BTS5215LAUMA1 [INFINEON]
Buffer/Inverter Based Peripheral Driver, 7.4A, PDSO12, GREEN, PLASTIC, SOP-12;型号: | BTS5215LAUMA1 |
厂家: | Infineon |
描述: | Buffer/Inverter Based Peripheral Driver, 7.4A, PDSO12, GREEN, PLASTIC, SOP-12 驱动 光电二极管 接口集成电路 |
文件: | 总16页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Smart High-Side Power Switch
BTS5215L
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ꢑꢏꢎꢅꢒꢉꢂꢓꢓꢌꢔꢕꢖꢅꢗꢅꢘꢅꢙꢚꢁΩꢅ
ꢀꢄꢂꢄꢛꢕꢅꢜꢌꢌꢋꢝꢂꢐꢞꢅ
Product Summary
Package
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• AEC qualified
• Green product (RoHS compliant)
Data Sheet
1
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
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8ꢚ7ꢉ
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ꢈꢄꢅꢂꢉ
ꢓꢋꢇꢅꢃꢋꢌꢉ
:ꢉ
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ꢁꢞꢜꢁꢉ
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ꢔꢋꢌꢅꢄꢈꢂꢉꢖꢞꢁꢁꢌ1ꢉ
ꢓꢌꢄꢜꢁꢉ/ꢋꢃꢉ
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control and protection circuit
equivalent to
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channel 1
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Data Sheet
2
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Pin Definitions and Functions
Pin configuration
Pin
1
2
4
3
Symbol Function
(top view)
GND
IN1
IN2
Ground of chip
Input 1,2 activates channel 1,2 in case of logic
high signal
GND 1•
12 V
bb
IN1
ST1
IN2
2
3
4
5
6
11 NC
10 OUT1
9 NC
ST1
ST2
Diagnostic feedback 1 & 2 of channel 1,2
open drain, low on failure
Vbb*
5
6,12,
heat
slug
V
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
bb
ST2
8 OUT2
7 NC
V
bb
* heat slug
7,9,11 NC
Not Connected
8
10
OUT2
OUT1
Output 1,2 protected high-side power output
of channel 1 and 2. Design the wiring for the
max. short circuit current
Data Sheet
3
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
Vbb
Vbb
43
36
V
V
Load current (Short-circuit current, see page 6)
IL
self-limited
60
A
V
3)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoaddump
RI2) = 2 Ω, td = 400 ms; IN= low or high,
each channel loaded with RL = 13.5 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
Tj
Tstg
-40 ...+150
-55 ...+150
°C
W
Ta = 25°C: Ptot
Ta = 85°C:
3.1
1.6
(all channels active)
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C4), see diagrams on page 10
21.3
10
mH
kV
IL = 3.5 A, EAS = 178 mJ, 0Ω
IL = 7.0 A, EAS = 337 mJ, 0Ω
Electrostatic discharge capability (ESD)
(Human Body Model)
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
one channel: ZL
two parallel channels:
IN:
VESD
1.0
4.0
8.0
ST:
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
VIN
IIN
-10 ... +16
0.3
V
mA
Pulsed current through input pin5)
Current through status pin (DC)
IINp
IST
5.0
5.0
1)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2)
3)
4)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air. See page 14
5)
only for testing
Data Sheet
4
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
junction - Case6)
each channel: RthjC
Rthja
one channel active:
all channels active:
K/W
--
--
--
--
--
--
45
40
5
--
--
--
junction – ambient6)
@ 6 cm2 cooling area
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (V to OUT); I = 2 A
L
bb
each channel,
--
--
mΩ
Tj = 25°C: RON
Tj = 150°C:
70
140
90
180
--
two parallel channels, Tj = 25°C:
35
45
--
see diagram, page 11
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
3.7
7.4
4.7
9.5
A
6)
Device on PCB , T = 85°C, T ≤ 150°C
a
j
Output current while GND disconnected or pulled up7);
IL(GNDhigh)
--
--
2
mA
V
= 32 V, V = 0,
IN
bb
see diagram page 9
Turn-on time8)
Turn-off time
RL = 12 Ω
Slew rate on8)
Slew rate off8)
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
--
--
100
100
250
270
µs
10 to 30% VOUT, RL = 12 Ω: dV/dton
70 to 40% VOUT, RL = 12 Ω: -dV/dtoff
0.2
0.2
--
--
1.0 V/µs
1.1 V/µs
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 14
not subject to production test, specified by design
6)
bb
7)
8)
See timing diagram on page 12.
