BTS712N1XUMA1_技术文档

Smart High-Side Power Switch

PROFET BTS712N1

Data Sheet

Rev 1.3, 2010-03-16

Automotive Power

Smart High-Side Power Switch

BTS712N1

Smart Four Channel Highside Power Switch

Product Summary

Overvoltage Protection

Operating voltage

Features

V_bb(AZ)

43

5.0 ... 34

two parallel four parallel

V

•

Overload protection

V

bb(on)

Current limitation

active channels:

one

200

1.9

4

Short-circuit protection

Thermal shutdown

Overvoltage protection

On-state resistance R_ON

Nominal load current ꢀ_{ꢀꢁꢂꢃꢄꢅ}

100

2.8

4

50

4.4

4

mΩ

A

(including load dump)

Fast demagnetization of inductive loads

Current limitation

ꢀ_{ꢀꢁꢆꢇꢈꢅ}

ꢉ

•

1

)

Reverse battery protection

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis^ꢀ

Open drain diagnostic output

P-DSO-20

PG-DSO20

•

• Open load detection in OFF-state

•

CMOS compatible input

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

bb

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitive loads

Replaces electromechanical relays and discrete circuits

•

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Pin Definitions and Functions

Pin configuration (top view)

1,10,

11,12,

15,16,

19,20

3

Symbol Function

V

Positive power supply voltage. Design the

bb

V

1

2

3

4

5

•

20 V

19 V

18 OUT1

17 OUT2

bb

wiring for the simultaneous max. short circuit

currents from channel 1 to 4 and also for low

thermal resistance

GND1/2

IN1

ST1/2

IN2

bb

IN1

IN2

Input 1 .. 4, activates channel 1 .. 4 in case of

logic high signal

16 V

5

bb

GND3/4

IN3

ST3/4

IN4

6

7

8

9

15 V

14 OUT3

13 OUT4

7

9

18

17

14

13

4

IN3

IN4

bb

OUT1

OUT2

OUT3

OUT4

ST1/2

Output 1 .. 4, protected high-side power output

of channel 1 .. 4. Design the wiring for the

max. short circuit current

12 V

bb

V

10

11 V

bb

Diagnostic feedback 1/2 of channel 1 and

channel 2, open drain, low on failure

Diagnostic feedback 3/4 of channel 3 and

channel 4, open drain, low on failure

8

ST3/4

2

6

GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)

GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1)

With external current limit (e.g. resistor R =150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Data Sheet

2

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Block diagram

Four Channels; Open Load detection in off state;

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Data Sheet

3

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Maximum Ratings at T_j= 25°C unless otherwise specified

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 4)

V_bb

43

34

V

Supply voltage for full short circuit protection

T_j,start=-40 ...+150°C

Load current (Short-circuit current, see page 5)

I_L

self-limited

60

A

V

Load dump protection²⁾V_LoadDump= U_A+ V_s, U_A= 13.5 V V_Load

4⁾

R_I³⁾= 2 Ω, t_d= 200 ms; IN= low or high,

dump

each channel loaded with R_L= 7.1Ω,

Operating temperature range

Storage temperature range

Power dissipation (DC)⁵

(all channels active)

T_j

T_stg

-40 ...+150

-55 ...+150

°C

W

T_a= 25°C: P_tot

T_a= 85°C:

3.6

1.9

Inductive load switch-off energy dissipation, single pulse

V_bb=12V, T_j,start=150°C⁵⁾,

150

320

800

mJ

I_L= 1.9 A, Z_L= 66mH, 0Ω

I_L= 2.8 A, Z_L= 66mH, 0Ω

I_L= 4.4 A, Z_L= 66mH, 0Ω

see diagrams on page 9

one channel: E_AS

two parallel channels:

four parallel channels:

Electrostatic discharge capability (ESD)

(Human Body Model)

V_ESD

1.0

kV

Input voltage (DC)

V_IN

I_IN

I_ST

-10 ... +16

±2.0

V

mA

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagram page 8

±5.0

Thermal resistance

junction - soldering point^5),6)

each channel: R_thjs

16 K/W

junction - ambient⁵⁾

one channel active: R_thja

all channels active:

44

35

2)

Supply voltages higher than V_bb(AZ)require an external current limit for the GND and status pins, e.g. with a

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input

protection is integrated.

