BTS100-E3045 [INFINEON]
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN;
| 型号： | BTS100-E3045 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Smart Highside Power Switch
TEMPFET
BTS 100
Features
● P channel
● Enhancement mode
● Temperature sensor with thyristor characteristic
● The drain pin is electrically shorted to the tab
Pin
1
2
3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BTS 100
– 50 V
– 8 A
0.3 Ω
TO-220AB
C67078-A5007-A2
Maximum Ratings
Parameter
Symbol
Values
– 50
Unit
Drain-source voltage
VDS
VDGR
VGS
ID
V
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
– 50
± 20
Continuous drain current, TC = 30 °C
– 8.0
– 1.5
A
ISO drain current
ID-ISO
TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V
Pulsed drain current,
Short circuit current,
TC = 25 °C
Tj = – 55 ... + 150 °C
ID puls
ISC
– 32
– 25
500
40
Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
W
PSCmax
Ptot
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Tj, Tstg
–
– 55 ... + 150
E
°C
–
–
55/150/56
Thermal resistance
Chip-case
Chip-ambient
K/W
Rth JC
Rth JA
≤ 3.1
≤ 75
Semiconductor Group
1
04.96
BTS 100
Electrical Characteristics
at T = 25 °C, unless otherwise specified.
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS(th)
IDSS
V
V
GS = 0, ID = – 0.25 mA
Gate threshold voltage
GS = VDS, ID = – 1 mA
Zero gate voltage drain current
GS = 0 V, VDS = – 50 V
– 50
–
–
V
– 2.5
– 3.0
– 3.5
µA
V
Tj = 25 °C
Tj = 150 °C
–
–
– 1
– 100
– 10
– 300
Gate-source leakage current
GS = – 20 V, VDS = 0
IGSS
V
Tj = 25 °C
Tj = 150 °C
–
–
– 10
– 2
– 100
– 4
nA
µA
Drain-source on-state resistance
GS = – 10 V, ID = – 5 A
RDS(on)
Ω
V
–
0.25
0.3
Dynamic Characteristics
Forward transconductance
gfs
S
V
DS ≥ 2 × ID × RDS(on)max, ID = – 5 A
Input capacitance
GS = 0, VDS = – 25 V, f = 1 MHz
Output capacitance
GS = 0, VDS = – 25 V, f = 1 MHz
Reverse transfer capacitance
GS = 0, VDS = – 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
1.5
–
2.3
4.0
Ciss
Coss
Crss
pF
V
900
350
1200
550
V
–
V
–
–
–
130
20
230
30
td(on)
tr
ns
V
R
CC = – 30 V, VGS = – 10 V, ID = – 2.9 A,
GS = 50 Ω
60
95
Turn-off time toff, (toff = td(off) + tf)
td(off)
tf
–
–
70
55
90
75
V
R
CC = – 30 V, VGS = – 10 V, ID = – 2.9 A,
GS = 50 Ω
Semiconductor Group
2
BTS 100
Electrical Characteristics (cont’d)
at T = 25 °C, unless otherwise specified.
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Continuous source current
Pulsed source current
IS
–
–
–
–
– 8.0
– 32
A
ISM
VSD
Diode forward on-voltage
V
IF = – 16 A, VGS = 0
–
–
–
– 1.0
90
– 1.7
Reverse recovery time
IF = IS, diF/dt = – 100 A/µs, VR = – 30 V
trr
ns
µC
–
–
Reverse recovery charge
IF = IS, diF/dt = – 100 A/µs, VR = – 30 V
Qrr
0.23
Temperature Sensor
Forward voltage
VTS(on)
V
I
TS(on) = – 10 mA, T = – 55 ... + 150 °C
–
–
– 1.4
–
– 1.5
– 10
j
Sensor override, tp ≤ 100 µs
T = – 55 ... + 160 °C
j
Forward current
ITS(on)
mA
T = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
T = – 55 ... + 160 °C
j
–
–
–
–
– 10
j
– 600
Holding current, VTS(off) = – 5 V, Tj = 25 °C
Tj = 150 °C
IH
– 0.05
– 0.05
– 0.1
– 0.2
– 0.5
– 0.3
Switching temperature
VTS = – 5 V
TTS(on)
toff
°C
µs
150
0.5
–
–
–
Turn-off time
VTS = – 5 V, ITS(on) = – 2 mA
2.5
Semiconductor Group
3
BTS 100
Examples for short-circuit protection
at T = – 55 ... + 150 °C, unless otherwise specified.
j
Parameter
Symbol
Example
2
Unit
1
–
Drain-source voltage
Gate-source voltage
Short-circuit current
Short-circuit dissipation
Response time
VDS
VGS
ISC
– 15
– 10
≤ – 25
375
– 30
–
–
–
–
V
– 8.2
≤ – 16
480
A
PSC
tSC(off)
W
ms
T = 25 °C, before short circuit
j
55
55
–
Short-circuit protection ISC = f (VDS)
Parameter: VGS
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj = – 55 ... + 150 °C
DiagramtodetermineISC forTj =–55...+150˚C
Semiconductor Group
4
BTS 100
Max. power dissipation Ptot = f (TC)
Typ. drain-source on-state resistance
DS(on) = f (ID)
R
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp = 80 µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5
BTS 100
Drain-source on-state resistance
DS(on) = f (Tj)
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = – 1 mA
R
Parameter: ID = – 5 A, VGS = – 10 V
Typ. transfer characteristic
ID = f (VGS)
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = – 25 V
Parameter: tp = 80 µs, VDS = – 25 V
Semiconductor Group
6
BTS 100
Continuous drain current ID = f (TC)
Parameter: VGS ≥ – 10 V
Forward characteristics of reverse diode
IF = f (VSD)
Parameter: Tj, tp = 80 µs
Typ. gate-source leakage current
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f = 1 MHz
IGSS = f (TC)
Parameter: VGS = – 20 V, VDS = 0
Semiconductor Group
7
BTS 100
Transient thermal impedance ZthJC = f (tp)
Parameter: D = tp/T
Semiconductor Group
8
BTS 100
Package Outlines
TO 220 AB
Standard
Ordering Code
C67078-A5007-A2
TO 220 AB
SMD Version E3045
SMD T&R E3045A
Ordering Code
C67078-A5007-A7
C67078-A5007-A12
9.9
9.5
4.4
1.3
3.7
1)
0.75
2.54
0.5
2.4
1.05
2.54
GPT05155
1) punch direction, burr max. 0.04
2) dip tinning
3) max. 14.5 by dip tinning press burr max. 0.05
Semiconductor Group
9
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