Data Sheet
5
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Operating Parameters
Operating voltage
Undervoltage switch off9
Vbb(on)
Vbb(u so)
5.5
--
--
--
40
4.5
V
V
)
Tj =-40°C...25°C
:
Tj =125°C:
--
41
-- 4.510)
Overvoltage protection11)
Ibb = 40 mA
Vbb(AZ)
Ibb(off)
47
52
V
)
Standby current12
Tj =-40°C...25°C
:
--
--
--
--
4.5
--
10
15
µA
VIN = 0; see diagram page 11
Tj =150°C:
Tj =125°C:
-- 1010)
Off-State output current (included in Ibb(off)
VIN = 0; each channel
)
IL(off)
1
5
µA
Operating current 13), VIN = 5V,
IGND
--
--
0.6
1.2
1.2
2.4
mA
one channel on:
all channels on:
Protection Functions14)
Current limit, = 0V, (see timing diagrams, page 12)
V
out
j =-40°C: IL(lim)
--
--
9
--
15
--
23
A
A
T
j =25°C:
T
j =+150°C:
T
----
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two channels
--
--
12
12
--
--
(see timing diagrams, page 12)
Initial short circuit shutdown time
Tj,start =25°C: toff(SC)
--
2
--
ms
V
V
= 0V
(see timing diagrams on page 12)
out
Output clamp (inductive load switch off)15)
VON(CL)
41
47
52
at V
ON(CL)
= V - V , I = 40 mA
bb OUT L
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
150
--
--
10
--
--
°C
K
9)
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
10)
11)
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also V
circuit diagram on page 9.
Measured with load; for the whole device; all channels off
in table of protection functions and
ON(CL)
12)
13)
14
Add I , if I > 0
ST
ST
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
15)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
Data Sheet
6
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Reverse Battery
)
Reverse battery voltage 16
-Vbb
-VON
--
--
--
600
32
--
V
mV
Drain-source diode voltage (V > V
)
bb
out
L =-2.0A, T =+150°C
j
I
Diagnostic Characteristics
Open load detection voltage
V OUT(OL)
1.7
2.5
2.8
4.0
4.0
6.0
V
1
Input and Status Feedback17)
Input resistance
(see circuit page 9)
RI
kΩ
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
VIN(T+)
VIN(T-)
∆ VIN(T)
td(STon)
--
1.0
--
--
--
0.2
10
2.5
--
--
V
V
V
Status change after positive input slope18)
--
20
3s
with open load
Status change after positive input slope18)
with overload
Status change after negative input slope
with open load
td(STon)
td(SToff)
td(SToff)
30
--
--
--
--
--
500
20
3s
3s
3s
Status change after negative input slope18)
--
with overtemperature
Off state input current
On state input current
Status output (open drain)
Zener limit voltage
VIN = 0.4 V: IIN(off)
VIN = 5 V: IIN(on)
5
10
--
35
20
60
µA
µA
IST = +1.6 mA: VST(high)
IST = +1.6 mA: VST(low)
5.4
--
--
--
--
0.6
V
ST low voltage
16)
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
17)
18)
If ground resistors R
are used, add the voltage drop across these resistors.
GND
not subject to production test, specified by design
Data Sheet
7
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Truth Table
( each channel )
IN
OUT
ST
Normal operation
Open load
L
H
L
L
H
Z
H
H
19)
L
H
H
H
H
L
Overtemperature
L
H
L
L
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.
Terms
ꢍꢍ
ꢊ
ꢀꢚ)
)*.=
!ꢂꢄꢝ/ꢃꢄꢜꢂ
ꢊ
ꢊ
ꢀꢚ*
ꢍꢍ
ꢚ)
ꢚ*
ꢊ
ꢍꢍ
*
ꢚ)
!)
)ꢑ
<
ꢀ9-)
ꢀ9-*
ꢐ
%
ꢍ)*ꢜ+ꢑ
ꢚ*
(-)
(-*
!*
(-)
(-*
ꢊ
ꢊ
ꢚ) ꢚ*
ꢎ
8ꢚ7
)
ꢊ
ꢀ9-)
ꢊ
ꢊ
(-)
(-*
ꢊ
ꢀ9-*
8ꢚ7
ꢙ
8ꢚ7
Leadframe (V ) is connected to pin 6,12
bb
External R
optional; single resistor R
=150 Ω for reverse battery protection up to the max.
GND
GND
operating voltage.
