BTS432E2XK [INFINEON]
Buffer/Inverter Based Peripheral Driver, 44A, MOS, PZFM5, PLASTIC, TO-220AB, 5 PIN;
| 型号： | BTS432E2XK |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 44A, MOS, PZFM5, PLASTIC, TO-220AB, 5 PIN 局域网 驱动 接口集成电路 |
| 文件： | 总14页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS 432 E2
Smart Highside Power Switch
Product Summary
Features
1
•
•
•
•
•
•
•
•
•
•
•
•
)
V
80
58
4.5 ... 42
-32
V
V
V
Load dump
Load dump and reverse battery protection
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of V protection
V -VOUT Avalanche Clamp
bb
V
V
bb (operation)
V
bb (reverse)
R
ON
38
44
35
11
mΩ
I
I
I
A
A
A
L(SCp)
L(SCr)
L(ISO)
2)
bb
PG-TO220-5-11 PG-TO263-5-2
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
5
•
•
Green Product (RoHS compliant)
AEC qualified
5
1
Standard
SMD
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
•
•
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.
+ V
R
bb
bb
3
5
Voltage
source
Gate
Overvoltage
protection
Current
limit
protection
VLogic
OUT
Limit for
Charge pump
Level shifter
Voltage
sensor
unclamped
ind. loads
Temperature
sensor
Rectifier
IN
2
4
Open load
detection
Load
Logic
ESD
ST
Short circuit
detection
PROFET
GND
1
Load GND
Signal GND
1)
2)
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Data Sheet
1 of 14
2010-Jan-26
®
PROFET BTS 432 E2
Pin
1
Symbol
GND
IN
Function
Logic ground
2
Input, activates the power switch in case of logical high signal
3
V
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
Diagnostic feedback, low on failure
Output to the load
OUT
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Vs3)
Values
Unit
V
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
63
66.5
V
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
A
°C
125
W
Inductive load switch-off energy dissipation,
single pulse
T=150 °C: EAS
1.7
2.0
J
kV
j
Electrostatic discharge capability (ESD)
(Human Body Model)
VESD
Input voltage (DC)
VIN
IIN
IST
-0.5 ... +6
5.0
V
mA
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
5.0
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on pcb4):
≤ 1 K/W
≤ 75
typ. 33
3)
4)
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Data Sheet
2
2010-Jan-26
®
PROFET BTS 432 E2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
T=25 °C: RON
--
30
55
11
38
70
--
mΩ
A
j
T=150 °C:
j
Nominal load current (pin 3 to 5)
IL(ISO)
9
ISO Proposal: VON = 0.5 V, T = 85 °C
C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
IL(GNDhigh)
--
--
1
mA
T =-40...+150°C
j
Turn-on time
Turn-off time
to 90% VOUT: ton
to 10% VOUT: toff
50
10
160
--
300
80
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
dV /dton
-dV/dtoff
0.4
1
--
--
2.5 V/µs
5 V/µs
j
j
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Undervoltage restart
Undervoltage restart of charge pump
see diagram page 12
T =-40...+150°C: Vbb(on)
4.5
2.4
--
--
--
--
42
4.5
4.5
7.5
V
V
V
V
j
T =-40...+150°C: Vbb(under)
j
T =-40...+150°C: Vbb(u rst)
j
Vbb(ucp)
--
6.5
T =-40...+150°C:
j
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
--
0.2
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection6)
Ibb=40 mA
T =-40...+150°C: Vbb(over)
42
42
--
60
63
--
--
0.2
--
52
--
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
T =-40°C: Vbb(AZ)
--
j
67
T =25...+150°C:
j
Standby current (pin 3)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj=150°C:
--
--
12
18
25
60
µA
µA
IL(off)
--
6
--
Leakage output current (included in Ibb(off)
VIN=0
Operating current (Pin 1)7), VIN=5 V
)
IGND
--
1.1
--
mA
5)
6)
At supply voltage increase up to V = 6.5 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
see also V
in table of protection functions and circuit diagram page 7. Meassured without load.
ON(CL)
7)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
Data Sheet
3
2010-Jan-26
®
PROFET BTS 432 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 400 µs if VON > VON(SC)
)
Tj =-40°C:
Tj =25°C:
--
--
24
--
44
--
74
--
--
A
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
22
80
35
--
--
A
Short circuit shutdown delay after input pos. slope
VON > VON(SC) Tj =-40..+150°C: td(SC)
,
400
µs
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb – VON(CL), IL= 30 mA
VON(CL)
--
58
--
V
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation10),
VON(SC)
Tjt
∆Tjt
--
150
--
8.3
--
10
--
--
--
--
1.7
1.3
1.0
V
°C
K
EAS
--
J
Tj Start = 150 °C, single pulse
Vbb = 12 V: ELoad12
Vbb = 24 V: ELoad24
Reverse battery (pin 3 to 1) 11)
Integrated resistor in Vbb line
-Vbb
Rbb
--
--
--
120
32
--
V
Ω
Diagnostic Characteristics
Open load detection current
Tj=-40 °C: IL (OL)
Tj=25..150°C:
2
2
--
--
900
750
mA
(on-condition)
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9)
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t
page 4)
d(SC)
10)
While demagnetizing load inductance, dissipated energy in PROFET is E = VON(CL) * iL(t) dt, approx.
