BTF6070-2ERV [INFINEON]
The BTF6070-2ERV is especially designed for applications with higher safety requirements, such as braking systems (ABS, ESP) and therefore ISO26262 qualified (ASIL B, Safety manual is available).;型号: | BTF6070-2ERV |
厂家: | Infineon |
描述: | The BTF6070-2ERV is especially designed for applications with higher safety requirements, such as braking systems (ABS, ESP) and therefore ISO26262 qualified (ASIL B, Safety manual is available). |
文件: | 总42页 (文件大小:1340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROFET™+ 24V
BTF6070-2ERV
Smart High-Side Power Switch Dual Channel, 60 mΩ
Package PG-TDSO-14
Marking 6070-2ERV
1
Overview
Application
•
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Suitable for 12 V and 24 V Trucks and Transportation Systems
Specially designed to drive Valve Applications
Can be used for PWM frequencies up to 1.5 kHz
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
VBAT
Voltage Regulator
T1
OUT
VS
GND
DZ
CVDD
CVS
VS
VDD
GPIO
GPIO
RDEN
DEN
IN0
RIN
OUT0
IN1
IS0
GPIO
RIN
COUT
Valve
ADC IN
RSENSE
Micro-
controller
CSENSE
OUT1
COUT
IS1
RSENSE
ADC IN
GND
GND
Bulb
CSENSE
D
Page-1.emf
Application Diagram with BTF6070-2ERV
Datasheet
www.infineon.com
1
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Overview
Basic Features
•
•
•
•
•
•
•
•
•
•
•
Dual channel device
Fast switching device
For 12 V and 24 V grounded loads
Very low stand-by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product (RoHS compliant)
AEC qualified
Description
The BTF6070-2ERV is a 60 mΩ dual channel Smart High-Side Power Switch, embedded in a PG-TDSO-14,
Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by a
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is
specially designed to drive Valve Applications in the harsh automotive environment. For lighting applications
the nominal bulb load of P10W+P5W 24 V or P10W 12 V is considered.
Table 1
Product Summary
Parameter
Symbol
VS(OP)
Value
5 V ... 36 V
65 V
Operating voltage range
Maximum supply voltage
VS(LD)
Maximum ON state resistance at TJ = 150°C per channel
Nominal load current (one channel active)
Nominal load current (all channels active)
Typical current sense ratio
RDS(ON)
IL(NOM)1
IL(NOM)2
kILIS
135 mΩ
3 A
2.3 A
1730
Minimum current limitation
IL5(SC)
9 A
Maximum standby current with load at TJ = 25°C
IS(OFF)
500 nA
Diagnostic Functions
•
•
•
•
•
•
Proportional load current sense for the 2 channels
Open load detection in ON and OFF
Short circuit to battery and ground indication
Overtemperature switch off detection
Stable diagnostic signal during short circuit
Enhanced kILIS dependency with temperature and load current
Protection Functions
•
•
•
Stable behavior during undervoltage
Reverse polarity protection with external components
Secure load turn-off during logic ground disconnection with external components
Datasheet
2
Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Overview
•
•
•
Overtemperature protection with latch
Overvoltage protection with external components
Enhanced short circuit operation
Datasheet
3
Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Block Diagram
2
Block Diagram
Channel 0
VS
voltage sen sor
int ern al
power
supply
over
temperatu re
T
clamp for
ind uctive load
gate control
&
charge p ump
IN 0
driver
logic
over current
switch limit
DEN
ESD
protection
load current sense and
open load detection
OUT 0
IS0
forward voltage drop detection
VS
Channel 1
T
IN1
IS1
Cont rol and pro tec tion ci rcuit equi valent to channel 0
OUT 1
Block diagramDxS.emf
GND
Figure 1
Block Diagram for the BTF6070-2ERV
Datasheet
4
Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
GND
1
2
14
13
OUT0
OUT0
IN0
DEN
IS0
3
4
5
12
11
10
OUT0
NC
NC
OUT1
6
7
9
8
OUT1
OUT1
IN1
IS1
Pinout dual SO14.vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Table 2
Pin Definition and Functions
Pin
Symbol
GND
IN0
Function
1
GrouND; Ground connection
2
INput channel 0; Input signal for channel 0 activation
Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
Sense 0; Sense current of the channel 0
3
DEN
IS0
4
5, 11
NC
Not Connected; No internal connection to the chip
INput channel 1; Input signal for channel 1 activation
Sense 1; Sense current of the channel 1
6
IN1
7
IS1
8, 9, 10
12, 13, 14
OUT1
OUT0
OUTput 1; Protected high side power output channel 11)
OUTput 0; Protected high side power output channel 01)
Voltage Supply; Battery voltage
Cooling Tab VS
1) All output pins of a given channel must be connected together on the PCB. All pins of an output are internally
connected together. PCB traces have to be designed to withstand the maximum current which can flow.
Datasheet
5
Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
IVS
VS
VDS0
VS
IIN0
IOUT0
IN0
IN1
OUT0
OUT1
VIN0
VDS1
VOUT0
VIN1
IDEN
DEN
IS0
IOUT1
VDEN
VIS0
IIS1
VOUT1
IS1
GND
VIS1
IGND
voltage and current convention.vsd
Figure 3
Voltage and Current Definition
Datasheet
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Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 3
Absolute Maximum Ratings 1)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit
Note or
Test Condition
Number
Min.
Max.
