BTS50025-1TEA [INFINEON]
It features Reverse ON functionality protecting the device in reverse polarity condition (reverse battery). The power transistor is built by an N-channel MOSFET with charge pump. It is specially designed to drive high current nominal loads up to 24 A, for application like heaters, glow plugs, fan and pump in the harsh automotive environment.;![BTS50025-1TEA](http://pdffile.icpdf.com/pdf2/p00361/img/icpdf/BTS50025-1TE_2209637_icpdf.jpg)
型号: | BTS50025-1TEA |
厂家: | ![]() |
描述: | It features Reverse ON functionality protecting the device in reverse polarity condition (reverse battery). The power transistor is built by an N-channel MOSFET with charge pump. It is specially designed to drive high current nominal loads up to 24 A, for application like heaters, glow plugs, fan and pump in the harsh automotive environment. 驱动 接口集成电路 |
文件: | 总44页 (文件大小:1309K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BTS50025-1TEA
Smart High-Side Power Switch
1
Overview
Features
•
•
•
•
•
•
•
•
•
•
One channel device
Low Stand-by current
Current controlled input
Reverse battery protection
Electrostatic discharge protection (ESD)
Optimized Electromagnetic Compatibility (EMC)
Compatible to cranking pulses (Severe cold start E11 in LV124)
Embedded diagnostic functions
Embedded protection functions
Green Product (RoHS compliant)
Applications
•
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Most suitable for application with high current loads, such heating system, fan and pump
PWM applications with low frequency
Product validation
Qualified for automotive applications. Product validation according to AEC-Q100.
Description
The BTS50025-1TEA is a 2.5mΩ single channel Smart High-Side Power Switch, embedded in a PG-TO-252-5-11
package, providing protective functions and diagnosis. It contains Infineon® ReverSave™ functionality. The
power transistor is built by an N-channel MOSFET with charge pump. It is specially designed to drive high
current loads up to 65A, for application like heaters, glow plugs, fan and pump in the harsh automotive
environment.
Data Sheet
www.infineon.com
1
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Overview
Table 1
Product Summary
Parameter
Symbol
VS(OP)
Values
5.8 V … 18 V
3.1 V ...27 V
5 mΩ
Operating Voltage
Extended supply voltage range
VS(EXT)
RDS(ON)
IL(NOM)
dkILIS
Maximum ON-State Resistance (Tj = 150 °C)
Nominal Load Current (TA = 85°C)
Typical current sense differential ratio
Minimum short circuit current threshold
Maximum reverse battery voltage
Maximum Stand-by Current at Tj = 25 °C
24 A
18000
65 A
ICL(0)
-VS(REV)
Ivs(off)
-16 V
4 µA
Embedded Diagnostic Functions
•
•
•
Proportional load current sense
Short circuit / Overtemperature detection
Latched status signal after short circuit or overtemperature detection
Embedded Protection Functions
•
•
•
•
•
Infineon® ReverSave™: Reverse battery protection by self turn ON of power MOSFET
Short circuit protection with latch
Overtemperature protection with latch
Enhanced short circuit operation
Infineon® SMART CLAMPING
Type
Package
Marking
BTS50025-1TEA
PG-TO-252-5-11
S50025A
Data Sheet
2
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1
3.2
3.3
Pin Assignment 8
Pin Definitions and Functions 8
Voltage and Current Definition 9
4
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
4.2
4.3
Absolute Maximum Ratings 10
Functional Range 13
Thermal Resistance 14
5
5.1
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Power Stage 15
5.1.1
5.1.2
5.1.3
5.1.3.1
5.1.3.2
5.1.4
5.1.5
5.2
Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching Resistive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching Inductive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PWM Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Advanced switch-off behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input Pins 19
5.2.1
5.3
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Protection Functions 19
5.3.1
5.3.1.1
5.3.1.2
5.3.1.3
5.3.2
5.4
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Activation of the Switch into Short Circuit (Short Circuit Type 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Short Circuit Appearance when the Device is already ON (Short Circuit Type 2) . . . . . . . . . . . . 20
Over-power shutdown (PSD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Diagnostic Functions 22
5.4.1
5.4.2
5.4.3
5.4.3.1
5.4.3.2
5.4.3.3
5.4.3.4
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SENSE Signal in Different Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SENSE Signal Variation and Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE Signal in Case of Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE Signal in Case of Over Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
3
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
6
Electrical Characteristics BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.1
6.2
Electrical Characteristics Table 29
Typical Performance Characteristics 35
7
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
7.1
Further Application Information 41
8
9
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Data Sheet
4
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
List of Tables
Table 1
Table 2
Table 3
Table 4
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-1 Sense Signal, Function of Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 6-1 Electrical Characteristics: BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 7-1 Bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Data Sheet
5
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
List of Figures
Figure 2-1 Block Diagram for the BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2-2 Internal diode diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3-1 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 3-2 Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 1
Figure 2
Figure 3
Maximum Energy Dissipation for Inductive Switch OFF, EAS/AR vs. IL at VS = 13.5 V . . . . . . . . . . . . 12
Maximum Energy Dissipation Repetitive Pulse temperature derating. . . . . . . . . . . . . . . . . . . . . . . 12
Typical Transient Thermal Impedance Zth(JA) = f(time) for Different PCB Conditions . . . . . . . . . . 14
Figure 5-1 Switching a Resistive Load: Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 5-2 Output Clamp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-3 Switching an Inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Switching in PWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-5 Input Pin Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-6 Diagram of Diagnosis & Protection Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-7 Over Power Shutdown behavior at low voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-8 Behavior of the BTS50025-1TEA during PWM operation above FIN max . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-9 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-10 Diagnostic Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-11 Current Sense for Nominal and Overload Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-12 IIL0 and IISO definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-13 Improved Current Sense Accuracy after 2-Point Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 5-14 Fault Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-1 Application Diagram with BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 8-1 PG-TO-252-5-11 (RoHS-Compliant) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Data Sheet
6
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Block Diagram
2
Block Diagram
VS
voltage sensor
over
temperature
Smart clamp
gate control
&
charge
pump
driver
logic
over current
switch OFF
IN
ESD
protection
OUT
load current sense
IS
Figure 2-1 Block Diagram for the BTS50025-1TEA
VCC
2mA
75V
75V
35V
OUT
IFB
IN
Figure 2-2 Internal diode diagram
Data Sheet
7
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
3
1 2
4 5
Figure 3-1 Pin Configuration
3.2
Pin Definitions and Functions
Pin
1
Symbol Function
OUT
IN
OUTput; Protected high side power output channel1)
INput; Digital signal to switch ON channel with Bipolar or Mosfet (active “low”)
Supply Voltage; Battery voltage
2
3, Cooling tab VS
4
5
IS
Sense; Analog/Digital signal for diagnosis, if not used: left open
OUTput; Protected high side power output channel1)
OUT
1) All output pins are internally connected and they also have to be connected together on the PCB. Not shorting all
outputs on PCB will considerably increase the ON-state resistance and decrease the current sense / overcurrent
tripping accuracy. PCB traces have to be designed to withstand the maximum current.