3)

4)

5)

R = internal resistance of the load dump test pulse generator

V_{Load dump}is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for V

I

bb

connection. PCB is vertical without blown air. See page 14

Data Sheet

4

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

bb

min

--

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (V to OUT)

bb

mΩ

I_L= 1.8 A

each channel,

T_j= 25°C: R_ON

T_j= 150°C:

165

320

200

400

two parallel channels, T_j= 25°C:

four parallel channels, T_j= 25°C:

83

42

100

50

--

Nominal load current

one channel active: I_L(NOM)

two parallel channels active:

four parallel channels active:

1.7

2.6

4.1

1.9

2.8

4.4

A

Device on PCB⁵⁾, T_a= 85°C, T_j≤ 150°C

Output current while GND disconnected or pulled

I_L(GNDhigh)

--

10

mA

up; V = 30 V, V = 0, see diagram page 9

bb

IN

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

80

200

400

µs

R_L= 12 Ω, T =-40...+150°C

j

Slew rate on

10 to 30% V_OUT, R_L= 12 Ω,

dV/dt_on

0.1

--

1

V/µs

T =-40...+150°C:

j

Slew rate off

70 to 40% V_OUT, R_L= 12 Ω,

-dV/dt_off

T =-40...+150°C:

j

Operating Parameters

Operating voltage⁷⁾

T_j=-40...+150°C: V_bb(on)

T_j=-40...+150°C: V_bb(under)

T_j=-40...+25°C: V_{bb(u rst)}

T_j=+150°C:

5.0

3.5

--

34

5.0

7.0

V

Undervoltage shutdown

Undervoltage restart

Undervoltage restart of charge pump

V_bb(ucp)

--

5.6

0.2

7.0

V

see diagram page 14

T_j=-40...+150°C:

Undervoltage hysteresis

∆V_bb(under)= V_{bb(u rst)}- V_bb(under)

∆V_bb(under)

--

Overvoltage shutdown

Overvoltage restart

Overvoltage hysteresis

Overvoltage protection⁸⁾

I_bb= 40 mA

T_j=-40...+150°C: V_bb(over)

T_j=-40...+150°C: V_{bb(o rst)}

T_j=-40...+150°C: ∆V_bb(over)

T_j=-40...+150°C: V_bb(AZ)

34

33

--

43

--

V

0.5

47

--

42

--

7)

At supply voltage increase up to V =5.6V typ without charge pump, V

≈V - 2 V

bb

OUT

8)

see also V

in circuit diagram on page 8.

ON(CL)

Data Sheet

5

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Parameter and Conditions, each of the four channels Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

bb

min

typ

max

Standby current, all channels off

V_IN= 0

T_j=25°C

T_j=150°C:

:

I_bb(off)

--

180

160

300

µA

Operating current ⁹⁾, V_IN= 5V, _j=-40...+150°C

T

I_GND

-- 0.35

0.8

2.8

mA

A

I_GND= I_GND1/2+ I_GND3/4

,

one channel on:

four channels on:

--

1.2

Protection Functions¹⁰⁾

Initial peak short circuit current limit, (see timing

each channel, _j=-40°C: I_L(SCp)

diagrams, page 12)

5.5

4.5

2.5

9.5

7.5

4.5

13

11

7

T

_j=25°C:

T

_j=+150°C:

T

two parallel channels

four parallel channels

twice the current of one channel

four times the current of one channel

Repetitive short circuit current limit,

T_j= T_jt

each channel I_L(SCr)

--

4

--

A

two parallel channels

four parallel channels

(see timing diagrams, page 12)

Initial short circuit shutdown time

T_j,start=-40°C: t_off(SC)

T_j,start= 25°C:

--

48

29

--

ms

V

(see page 10 and timing diagrams on page 12)

Output clamp (inductive load switch off)¹¹⁾

at V_ON(CL)= V_bb- V_OUT

V_ON(CL)

--

47

--

Thermal overload trip temperature

Thermal hysteresis

T_jt

150

--

°C

K

∆T_jt

10

Reverse Battery

)

Reverse battery voltage ¹²

-V_bb

--

32

--

V

Drain-source diode voltage (V > V

)

bb

-V_ON

610

mV

out

_L=-1.9A, T =+150°C

j

I

Diagnostic Characteristics

Open load detection current

Open load detection voltage

I_L(off)

--

2

30

3

--

4

µA

T_j=-40..+150°C: V_OUT(OL)

V

9)

Add I , if I > 0

ST

10)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not

designed for continuous repetitive operation.