AS
∫
VON(CL)
2
L
1
E
AS
= / * L * I * (
), see diagram page 8.
2
VON(CL) - Vbb
11)
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I of ≈ 0.3 A at V = -32 V through the logic heats up the device. Time allowed under
GND
bb
these condition is dependent on the size of the heatsink. Reverse I
can be reduced by an additional
GND
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Data Sheet
4
2010-Jan-26
®
PROFET BTS 432 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Input and Status Feedback12)
Input turn-on threshold voltage
VIN(T+)
1.5
1.0
--
--
2.4
--
V
V
Tj =-40..+150°C:
Input turn-off threshold voltage
VIN(T-)
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2)
∆ VIN(T)
--
1
0.5
--
--
30
V
µA
VIN = 0.4 V: IIN(off)
VIN = 3.5 V: IIN(on)
td(ST SC)
On state input current (pin 2)
10
80
25
50
µA
µs
µs
Status invalid after positive input slope
(short circuit)
Status invalid after positive input slope
200
400
T =-40 ... +150°C:
j
td(ST)
350
-- 1600
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)
5.4
--
6.1
--
--
0.4
V
j
ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)
j
12)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Data Sheet
5
2010-Jan-26
®
PROFET BTS 432 E2
Truth Table
Input-
Level
Output Status
level
432E2
Normal
operation
Open load
L
H
L
L
H
H
H
H
L
13
)
H
H
L
L
H
H
Short circuit
to GND
Short circuit
L
H
L
H
L
H
14
to V
H
bb
H (L )
Overtem-
perature
Under-
voltage
Overvoltage
L
H
L
H
L
L
L
L
L
L
L
L
L
H
H
H
H
H
L = "Low" Level
H = "High" Level
Terms
Input circuit (ESD protection)
I
bb
R
I
3
IN
I
IN
V
bb
IN
ESD-
ZD ZD
2
I
V
L
I1
I2
ON
I
I
OUT
PROFET
I
5
ST
GND
ST
4
V
GND
V
ST
IN
V
1
I
ZD 6.1 V typ., ESD zener diodes are not designed for
I1
bb
V
GND
OUT
continuous current
R
GND
13)
14)
Power Transistor off, high impedance
Low resistance short V to output may be detected by no-load-detection
bb
Data Sheet
6
2010-Jan-26
®
PROFET BTS 432 E2
Status output
Overvolt. and reverse batt. protection
+5V
+ V
bb
R
RST(ON)
bb
V
ST
Z
R
IN
IN
Logic
ESD-
ZD
V
OUT
ST
GND
R
ST
GND
PROFET
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
< 250 Ω at 1.6 mA, ESD zener diodes are not
ST(ON)
R
GND
designed for continuous current
Signal GND
R
R
= 120 Ω typ., V +Rbb*40 mA = 67 V typ., add
Z
bb
GND IN ST
, R , R for extended protection
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
+ V
bb
high
V
+ V
bb
ON
OUT
Short circuit
detection
Logic
unit
V
ON
ON
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V
bb
V
Z
V
ON
GND disconnect
OUT
GND
3
V
bb
V
ON
clamped to 58 V typ.
IN
2
OUT
PROFET
5
ST
4
GND
1
V
V
V
V
bb
IN
ST
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+)
.
Due to VGND >0, no VST = low signal available.
Data Sheet
7
2010-Jan-26
®
PROFET BTS 432 E2
GND disconnect with GND pull up
3
3
V
V
high
bb
bb
IN
IN
2
2
OUT
OUT
PROFET
PROFET
5
5
ST
ST
4
4
GND
1
GND
1
V
V
V
V
V
IN ST
GND
bb
bb
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Inductive Load switch-off energy
dissipation
V
load
disconnect with charged inductive
bb
E
bb
E
3
AS
V
high
E
E
bb
Load
L
IN
V
2
bb
IN
OUT
PROFET
5
OUT
PROFET
ST
4
=
GND
1
ST
GND
E
R
V
bb
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
1
E
Load
< E , E = / * L * I
L L 2
L
Data Sheet
8
2010-Jan-26
®
PROFET BTS 432 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
BTS 432E2
Logic version
E
Overtemperature protection
T >150 °C, latch function15 16
)
)
j
X
X
T >150 °C, with auto-restart on cooling
Short-circuit to GND protection
j
15)
switches off when V >8.3 V typ.