19)
L, if potential at the Output exceeds the OpenLoad detection voltage
Data Sheet
8
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Overvolt. and reverse batt. protection
Input circuit (ESD protection), IN1 or IN2
:ꢉꢎꢊ
:ꢉꢊ
ꢍꢍ
ꢙ
ꢙ
ꢚ
(-
ꢊ
>*
ꢙ
ꢚ
,(7ꢘ>7
%ꢎꢈꢇꢐ
(-
ꢀ9-
ꢙ
8ꢚ7
(-
ꢊ
>)
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
8ꢚ7
ꢙ
!ꢋꢄꢝ
ꢙ
8ꢚ7
(ꢆꢈꢇꢄꢌꢉ8ꢚ7
!ꢋꢄꢝꢉ8ꢚ7
Status output, ST1 or ST2
V
Z1
= 6.1 V typ., V = 47 V typ., R = 150 Ω,
GND
Z2
R
= 15 kΩ, R = 3.5 kΩ typ.
ST
I
:ꢎꢊ
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
ꢙ
(-"ꢀꢚ$
(-
Open-load detection, OUT1 or OUT2
,(7ꢘ
>7
OFF-state diagnostic condition:
8ꢚ7
Open Load, if V
> 3 V typ.; IN low
OUT
ESD-Zener diode: 6.1 V typ., max 0.3 mA; R
ST(ON)
< 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
ꢊ
ꢍꢍ
ꢙ
,?-
Inductive and overvoltage output clamp,
OUT1 or OUT2
ꢀ++
ꢊ
ꢀ9-
:ꢊ
ꢍꢍ
*"ꢌꢓꢅꢔꢎꢂꢋ
ꢋꢌꢄꢌꢐꢄꢇꢎꢓ
ꢊ
>
!ꢋꢈꢆꢓ
ꢞꢇꢆꢅ
ꢊ
ꢀꢚ
(ꢆꢈꢇꢄꢌꢉ8ꢚ7
ꢀ9-
GND disconnect
ꢅ
2ꢋꢗꢂꢃꢉ8ꢚ7
V
ON
clamped to V = 47 V typ.
ON(CL)
ꢊ
ꢍꢍ
ꢚ
ꢀ9-
ꢍ)*ꢜ+ꢑ
(-
8ꢚ7
ꢊ
ꢊ
ꢊ
ꢊ
ꢍꢍ
ꢚ
(-
8ꢚ7
Any kind of load. In case of IN=high is V
OUT
≈ V -V .
IN IN(T+)
Due to V
> 0, no V = low signal available.
GND
ST
Data Sheet
9
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Inductive load switch-off energy
GND disconnect with GND pull up
ꢅ
dissipation
ꢍꢍ
,
ꢊ
,
ꢍꢍ
ꢚ
ꢒ(
,
!ꢋꢄ
ꢀ9-
ꢍ)*ꢜ+ꢑ
ꢊ
ꢍꢍ
ꢚ
(-
8ꢚ7
ꢀ9-
ꢍ)*ꢜ+ꢑ
!
,
(-
,
!
ꢊ
ꢊ
8ꢚ7
ꢊ
ꢊ
ꢚ (-
8ꢚ7
ꢍꢍ
>
!
ꢀ
,
ꢙ
ꢙ
!
Any kind of load. If V
> V - V device stays off
IN IN(T+)
GND
Due to V
> 0, no V = low signal available.
ST
GND
Energy stored in load inductance:
2
L
1
E = / ·L·I
V
disconnect with energized inductive
L
2
bb
load
While demagnetizing load inductance, the energy
dissipated in PROFET is
E = Ebb + EL - ER= VON(CL)·i (t) dt,
AS
L
ꢊ
ꢕꢆꢈꢕ
ꢍꢍ
ꢚ
with an approximate solution for R > 0Ω:
L
ꢀ9-
ꢍ)*ꢜ+ꢑ
I ·L
L
I ·R
L L
E =
AS
(V +|V
|) ꢀꢁꢂ(1+
)
OUT(CL)
bb
2·R
|V
OUT(CL)
|
(-
L
8ꢚ7
Maximum allowable load inductance for
4)
a single switch off (one channel)
ꢊ
ꢍꢍ
ꢀꢁꢂꢁꢃꢁꢄꢅ ꢆꢇꢁT
= 150°C, V = 12 V, R = 0 Ω
ꢀꢁ j,start
bb L
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
Z [mH]
L
)ꢑꢑꢑ
)ꢑꢑ
)ꢑ
protected against loss of V
.