11)

12)

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

V

ON(CL)

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 3 and circuit page 8).

Data Sheet

6

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Parameter and Conditions, each of the four channels Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

bb

min

typ

max

Input and Status Feedback¹³⁾

Input resistance

R_I

2.5

1.7

1.5

3.5

--

6

3.5

--

kΩ

V

(see circuit page 8)

T_j=-40..+150°C:

Input turn-on threshold voltage

V_IN(T+)

V_IN(T-)

∆ V_IN(T)

T_j=-40..+150°C:

Input turn-off threshold voltage

--

V

Input threshold hysteresis

--

1

0.5

--

V

Off state input current

T_j=-40..+150°C:

V_IN= 0.4 V: I_IN(off)

V_IN= 5 V: I_IN(on)

t_{d(ST OL3)}

50

µA

On state input current

T_j=-40..+150°C:

20

--

50

90

--

µA

µs

Delay time for status with open load

(see timing diagrams, page 12)

220

Status output (open drain)

Zener limit voltage T_j=-40...+150°C, I_ST= +1.6 mA: V_ST(high)

5.4

--

6.1

--

0.4

0.6

V

ST low voltage

T_j=-40...+25°C, I_ST= +1.6 mA: V_ST(low)

T_j= +150°C, I_ST= +1.6 mA:

13)

If ground resistors R

are used, add the voltage drop across these resistors.

GND

Data Sheet

7

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Truth Table

Channel 1 and 2

Channel 3 and 4

IN1

IN3

IN2

IN4

OUT1

OUT3

OUT2

OUT4

ST1/2

ST3/4

ST1/2

ST3/4

Chip 1

Chip 2

(equivalent to channel 1 and 2)

BTS 711L1 BTS 712N1

Normal operation

Open load

L

H

L

H

L

H

L

H

L

H

Z

H

L

H

L

H

L

H

L

14)

Channel 1 (3)

H(L

)

H

X

H

X

H

L

14)

Channel 2 (4)

Channel 1 (3)

L

H

X

L

H

L

H

L

H

X

L

H

X

H

Z

H

L

H

X

H(L

)

L

H

L

15)

Short circuit to V

Overtemperature

L

bb

L

H

16)

15)

H(L

)

15)

Channel 2 (4)

both channel

L

H

X

L

X

H

L

H

X

L

H

L

H

X

L

H

X

L

H

X

L

X

L

H

L

X

L

H

L

H

L

H

L

H

16)

H(L

)

H

L

H

L

H

L

Channel 1 (3)

Channel 2 (4)

Undervoltage/ Overvoltage

H

L = "Low" Level

H = "High" Level

X = don't care

Z = high impedance, potential depends on external circuit

Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and

outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4

have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

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Leadframe (V ) is connected to pin 1,10,11,12,15,16,19,20

bb

External R

optional; two resistors R

,R

=150 Ω or a single resistor R

=75 Ω for

GND

GND1/2

GND3/4

GND

reverse battery protection up to the max. operating voltage.

14)

15)

With additional external pull up resistor

An external short of output to V_bbin the off state causes an internal current from output to ground. If R_GNDis

used, an offset voltage at the GND and ST pins will occur and the V_{ST low}signal may be errorious.

16)

Low resistance to V may be detected by no-load-detection

bb

Data Sheet

8

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Overvoltage protection of logic part

GND1/2 or GND3/4

Input circuit (ESD protection), IN1...4

#

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ESD zener diodes are not to be used as voltage clamp at

DC conditions. Operation in this mode may result in a drift of

the zener voltage (increase of up to 1 V).