Supply Voltages
Supply voltage
VS
-0.3
0
-
-
48
28
V
V
-
P_4.1.1
P_4.1.2
Reverse polarity voltage
-VS(REV)
t < 2 min
TA = 25°C
RL ≥ 25 Ω
Supply voltage for short circuit VBAT(SC)
0
-
36
V
RECU = 30 mΩ
P_4.1.3
protection
R
Supply = 10 mΩ
LSupply = 5 µH
Cable= 7 mΩ/m
Cable= 1 µH/m,
R
L
l = 0 to 40 m
See Chapter 6
and Figure 29
Supply voltage for Load dump
protection
VS(LD)
-
-
-
-
65
V
2)RI = 2 Ω
RL = 25 Ω
P_4.1.12
P_4.1.4
Short Circuit Capability
3)
Permanent short circuit
IN pin toggles
nRSC1
100
k cycles
V
= 28 V
Supply
R
R
ECU = 20 mΩ
Supply = 10 mΩ
LSupply= 5 µΗ
R
Cable = 0 mΩLCable
= < 1 µΗ
3)
Permanent short circuit
IN pin toggles
nRSC_highL
-
-
100
k cycles
V
= 28 V
P_4.1.5
Supply
RECU = 30 mΩ
Supply = 10 mΩ
Supply = 5 µΗ
RCable = 280 mΩ
R
L
LCable = 40 µΗ
Input Pins
Voltage at INPUT pins
Voltage at INPUT pins
Current through INPUT pins
Voltage at DEN pin
VIN
-0.3
-
-
-
-
-
6
7
2
6
7
2
V
-
P_4.1.13
P_4.1.6
VIN
V
t < 2 min
IIN
-2
mA
V
-
P_4.1.14
P_4.1.15
P_4.1.50
P_4.1.16
VDEN
VDEN
IDEN
-0.3
-
-
Voltage at DEN pin
V
t < 2 min
Current through DEN pin
-2
-
mA
-
Datasheet
7
Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
General Product Characteristics
Table 3
Absolute Maximum Ratings 1)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit
Note or
Test Condition
Number
Min.
Max.
Sense Pin
Voltage at IS pin
Current through IS pin
Power Stage
VIS
IIS
-0.3
-25
-
-
VS
V
-
-
P_4.1.19
P_4.1.20
50
mA
Load current
| IL |
-
-
-
-
IL(LIM)
A
-
P_4.1.21
P_4.1.22
Power dissipation (DC)
PTOT
1.8
W
TA = 85°C
TJ < 150°C
Maximum energy dissipation
repetitive pulse (one channel)
EAR_2A
-
-
-
-
40
mJ
20 Mio. cycles
P_4.1.24
P_4.1.35
IL(0) = 2 A
T
J(0) = 105°C
1)
Negative voltage slope at output -dVOUT/dt
-20
V/µs
V
= 28 V
OUT
(inductive clamping)
to 28 V - VDS(AZ) VIN
= 0 V
1)
Positive voltage slope at output dVOUT/dt
-
-
-
-
20
65
V/µs
V
V
= 0 V to 28 V P_4.1.36
OUT
VIN = 0 V
Voltage at power transistor
Currents
VDS
-
P_4.1.26
Current through ground pin
Current through ground pin
Temperatures
I GND
I GND
-20
-
-
20
20
mA
mA
-
P_4.1.27
P_4.1.7
-150
t < 2 min
Junction temperature
Storage temperature
ESD Susceptibility
TJ
-40
-55
-
-
150
150
°C
°C
-
-
P_4.1.28
P_4.1.30
TSTG
ESD susceptibility (all pins)
VESD
VESD
-2
-5
-
-
2
5
kV
kV
4) HBM
4) HBM
P_4.1.31
P_4.1.32
ESD susceptibility OUT Pin vs.
GND and VS connected
ESD susceptibility
VESD
VESD
-500
-750
-
-
500
750
V
V
5) CDM
5) CDM
P_4.1.33
P_4.1.34
ESD susceptibility pin (corner
pins)
1) Not subject to production test. Specified by design
2) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1
3) Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit capability on
the Back Cover of this document
4) ESD susceptibility, Human Body Model “HBM” according to AEC Q100-002
5) ESD susceptibility, Charged Device Model “CDM” according to AEC Q100-011
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Datasheet
8
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
General Product Characteristics
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2
Functional Range
Table 4
Functional Range TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
28
Unit Note or
Test Condition
Number
Min.
Max.
36
Nominal operating voltage
Extended operating voltage
VNOM
8
5
V
V
-
1)3)
P_4.2.1
P_4.2.2
VS(OP)
-
48
VIN = 4.5 V
RL = 25 Ω
VDS < 0.5 V
2)
Minimum functional supply
voltage
VS(OP)_MIN
3.8
3
4.3
3.5
5
V
V
V
= 4.5 V
P_4.2.3
P_4.2.4
IN
RL = 25 Ω
From IOUT = 0 A
to VDS < 0.5 V;
see Figure 16
2)
Undervoltage shutdown
VS(UV)
4.1
V = 4.5 V
IN
VDEN = 0 V
RL = 25 Ω
From VDS < 1 V
to IOUT = 0 A
See Figure 16
3)
Undervoltage shutdown
hysteresis
VS(UV)_HYS
IGND_1
-
-
850
5
-
mV
mA
-
P_4.2.13
P_4.2.5
Operating current
One channel active
7
VIN = 5.5 V
V
DEN = 5.5 V
Device in RDS(ON)
VS = 36 V
Operating current
All channels active
IGND_2
-
-
8.3
0.1
12
mA
µA
VIN = 5.5 V
P_4.2.6
P_4.2.7
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
2) VS = 36 V
VOUT = 0 V
Standby current for whole device IS(OFF)
with load (ambient)
0.5
V
V
IN floating
DEN floating
TJ ≤ 85°C
Datasheet
9
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
General Product Characteristics
Table 4
Functional Range TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
-
Unit Note or
Test Condition
Number
Min.
