BSZ215C H [INFINEON]
互补式功率 MOSFET - 在同一封装内的 n 通道和 p 通道功率 MOSFET - 是英飞凌有名的低电压 OptiMOS™ 系列的组成部分，OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和电信）以及功耗（例如电动车）领域。;
| 型号： | BSZ215C H |
| 厂家： | 
Infineon |
| 描述： | 互补式功率 MOSFET - 在同一封装内的 n 通道和 p 通道功率 MOSFET - 是英飞凌有名的低电压 OptiMOS™ 系列的组成部分，OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和电信）以及功耗（例如电动车）领域。 服务器 电信 |
| 文件： | 总13页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ215C H
OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Product Summary
Features
P
N
· Complementary P + N channel
VDS
-20
150
310
-3.2
20
55
95
5.1
V
· Enhancement mode
· Super Logic level (2.5V rated)
· Common drain
RDS(on),max
VGS=±4.5 V
VGS=±2.5 V
mW
ID
A
· Avalanche rated
· 175 °C operating temperature
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
· Halogen-free according to IEC61246-21
Type
Package
Marking
215C
Lead Free
Yes
Halogen Free
Yes
Packing
Non dry
PG-TSDSON-8 LTI
BSZ215C H
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Value
Parameter
Symbol Conditions
Unit
P
N
I D
T A=25 °C
T A=100 °C
T A=25 °C
Continuous drain current
-3.2
-2.2
-13
5.1
A
3.6
20
I D,pulse
Pulsed drain current
P: I D=-3.2 A,
N: I D=5.1 A,
R GS=25 W
EAS
Avalanche energy, single pulse
11
11
mJ
VGS
12
Gate source voltage
Power dissipation
V
2)
T A=25 °C
2.5
W
Ptot
T j, T stg
-55 ... 175
Operating and storage temperature
°C
0 (<250V)
260
ESD class
JESD22-A114-HBM
T solder
Soldering temperature
IEC climatic category; DIN IEC 68-1
°C
55/175/56
1) Remark: only one of both transistors active
Rev 2.03
page 1
2016-10-04
BSZ215C H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
P
N
Thermal resistance, junction -
case
R thJC
-
-
-
-
8
K/W
K/W
6 cm2 cooling area2)
R thJA
Device on PCB
60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D=-250 µA
VGS=0 V, I D=250 µA
Drain-source breakdown voltage
P
N
P
N
-
-
-
-20
-
V
20
VGS(th) VDS=VGS, I D=-110 µA
VDS=VGS, I D=110 µA
Gate threshold voltage
-1.4
0.8
-1.0
1.1
-0.7
1.4
VDS=-20 V, VGS=0 V,
I DSS
Zero gate voltage drain current
P
-
-
-0.1 µA
T j=25 °C
VDS=20 V, VGS=0 V,
T j=25 °C
N
P
N
-
-
-
-
-
-
-
-
0.1
VDS=-20 V, VGS=0 V,
T j=175 °C
-50
VDS=20 V, VGS=0 V,
T j=175 °C
50
Gate-source leakage current
P
N
I GSS
VGS= 12 V, VDS=0 V
100 nA
VGS=-2.5 V,
I D=2.1 A
R DS(on)
P
N
P
N
P
-
-
144
63
310
95
150
55
-
mW
Drain-source on-state
resistance
VGS=2.5 V, I D=1.9 A
VGS=-4.5 V, I D=-3.2 A
VGS=4.5 V, I D=5.1 A
-
95
-
41
|VDS|>2|I D|R DS(on)max
I D=-2.2 A
,
g fs
Transconductance
4
7.9
S
|VDS|>2|I D|R DS(on)max
I D=3.6 A
,
N
5.5
11
-
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 2.03
page 2
2016-10-04
BSZ215C H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
P
N
P
N
P
N
P
N
P
N
P
N
P
N
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
315
92
400 pF
419
VGS=0 V,
C oss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
120
P: VDS=-10 V,
N: VDS= 10 V,
114
92
152
f =1 MHz
Crss
140
16
24
t d(on)
7.4
4.9
3.7
2.0
11.3
12.2
4.7
1.4
-
-
-
-
-
-
-
-
ns
P: VDD=-10 V,
t r
VGS=-4.5 V, R G=6 W,
I D=-3.2 A