Exact path resistance matching on both outputs to common point is needed also for short circuit robustness and
reliability at high current.
Data Sheet
8
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Pin Configuration
3.3
Voltage and Current Definition
Figure 3-2 shows all terms used in this data sheet, with associated convention for positive values.
I VS
VS
VS
I IN
IN
V DS
IOUT
OUT
VIN
VOUT
IIS
V IS
IS
Figure 3-2 Voltage and Current Definition
Data Sheet
9
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings1)
Tj = -40°C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Supply Voltages
Supply Voltage
VS
-0.3
0
–
–
35
18
V
V
–
2)
P_4.1.1
P_4.1.2
Reverse Polarity Voltage
-VS(REV)
V =0 V
in
TA = 25°C
RL ≥ 0.68 Ω
t < 5 min.
Load Dump Voltage
VS(LD)
–
–
45
V
Suppressed
Load Dump acc.
to ISO16750-2
RI = 2 Ω
P_4.1.3
td=200ms
Us=100V
RL = 0.68 Ω
RIS = 1 kΩ
V
S(LD) = US*
Short Circuit Capability
Supply Voltage for Short Circuit VS(SC)
Protection
3.1
–
27
V
In accordance to P_4.1.4
AEC Q100-012,
Figure-1 Test
Circuit.
Input Pin
Voltage at IN pin
Vs - Vin
IIN
-16
-50
–
–
–
–
–
75
V
–
–
P_4.1.6
Current through IN pin
Maximum Input Frequency
50
mA
Hz
Hz
P_4.1.20
Fin
200
200
5.8V<VS - VIN<27V P_4.1.7
– P_4.1.8
Maximum Retry Cycle Rate in
Fault Condition
Ffault
–
Data Sheet
10
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
General Product Characteristics
Table 2
Absolute Maximum Ratings1) (cont’d)
Tj = -40°C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Sense Pin
Voltage at IS pin
Current through IS Pin
Power Stage
Vs - Vis
-0.3
-50
–
–
75
50
V
–
P_4.1.9
IIS
mA
–
P_4.1.10
Maximum Energy Dissipation by EAS
Switching Off Inductive Load
Single Pulse over Lifetime
–
–
–
–
–
–
–
600
130
80
mJ
mJ
mJ
V
VS = 13.5 V
IL = 19 A
TJ(0) ≤ 150°C
See Figure 1
3)VS = 13.5 V
IL = 19A
P_4.1.11
P_4.1.12
P_4.1.13
P_4.1.14
Maximum Energy Dissipation
Repetitive Pulse
EAR
TJ(0) ≤ 105°C
See Figure 1
3)VS = 13.5 V
IL =40 A
Maximum Energy Dissipation
Repetitive Pulse
EAR
TJ(0) ≤ 105°C
See Figure 1
Voltage at OUT Pin
Temperatures
VS - VOUT -0.3
35
–
Junction Temperature
TJ
-40
–
–
–
150
60
°C
K
–
–
P_4.1.15
P_4.1.16
Dynamic Temperature Increase ∆TJ
while Switching
Storage Temperature
ESD Susceptibility
TSTG
-55
–
150
°C
–
P_4.1.17
ESD Susceptibility (all Pins)
VESD(HBM) -2
–
–
–
–
2
kV
kV
V
HBM4)
HBM4)
CDM5)
CDM5)
P_4.1.18
P_4.1.19
P_4.1.21
P_4.1.22
ESD Susceptibility OUT Pin vs. VS VESD(HBM) -4
ESD Susceptibility (all Pins) VESD(CDM) -500
ESD Susceptibility (corner Pins) VESD(CD -750
4
500
750
V
1) Not subject to production test, specified by design.
2) The device is mounted on a FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection.
3) Setup with repetitive EAR and superimposed TC conditions (like AEC-Q100-PTC, ≤ 106 pulses with E ≤ EAR, ≤103 passive
temperature cycles), parameter drift within datasheet limits possible
4) ESD susceptibility, Human Body Model “HBM” according to AEC Q100-002.
5) ESD susceptibility, Charged Device Model “CDM” according to AEC Q100-011.
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
11
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
General Product Characteristics
2.0
1.5
1.0
0.5
0.0
Eas - TJ(0)<150°C
Ear - TJ(0)<105°C
0
10
20
IL(0) [A]
30
40
50
60
Figure 1
Maximum Energy Dissipation for Inductive Switch OFF, EAS/AR vs. IL at VS = 13.5 V
100%
80%
60%
40%
20%
0%
100
110
120
130
140
150
Tj(0) [°C]
Figure 2
Maximum Energy Dissipation Repetitive Pulse temperature derating
Data Sheet
12
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range
Parameter
Symbol
VS(NOM)
VS(EXT)
Values
Typ.
–
Unit Note or
Test Condition
Number
Min.
Max.