Max.
Maximum standby current for
whole device with load
IS(OFF)_150
-
10
µA
VS = 36 V
OUT = 0 V
VIN floating
DEN floating
P_4.2.10
V
V
TJ = 150°C
Standby current for whole device IS(OFF_DEN)
-
1.15
-
mA
3) VS = 36 V
P_4.2.8
with load, diagnostic active
V
OUT = 0 V
VIN floating
DEN = 5.5 V
V
1) Parameter deviation possible: RDSON, IIS(FAULT) & timing parameters. Protection functions are working.
2) Test at TJ = -40°C only
3) Not subject to production test. Specified by design.
Note:
Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics
table.
4.3
Thermal Resistance
Table 5
Thermal Resistance
Parameter
Symbol
Values
Typ.
2
Unit Note or
Test Condition
Number
Min.
Max.
1)
Junction to case
RthJC
RthJA
-
-
-
-
K/W
K/W
P_4.3.1
P_4.3.2
1)2)
Junction to ambient
All channels active
27
1) Not subject to production test. Specified by design.
2) Specified RthJA value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board with 1 W power
dissipation equally dissipated for both channels at TA=105°C ; The product (chip + package) was simulated on a 76.4
x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Where applicable, a thermal via array
under the exposed pad contacts the first inner copper layer. Please refer to Figure 4.
Datasheet
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PROFET™+ 24V
BTF6070-2ERV
General Product Characteristics
4.3.1
PCB Set-up
70µm
1.5mm
35µm
PCB 2s2p.emf
0.3mm
Figure 4
2s2p PCB Cross Section
Figure 5
1s0p PCB Cross Section
PCB bottom view
PCB top view
1
2
3
4
5
6
7
14
13
12
11
10
9
COOLIN
G
TAB
VS
8
PCBcooling.emf
Figure 6
PC Board Top and Bottom View for Thermal Simulation with 600 mm2 Cooling Area
Datasheet
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Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
General Product Characteristics
4.3.2
Thermal Impedance
BTF6070-2ERV
100
10
1
2s2p
1s0p - 600 mm²
1s0p - 300 mm²
1s0p - footprint
0,1
0,0001
0,001
0,01
0,1
1
10
100
1000
Time (s)
Figure 7
Typical Thermal Impedance. Both channels active. TA= 85°C.
PCB set-up according Figure 4 / Figure 5
BTT6070-2ERV
100
1s0p - Tambient = 105°C
90
80
70
60
50
40
30
0
100
200
300
400
500
600
Cooling area (mm²)
Figure 8
Typical Thermal Resistance. Both channels active. TA=85°C. PCB set-up 1s0p
Datasheet
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Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Power Stage
5
Power Stage
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-State Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 9
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
240
220
200
180
160
140
120
100
80
120
110
100
90
T
= 150°C
= 25°C
= -40°C
J
T
J
T
J
80
70
60
50
60
40
40
30
-40
-20
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
Junction Temperature T [°C]
Supply Voltage V [V]
J
S
Figure 9
Typical ON-State Resistance
A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope,
which is optimized in terms of EMC emission.
5.2
Turn ON/OFF Characteristics with Resistive Load
Figure 10 shows the typical timing when switching a resistive load.
IN
VIN_H
VIN_L
t
VOUT
dV/dt ON
dV/dt OFF
tON
90% VS
tOFF_delay
70% VS
30% VS
10% VS
tON_delay
tOFF
t
Switchingtimes.emf
Figure 10 Switching a Resistive Load Timing
Datasheet
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PROFET™+ 24V
BTF6070-2ERV
Power Stage
5.3
Inductive Load
5.3.1
Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 11 and Figure 12 for details. Nevertheless,
the maximum allowed load inductance is limited.
VS
ZDS(AZ)
VDS
INx
LOGIC
IL
VBAT
GND
ZGND
OUTx
VOUT
VINx
L, RL
Output_clamp.vsd
Figure 11 Output Clamp
IN
t
VOUT
VS
VDS(AZ)
t
VS-VDS(AZ)
IL
t
Switchingan inductance.emf
Figure 12 Switching an Inductive Load Timing
Datasheet
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Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Power Stage
5.3.2
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTF6070-2ERV. This energy can
be calculated with following equation:
RL IL
VS – VDS(AZ)
----- ------------------------------
L
RL
⎛
⎞
⎠
------------------------------
VS – VDS(AZ)
E = VDS(AZ)
ln 1 –
+ IL
(5.1)
⎝
RL
Following equation simplifies under the assumption of RL = 0 Ω.
VS
L I2 1 –
(5.2)
1
--
⎛
⎞
⎠
------------------------------
VS – VDS(AZ)
E =
⎝
2
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 13 for
the maximum allowed energy dissipation as a function of the load current.
1000
100
10
1
0
1
2
3
4
5
6
7
IL(A)
Figure 13 Maximum Energy Dissipation Single Pulse, TJ_START = 150°C
Datasheet
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Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Power Stage
5.4
Inverse Current Capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current
IINV will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 14). The
output stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse.In that
particular case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV
should not be higher than IL(INV). IL(INV) can be considered as 3 A.