bb
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
)
)
*
%
ꢐ
ꢎ
=
I
[A]
L
Data Sheet
10
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Typ. on-state resistance
ꢈ
ꢉꢊ
ꢁꢂꢁꢃꢁꢄꢋ ꢍꢎ ꢆ; I = 2 A, IN = high
L
ꢌꢌ ꢏꢁ
R
[mOhm]
ON
-@ꢉAꢉ)ꢎꢑꢟ'
)=ꢑ
)*ꢑ
<ꢑ
ꢐꢑ
ꢑ
*ꢎꢟ'
ꢘꢐꢑꢟ'
ꢎꢉꢉꢉꢉꢉꢉꢉ&ꢉꢉꢉꢉꢉꢉꢉꢛꢉꢉꢉꢉꢉꢉꢉ))
%ꢑ
ꢐꢑ
V
bb
[V]
Typ. standby current
ꢅ ꢁꢂꢁꢃꢁꢄꢎ ꢆ; V = 9...34 V, IN1,2 = low
ꢌꢌꢄꢐꢃꢃꢆ ꢏꢁ bb
I
[µA]
bb(off)
ꢐꢎ
ꢐꢑ
%ꢎ
%ꢑ
*ꢎ
*ꢑ
)ꢎ
)ꢑ
ꢎ
ꢑ
ꢘꢎꢑ
ꢑ
ꢎꢑ
)ꢑꢑ
)ꢎꢑ
*ꢑꢑ
T [°C]
j
Data Sheet
11
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
Figure 2b: Switching a lamp:
Figure 1a: V turn on:
bb
ꢚ)
ꢚ
ꢚ*
ꢊ
(-
ꢊ
ꢍꢍ
ꢊ
ꢀ9-)
ꢀ9-
ꢊ
ꢀ9-*
(-)ꢉꢋꢁꢂꢇꢉꢝꢃꢄꢆꢇ
(-*ꢉꢋꢁꢂꢇꢉꢝꢃꢄꢆꢇ
!
ꢅ
ꢅ
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
ꢚ)
ꢋꢅꢕꢂꢃꢉꢓꢕꢄꢇꢇꢂꢌEꢉꢇꢋꢃꢜꢄꢌꢉꢋꢁꢂꢃꢄꢅꢆꢋꢇ
ꢚ
ꢊꢀ9-
!)
ꢛꢑC
!"ꢌꢆꢜ$
ꢅ
ꢝꢊDꢝꢅꢋ//
on
!"('ꢃ$
ꢅ
ꢝꢊDꢝꢅꢋꢇ
off
)ꢑC
ꢅ
ꢋ//"('$
(-
!
ꢅ
Heating up of the chip may require several milliseconds, depending
on external conditions
ꢅ
Data Sheet
12
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
(two parallel switched channels 1 and 2)
Open load of channel 1; other channels normal
operation
ꢚ)D*
ꢚ)
ꢉꢉꢉꢉ:ꢉ
!)ꢉꢉꢉꢉꢉ!*
ꢊ
ꢀ9-)
*6
!"ꢌꢆꢜ$
!)
!"('ꢃ$
(-
ꢅ
ꢋ//"('$
(-)D*
)ꢑ3ꢖ
ꢎꢑꢑ3ꢖ
ꢅ
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation
Figure 4a: Overtemperature:
Reset if T <T
j
jt
ꢚ)
'(
(-
ꢀꢑ
%ꢑ3ꢖ
*ꢑ3ꢖ
/
*-ꢑ
ꢑ
.
ꢄ
Data Sheet
13
V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
Package Outlines
1)
1)
0.1
0.1
6.4
8˚
7.5
A
B
8˚
C
0.1
1
0.1 C 12x
Seating Plane
0.15
0.7
5 x 1 = 5
0.4 +0.13
(0.2)
(4.4)
M
0.25
7
C A B
0.3
10.3
0.1
0.25 B
5.1
12
4)
ø0.8 x 0.1-0.05 Depth
1
7.8
6
0.1
(Heatslug)
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Stand OFF
3) Stand OUT
4) Pin 1 Index Marking; Polish finish
All package corners max. R 0.25
Figure 1
PG-DSO-12-9 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
V1.1, 2007-05-29
Data Sheet
14
Smart High-Side Power Switch
BTS5215L
Revision History
Version
Date
Changes
V1.1
2007-05-29
Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
Data Sheet
15
V1.1, 2007-05-29
Edition 2007-05-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 5/29/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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