BSZ900N15NS3 G [INFINEON]
与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。;
| 型号： | BSZ900N15NS3 G |
| 厂家： | 
Infineon |
| 描述： | 与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。 |
| 文件： | 总9页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ900N15NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Package
V DS
150
90
V
Marking
R DS(on),max
I D
mΩ
A
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
13
PG-TSDSON-8
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSZ900N15NS3 G
PG-TSDSON-8
900N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
13
A
T C=100 °C
8
52
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
I D=10 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
30
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
38
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
1)J-STD20 and JESD22
Rev. 2.1
page 1
2011-05-16
BSZ900N15NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
R thJA
Thermal resistance, junction - case
-
-
-
-
3.3
60
K/W
Thermal resistance,
junction - ambient
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
150
2
-
-
V
V GS(th)
V DS=V GS, I D=20 µA
3
4
V DS=120 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.01
10
1
µA
V
DS=120 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=10 A
GS=8 V, I D=5 A
Drain-source on-state resistance
74
75
90
91
-
mΩ
V
R G
g fs
Gate resistance
-
1.7
12
Ω
|V DS|>2|I D|R DS(on)max
I D=10 A
,
Transconductance
6
-
S
3) see figure 3
Rev. 2.1
page 2
2011-05-16
BSZ900N15NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
380
46
3
510 pF
V GS=0 V, V DS=75 V,
f =1 MHz
C oss
C rss
t d(on)
t r
61
-
4
-
-
-
-
ns
4
V
DD=75 V, V GS=10 V,
I D=5 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
8
3
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
1.9
0.9
1.7
5.0
5.2
12
-
-
nC
Q gd
V DD=75 V, I D=5 A,
GS=0 to 10 V
Q sw
Q g
-
V
Gate charge total
7
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=75 V, V GS=0 V
17
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
13
52
A
T C=25 °C
I S,pulse
V GS=0 V, I F=13 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
V
t rr
Reverse recovery time
-
-
59
ns
V R=75 V, I F=5 A ,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
123
-
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2011-05-16
BSZ900N15NS3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
40
35
30
25
20
15
10
5
15
10
5
0
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
102
101
100
10-1
101
1 µs
10 µs
100 µs
0.5
1 ms
100
0.2
0.1
DC
0.05
0.02
0.01
single pulse
10-1
10-1
100
101
102
103
V DS [V]
t p [s]
Rev. 2.1
page 4
2011-05-16
BSZ900N15NS3 G
6 Typ. drain-source on resistance
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
25
20
15
10
5
150
140
5 V
5.5 V
130
10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
6 V
7 V
8 V
10 V
6 V
5.5 V
5 V
4.5 V
0
0
1
2
3
0
4
8
12
16
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
28
24
20
16
12
8
20
15
10
5
4
150 °C
25 °C
0
0
0
2
4
6
8
0
10
20
30
V GS [V]
ID [A]
Rev. 2.1
page 5
2011-05-16
BSZ900N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R
DS(on)=f(T j); I D=10 A; V GS=10 V
200
180
160
140
4
3.5
200 µA
3
2.5
2
20 µA
120
98 %
100
typ
80
1.5
1
60
40
20
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
103
100
Ciss
102
25 °C
150 °C, 98%
Coss
150 °C
10
101
25 °C, 98%
Crss
100
1
0
0
20
40
60
80
100
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 2.1
page 6
2011-05-16
BSZ900N15NS3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=5 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
120 V
8
6
4
2
75 V
30 V
10
25 °C
100 °C
125 °C
1
1
0
0
10
100
1000
2
4
6
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
170
165
160
155
150
145
140
135
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.1
page 7
2011-05-16
BSZ900N15NS3 G
Package Outline: PG-TSDSON-8
Rev. 2.1
page 8
2011-05-16
BSZ900N15NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
Rev. 2.1
page 9
2011-05-16
相关型号：
BSZ900N15NS3GXT
Power Field-Effect Transistor, 13A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ900N20NS3 G
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
INFINEON
BSZ900N20NS3GATMA1
Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
©2020 ICPDF网 联系我们和版权申明