If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel is ON, the
diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of VINV, a
parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV
vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions
are available.
VBAT
VS
Gate
driver
Device
logic
VINV
INV
Comp.
IL(INV)
OUT
GND
ZGND
inverse current.vsd
Figure 14 Inverse Current Circuitry
Datasheet
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Rev. 1.00
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PROFET™+ 24V
BTF6070-2ERV
Power Stage
5.5
Electrical Characteristics Power Stage
Table 6
Electrical Characteristics: Power Stage
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
120
Unit Note or
Test Condition
Number
Min.
RDS(ON)_150 90
Max.
ON-state resistance per
channel
135
mΩ IL = IL4 = 4 A
VIN = 4.5 V
P_5.5.1
TJ = 150°C
See Figure 9
ON-state resistance per
channel
RDS(ON)_25
IL(NOM)1
-
60
3
-
mΩ 1) TJ = 25°C
P_5.5.21
P_5.5.2
P_5.5.3
Nominal load current
One channel active
-
-
A
1) TA = 85°C
TJ < 150°C
Nominal load current
All channels active
IL(NOM)2
-
2.3
10
70
0.1
-
A
Output voltage drop limitation VDS(NL)
at small load currents
-
22
75
0.5
mV
V
IL = IL0 = 50 mA P_5.5.4
Drain to source clamping
voltage VDS(AZ) = (VS - VOUT
VDS(AZ)
IL(OFF)
65
-
IDS = 20 mA
See Figure 12
2)
P_5.5.5
P_5.5.6
)
Output leakage current per
µA
V floating
IN
channel TJ ≤ 85°C
VOUT = 0 V
TJ ≤ 85°C
Output leakage current per
channel TJ = 150°C
IL(OFF)_150
-
1
8
µA
VIN floating
VOUT = 0 V
TJ = 150°C
P_5.5.8
Slew rate
30% to 70% VS
dV/dtON
-dV/dtOFF
ΔdV/dt
1
2.4
2.4
0
4.5
4.5
0.5
V/µs RL = 25 Ω
VS = 28 V
P_5.5.11
P_5.5.12
P_5.5.13
See Figure 10
Slew rate
70% to 30% VS
1
V/µs
Slew rate matching
-0.5
V/µs
dV/dtON - dV/dtOFF
Turn-ON time to VOUT = 90% VS tON
Turn-OFF time to VOUT = 10% VS tOFF
5
28
28
5
70
70
20
µs
µs
µs
P_5.5.14
P_5.5.15
P_5.5.16
5
Turn-ON / OFF matching
ΔtSW
-20
tOFF - tON
Turn-ON time to VOUT = 10% VS tON_delay
Turn-OFF time to VOUT = 90% VS tOFF_delay
-
-
17
17
40
40
µs
µs
P_5.5.17
P_5.5.18
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BTF6070-2ERV
Power Stage
Table 6
Electrical Characteristics: Power Stage (cont’d)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
115
Unit Note or
Test Condition
Number
Min.
Max.
Switch ON energy
EON
-
-
µJ
1) RL = 25 Ω
OUT = 90% VS
P_5.5.19
V
VS = 36 V
Switch OFF energy
EOFF
-
173
-
µJ
1) RL = 25 Ω
P_5.5.20
V
OUT = 10% VS
VS = 36 V
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only
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Protection Functions
6
Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction
of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside”
normal operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pins.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTF6070-2ERV to ensure switching OFF of channels.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 15 sketches
the situation.
ZGND is recommended to be a resistor in series to a diode.
ZIS(AZ)
VS
ZD(AZ)
VBAT
ZDS(AZ)
ISx
RSENSE
DEN
INx
LOGIC
RDEN
RIN
IOUT(GND)
OUTx
Loss of ground protection.emf
Valve
ZDESD
GND
RIS
ZGND
Figure 15 Loss of Ground Protection with External Components
6.2
Undervoltage Protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold
ON. If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as
the supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the
switch is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in
the VNOM range. Figure 16 sketches the undervoltage mechanism.
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Protection Functions
VOUT
VS
VS(UV)
VS(OP)
Undervoltage behavior.emf
Figure 16 Undervoltage Behavior
6.3
Overvoltage Protection
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.
Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than
VS(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a
result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx and
DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the case the
device was ON, prior to overvoltage, the BTF6070-2ERV remains ON. In the case the BTF6070-2ERV was OFF,
prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above VBAT(SC)
and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the
ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply
voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS
capability. The values for ZIS(A), ZD(AZ) and ZDS(AZ) are included in the parameter P_6.6.3. ZGND is recommended
to be a resistor in series to a diode.
ISOV
ZIS(AZ)
VS
ZD(AZ)
VBAT
ZDS(AZ)
ISx
RSENSE
DEN
INx
LOGIC
RDEN
RIN
OUTx
ZDESD
Overvoltage protection.emf
Valve
GND
RIS
ZGND
Figure 17 Overvoltage Protection with External Components
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Protection Functions
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current
in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the
logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor.
Figure 18 shows a typical application. RGND resistor is used to limit the current in the Zener protection of the
device. Resistors RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection
stage. RSENSE is used to limit the current in the sense transistor which behaves as a diode. The recommended
value for RDEN = RIN = 10 kΩ. ZGND is recommended to be a resistor in series to a diode.