Supply Voltage Range for
Nominal Operation
5.8
18
V
–
P_4.2.1
P_4.2.2
Supply Voltage Range for
Extended Operation
3.1
–
27
V
1)Parameter
deviation possible
1) Protection functions still operative
Note:
Within the functional or operating range, the IC operates as described in the circuit description. The
electrical characteristics are specified within the conditions given in the Electrical Characteristics
table.
Data Sheet
13
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
General Product Characteristics
4.3
Thermal Resistance
Note:
This thermal data was generated in accordance with JEDEC JESD51 standards. For more
information, go to www.jedec.org.
Table 4
Thermal Resistance
Parameter
Symbol
Values
Typ.
–
Unit Note or
Test Condition
Number
Min.
Max.
0.8
–
1)
Junction to Case
RthJC
–
–
–
K/W
K/W
K/W
P_4.3.1
P_4.3.2
P_4.3.3
1)2)
1)3)
Junction to Ambient
Junction to Ambient
RthJA(2s2p)
RthJA(1s0p/600
mm2)
22
35
–
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 µm Cu, 2 × 35 µm
Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. TA = 25°C.
Device is dissipating 2 W power.
3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; the Product
(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with only one top copper layer 1 × 70 µm. TA = 25°C.
Device is dissipating 2 W power.
Figure 3 is showing the typical thermal impedance of BTS50025-1TEA mounted according to JEDEC JESD51-
2,-5,-7 at natural convection on FR4 1s0p and 2s2p boards.
100
JEDEC 1s0p / 600mm²
JEDEC 1s0p / 300mm²
JEDEC 1s0p / footprint
10
JEDEC 2s2p
1
0.1
0.01
0.0001
0.001
0.01
0.1
time [sec]
1
10
100
1000
Figure 3
Typical Transient Thermal Impedance Zth(JA) = f(time) for Different PCB Conditions
Data Sheet
14
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
5
Functional Description
5.1
Power Stage
The power stage is built by a N-channel power MOSFET (DMOS) with a charge pump.
5.1.1
Output ON-State Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Page 35
shows the dependencies in terms of temperature and supply voltage, for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 5.2.1.
A LOW signal (see Chapter 5.1.2) at the input pin causes the power DMOS to switch ON with a dedicated slope,
which is optimized in terms of EMC emission.
5.1.2
Switching Resistive Loads
Figure 5-1 shows the typical timing when switching a resistive load. The power stage has a defined switching
behavior. Defined slew rates results in lowest EMC emission at minimum switching losses.
VOUT
VOUT
80%VS
50
V
%
S
dVOFF/dt
dVON/dt
V
IN
25%VS
V
S
20%
tOFF( DELAY)
t F
V
IN
tON DELAY)
t R
(
Figure 5-1 Switching a Resistive Load: Timing
5.1.3
Switching Inductive Loads
5.1.3.1 Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device due
to high voltages, there is a Infineon® SMART CLAMPING mechanism implemented that keeps negative output
voltage to a certain level (VS - VDS(CL)). Please refer to Figure 5-2 and Figure 5-3 for details. Nevertheless, the
maximum allowed load inductance remains limited.
Data Sheet
15
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
VS
VIN
Smart
Clamp
VDS
IN
LOGIC
IL
VS
OUT
VOUT
L, RL
Figure 5-2 Output Clamp
V
IN
t
t
VOUT
VS
Gnd
VS - VDS(Fast off)
VS-VDS(CL)
IOUT
t
t
T
j
TJ0
Figure 5-3 Switching an Inductance
The BTS50025-1TEA provides Infineon® SMART CLAMPING functionality. To increase the energy capability, the
clamp voltage VDS(CL) increases with junction temperature TJ and with load current IL. Refer to Page 37.
Data Sheet
16
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
5.1.3.2 Maximum Load Inductance
During demagnetization of inductive loads, energy must be dissipated in the BTS50025-1TEA. This energy can
be calculated with following equation:
L
RL
VS − VDS(CL)
RL × IL
E = VDS(CL)
×
×
[
× ln
(
1 −
) + IL]
RL
VS − VDS(CL)
(5.1)
Following equation simplifies under the assumption of RL = 0 Ω.
1
VS
E = × L × IL2 ×
2
(
1 −
)
VS − VDS(CL)
(5.2)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 1 for
the maximum allowed energy dissipation as function of the load current.
Data Sheet
17
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
5.1.4
PWM Switching
The switching losses during this operation should be properly considered (see following equation):
PTOTAL = (switching_ON_energy + switching_OFF_energy + IL2 × RDS(ON) × tDC) / period
In the event of a fault condition it has to be ensured, that the PWM frequency will not exceed a maximum retry
frequency of fFAULT (parameter P_4.1.9). With this measure the short circuit robustness nRSC1 (parameter
P_4.1.4) can be utilized. Operation at nominal PWM frequency can only be restored, once the fault condition
is overcome.
VS -V IN
VIN_H
VIN_L
t
P
PTOT
t
tDC
Figure 5-4 Switching in PWM
5.1.5
Advanced switch-off behavior
In order to reduce device stress when switching OFF Inductive and critical loads, the device provides an
advanced switch off functionality which results in a faster switch off behavior. This fast switch off functionality
is triggered by one the following conditions:
•
The device is commanded off by applying VIN(L) at the IN pin. During the switch OFF operation the OUT pins’
voltage in respect to VS pin drops below Vds(fast off). See Figure 5-3.
•
The device is commanded on or is already in on-state. The device then detects a short circuit condition
(IL ≥ ICL(0)) and initiates a protective switch off. Please refer to Chapter 5.3.1.1 and Chapter 5.3.1.2 for
details.
•
The device is commanded on or is already in on-state. The device then detects an over-temperature
condition.
Data Sheet
18
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
5.2
Input Pins
5.2.1
Input Circuitry
The input circuitry is referenced to VS. To turn on the device VS - VIN must be higher than VIN(H) and lower than
VIN(L) to turn off the device. The most common way is to use a bipolar transistor to connect the input pin to the
ground. When the device is latched in protection mode VS - VIN must be lower than VIN(L) and Iin lower than IIN(L)
in order to reset the latch. The device provides Infineon® ReverSave™ functionality which turns on the power
mosfet in reverse polarity. This functionality required to have a diode in parallel of the bipolar transistor.
