn OFF-dV / dt_OFF= f(T_J; V_S) = R_L= 47 Ω

1.000

0.900

0.800

0.700

0.600

1.000

0.900

0.800

0.700

0.600

0.500

[V/µs]

0.500

[V/µs]

0.400

0.300

0.200

8V

28V

0.100

36V

0.000

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

Datasheet

42

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Characterization results

P_5.5.14

P_5.5.15

Turn ONt_ON= f(T_J; V_S) = R_L= 47 Ω

Turn OFF t_OFF= f(T_J; V_S) = R_L= 47 Ω

80.000

90.000

80.000

70.000

60.000

50.000

70.000

60.000

50.000

40.000

[µs]

40.000

[ms]

30.000

20.000

10.000

0.000

30.000

20.000

10.000

0.000

8V

28V

36V

28V

36V

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

P_5.5.19

P_5.5.20

Switch ON energy E_ON= f(T_J; V_S) = R_L= 47 Ω

Switch OFF energy E_OFF= f(T_J; V_S) = R_L= 47 Ω

2.50E-04

3.00E-04

2.50E-04

2.00E-04

1.50E-04

[µJ]

1.00E-04

5.00E-05

0.00E+00

8V

28V

36V

28V

36V

0.00E+00

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

Datasheet

43

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Characterization results

9.3

Protection functions

P_6.6.4

Overload condition in the low voltage area I_L5(SC)

=

f(T_J; V_S)

12.000

10.000

8.000

6.000

[A]

4.000

2.000

0.000

8V

28V

36V

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

Datasheet

44

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Characterization results

9.4

Diagnostic mechanism

P_7.5.2

Current sense at no loadI_IS= f(T_J; V_S)I_L= 0

Open load detection ON state threshold I_L(OL)= f(T_J)

1.400

11.000

10.500

10.000

9.500

1.200

1.000

0.800

9.000

[mA]

[µA]

0.600

8.500

0.400

0.200

0.000

8.000

8V

7.500

7.000

28V

36V

28V

36V

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

P_7.5.3

P_7.5.7

Sense signal at maximum voltageV_IS(AZ)= f(T_J; V_S)

Sense signal maximum current in fault condition

I_IS(FAULT)= f(T_J;V_S)

75.000

74.000

73.000

72.000

71.000

20.000

18.000

16.000

14.000

12.000

10.000

70.000

[V]

[mA]

8.000

6.000

69.000

68.000

4.000

67.000

8V

28V

2.000

66.000

36V

0.000

65.000

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

Datasheet

45

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Characterization results

9.5

Input pins

P_8.4.1

P_8.4.2

Input voltage threshold V_IN(L)= f(T_J;V_S)

Input voltage threshold V_IN(H)= f(T_J;V_S)

1.340

1.320

1.300

1.280

1.260

1.240

1.530

1.520

1.510

1.500

1.490

[V]

1.220

1.480

1.470

1.200

1.180

1.160

1.140

1.120

8V

1.460

1.450

28V

36V

28V

36V

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

P_8.4.3

P_8.4.5

Input voltage hysteresis V_IN(HYS)= f(T_J;V_S)

Input current high level I_IN(H)= f(T_J;V_S)

350.000

16.000

14.000

12.000

10.000

300.000

250.000

200.000

8.000

[µA]

[mV]

150.000

6.000

4.000

2.000

0.000

100.000

8V

50.000

28V

36V

28V

36V

0.000

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature [°C]

Datasheet

46

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Application information

10

Application information

Note:

The following information is given as a hint for the implementation of the device only and shall not be

regarded as a description or warranty of a certain functionality, condition or quality of the device.

V_BAT

Voltage Regulator

OUT

VS

GND

T₁

Z

C_VDD

C_VS

V_DD

VS

R_DEN

I/O

DEN

OUT0

OUT1

C_OUT

Relay

I/O

R^DSEL

DSEL0

DSEL1

86

85

30

87

R_DSEL

C_OUT

R_IN

I/O

IN0

IN1

IN2

IN3

Micro

controller

+

-

OUT2

OUT3

C_OUT

E.C.U.