During reverse polarity, no protection functions are available.
Microcontroller
protection diodes
ZIS(AZ)
VS
ZD(AZ)
ZDS(AZ)
ISx
RSENSE
VDS(REV)
DEN
INx
RDEN
LOGIC
-VS(REV)
RIN
OUTx
ZDESD
Reversepolarity.emf
GND
Valve
IS
ZGND
RIS
Figure 18 Reverse Polarity Protection with External Components
6.5
Overload Protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTF6070-2ERV
offers several protection mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which
affects the current flowing in the DMOS.
6.5.2
Temperature Limitation in the Power DMOS
Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of
either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch
OFF latches the output until the temperature has reached an acceptable value. Figure 19 gives a sketch of the
situation.
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch
is switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).
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Protection Functions
INx
t
ILx
LOAD CURRENT BELOW
LIMITATION PHASE
LOAD CURRENT LIMITATION PHASE
IL(x)SC
IL(NOM)
t
TDMOSx
TJ(SC)
Cool DownPhase
ΔTJ(SW)
TA
t
tsIS(FAULT)
tsIS(OC_blank)
IISx
IIS(FAULT)
IL(NOM) / kILIS
0A
VDEN
t
t
tsIS(OF F)
0V
Hard start.emf
Figure 19 Overload Protection
Note:
For better understanding, the time scale is not linear. The real timing of this drawing is application
dependant and cannot be described.
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Protection Functions
6.6
Electrical Characteristics for the Protection Functions
Table 7
Electrical Characteristics: Protection
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Loss of Ground
Output leakage current while IOUT(GND)
-
0.1
-
µA
1)2) VS = 45 V
P_6.6.1
P_6.6.2
GND disconnected
See Figure 15
Reverse Polarity
Drain source diode voltage
during reverse polarity
VDS(REV)
400
650
700
mV
IL = - 2 A
TJ = 150°C
See Figure 18
Overvoltage
Overvoltage protection
VS(AZ)
65
70
75
V
ISOV = 5 mA
See Figure 17
P_6.6.3
P_6.6.4
Overload Condition
3)
Load current limitation
IL5(SC)
∆TJ(SW)
TJ(SC)
9
11
80
14
-
A
K
V = 10 V
DS
See Figure 19
4) 3) See Figure 19 P_6.6.8
Dynamic temperature
increase while switching
-
Thermal shutdown
temperature
150
-
170 4) 200 4) °C
30
5) See Figure 19
2) See Figure 19
P_6.6.10
P_6.6.11
Thermal shutdown hysteresis ∆TJ(SC)
-
K
1) All pins are disconnected except VS and OUT.
2) Not Subject to production test, specified by design
3) Test at TJ = -40°C only
4) Functional test only
5) Test at TJ = +150°C only
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Diagnostic Functions
7
Diagnostic Functions
For diagnosis purpose, the BTF6070-2ERV provides a combination of digital and analog signals at the IS Pins
(IS0 and IS1). These signals are called SENSE. In case the diagnostic is disabled via DEN, pins IS become high
impedance. In case DEN is activated, the sense current of both channels is enabled. Table 8 gives the truth
table.
Table 8
Diagnostic Truth Table
DEN
IS0
IS1
0
1
Z
Z
Sense output 0 IIS(0)
Sense output 1 IIS(1)
7.1
IS Pins
The BTF6070-2ERV provides a sense signal called IIS at pins ISx. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load
at OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pins and
diagnostic mechanism is described on Figure 20. The accuracy of the sense current depends on temperature
and load current. Due to the ESD protection, in connection to VS, it is not recommended to share the IS pins
with other devices if these devices are using another battery feed. The consequence is that the unsupplied
device would be fed via the IS pin of the supplied device.
VS
IIS(FAULT)
IIS0 = IL0 / kILIS
ZIS(AZ)
ZIS(AZ)
IIS(FAULT)
IIS1
IL1 / kILIS
=
1
0
0
1
IS0
DEN
IS1
1
0
1
0
Sense schematics.emf
Figure 20 Diagnostic Block Diagram
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Diagnostic Functions
7.2
SENSE Signal in Different Operating Modes
Table 9 gives a quick reference for the state of the IS pins during device operation.
Table 9
Sense Signal, Function of Operation Mode
Operation Mode
Normal operation
Short circuit to GND
Overtemperature
Short circuit to VS
Open Load
Input level Channel X DEN
OFF H
Output Level Diagnostic Output at ISx
Z
Z
~ GND
Z
Z
Z
VS
IIS(FAULT)
< VOL(OFF)
> VOL(OFF)
Z
1)
IIS(FAULT)
Inverse current
~ VINV
~ VS
< VS
~ GND
Z
IIS(FAULT)
IIS = IL / kILIS
IIS(FAULT)
IIS(FAULT)
IIS(FAULT)
Normal operation
Current limitation
Short circuit to GND
ON
Overtemperature TJ(SW)
event
Short circuit to VS
Open Load
VS
IIS < IL / kILIS
IIS < IIS(OL)
2)
~ VS
3)
Inverse current
Underload
~ VINV
IIS < IIS(OL)
4)
~ VS
IIS(OL) < IIS < IL / kILIS
Don’t care
Don’t care
L
Don’t care
Z
1) Stable with additional pull-up resistor.
2) The output current has to be smaller than IL(OL)
.
3) After maximum tINV
.
4) The output current has to be higher than IL(OL)
.