Figure 5-5 shows the electrical equivalent input circuitry.
VS
2mA
75V
IN
RIN
Figure 5-5 Input Pin Circuitry
5.3
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent
the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as
“outside” normal operating range. Protection functions are designed neither for continuous nor for repetitive
operation.
Figure 5-6 describes the typical functionality of the diagnosis and protection block.
Data Sheet
19
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
VS
VDS
Vb,IS
VS
ESD
protection
IN
current
sense
Driver
IIS(fault)
Over-
current
IL
IS
1
0
(IL/dkILIS
)
IIS0
OUT
VIS
tIN(RESET
DELAY)
IIS
&
R
S
Q
RIS
IL>ICL
1
&
FAULT
Q
TJ >TJ(TRIP)
driver logic Power Shutdown (PSD)
GND
Figure 5-6 Diagram of Diagnosis & Protection Block
5.3.1
Overload Protection
In case of overload, high inrush current or short circuit to ground, the BTS50025-1TEA offers several protection
mechanisms. Any protective switch OFF latches the output. To restart the device, it is necessary to set Vs - Vin
< Vin(l) and Iin lower than IIN(L) for t > tIN(RESETDELAY). This is a latch behavior. Figure 5-9 gives a sketch of the
situation.
5.3.1.1 Activation of the Switch into Short Circuit (Short Circuit Type 1)
When the switch is activated into short circuit, the current will raise. When the output current reaches ICL(0)
value, the device is latched and will turn off after tOFF(TRIP) regardless the output current value. For overload
(short circuit or overtemperature), the maximum retry cycle (ffault) under fault condition must be considered.
5.3.1.2 Short Circuit Appearance when the Device is already ON (Short Circuit Type 2)
When the device is in ON state and a short circuit to ground appears at the output (SC2) with an overcurrent
higher than ICL(0), the device automatically turns OFF and latches the device.
5.3.1.3 Over-power shutdown (PSD)
The BTS50025-1TEA integrates an over-power shutdown protection in order to limit the power dissipation.
This protection intends to limit the maximum junction temperaturee in case of soft short circuit(IL < ICL(0)),
repetitive short circuit or short circuit at low voltage.
In case of a short circuit at low voltage with high resistor or inductor in the battery line, Vs can drop below VVS-
VIN(PSD) and the load current will not reach the ICL(0) . In such condition the over-power shutdown protection will
be activated and will latch the device after tPSD(UV)
.
Data Sheet
20
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
VIN
VS
t
VVS-VIN(PSD
)
VINL
ICL(0)
IOUT
VDS
VDS(PSD)
tPSD(UV)
Figure 5-7 Over Power Shutdown behavior at low voltage
It also limits the maximum PWM frequency below FIN. See Figure 5-8
Input frequency < Fin max
Input frequency < Fin max
Input frequency > Fin max
Vin-Gnd
t
t
Vout-Gnd
Vifb
t
Missing pulses – Part is latched
Normal operation
Normal operation
Figure 5-8 Behavior of the BTS50025-1TEA during PWM operation above FIN max
5.3.2
Temperature Limitation in the Power DMOS
The BTS50025-1TEA incorporates a temperature sensor. Triggering the over-temperature (TJ(TRIP)) will switch
OFF the Power Mosfet to prevent destruction and latches the device.
Data Sheet
21
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
tIN (RESETDELAY)
IN
IL
t
t
tOFF( TRIP)
tOFF( TRIP)
ICL(1)
ICL(0)
T
J
TJ( TRIP)
TA
t
t
IIS
IIS(
FAULT)
0
Figure 5-9 Overload Protection
The current sense exact signal timing can be found in the Chapter 5.4.3.2. It is represented here only for
device’s behavior understanding.
5.4
Diagnostic Functions
For diagnosis purposes, the BTS50025-1TEA provides a combination of digital and analog signal at pin IS.
5.4.1
IS Pin
The BTS50025-1TEA provides an enhanced current sense signal called IIS at pin IS. As long as no “hard” failure
mode occurs (short circuit to GND / overcurrent / overtemperature) and the condition VIS ≤ VOUT - 3.5 V is
fulfilled, a proportional signal to the load current is provided. The complete IS pin and diagnostic mechanism
is described in Figure 5-10. The accuracy of the sense current depends on temperature and load current. In
case of failure, a fixed IIS(FAULT) is provided. In order to get the fault current in the specified range, the condition
VS - VIS ≥ 3.5 V must be fulfilled.
Data Sheet
22
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
VS
IIS( FAULT)
(IL /dk ILIS ) IIS(0)
Z
IS(AZ)
FAULT
1
0
IS
Figure 5-10 Diagnostic Block Diagram
5.4.2
SENSE Signal in Different Operation Modes
Table 5-1 Sense Signal, Function of Operation Mode1)
Operation mode
Input Level
Output Level VOUT Diagnostic Output (IS)2)
Normal operation
Short circuit to GND
Overtemperature
Short circuit to VS
Open Load
HIGH (OFF)
GND
GND
GND
VS
IIS(OFF)
IIS(OFF)
IIS(OFF)
IIS(OFF)
Z
IIS(OFF)
Normal operation
Short circuit to GND
Overtemperature (after the event)
Short circuit to VS
LOW (ON)
~ VS
GND
GND
VS
IIS = (IL / dkILIS) ± IIS0
IIS(FAULT)
IIS(FAULT)
IIS < IL / dkILIS ± IIS0
IIS0
Open Load
VS
1) Z = High Impedance
2) See Chapter 5.4.3 for Current Sense Range and Improved Current Sense Accuracy.
5.4.3
SENSE Signal in the Nominal Current Range
Figure 5-11 and Figure 5-13 show the current sense as function of the load current in the power DMOS.