t d(off)
Turn-off delay time
Fall time
N: VDD=10 V,
VGS=4.5 V, R G=6 W,
I D=5.1 A
t f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Q gs
P
-
-
-
-
-
-
-0.58
-1.3
-3.0
-1.9
0.7
-0.8 nC
VDD=-10 V,
I D=-3.2 A,
Q gd
-1.7
-4.6
-
Q g
VGS=0 to -4.5 V
Vplateau
Q gs
Gate plateau voltage
Gate to source charge
Gate to drain charge
Switching charge
N
1.0
-
VDD=10 V,
I D=5.1 A,
Q gd
0.4
Q g
2.1
2.8
VGS=0 to 4.5 V
Vplateau
Gate plateau voltage
2.3
Rev 2.03
page 3
2016-10-04
BSZ215C H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
Diode continuous forward current
I S
P
N
P
N
-
-
-
-
-2.1
2.3
-13
20
A
T C=25 °C
I S,pulse
Diode pulse current
VGS=0 V, I F=3.2 A,
VSD
Diode forward voltage
P
N
-
-
-0.98
0.9
-1.2
1.2
V
T j=25 °C
VGS=0 V, I F=5.1 A,
T j=25 °C
t rr
Reverse recovery time
P
N
P
N
12.2
10.9
4.6
ns
-
-
-
-
VR= 10 V, I F=I S,
diF/dt =100 A/µs
Q rr
Reverse recovery charge
nC
3.4
Rev 2.03
page 4
2016-10-04
BSZ215C H
1 Power dissipation (P)
2 Power dissipation (N)
Ptot=f(T A)
Ptot=f(T A)
3
2.5
2
3
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
3 Drain current (P)
I D=f(T A)
4 Drain current (N)
I D=f(T A)
parameter: VGS≤-4.5 V
parameter: VGS≥4.5 V
3.5
5.5
5
3
4.5
4
2.5
2
3.5
3
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
Rev 2.03
page 5
2016-10-04
BSZ215C H
5 Safe operating area (P)
I D=f(VDS); T A=25 °C; D =0
parameter: t p
6 Safe operating area (N)
I D=f(VDS); T A=25 °C; D =0
parameter: t p
102
101
100
10-1
1 µs
1 µs
10 µs
101
10 µs
100 µs
100 µs
1 ms
1 ms
10 ms
10 ms
100
DC
DC
10-1
10-2
10-1
10-2
101
102
10-1
100
101
102
-VDS [V]
VDS [V]
7 Max. transient thermal impedance (P)
Z thJA=f(t p)
8 Max. transient thermal impedance (N)
Z thJA=f(t p)
parameter: D =t p/T
parameter: D =t p/T
102
102
0.5
0.2
0.5
0.2
101
101
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
single pulse
single pulse
100
100
10-5
10-4
10-3
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
tp [s]
Rev 2.03
page 6
2016-10-04
BSZ215C H
9 Typ. output characteristics (P)
I D=f(VDS); T j=25 °C
10 Typ. output characteristics (N)
I D=f(VDS); T j=25 °C
parameter: VGS
parameter: VGS
20
20
4.5 V
10 V
10 V
4.5 V
18
18
16
14
12
10
8
3.5 V
3 V
16
14
12
10
8
3.3 V
3 V
2.5 V
2.5 V
2.3 V
2.3 V
6
6
2 V
4
4
1.8 V
2
2
2 V
1.8 V
0
0
0
1
2
3
0
1
2
3
VDS [V]
VDS [V]
11 Typ. drain-source on resistance (P)
R DS(on)=f(I D); T j=25 °C
12 Typ. drain-source on resistance (N)
R DS(on)=f(I D); T j=25 °C
parameter: VGS
parameter: VGS
280
120
240
100
1.8 V
2.2 V
200
80
2 V
2.2 V
2.5 V
160
2.5 V
60
40
20
0
3 V
3.3 V
4.5 V
3 V
120
3.5 V
4.5 V
6 V
6 V
80
40
0
0
2
4
6
8
0
2
4
6
8
ID [A]
ID [A]
Rev 2.03
page 7
2016-10-04
BSZ215C H
13 Typ. transfer characteristics (P)
I D=f(VGS); |VDS |>2 | ID| RDS(on)max
parameter: T j
14 Typ. transfer characteristics (N)
I D=f(VGS); |VDS |>2 | I D | R DS(on)max
parameter: T j
6
5
4
3
2
6
5
4
3
2
175 °C
175 °C
1
1
25 °C
25 °C
0
0
0
1
2
3
0
1
2
3
-VGS [V]
VGS [V]
15 Drain-source on-state resistance (P)
16 Drain-source on-state resistance (N)
R DS(on)=f(T j); I D=-3.2 A; VGS=-4.5 V