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Diagnostic Functions
7.3
SENSE Signal in the Nominal Current Range
Figure 21 and Figure 22 show the current sense as a function of the load current in the power DMOS. Usually
a pull-down resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to
limit the power losses in the sense circuitry. A typical value is 1.8 kΩ. The blue curve represents the ideal sense
current, assuming an ideal kILIS factor value. The red curves shows the accuracy the device provides across full
temperature range at a defined current.
4
3.5
3
2.5
2
1.5
1
0.5
min/max Sense Current
typical Sense Current
0
0
1
2
3
4
5
6
IL [A]
BTF6070-2ERV
Figure 21 Current Sense for Nominal Load
7.3.1
SENSE Signal Variation as a Function of Temperature and Load Current
In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement,
a calibration on the application is possible. To avoid multiple calibration points at different load and
temperature conditions, the BTF6070-2ERV allows limited derating of the kILIS value, at a given point
(TJ= +25°C). This derating is described by the parameter ΔkILIS. Figure 22 shows the behavior of the sense
current, assuming one calibration point at nominal load at +25°C.
The blue line indicates the ideal kILIS ratio.
The red lines indicate the derating on the parameter across temperature and voltage, assuming one
calibration point at nominal temperature and nominal battery voltage.
The black lines indicate the kILIS accuracy without calibration.
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Diagnostic Functions
3000
2500
2000
1500
1000
calibrated k ILIS
min/max kILIS
typical kILIS
500
0
1
2
3
4
5
6
IL [A]
BTF6070-2ERV
Figure 22 Improved Current Sense Accuracy with One Calibration Point
7.3.2
SENSE Signal Timing
Figure 23 shows the timing during settling and disabling of the SENSE.
VINx
t
ILx
tON
tOFF
tON
90% of
IL static
t
VDEN
t
t
IISx
tsIS(LC)
tsIS(ON)
tsIS(OFF)
tsIS(ON_DEN)
90% of
IS static
I
current sensesettlingdisablingtime.emf
Figure 23 Current Sense Settling / Disabling Timing
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Diagnostic Functions
7.3.3
SENSE Signal in Open Load
7.3.3.1 Open Load in ON Diagnostic
If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the
power DMOS is below this value, the device recognizes a failure, if the DEN is selected. In that case, the SENSE
current is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24
shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve
shows the ideal current sense.
IISx
IIS(OL)
Sense for OL.emf
ILx
IL(OL)
Figure 24 Current Sense Ratio for Low Currents
7.3.3.2 Open Load in OFF Diagnostic
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to
be taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the
complete system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion,
etc... in the application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel
x is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized
by the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is
switched to the IIS(FAULT)
.
An additional RPD resistor can be used to pull VOUT to 0 V. Otherwise, the OUT pin is floating. This resistor can
be used as well for short circuit to battery detection, see Chapter 7.3.4.
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Diagnostic Functions
Vbat
SOL
VS
IIS(FAULT)
OL
comp.
OUTx
ISx
ILOFF
Ileakage
GND
Valve
VOL(OFF)
ZGND
Open Load in OFF.emf
Figure 25 Open Load Detection in OFF Electrical Equivalent Circuit
7.3.3.3 Open Load Diagnostic Timing
Figure 26 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please
note that a delay tsIS(FAULT_OL_OFF) has to be respected after the falling edge of the input, when applying an open
load in OFF diagnosis request, otherwise the diagnosis can be wrong.
Load is present
Open load
VIN
VOUT
t
VS-VOL(OFF)
RDS(ON) x IL
shutdown with load
t
t
IOUT
tsIS(FAULT_OL_ON_OFF)
IIS
tsIS(LC)
Error Settling Disabling Time.emf
t
Figure 26 Sense Signal in Open Load Timing
7.3.4
SENSE Signal with OUT in Short Circuit to VS
In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTF6070-2ERV, which can be recognized at the current
sense signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In
that case, an external resistor to ground RSC_VS is required. Figure 27 gives a sketch of the situation.
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Diagnostic Functions
Vbat
VS
IIS(FAULT)
VBAT
OL
comp.
ISx
OUTx
VOL(OFF)
GND
Valve
IS
ZGND
RIS
RSC_VS
Sh or t c irc uit to VS .em f
Figure 27 Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit
7.3.5
SENSE Signal in Case of Overload
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or
the absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the
thermal shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic
temperature condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If
the DEN pin is activated the SENSE follows the output stage. If no reset of the latch occurs, the device remains
in the latching phase and IS(FAULT) at the IS pin, even though the DMOS is OFF.
7.3.6
SENSE Signal in Case of Inverse Current
In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and
indicate open load in ON state. The unaffected channels indicate normal behavior as long as the IINV current is
not exceeding the maximum value specified in Chapter 5.4.
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Diagnostic Functions
7.4
Electrical Characteristics Diagnostic Functions
Table 10 Electrical Characteristics: Diagnostics
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or Test Condition Number
Min.
Load Condition Threshold for Diagnostic
Max.