Usually, a pull-down resistor RIS is connected to the current sense pin IS. A typical value is 1 kΩ. The dotted
curve represents the typical sense current, assuming a typical dkILIS factor value. The range between the two
solid curves shows the sense accuracy range that the device is able to provide, at a defined current.
IL
dkILIS
IIS
=
+ IIS0 with (IIS ≥ 0)
(5.3)
Data Sheet
23
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
where the definition of dkILIS is:
IL3
-
-
IL1
IIS1
dkILIS
=
IIS3
(5.4)
(5.5)
(5.6)
the definition of IIS0 is:
IL1
dkILIS
IIS0 = IIS1
−
and the definition of IL0 is:
IIL0 = IIL1 IS1 × dkILIS
5
4.5
4
dKILIS min.
dKILIS typ.
dKILIS max.
3.5
3
2.5
2
1.5
1
0.5
0
0
20
40
60
80
IL[A]
Figure 5-11 Current Sense for Nominal and Overload Condition
Data Sheet
24
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
0.02
0.015
0.01
dkILIS(min)
dkILIS(typ)
IIS0(max)
dkILIS(max)
0.005
0
IIL0(min)
IIL0(max)
-0.005
-0.01
-0.015
-0.02
IIS0(min)
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
IL[A]
Figure 5-12 IIL0 and IISO definition
5.4.3.1 SENSE Signal Variation and Calibration
In some applications, an enhanced accuracy is required around the device nominal current range IL(NOM). To
achieve this accuracy requirement, a calibration on the application is possible. After two point calibration, the
BTS50025-1TEA will have a limited IIS value spread at different load currents and temperature conditions. The
IIS variation can be described with the parameters ∆(dkILIS(cal)) and the ∆IIS0(cal). The blue solid line in
Figure 5-13 is the current sense ratio after the two point calibration at a given temperature. The slope of this
line is defined as follows:
IIS(cal)2 − IIS(cal)1
1
=
dkILIS(cal) IL(cal)2 − IL(cal)1
(5.7)
The offset is defined as follows:
IL(cal)1
dkILIS(cal)
IL(cal)2
dkILIS(cal)
IIS0(cal) = IIS(cal)1
−
= IIS(cal)2
−
(5.8)
The bluish area in Figure 5-13 is the range where the current sense ratio can vary across temperature and load
current after performing the calibration. The accuracy of the load current sensing is improved and, given a
sense current value IIS (measured in the application), the load current can be calculated as follow, using the
absolute value for ∆(dkILIS(cal)) instead of % values:
IL = dkILIS(cal)
×
(1 + ∆(dkILIS(cal)
)
)
×
(
IIS − IIS0(cal) − ∆IIS0(cal)
)
(5.9)
Data Sheet
25
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
where dkILIS(cal) is the current sense ratio measured after two-points calibration (defined in Equation (5.7)),
IIS0(cal) is the current sense offset (calculated after two points calibration, see Equation (5.8)), and ∆IIS0(cal) is
the additional variation of the individual offset over life time and temperature. For a calibration at 25°C ∆IIS0(cal)
varies over temperature and life time for all positive ∆IIS0(cal) within the differences of the temperature
dependent Max. limits. All negative ∆IIS0(cal) vary within the differences of the temperature dependent Min.
limits.
For positive IIS0(cal) values (IIS0(cal) > 0):
Max IIS0 (@TJ = 150°C) Max IIS0 (@TJ = 25°C) ≤ ∆IIS0(cal) ≤ Max IIS0 (@TJ = -40°C) Max IIS0 (@TJ = 25°C)
(5.10)
For negative IIS0(cal) values (IIS0(cal) < 0):
Min IIS0 (@TJ = 150°C) Min IIS0 (@TJ = 25°C) ≥ ∆IIS0(cal) ≥ Min IIS0 (@TJ = -40°C) Min IIS0 (@TJ = 25°C)
(5.11)
Equation (5.9) actually provides four solutions for load current, considering that ∆(dkILIS(cal)) and ∆IIS0(cal) can
be both positive and negative. The load current IL for any sense current IIS will spread between a minimum IL
value resulting from the combination of lowest ∆(dkILIS(cal)) value and highest ∆IIS0(cal) and a maximum IL value
resulting from the combination of highest ∆(dkILIS(cal)) value and lowest ∆IIS0(cal)
.
IIS
1/dkILIS(min)
ΔdkILIS(cal)
1/dkILIS(cal)
ΔdkILIS(cal)
1/dkILIS(max)
IIS(cal)2
IIS
IIS(cal)1
ΔIIS0(cal)
IIS0(cal)
Max IL
Min IL Typ IL
IL
IL(cal)1
IL(cal)2
ΔIIS0(cal)
Figure 5-13 Improved Current Sense Accuracy after 2-Point Calibration
Data Sheet
26
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
5.4.3.2 SENSE Signal Timing
Figure 5-14 shows the timing during settling and disabling of the sense.
tOFF<tIN( RESETDELAY)
V
IN
tOFF>t
IN( RESETDELAY)
Short/
t
t
Overtemp./
PSD
VOUT
IIS
IS(fault)t
I
IIS
t
latch
no
reset
reset
V
IN
V
IN
t
t
t
Short
circuit
t
tON
IL
80 % of
IL static
t
VOUT
VOUT
tsIS(ON)
tsIS(ON)_90
t
IIS
90 % of
IS static
IIS
IIS( fault)
IIS
tsIS(LC)
t
t
tpIS( FAULT)
Figure 5-14 Fault Acknowledgement
5.4.3.3 SENSE Signal in Case of Short Circuit to VS
In case of a short circuit between OUT and VS, a major part of the load current will flow through the short
circuit. As a result, a lower current compared to the nominal operation will flow through the DMOS of the
BTS50025-1TEA, which can be recognized at the current sense signal.
5.4.3.4 SENSE Signal in Case of Over Load
An over load condition is defined by a current flowing out of the DMOS reaching the current over load ICL or the
junction temperature reaches the thermal shutdown temperature TJ(TRIP). Please refer to Chapter 5.3.1 for
details. In that case, the SENSE signal will be IIS(FAULT) when the IN pin stays LOW.