%ꢅꢌ

#

%ꢅꢌ

ꢇꢒꢑꢙꢖꢔꢀ%ꢅꢌ

Status output, ST1/2 or ST3/4

V

Z1

= 6.1 V typ., V = 47 V typ., R = 3.5 kΩ typ.,

Z2

I

R

GND

= 150 Ω

ꢁ)ꢂ

#

ꢇꢈ0ꢍꢅ2

ꢇꢈ

Reverse battery protection

ꢟꢀ)ꢂ

ꢂ

ꢃꢃ

3

ꢋꢇꢌ3

4ꢌ

#

ꢇꢈ

ꢆꢇꢊꢋꢌ

%ꢅꢌ

#

ꢄ

ꢄꢅ

ꢇꢈ

ꢍꢎꢈ

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R

ST(ON)

< 380 Ω

at 1.6 mA, ESD zener diodes are not to be used as voltage

clamp at DC conditions. Operation in this mode may result in

a drift of the zener voltage (increase of up to 1 V).

5ꢐ7ꢗꢚ

ꢄꢙ ꢗꢚꢘꢗ

ꢌꢒꢐꢝꢗ

%ꢅꢌ

#

ꢏ

%ꢅꢌ

Inductive and overvoltage output clamp,

OUT1...4

5ꢐ7ꢗꢚꢀ%ꢅꢌ

ꢇꢒꢑꢙꢖꢔꢀ%ꢅꢌ

R

GND

= 150 Ω, R = 3.5 kΩ typ,

I

ꢁꢂ

ꢃꢃ

Temperature protection is not active during inverse current

operation.

ꢂ

4

ꢂ

ꢍꢅ

Open-load detection, OUT1...4

ꢍꢎꢈ

OFF-state diagnostic condition:

V

OUT

> 3 V typ.; IN low

5#ꢍ6ꢋꢈ

5ꢐ7ꢗꢚꢀ%ꢅꢌ

V

ON

clamped to V = 47 V typ.

ON(CL)

ꢍ66

ꢄ

ꢂ

ꢏ0ꢍꢏ2

ꢍꢎꢈ

ꢂꢍꢎꢏꢐꢑꢇꢈꢉ

ꢉꢎꢒꢎꢌꢒꢋꢇꢏ

ꢏꢐꢑꢒꢓ

ꢛꢙꢒꢕ

ꢇꢒꢑꢙꢖꢔꢀ%ꢅꢌ

Data Sheet

9

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Inductive load switch-off energy

GND disconnect

dissipation

ꢃꢃ

(channel 1/2 or 3/4)

ꢋ

ꢐ

ꢋ

9ꢇ

ꢄ

ꢃꢃ

ꢂ

ꢃꢃ

ꢋ

ꢏꢐꢖꢝ

ꢂ

ꢃꢃ

ꢂ

ꢃꢃ

ꢄꢅꢆ

ꢄꢅꢊ

ꢇꢈ

ꢄꢅ

ꢍꢎꢈꢆ

ꢍꢎꢈꢊ

ꢀꢁꢂꢃꢄꢅ

ꢍꢎꢈ

ꢀꢁꢂꢃꢄꢅ

ꢏ

ꢓ

ꢇꢈ

ꢋ

ꢏ

%ꢅꢌ

4

ꢏ

ꢀ

ꢂ

ꢄꢅꢆ ꢄꢅꢊ

ꢂ

%ꢅꢌ

ꢂ

ꢇꢈ

ꢋ

#

ꢏ

Energy stored in load inductance:

Any kind of load. In case of IN=high is V

OUT

≈ V -V

.

IN IN(T+)

Due to V

GND

> 0, no V = low signal available.

ST

2

L

1

E =

L

/

·L·I

2

While demagnetizing load inductance, the energy

dissipated in PROFET is

GND disconnect with GND pull up

(channel 1/2 or 3/4)

E = E_bb+ E_L- E_R=

AS

V

·i (t) dt,

ON(CL) L

ꢂ

ꢃꢃ

with an approximate solution for R > 0Ω:

L

ꢄꢅꢆ

ꢍꢎꢈꢆ

ꢍꢎꢈꢊ

ꢂ

I ·L

L

I ·R

L L

OUT(CL)

ꢄꢅꢆ

E =

AS

(V

+|V |) ꢀꢁꢂ(1+

OUT(CL)

)

ꢀꢁꢂꢃꢄꢅ

bb

ꢄꢅꢊ

ꢇꢈ

2·R

|V

|

L

ꢂ

ꢄꢅꢊ

%ꢅꢌ

Maximum allowable load inductance for

5)

a single switch off (one channel)

ꢂ

%ꢅꢌ

ꢇꢈ

ꢂ

ꢀꢁꢂꢁꢃꢁꢄꢅ ꢆꢇꢁT

= 150°C, V = 12 V, R = 0 Ω

ꢀꢁ

j,start

bb

L

ꢃꢃ

L [mH]

ꢆ...