ON
(when first turned on after approx. 200 µs)
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
X
X
Status feedback for
overtemperature
X
short circuit to GND
X
17)
short to V
bb
-
open load
X
-
undervoltage
overvoltage
Status output type
CMOS
-
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb ON(CL)
X
X
Load current limit
high level (can handle loads with high inrush currents)
medium level
low level (better protection of application)
15)
Latch except when V -V
0 V only if forced externally). So the device remains latched unless V < V
< V
after shutdown. In most cases V
= 0 V after shutdown (V
≠
bb
OUT
ON(SC)
OUT
OUT
(see page 4). No latch
bb
ON(SC)
between turn on and t
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
Low resistance short V to output may be detected by no-load-detection
.
d(SC)
16)
17)
bb
Data Sheet
9
2010-Jan-26
®
PROFET BTS 432 E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: V turn on:
bb
IN
IN
t
d(bb IN)
d(ST)
t
V
bb
ST
*)
VOUT
VOUT
A
I
ST open drain
L
IL(OL)
t
t
A
in case of too early V =high the device may not turn on (curve A)
IN
*) if the time constant of load is too large, open-load-status may
occur
t
d(bb IN) approx. 150 µs
Figure 2a: Switching a lamp,
Figure 3a: Turn on into short circuit,
IN
IN
ST
ST
V
VOUT
OUT
t
d(SC)
I
IL
L
t
t
t
approx. 200µs if Vbb - VOUT > 8.3 V typ.
d(SC)
Data Sheet
10
2010-Jan-26
®
PROFET BTS 432 E2
Figure 3b: Turn on into overload,
Figure 4a: Overtemperature:
Reset if T <T
j
jt
IN
IN
I L
ST
I
L(SCp)
I
L(SCr)
V
OUT
T
J
ST
t
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
t
d(ST)
ST
ST
V
V OUT
OUT
IL
I L
open
**)
t
t
**) current peak approx. 20 µs
Data Sheet
11
2010-Jan-26
®
PROFET BTS 432 E2
Figure 5b: Open load: detection in ON-state, open
Figure 6b: Undervoltage restart of charge pump
load occurs in on-state
V
ON
[V]
VON(CL)
Von
IN
off
t
t
d(OL ST2)
d(ST OL1)
ST
V
V
bb(over)
OUT
off
V bb(o rst)
Vbb(u rst)
Vbb(u cp)
on
normal
normal
I
open
L
V
bb(under)
t
Vbb
[V]
V
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
bb
charge pump starts at Vbb(ucp) =6.5 V typ.
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V
VON(CL)
V
bb
V
V
bb(over)
bb(o rst)
bb
V
V
bb(u cp)
bb(under)
V
bb(u rst)
VOUT
VOUT
ST open drain
ST
t
t
Data Sheet
12
2010-Jan-26
PROFET® BTS 432 E2
Package and Ordering Code
All dimensions in mm
PG-TO220-5-11
SMD PG-TO263-5-2
BTS 432 E2
BTS432E2 E3062A
0.2
10
4.4
A
0.2
10
0.2
9.9
0.1
1.27
B
8.51)
3.7-0.15
4.4
0...0.3
8.5 1)
A
0.1
1.27
0.05
2.4
0.1
0...0.3
0.05
2.4
0...0.15
4 x 1.7
C
0.1
0.1
0.4
5 x 0.8
0.5
3.9
0...0.15
0.1
5 x 0.8
4 x 1.7
0.4
8.4
M
0.25
A C
M
0.25
A
B
0.1 B
1)
Typical
All metal surfaces tin plated, except area of cut.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
GPT09062
Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Revision History
Version Date
Changes
Rev. 1.1
Rev. 1.0
2010-01-26 Page 13: Package drawing for PG-TO220-5-11 corrected.
2009-11-12 RoHS-compliant version of BTS432E2
Removal of straight lead package variant E3043
Page 1, page 13: RoHS compliance statement and Green product feature added
Page 1, page 13: Change to RoHS compliant packages; PG-TO220-5-11 for
standard (staggered) variant; PG-TO263-5-2 for E3062A variant.
Page 2: Thermal resistance junction to ambient for SMD version set to typically
33K/W.
Page 2: Pin marking removed.
Page 6, 9: Discontinued variants removed from truth table & options overview.
Legal disclaimer updated
Data Sheet
13
2010-Jan-26
PROFET® BTS 432 E2
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet
14
2010-Jan-26
相关型号：
BTS432F2
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)
INFINEON
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