Data Sheet
27
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Functional Description
This is a device with latch functionality. The state of the device will remain and the sense signal will remain on
IIS(FAULT) until a reset signal comes from the IN pin. For example, when a thermal shutdown occurs, even when
the over temperature condition has disappeared, the DMOS can only be reactivated when a reset signal is sent
to the IN pin.
Data Sheet
28
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
6
Electrical Characteristics BTS50025-1TEA
6.1
Electrical Characteristics Table
Table 6-1 Electrical Characteristics: BTS50025-1TEA
VS =5.8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Operating and Standby Currents
Standby Current for Whole IVS(OFF)
Device with Load
–
1
4
µA
µA
1)VS = 18 V
VOUT = 0 V
Vin = Vs
TJ ≤ 85°C
See Page 35
P_6.1.1
Maximum Standby Current IVS(OFF)
for Whole Device with Load
–
–
10
100
VS = 18 V
VOUT = 0 V
Vin = Vs
TJ ≤ 150°C
See Παγε 35
P_6.1.2
P_6.1.3
Power Stage
ON-State Resistance in
Forward Condition
RDS(ON)
4.4
5
mΩ
IL = 20 A
Vs - Vin ≥ 5.8 V
TJ = 150°C
See Παγε 35
ON-State Resistance in
Forward Condition
RDS(ON)
RDS(ON)
RDS(ON)
–
–
–
2.7
6
–
mΩ
mΩ
mΩ
1)IL = 20 A
Vs - Vin ≥ 5.8 V
TJ = 25°C
P_6.1.4
P_6.1.5
P_6.1.6
ON-State Resistance in
Forward Condition, Low
Battery Voltage
20
–
IL = 12 A
Vs - Vin ≥ 3.1 V
TJ = 150°C
1)IL = 12 A
Vs - Vin ≥ 3.1 V
TJ = 25°C
ON-State Resistance in
Forward Condition, Low
Battery Voltage
3.5
Nominal Load Current
IL(NOM)
VDS(CL)
24
30
26
35
–
A
V
2)TA = 85°C
TJ ≤ 150°C
P_6.1.7
P_6.1.8
Drain to Source Smart
Clamp Voltage VDS(CL) = VS -
VOUT
45
IDS = 10 mA
TJ = 25°C
See Page 37
Drain to Source Smart
Clamp Voltage VDS(CL) = VS -
VOUT
VDS(CL)
35
–
39
50
–
V
V
IDS = 10 mA
TJ = 150°C
See Page 37
1)See Page 16
P_6.1.9
Fast turn off detection
voltage
VDS(FAST)
28
P_6.1.10
Data Sheet
29
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)
VS =5.8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
0.6
Unit Note or
Test Condition
Number
Min.
Max.
Body diode Forward voltage VF
–
0.8
V
IOUT = -20A
P_6.1.11
P_6.1.12
TJ = 150°C
Output Leakage Current
Output Leakage Current
IL(OFF)
–
–
1
4
µA
1)VS = 18 V
VOUT = 0 V
Vin = Vs
TJ ≤ 85°C
( 10ms after
VS = VIN
)
IL(OFF)
10
100
µA
VS = 18 V
VOUT = 0 V
Vin = Vs
P_6.1.13
TJ ≤ 150°C
( 10ms after
VS = VIN
)
Turn ON Slew Rate
VOUT = 25% to 50% VS
dVON/dt
-dVOFF/dt
tr
0.05
0.05
10
0.25
0.25
50
1
V/µs RL = 0.68 Ω
VS = 13.5 V
P_6.1.14
P_6.1.15
P_6.1.16
P_6.1.17
P_6.1.18
P_6.1.19
P_6.1.20
See Figure 5-1
See Page 36
Turn OFF Slew Rate
VOUT = 50% to 25% VS
1
V/µs
Rising time during turn on
VOUT from 20% to 80% of VS
150
150
250
450
–
µs
Falling time during turn off tf
VOUT from 80% to 20% of VS
10
50
µs
Turn ON Time to
VOUT = 20% of VS
tON(DELAY)
tOFF(DELAY)
EON
10
50
µs
Turn OFF Time to
VOUT = 80% of VS
50
150
5.5
µs
Switch ON Energy
–
mJ
1)RL = 0.68 Ω
VS = 13.5 V
See Page 37
Switch OFF Energy
EOFF
–
4
–
mJ
1)RL = 0.68 Ω
VS = 13.5 V
P_6.1.21
See Page 37
Data Sheet
30
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)
VS =5.8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Input Pin
LOW Level Input Voltage
HIGH Level Input Voltage
Input Voltage Hysteresis
On stage Input Current
VVS-VIN(L)
VVS-VIN(H)
VVS-VIN(HYS)
IIN(ON)
2.3
4
2.7
4.8
2.1
2
3.1
5.8
2.5
4
V
P_6.1.22
P_6.1.23
P_6.1.24
P_6.1.25
V
1.7
1
V
mA
VS - VIN = 18 V,
VS = 18V
LOW Level Input Current
Input resistor
IIN(L)
Rin
100
115
–
–
µA
VIN = Vin(L)
P_6.1.26
P_6.1.27
200
300
Ω
Built-in
Protection: Reverse Polarity
ON-State Resistance in
Reverse Polarity
RDS(REV)
–
5
4
10
–
mΩ
mΩ
VS = 0 V
VS - VIN = -16 V
IL = -20 A
TJ = 150°C
1)VS = 0 V
P_6.1.28
ON-State Resistance in
Reverse Polarity
RDS(REV)
–
P_6.1.29
VS - VIN = -16 V
IL = -20 A
TJ = 25°C
See Page 37
Protection: Overload
Current Trip Detection Level ICL(0)
65
82
100
A
5.8V < VS - VIN<
27V
P_6.1.30
See Figure 5-9
Current Trip Detection Level ICL(0_UV)
at low voltage
12
65
–
82
120
140
–
A
VS = 3.1V
P_6.1.32
P_6.1.33
Current Trip Maximum Level ICL(1)
92
A
dIL/dt = 1 A/µs
See Figure 5-9
1)See Figure 5-9 P_6.1.34
Overload Shutdown Delay
Time
tOFF(TRIP)
TJ(TRIP)
7
µs
°C
Thermal Shutdown
Temperature
150
1751)
2001)
See Figure 5-9
3.1V < VS - VIN<
27V
P_6.1.35
Over Power Shutdown
Detection Level
VDS(PSD)
650
3.8
10
900
4.3
50
1100
5
mV
V
1)See Figure 5-7 P_6.1.36
Over Power Shutdown
Activation Level
VVS-VIN(PSD)
1)See Figure 5-7 P_6.1.37
Over Power Shutdown Time tPSD(UV)
300
µs
See Figure 5-7
P_6.1.38
Data Sheet
31
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)
VS =5.8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Diagnostic Function: Sense Pin
Sense Signal Current in Fault IIS(FAULT)
Condition
5
12
18
mA
mA
VS - VIS ≥ 3.5 V
Typ. and Max.