Any kind of load. If V

> V - V

IN

device stays off

GND

IN(T+)

Due to V

GND

> 0, no V = low signal available.

ST

V

disconnect with energized inductive

bb

load

ꢆ..

ꢂ

ꢃꢃ

ꢄꢅꢆ

ꢍꢎꢈꢆ

ꢞꢒꢑꢞ

ꢀꢁꢂꢃꢄꢅ

ꢄꢅꢊ

ꢍꢎꢈꢊ

ꢇꢈ

%ꢅꢌ

ꢆ.

ꢂ

ꢃꢃ

For an inductive load current up to the limit defined by E

(max. ratings see page 3 and diagram on page 9) each

AS

ꢆ

switch is protected against loss of V

.

bb

ꢆ$)

ꢊ

ꢊ$)

'

Consider at your PCB layout that in the case of Vbb dis-

connection with energized inductive load the whole load

current flows through the GND connection.

I

[A]

L

Data Sheet

10

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Typ. ground pin operating current

Typ. on-state resistance

V

= high (one channel on)

; I = 1.8 A, IN = high

IN

L

I

[mA]

R

[mOhm]

GND

ON

V

bb

[V]

V

bb

[V]

Typ. initial short circuit shutdown time

Typ. standby current

; V =12 V

; V = 9...34 V, IN

1...4

= low

bb

I

[µA]

bb(off)

t_{off(S C)}[msec]

60

50

40

30

20

10

0

40

-25

0

25

50

75

100

125

150

T_{j, s tart}[°C]

T [°C]

j

I

includes four times the current I

of the open

L(off)

bb(off)

load detection current sources.

Data Sheet

11

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Timing diagrams

Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams

are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently

the diagrams are valid for each channel as well as for permuted channels

Figure 1a: V turn on:

Figure 2b: Switching an inductive load,

bb

ꢄꢅꢆ

ꢄꢅ

ꢄꢅꢊ

ꢂ

ꢃꢃ

ꢇꢈ

ꢂ

ꢍꢎꢈꢆ

ꢂ

ꢍꢎꢈ

ꢂ

ꢍꢎꢈꢊ

ꢄ

L

ꢇꢈꢀꢐꢜꢗꢙꢀꢝꢚꢖꢒꢙ

ꢕ

Figure 3a: Turn on into short circuit:

Figure 2a: Switching a lamp:

shut down by overtemperature, restart by cooling

ꢄꢅꢆ

ꢐꢕꢞꢗꢚꢀꢓꢞꢖꢙꢙꢗꢔ:ꢀꢙꢐꢚ"ꢖꢔꢀꢐꢜꢗꢚꢖꢕꢒꢐꢙ

ꢄꢅ

ꢇꢈ

ꢄ

ꢏꢆ

ꢄ

ꢏ0ꢇ&ꢜ2

ꢂ

ꢍꢎꢈ

ꢄ

ꢏ0ꢇ&ꢚ2

ꢄ

ꢏ

ꢕ

ꢐ!!0ꢇ&2

ꢇꢈ

ꢕ

Heating up of the chip may require several milliseconds, depending

on external conditions (t vs. T see page 11)

The initial peak current should be limited by the lamp and not by

the initial short circuit current I_L(SCp)= 7.5 A typ. of the device.

off(SC)

j,start

Data Sheet

12

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Figure 3b: Turn on into short circuit:

Figure 5a: Open load: detection in OFF-state, turn

shut down by overtemperature, restart by cooling

(two parallel switched channels 1 and 2)

on/off to open load

ꢄꢅꢆ

ꢄꢅꢆꢉꢊ

ꢄꢅꢊꢀꢀꢀꢀꢀꢀꢀꢀꢓꢞꢖꢙꢙꢗꢔꢀꢊ:ꢀꢙꢐꢚ"ꢖꢔꢀꢐꢜꢗꢚꢖꢕꢒꢐꢙ

ꢄꢀꢀꢀꢀꢁꢀꢄ

ꢏꢆꢀꢀꢀꢀꢀꢀꢀꢀꢏꢊ

ꢄ

ꢏ0ꢇ&ꢜ2

ꢂ

ꢍꢎꢈꢆ

ꢄ

ꢏ0ꢇ&ꢚ2

ꢄ_ꢏꢆ

ꢓꢞꢖꢙꢙꢗꢔꢀꢆ:ꢀꢐꢜꢗꢙꢀꢔꢐꢖꢝ

ꢕ

ꢐ!!0ꢇ&2

ꢇꢈꢆꢉꢊ

ꢕ

d(ST OL3)

ꢝ0ꢇꢈꢀꢍꢏ'2

ꢇꢈ

ꢕ

t_d(ST,OL3)depends on external circuitry because of high

impedance

*) I_L= 30 µA typ

Figure 4a: Overtemperature:

Reset if T <T

j

jt

Figure 6a: Undervoltage:

ꢄꢅ

ꢇꢈ

ꢂ

ꢃꢃ

V

bb(u cp)

bb(under)

ꢂ

bb(u rst)

ꢂ

ꢍꢎꢈ

ꢂ _ꢍꢎꢈ

ꢈ

;

ꢇꢈꢀꢐꢜꢗꢙꢀꢝꢚꢖꢒꢙ

ꢕ

Data Sheet

13

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Figure 6b: Undervoltage restart of charge pump

ꢂ_ꢍꢅ0&ꢏ2

ꢂ_ꢐꢙ

ꢂ

ꢃꢃ0ꢐ ꢗꢚ2

ꢂ

ꢃꢃ0ꢐꢀꢚꢘꢕ2

ꢃꢃ0ꢛꢀꢚꢘꢕ2

ꢂ

ꢃꢃ0ꢛꢀꢓꢜ2

ꢂ

ꢃꢃ0ꢛꢙꢝꢗꢚ2

ꢂ_ꢃꢃ

bb(o rst)

ꢕ

IN = high, normal load conditions.

Charge pump starts at V_bb(ucp)= 5.6V typ.

Figure 7a: Overvoltage:

ꢄꢅ

V_ON(CL)

V

ꢂ

bb(over)

bb

ꢂ

ꢍꢎꢈ

ꢇꢈ

Data Sheet

14

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Package Outlines

0.35 x 45˚

1)

7.6 _-0.2

+0.09

0.23

8˚ max

0.4 ^+0.8

1.27

0.35 ^+0.152)

10.3 ^±0.3

0.1

0.2 24x

11

20

1

GPS05094

10

1)

12.8_-0.2

Index Marking

1) Does not include plastic or metal protrusions of 0.15 max per side

2) Does not include dambar protrusion of 0.05 max per side

Figure 1

PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with

government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-

free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our

Infineon Internet Page “Products”: http://www.infineon.com/products.

Dimensions in mm

Data Sheet

15

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

BTS712N1

Revision History

Version

Rev 1.3

Rev 1.2

Date

2010-03-16

2009-07-13

Changes

page 6: changed reference to the timing diagram

page 1: added new coverpage

page 6: Initial short circuit shutdown time changed:

toff(SC) -40 °C to 48 ms

toff(SC) 25 °C to 29 ms

page 11: changed graphic

V1.1

2007-08-30

Creation of the green datasheet.

First page :

Adding the green logo and the AEC qualified

Adding the bullet AEC qualified and the RoHS compliant features

Package page

Modification of the package to be green.

Data Sheet

16

Rev 1.3, 2010-03-16

Edition 2010-03-16

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values

stated herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.


型号：	BTS712N1XUMA1
厂家：	Infineon
描述：	Buffer/Inverter Based Peripheral Driver, 0.3A, MOS, PDSO20, GREEN, PLASTIC, SOP-20 光电二极管
文件：	总17页 (文件大小：1382K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTS712N1XUMA1 [INFINEON]

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