R DS(on)=f(T j); I D=5.1A; VGS=4.5 V
240
200
100
90
80
70
max
160
max
60
120
50
typ
typ
40
30
20
10
0
80
40
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
Rev 2.03
page 8
2016-10-04
BSZ215C H
17 Typ. gate threshold voltage (P)
18 Typ. gate threshold voltage (N)
VGS(th)=f(T j); VGS=VDS; I D=-110 µA
VGS(th)=f(T j); VGS=VDS; I D=110 µA
1.6
1.6
max
max
1.2
1.2
typ
typ
min
0.8
0.8
min
0.4
0.4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
19 Typ. capacitances (P)
20 Typ. capacitances (N)
C =f(VDS); VGS=0 V; f =1 MHz
C =f(VDS); VGS=0 V; f =1 MHz
103
103
Ciss
Ciss
Coss
102
101
100
Coss
102
Crss
Crss
101
0
10
-VDS [V]
20
0
5
10
VDS [V]
15
20
Rev 2.03
page 9
2016-10-04
BSZ215C H
21 Forward characteristics of reverse diode (P)
I F=f(VSD
22 Forward characteristics of reverse diode (N)
)
I F=f(VSD)
parameter: T j
parameter: T j
101
101
25 °C
175 °C
175 °C
25 °C
100
100
max, 175°C
10-1
10-1
175 °C, max
max, 25 °C
25 °C, max
10-2
0
10-2
0
0.5
1
1.5
2
0.4
0.8
VSD [V]
1.2
1.6
-VSD [V]
23 Avalanche characteristics (P)
24 Avalanche characteristics (N)
I AS=f(t AV); R GS=25 W
parameter: T j(start)
I AS=f(t AV); R GS=25 W
parameter: T j(start)
101
101
25 °C
100 °C
25 °C
100 °C
150 °C
150 °C
100
100
10-1
10-1
100
101
102
103
100
101
102
103
tAV [µs]
tAV [µs]
Rev 2.03
page 10
2016-10-04
BSZ215C H
25 Typ. gate charge (P)
VGS=f(Q gate); I D=-3.2A pulsed
parameter: VDD
26 Typ. gate charge (N)
VGS=f(Q gate); I D=5.1A pulsed
parameter: VDD
6
6
5
4
3
2
1
0
5
-16 V
-4 V
10 V
4 V
-10 V
4
3
2
1
0
16 V
0
1
2
3
4
5
0
0.5
1
1.5
Qgate [nC]
2
2.5
3
-Qgate [nC]
27 Drain-source breakdown voltage (P)
28 Drain-source breakdown voltage (N)
VBR(DSS)=f(T j); I D=-250 µA
VBR(DSS)=f(T j); I D=250 µA
25
24
23
22
21
20
19
18
17
16
25
24
23
22
21
20
19
18
17
16
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
Rev 2.03
page 11
2016-10-04
BSZ215C H
Package Outline
PG-TSDSON-8LTI
PG-TSDSON-8LTI : Outline
Dimensions in mm
Rev 2.03
page 12
2016-10-04
20VꢀOptiMOSªꢀ2ꢀSmallꢀSignalꢀTransistor
BSZ215CꢀH
RevisionꢀHistory
BSZ215C H
Revision:ꢀ2016-10-06,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
2.3
Subjects (major changes since last revision)
Update package drawing
2016-10-06
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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13
Rev.ꢀ2.3,ꢀꢀ2016-10-06
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INFINEON
BSZ240N12NS3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
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BSZ240N12NS3GATMA1
Power Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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BSZ340N08NS3GATMA1
Power Field-Effect Transistor, 6A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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BSZ42DN25NS3 G
英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
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BSZ440N10NS3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
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