value: VS -
VIS ≥ 8 V
1)VS - VIS ≥ 3.5 V P_6.1.40
P_6.1.39
Sense Signal Saturation
Current
IIS(LIM)
4.4
6.5
–
Data Sheet
32
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)
VS =5.8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Diagnostic Function: Current Sense Ratio Signal in the Nominal Area, Stable Current Load Condition
Current Sense Differential
Ratio
dkILIS
15500 18000 20500
–
IL3 = 60 A
P_6.1.41
IL1 = 0.2 A
VS - VIS ≥ 3.5 V
See
Equation (5.4)
Calculated Sense Offset load IL0
Current
IS = 0 A, Tj=-40°C
-0.15
-0.13
-0.105
-7
0
0
0
0
0
0
0.15
0.13
0.105
9.7
A
3)VS - VIS ≥ 3.5 V P_6.1.42
See Figure 5-11
Calculated Sense Offset load IL0
Current
IS = 0 A, Tj=25°C
A
3)VS - VIS ≥ 3.5 V P_6.1.60
See Figure 5-11
Calculated Sense Offset load IL0
Current
IS = 0 A, Tj=150°C
A
3)VS - VIS ≥ 3.5 V P_6.1.61
See Figure 5-11
Calculated Sense Offset
Current
IL = IL0 = 0 A, Tj=-40°C
IIS0
IIS0
IIS0
µA
µA
µA
3)VS - VIS ≥ 3.5 V P_6.1.43
Tj=-40°C
See Figure 5-11
3)VS - VIS ≥ 3.5 V P_6.1.58
Tj=25°C
See Figure 5-11
Calculated Sense Offset
Current
IL = IL0 = 0 A, Tj=25°C
-5.95
-4.9
8.25
6.8
Calculated Sense Offset
Current
3)VS - VIS ≥ 3.5 V P_6.1.59
Tj=150°C
IL = IL0 = 0 A, Tj=150°C
See Figure 5-11
Sense Current
IL = IL1 = 0.2 A
IIS1
IIS2
IIS3
2.3
10.8
1.08
3.24
0
22.6
1.3
µA
mA
mA
%
VS - VIS ≥ 3.5 V
See Figure 5-11
P_6.1.44
P_6.1.45
P_6.1.46
P_6.1.47
Sense Current
IL = IL2 = 20 A
0.92
2.78
VS - VIS ≥ 3.5 V
See Figure 5-11
Sense Current
IL = IL3 = 60 A
3.88
+1.5
VS - VIS ≥ 3.5 V
See Figure 5-11
1)(dkILIS(cal)(40°C)
dkILIS(cal)(25°C))/
dkILIS(cal)(25°C)
Current Sense Ratio Spread ∆(dkILIS(cal)(- -1.5
between -40°C and 25°C for
Repetitive Operation
-
)
40°C)
See Figure 5-13
Current Sense Ratio Spread ∆(dkILIS(cal)(150 -3.5
-0.8
+2
%
1)(dkILIS(cal)(150°C)
dkILIS(cal)(25°C))/
dkILIS(cal)(25°C)
-
P_6.1.48
between 150°C and 25°C for
Repetitive Operation
)
°C)
See Figure 5-13
Data Sheet
33
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)
VS =5.8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Diagnostic Function: Diagnostic Timing in Normal Condition
Current Sense Settling Time tsIS(ON)_90
until 90% and 110% of IIS
Stable after turn on
–
–
–
–
–
–
–
5
700
1500
1
µs
µs
µA
µs
VS = 13.5 V
RL = 0.68 Ω
See Figure 5-14
P_6.1.49
P_6.1.50
P_6.1.51
P_6.1.52
Current Sense Settling Time tsIS(ON)
to IIS Stable after turn on
VS = 13.5 V
RL = 0.68 Ω
See Figure 5-14
IIS Leakage Current when IN IIS(OFF)
Disabled
VIN = VS
RIS = 1k Ω
TJ ≤ 150°C
1)IL ≥ 0.2 A
Current Sense Settling Time tsIS(LC)
–
after Load Change
Diagnostic Function: Diagnostic Timing in Overload Condition
Fault Propagation Time for tpIS(FAULT)
Short Circuit Detection
–
–
6
3
20
µs
µs
µs
See Figure 5-14 P_6.1.53
1)
Fault Propagation Time for tFAULT(OT)
Over temperature Detection
100
–
–
P_6.1.55
Delay Time to Reset Fault
tIN(RESETDELAY)
5000
See Figure 5-14 P_6.1.54
Pin after Turning OFF VIN
1) Not subject to production test, specified by design.
2) Value is calculated from the parameters typ. RthJA(2s2p), with 65 K temperature increase, typ. and max. RDS(ON)
.
3) Value is calculated from the parameters dkILIS and IIS1
.