Open load detection
threshold in OFF state
VS - VOL(OFF)
4
-
-
-
6
V
VIN = 0 V
DEN = 4.5 V
See Figure 26
P_7.5.1
P_7.5.2
P_7.5.36
V
Open load detection
threshold in ON state
IL(OL)
5
35
50
mA VIN = VDEN = 4.5 V
IIS(OL) = 10 µA
See Figure 24
Open load detection
threshold in ON state
(10 mA)
IL2(OL)
10
mA VIN = VDEN = 4.5 V
IIS(OL) = 16 µA
Sense Pin
IS pin leakage current
when sense is disabled
IIS_(DIS)
-
0.02
-
1
µA VIN = 4.5 V
P_7.5.4
P_7.5.6
V
DEN = 0 V
IL = IL4 = 4 A
Sense signal saturation
voltage
VS - VIS(RANGE) 1.5
3.5
V
VIN = 0 V
V
OUT = VS > 10 V
VDEN = 4.5 V
IIS = 6 mA
Sense signal maximum
current in fault condition
IIS(FAULT)
6
12.5
70
30
75
mA VIS = VIN = 0 V
P_7.5.7
P_7.5.3
V
V
OUT = VS > 10 V
DEN = 4.5 V
See Figure 20
Sense pin maximum
voltage
VIS(AZ)
65
V
IIS = 5 mA
See Figure 20
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
Current sense ratio
IL0 = 50 mA
kILIS0
kILIS1
kILIS2
kILIS3
kILIS4
-50% 1900
-22% 1730
-12% 1730
+50%
+22%
+12%
+8%
VIN = 4.5 V
VDEN = 4.5 V
See Figure 21
TJ = -40°C; 150°C
P_7.5.8
P_7.5.9
P_7.5.10
P_7.5.11
P_7.5.12
Current sense ratio
IL1 = 0.5 A
Current sense ratio
IL2 = 1 A
Current sense ratio
IL3 = 2 A
-8%
-7%
1730
1730
Current sense ratio
+7%
IL4 = 4 A
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Diagnostic Functions
Table 10 Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
0
Unit Note or Test Condition Number
Min.
Max.
1)
kILIS derating with current ΔkILIS
and temperature
-5
+5
%
%
k
versus kILIS2
P_7.5.17
P_7.5.37
ILIS3
See Figure 22
1)
kILIS derating with current ΔkILIS
and temperature
-8
-
0
+8
90
k
versus kILIS1
ILIS2
(kILIS2 -kILIS1
)
Diagnostic Timing in Normal Condition
2)3)
Current sense settling to
90% of IIS static after
positive input slope on
both INput and DEN
tsIS(ON)
-
µs
µs
µs
VDEN = VIN = 0 to 4.5 V P_7.5.18
VS = 28 V
RIS = 1.8 kΩ
CSENSE < 100 pF
RL = 25 Ω
See Figure 23
Current sense settling time tsIS(ON_DEN)
with load current stable
and transition of the DEN
-
-
-
-
10
20
VIN = 4.5 V
P_7.5.19
P_7.5.20
V
DEN = 0 to 4.5 V
RIS = 1.8 kΩ
SENSE < 100 pF
C
IL = IL3 = 2 A
See Figure 23
1)
Current sense settling time tsIS(LC)
to IIS stable after positive
input slope on current load
V = 4.5 V
IN
VDEN = 4.5 V
RIS = 1.8 kΩ
C
SENSE < 100 pF
IL = IL3 = 2 A to IL = IL4 = 4 A
See Figure 23
Diagnostic Timing in Open Load Condition
Current sense settling time tsIS(FAULT_OL_
-
-
90
µs
µs
VIN = 0 V
P_7.5.22
P_7.5.23
for open load detection in
VDEN = 0 to 4.5 V
RIS = 1.8 kΩ
CSENSE < 100 pF
OFF)
OFF state
V
1)
OUT = VS = 28 V
Current sense settling time tsIS(FAULT_OL_
-
200
350
V = 4.5 to 0V
IN
for open load detection in
VDEN = 4.5 V
ON_OFF)
ON-OFF transition
RIS = 1.8 kΩ
CSENSE < 100 pF
V
OUT = VS = 28 V
See Figure 26
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Diagnostic Functions
Table 10 Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or Test Condition Number
Min.
Diagnostic Timing in Overload Condition
Max.
2)3)
Current sense settling time tsIS(FAULT)
-
-
90
µs
V =VDEN= 0 to 4.5 V P_7.5.24
IN
for overload detection
VS =13.5 V
RIS = 1.8 kΩ
C
SENSE< 100 pF
VDS = 10 V
See Figure 19
1)
Current sense over current tsIS(OC_blank)
blanking time
-
-
350
-
µs
µs
V
= VDEN = 4.5 V
P_7.5.32
P_7.5.25
IN
RIS = 1.8 kΩ
SENSE < 100 pF
C
VDS= 5 V to 0 V
See Figure 19
1)
Diagnostic disable time
DEN transition to
IIS < 50% IL / kILIS
tsIS(OFF)
-
20
V = 4.5 V
IN
V
DEN = 4.5 V to 0 V
RIS = 1.8 kΩ
CSENSE < 100 pF
IL = IL3 = 2 A
See Figure 23
1) Not subject to production test, specified by design
2) Test at TJ = -40°C only
3) Production test for functionality within parameter limits
Datasheet
33
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to
voltage thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin
is slowly increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state.
The input circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input
circuitry. In case the pin is not needed, it must be left opened, or must be connected to device ground (and not
module ground) via an 10 kΩ input resistor.
IN
Input circuitry.emf
GND
Figure 28 Input Pin Circuitry
8.2
DEN Pin
The DEN pin enable and disable the diagnostic functionality of the device. The pins have the same structure
as the INput pins, please refer to Figure 28.
8.3
Input Pin Voltage
The IN and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set
by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and
depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.