OUT3

OUT4

C_OUT

R_SENSE

IS

A/D

GND

LED

R5W

GND

C_SENSE

D

Page-1

Figure 29

Application diagram with BTT6200-4ESA

Note:

This is a very simplified example of an application circuit. The function must be verified in the real

application.

Table 12

Bill of material

Reference

Value

Purpose

R_IN

10 kΩ

Protection of the microcontroller during overvoltage, reverse polarity

Guarantee BTT6200-4ESA channels OFF during loss of ground

R_DSEL

R_DEN

10 kΩ

Protection of the microcontroller during overvoltage, reverse polarity

Datasheet

47

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Application information

Table 12

Bill of material (continued)

Reference

Value

Purpose

R_PD

47 kΩ

Polarization of the output for short circuit to VS detection. Improve

BTT6200-4ESA immunity to electromagnetic noise

R_OL

1.5 kΩ

1.2 kΩ

10 kΩ

Polarization of the output during open load in OFF detection

Sense resistor

R_IS

R_SENSE

Overvoltage, reverse polarity, loss of ground. Value to be tuned with

microcontroller specification.

C_SENSE

C_OUT

R_LED

R_GND

D

100 pF

10 nF

680 Ω

27 Ω

Sense signal filtering

Protection of the device during ESD and BCI

Overvoltage protection of the LED. Value to be tuned with LED specification

Protection of the BTT6200-4ESA during overvoltage

Protection of the BTT6200-4ESA during reverse polarity

Protection of the device during overvoltage

BAS21

Z

58 V Zener

diode

CVS

T1

100 nF

Filtering of voltage spikes at the battery line

Dual NPN/PNP Switch the battery voltage for open load in OFF diagnostic

10.1

Further application information

•

Please contact us to get the pin FMEA

Existing App. Notes

For further information you may visit www.infineon.com

Datasheet

48

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Package outlines

11

Package outlines

1)

8.65±0.1

1)

3.9±0.1

D

0.1

2x

0.67±0.25

6±0.2

C

0.08 C

24x

SEATING COPLANARITY

PLANE

0.2 D

24x

2)

0.25±0.05

0.25

A

A-B C

24x

BOTTOM VIEW

D

0.15

24

13

24

1

12

1

INDEX

MARKING

6.4±0.1

B

0.15

A-B

0.65

1) DOES NOT INCLUDE PLASTIC OR METAL PROTRUSION OF 0.15 MAX. PER SIDE

2) DAMBAR PROTUSION SHALL BE MAXIMUM 0.1MM TOTAL IN EXCESS OF LEAD WIDTH

ALL DIMENSIONS ARE IN UNITS MM

THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [

]

Figure 30

PG-TSDSO-24 (Plastic dual small outline package)(RoHS-compliant)

Green product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with

government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-

free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Legal disclaimer for short-circuit capability

Infineon disclaims any warranties and liablilities, whether expressed or implied, for any short-circuit failures

below the threshold limit.

Datasheet

49

Rev. 1.00

2019-03-09

™

PROFET + 24V

BTT6200-4ESA

Revision history

Document

version

Date of

release

Description of changes

1.00

2019-03-09

Datasheet created

Datasheet

50

Rev. 1.00

2019-03-09

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2019-03-09

Published by

IMPORTANT NOTICE

WARNINGS

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”) .

With respect to any examples, hints or any typical values

stated herein and/or any information regarding the

application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities of

any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury

Infineon Technologies AG

81726 Munich, Germany

a written document signed by

©

2019 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-fst1527583024507

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.


型号：	BTT6200-4ESA
厂家：	Infineon
描述：	The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.
文件：	总51页 (文件大小：1248K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTT6200-4ESA [INFINEON]

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