Data Sheet
34
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
6.2
Typical Performance Characteristics
Standby Current for Whole Device with Load,
Standby Current for Whole Device with Load,
IVS(OFF) = f(VS, TJ), -40°C, 85°C, 150°C
IVS(OFF) = f(TJ) at VS = 13.5 V
10.0
30.0
Vs=13,5V
9.0
-40°C
25.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
85°C
20.0
150°C
15.0
10.0
5.0
0.0
0
5
10
15
20
25
30
-40 -20
0
20 40 60 80 100 120 140 160
VS [V]
Temperature [°C]
ON State Resistance
ON State Resistance
RDS(ON) = f(VS - VIN, TJ), IL = 10 A ... ICL(0) min; -40°C, RDS(ON) = f(TJ),VS - VIN= 13.5 V, IL = 10 A ... ICL(0) min
25°C, 150°C
10
9
8
7
6
5
4
3
2
1
0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40°C
25°C
150°C
3
8
13
18
23
28
-40 -20
0
20 40 60 80 100 120 140 160
VS - VIN [V]
Temperature [°C]
Data Sheet
35
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Turn ON Time
Turn OFF Time
tON = f(VS, TJ), RL = 0.68 Ω
tOFF = f(VS, TJ), RL = 0.68 Ω
100
300
250
200
150
100
50
-40°C
25°C
-40°C
150°C
25°C
75
150°C
50
25
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VS - VIN [V]
VS - VIN [V]
Slew Rate at Turn ON
Slew Rate at Turn OFF
dVON / dt = f(VS, TJ), RL = 0.68 Ω
dVOFF / dt = f(VS, TJ), RL = 0.68 Ω
0.6
0.6
-40°C
25°C
-40°C
25°C
0.5
0.5
0.4
0.3
0.2
0.1
0
150°C
150°C
0.4
0.3
0.2
0.1
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VS - VIN [V]
VS - VIN [V]
Data Sheet
36
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Switch ON Energy
Switch OFF Energy
EON = f(VS, TJ), RL = 0.68 Ω
EOFF = f(VS, TJ), RL = 0.68 Ω
30.0
30.0
-40°C
-40°C
25°C
25°C
25.0
25.0
150°C
150°C
20.0
20.0
15.0
10.0
5.0
15.0
10.0
5.0
0.0
0.0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VS - VIN [V]
VS - VIN [V]
Drain to Source Clamp Voltage
Resistance in ReverSave™
VDS(CL) = f(TJ), IL = 10 mA
RDS(REV) = f(VS, TJ), IL = -20 A
40.0
38.0
36.0
34.0
32.0
30.0
20.0
15.0
10.0
5.0
-40°C
25°C
150°C
0.0
-40 -20
0
20 40 60 80 100120140160
0
5
10
15
20
TJ [°C]
VS - VIN [V]
Data Sheet
37
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
Input Current
Time to Shutdown
IIN = f(VS, TJ)
tSHUTDOWN Vs IL , RthJA(2s2p)
4
100
10
1
-40°C
25°C
150°C
3
2
1
0
-40°C
25°C
150°C
0.1
0
5
10
15
20
25
30
0
10 20 30 40 50 60 70 80
VS - VIN [V]
IL [A]
VIS(FAULT) min. Vs VS; RIS = 500Ω, 1 kΩ, 2.2 kΩ
dKILIS Vs TJ
25
18500
18400
18300
18200
18100
18000
17900
17800
17700
17600
17500
Ris=500ohm
Ris=1kohm
Ris=2.2kohm
20
15
10
5
0
-40 -20
0
20 40 60 80 100120140160
0
5
10
15
20
25
30
TJ [°C]
VS [V]
Data Sheet
38
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Electrical Characteristics BTS50025-1TEA
ICL(0) = f(VS, TJ)
-40°C
150°C
25°C
112
102
92
82
72
62
52
42
32
22
12
0
5
10
15
20
25
30
VS - VIN [V]
Data Sheet
39
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Application Information
7
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.This is
a very simplified example of an application circuit. The function must be verified in the real application.
VBAT
R/L cable
CVS
VDD
VDD
A/D IN
VS
OUT
R
IS_PROT
IS
IN
R/ L cable
Micro controller
R
IS
CSENSE
R
IN
GPIO
VSS
D
Load
Figure 7-1 Application Diagram with BTS50025-1TEA
Data Sheet
40
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Application Information
Table 7-1 Bill of material
Reference
Value
Purpose
RIN
4.7 kΩ
Protection of the microcontroller during reverse polarity and during loss of
ground
RIS
1 kΩ
Sense resistor
RIS_PROT
10 kΩ
Protection of the microcontroller during fault condition
Protection of the BTS50025-1TEA and the microcontroller during reverse
polarity
CSENSE
CVS
10 nF
Sense signal filtering
100 nF
Improved EMC behavior (in layout, pls. place close to the pins)
To turn on the Power Mosfet during reverse polarity
D
7.1
Further Application Information
•
•
Please contact us for information regarding the pin FMEA
For further information you may contact http://www.infineon.com/
Data Sheet
41
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Package Information
8
Package Information
Figure 8-1 PG-TO-252-5-11 (RoHS-Compliant)1)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant
with government regulations the device is available as a green product. Green products are RoHS-Compliant
(i.e. Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
1) Dimensions in mm
Data Sheet
42
Rev.1.1
2019-09-30
BTS50025-1TEA
Smart High-Side Power Switch
Revision History
9
Revision History
Revision
Date
Changes
1.1
2019-09-30 Chapter “Electrical Characteristics”
•
•
•
Change P_6.1.30 and P_6.1.33 minimum limit from 60A to 65A
Change P_6.1.30 and P_6.1.32 typical value from 80A to 82A
Change P_6.1.33 typical value from 87A to 92A
1.0
2018-08-16 Datasheet created
Data Sheet
43
Rev.1.1
2019-09-30
Please read the Important Notice and Warnings at the end of this document
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™.
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2019-09-30
Published by
Infineon Technologies AG
81726 Munich, Germany
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
Infineon Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
© 2019 Infineon Technologies AG.
All Rights Reserved.
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