Datasheet
34
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Input Pins
8.4
Electrical Characteristics
Table 11 Electrical Characteristics: Input Pins
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25°C
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
INput Pins Characteristics
Low level input voltage
range
VIN(L)
VIN(H)
-0.3
2
-
-
0.8
6
V
V
P_8.4.1
P_8.4.2
High level input voltage
range
1)
Input voltage hysteresis
Low level input current
High level input current
DEN Pin
VIN(HYS)
IIN(L)
-
250
10
-
mV
µA
µA
P_8.4.3
P_8.4.4
P_8.4.5
1
2
25
25
VIN = 0.8 V
VIN = 5.5 V
IIN(H)
10
Low level input voltage
range
VDEN(L)
VDEN(H)
-0.3
2
-
-
0.8
6
V
V
-
P_8.4.6
P_8.4.7
High level input voltage
range
-
1)
Input voltage hysteresis
Low level input current
High level input current
VDEN(HYS)
IDEN(L)
-
250
10
-
mV
µA
µA
P_8.4.8
P_8.4.9
P_8.4.10
1
25
25
VDEN = 0.8 V
VDEN = 5.5 V
IDEN(H)
2
10
1) Not subject to production test, specified by design
Datasheet
35
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Application Information
9
Application Information
Note:
The following information is given as a hint for the implementation of the device only and shall not
be regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
Voltage Regulator
T1
OUT
VS
GND
DZ
CVDD
CVS
VS
VDD
GPIO
GPIO
RDEN
DEN
IN0
RIN
OUT0
IN1
IS0
GPIO
RIN
COUT
Valve
ADC IN
RSENSE
Micro-
controller
CSENSE
OUT1
COUT
IS1
RSENSE
ADC IN
GND
GND
Bulb
CSENSE
D
Page-1.emf
Figure 29 Application Diagram with BTF6070-2ERV
Note:
This is a very simplified example of an application circuit. The function must be verified in the real
application.
Table 12 Bill of Material
Reference Value
Purpose
RIN
10 kΩ
Protection of the microcontroller during overvoltage, reverse polarity
Guarantee BTF6070-2ERV channels OFF during loss of ground
RDEN
RPD
10 kΩ
47 kΩ
Protection of the microcontroller during overvoltage, reverse polarity
Polarization of the output for short circuit to VS detection
Improve BTF6070-2ERV immunity to electromagnetic noise
ROL
1.5 kΩ
Ensures polarization of the BTF6070-2ERV output during open load in OFF
diagnostic
Datasheet
36
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Application Information
Table 12 Bill of Material (cont’d)
Reference Value
Purpose
RIS
1.8 kΩ
4.7 kΩ
Sense resistor
RSENSE
Overvoltage, reverse polarity, loss of ground. Value to be tuned with
microcontroller specification.
CSENSE
COUT
T1
100 pF
Sense signal filtering.
10 nF
Protection of the device during ESD and BCI
Switch the battery voltage for open load in OFF diagnostic
Protection of the BTF6070-2ERV during overvoltage
Protection of the BTF6070-2ERV during reverse polarity
Protection of the device during overvoltage
Filtering of voltage spikes at the battery line
Dual NPN/PNP
27 Ω
RGND
D
BAS21
Z
58 V Zener diode
100 nF
CVS
9.1
Further Application Information
•
•
•
Please contact us to get the pin FMEA
Existing App. Notes
For further information you may visit www.infineon.com
Datasheet
37
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Package Outlines
10
Package Outlines
1)
3.9 0.1
1)
8.65 0.1
14x
SEATING COPLANARITY
PLANE
0.67 0.25
6 0.2
2)
0.4 0.05
14x
BOTTOM VIEW
14
8
8
7
14
1
7
1
INDEX
MARKING
6.4 0.1
1.27
All dimensions are in units mm
The drawing is in compliance with ISO 128-30, Projection Method 1[
]
1)
2)
Does not Include plastic or metal protrusion of 0.15 max. per side
Dambar protrusion shall be maximum 0.1mm total in excess of width lead width
Figure 30 PG-TDSO-141) (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant
with government regulations the device is available as a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Legal Disclaimer for Short-Circuit Capability
Infineon disclaims any warranties and liablilities, whether expressed or implied, for any short-circuit failures
below the threshold limit.
Further information on packages
https://www.infineon.com/packages
1) Dimensions in mm
Datasheet
38
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Revision History
11
Revision History
Version
Date
Changes
Rev. 1.00 2019-04-25
Creation of the document
Datasheet
39
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
Table of Contents
1
2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1
3.2
3.3
4
4.1
4.2
4.3
4.3.1
4.3.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PCB Set-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
6
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
7
7.1
7.2
7.3
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
IS Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . . . 26
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SENSE Signal with OUT in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Electrical Characteristics Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
8
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Datasheet
40
Rev. 1.00
2019-04-25
PROFET™+ 24V
BTF6070-2ERV
8.1
8.2
8.3
8.4
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
DEN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
9
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
9.1
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
10
11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Datasheet
41
Rev. 1.00
2019-04-25
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2019-04-25
Published by
Infineon Technologies AG
81726 Munich, Germany
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
Infineon Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
© 2019 Infineon Technologies AG.
All Rights Reserved.
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aspect of this document?
Email: erratum@infineon.com
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Infineon Technologies’ products may not be used in
any applications where a failure of the product or any
consequences of the use thereof can reasonably be
expected to result in personal injury.
Document reference
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